Interaction of highly charged ions with carbon-based materials using Kobe EBIS

Interaction of highly charged ions (HCIs) with surfaces produce various specific phenomena as a consequence of the potential energy that HCI possesses. In the present study, we have observed photon emission, structural, magnetic, and electronic modification on various carbon-based materials such as carbon nanotube by the impact of HCIs using an electron beam ion source named Kobe EBIS installed at the Kobe University. In order to study the potential effect, HCIs of Ar^q+ (q = 6–16) with the intensity of 0.1–1 nA are projected on the surface with a constant kinetic energy (16 keV). For photon emission measurements, we observed spatial and spectral distribution of visible light emission from the surface during irradiation with HCIs. On the other hand, the structural modification of multi-walled carbon nanotubes (MWCNTs) irradiated with HCIs has been analyzed using a transmission electron microscopy and Raman spectroscopy. Irradiation effects on the resistivity of single MWCNT supported on micrometer scale bridge pattern were also measured. We have also measured magnetic structure of highly oriented pyrolytic graphite irradiated with HCIs using electron spin resonance at low temperature. At the present paper, we will review our recent experimental results on the interaction of HCI with various carbon-based materials.     

Dissociative ionization of the H2O molecule bombarded by swift singly charged and slow highly charged ions

Fragment ion energy spectra of the water molecule have been measured in conventional crossed-beam experiments by the impact of 46 keV/u energy, singly charged ions (SCIs) and 4.3 keV/u energy, highly charged ions (HCIs). Double differential cross sections have been determined and a comparative analysis has been performed. We found that the fragmentation spectra for SCIs and HCIs are very similar, indicating that both collisions lead to the same fragmentation channels. This suggests that the Coulomb explosion of the water molecule is dominantly determined by the charge state of the transient molecular ions, and it is almost independent from the primary ionization mechanism. Differences were observed not only between the SCI and HCI impact-induced fragmentation cross sections, but between those obtained by the 60 keV N⁶⁺ and 70 keV O⁷⁺ projectiles. The differences were attributed to the selectivity of the electron capture process for HCIs. Multiple target ionization cross sections have been deduced from the fragment ion spectra. We found contributions of up to fivefold ionization for SCIs and up to sixfold ionization for HCIs.     

Neutralization of multiply charged ions at a surface

We report on emission processes induced by particle-solid interaction involving ions with a large potential (i.e., high ion charge state) and low kinetic energy. After an introduction into existing neutralization models for ion scattering at a metal surface a detailed discussion on the electron emission processes is presented.The number of electrons emitted per incident ion is shown to be proportional to the potential energy only within a restricted parameter field involving charge state and ion velocity. The kinetic energy distribution of emitted electrons is dominated by low-energetic electrons (30 eV), while inner shell holes of the projectile ion can initiate high-energetic characteristic Auger electrons. The presence of inner shell holes is also of importance for the charge state of highly charged ions being scattered at surfaces whereas normally the charge state distribution of scattered ions depends on the impact parameter only.The influence of the primary ion charge state on the sputtering yield of insulating surfaces is seen for the charge state of sputtered particles, whereas the total sputtering yield seems to be insensitive. This question is still subject to controversy, however.Photon emission dependent on the charge state of the impinging ion has been observed up to now only for extremely highly charged ions as hydrogenlike Ar or Kr.     

Simulating the stopping dynamics of highly charged ions in an ultra-cold, strongly coupled plasma

We introduce a method for stopping highly charged ions (HCIs) in a laser-cooled one-component plasma (OCP) of ²⁴Mg⁺ ions and present results on stopping times derived from realistic molecular dynamics simulations of the complete stopping process. This stopping scheme can provide ultra-cold highly charged ions for future in-trap precision mass measurements. The choice of an ultra-cold ion plasma as a stopping medium is governed by the almost negligible charge exchange of the HCI with the laser-cooled ions and the very low temperatures which can be reached. In our analysis we focus on the stability and fast recooling of the plasma – two features essential for the experimental realization of this stopping scheme.      

高电荷态离子与SiO2表面相互作用的研究

高电荷态离子(Pbq ,Arq )由兰州近代物理研究所的ECR实验平台所产生,轰击非晶态SiO2表面.用微通道板测量溅射粒子产额的角分布.用公式拟合实验溅射角分布得到了较好的结果,并给出了初步的理论解释.由此得出了高电荷态离子与SiO2表面作用的微分溅射截面.实验结果表明高电荷态离子能够增加动能溅射;同时高电荷态离子入射能够引起势能溅射.在大角度入射时,溅射产额主要是由碰撞引起的;在小角入射时势能溅射所占比重会增大.     

高电荷态离子轰击Au固体表面激发的特征光谱线

报道了高电荷态离子129X6+e和129X30+e轰击金属Au表面激发的200～1000 nm波段光谱的实验结果.实验结果表明：高电荷态离子所激发的靶原子的谱线强度与入射离子的电荷态密切相关,与入射离子的初动能没有强的相关性.     

Single ion induced surface nanostructures: a comparison between slow highly charged and swift heavy ions

This topical review focuses on recent advances in the understanding of the formation of surface nanostructures, an intriguing phenomenon in ion-surface interaction due to the impact of individual ions. In many solid targets, swift heavy ions produce narrow cylindrical tracks accompanied by the formation of a surface nanostructure. More recently, a similar nanometric surface effect has been revealed for the impact of individual, very slow but highly charged ions. While swift ions transfer their large kinetic energy to the target via ionization and electronic excitation processes (electronic stopping), slow highly charged ions produce surface structures due to potential energy deposited at the top surface layers. Despite the differences in primary excitation, the similarity between the nanostructures is striking and strongly points to a common mechanism related to the energy transfer from the electronic to the lattice system of the target. A comparison of surface structures induced by swift heavy ions and slow highly charged ions provides a valuable insight to better understand the formation mechanisms.     

Defect mediated desorption of the KBr(001) surface induced by single highly charged ion impact

The individual impacts of slow (300 eV/amu) highly charged Xe ions induce nanometer sized pitlike structures on the KBr (001) surface. The volume of these structures shows a strong dependence on the ions potential energy. Total potential sputter yields from atomically flat (001) terraces are determined by imaging single ion impact sites. The dependence of the sputter yield on the ions initial charge state combined with structure formation at low and high-fluence irradiations indicates that agglomeration of defects into complex centers plays a major role in the desorption process induced by the potential energy.     

100-keV质子在聚碳酸酯微孔膜中传输的动态演化过程

本工作测量了100 keV质子穿过倾角为+1°的聚碳酸酯(PC)纳米微孔膜后, 出射粒子电荷态、位置的分布以及相对穿透率随时间的演化. 实验发现, 100 keV(E/q约为100 kV)质子穿过绝缘纳米微孔的物理机理与keV能区的导向过程有根本的不同. 在实验测量初期, 微孔内部无电荷沉积, 质子主要通过在微孔内表面以下的多次随机二体碰撞过程为主要传输机理; 而当充放电平衡后, 微孔内部有明显的电荷斑, 主要传输机理为电荷斑辅助的表面以上(或近表面)的镜面散射行为. 这一物理图像使质子穿过微孔的物理认识更加深入和完整, 也将促进百千电子伏质子微束的应用.     

Creation of nanohillocks on CaF2 surfaces by single slow highly charged ions

Upon impact on a solid surface, the potential energy stored in slow highly charged ions is primarily deposited into the electronic system of the target. By decelerating the projectile ions to kinetic energies as low as 150 x q eV, we find first unambiguous experimental evidence that potential energy alone is sufficient to cause permanent nanosized hillocks on the (111) surface of a CaF(2) single crystal. Our investigations reveal a surprisingly sharp and well-defined threshold of potential energy for hillock formation which can be linked to a solid-liquid phase transition.     

126Xeq+轰击Al表面产生的原子和离子光谱线

报道了高电荷态离子^126Xe^q (6≤q≤30)入射到固体Al表面产生的200～1000nm波段的发射光谱的实验结果。实验表明,在弱束流(nA量级)高电荷态的情况下,通过入射离子与固体靶的相互作用可有效地产生原子和离子的复杂组态间跃迁所形成的可见光波段的特征谱线,而且当入射离子的电荷剥离数超过一临界值后(对Al,q=26),谱线相对强度突然显著增强。根据经典过垒模型COB(The classic over-barrier model),在入射离子的动能较小(～1keV／u)的条件下．高电荷态离子与表面相互作用过程中电子的俘获或转移起着非常重要的作用,通过提高入射离子的电荷态可增强入射离子俘获电子的能力．显著增强激发粒子的光谱线的强度。     

低速高电荷态重离子辐照的GaN晶体表面X射线光电子能谱研究

利用低速高电荷态Xeq+和Pbq+离子对在蓝宝石衬底上生长的GaN晶体膜样品进行辐照,并利用X射线光电子能谱(XPS)对样品表面化学组成和元素化合态进行了分析.结果表明,高电荷态离子对样品表面有显著的刻蚀作用;经高电荷态离子辐照的GaN样品表面氮元素贫乏而镓元素富集;随着入射离子剂量和所携带电荷数的增大,Ga—Ga键相对含量增大;辐照后,GaN样品中Ga—Ga键对应的Ga3d5/2电子的束缚能偏小,晶格损伤使内层轨道电子束缚能向低端方向偏移.     

Cold highly charged ions in a cryogenic Paul trap

Narrow optical transitions in highly charged ions (HCIs) are of particular interest for metrology and fundamental physics, exploiting the high sensitivity of HCIs to new physics. The highest sensitivity for a changing fine structure constant ever predicted for a stable atomic system is found in Ir^17?+?. However, laser spectroscopy of HCIs is hindered by the large (～ 10⁶ K) temperatures at which they are produced and trapped. An unprecedented improvement in such laser spectroscopy can be obtained when HCIs are cooled down to the mK range in a linear Paul trap. We have developed a cryogenic linear Paul trap in which HCIs will be sympathetically cooled by ⁹Be^?+? ions. Optimized optical access for laser light is provided while maintaining excellent UHV conditions. The Paul trap will be connected to an electron beam ion trap (EBIT) which is able to produce a wide range of HCIs. This EBIT will also provide the first experimental input needed for the determination of the transition energies in Ir^17?+?, enabling further laser-spectroscopic investigations of this promising HCI.     

Charge driven fragmentation of nucleobases

We studied multiple ionization of single nucleobases by means of slow highly charged ions (Xe(q+), q=5-25). The products of the subsequent fragmentation were studied using high resolution coincidence time-of-flight spectrometry. We observed a strong dependence of the fragment kinetic energies on the initial charge state of the intermediate parent ions as well as on the initial chemical environment of the respective fragment ions within the parent molecule. The data allow us to shed light on the charge distribution within the molecule as well as on the fragmentation dynamics of these intermediate size systems.     

低速高电荷态重离子在C_(60)薄膜中引起的势效应研究

为了研究低速高电荷态离子在C60薄膜中引起的势效应,用能量为200keV的高电荷态Xen+(n=3,10,13,15,17,20,22,23)离子辐照了C60薄膜。用原子力显微镜(AFM)和Raman散射技术分析了辐照过程中高电荷态Xen+离子所储存势能在C60薄膜中引起的效应,即势效应。AFM分析结果表明,辐照C60薄膜的表面粗糙度随辐照Xen+离子电荷态(即势能)的增加而减小,揭示了势效应的存在。而Raman分析结果表明,由于Xe离子的动能远大于其所储存的势能,因此,尽管有表面势效应的影响,但在Raman分析的深度范围内,弹性碰撞还是主导了C60薄膜的损伤过程。     

用于高电荷态离子与表面相互作用研究的原子物理实验平台

在重离子加速器国家实验室ECR离子源上,成功组建了用于高电荷态离子与表面相互作用研究的原子物理实验平台;利用该实验平台,研究了用不同电荷态和不同速度的高电荷态离子与不同表面相互作用的可见光和X射线发射的情况,同时还研究了高电荷态Xe离子轰击晶体材料所引起的材料性质和表面结构变化的情况.     

高电荷态离子与Si(110)晶面碰撞的沟道效应研究

不同电荷态低速离子(Ar^q+,Pb^q+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额. 通过比较溅射产额与入射角的关系,证实沟道效应的存在. 高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的. 在小角入射条件下,高电荷态离子能够增大溅射产额. 当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应. 关键词： 高电荷态离子 溅射 沟道效应     

Surface Erosion of GaN Bombarded by Highly Charged 208Pbq+-Ions

Surface change of gallium nitride specimens after bombardment by highly charged Pbq^＋-ions （q = 25, 35） at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq^＋-ions and the ion dose. The erosion depth of the specimens in 60° incidence （tilted incidence） is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion （Ek = 360, 700 keV）. On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.     

Projectile charge and velocity effect on UO2 sputtering in the nuclear stopping regime

Angular distributions and yields of uranium sputtered by slow highly charged Xe^q+ ions (kinetic energy 1.5 keV ￡ E_k ￡ 811.5~{\rm keV}\le E_{k}\le 81  keV, charge state 1≤q≤25) from UO₂ were measured by means of the catcher technique. A charge state effect on the sputtering process is observed at 8 and 81 keV. A deviation from a Acosθ shape (the linear collision cascade theory) is observed in case of Xe^q+ impinging a UO₂ surface at E_k=8 keV. Yields increase linearly with projectile charge state q thus clearly revealing the contribution of potential energy to the sputtering process. In addition, as the kinetic energy of a Xe¹⁰⁺ projectile decreases from 81 keV to 1.5 keV, a velocity effect is clearly observed on the angular distribution.     

Using GPU parallelization to perform realistic simulations of the LPCTrap experiments

We performed classical molecular dynamics (MD) simulations in order to search the conditions for efficient sympathetic cooling of highly charged ions (HCIs) in a linear Paul trap. Small two-component ion Coulomb crystals consisting of laser-cooled ions and HCIs were characterized by the results of the MD simulations. We found that the spatial distribution is determined by not only the charge-to-mass ratio but also the space charge effect. Moreover, the simulation results suggest that the temperature of HCIs do not necessarily decrease with increasing the number of laser-cooled ions in the cases of linear ion crystals. We also determined the cooling limit of sympathetically cooled ¹⁶⁵Ho¹⁴⁺ ions in small linear ion Coulomb crystals. The present results show that sub-milli-Kelvin temperatures of at least 10 Ho¹⁴⁺ ions will be achieved by sympathetic cooling with a single laser-cooled Be⁺.