Aligned Elongation of Ag Nanoparticles Embedded in Silica Irradiated with High Energy Ni Ions

Metallic nanoparticle(NP) shapes have a significant influence on the property of composite embedded with metallic NPs. Swift heavy ion irradiation is an effective way to modify shapes of metallic NPs embedded in an amorphous matrix. We investigate the shape deformation of AgNPs with irradiation fluence, and 357 MeV Ni ions are used to irradiate the silica containing AgNPs, which are prepared by ion implantation and vacuum annealing. The UV-vis results show that the surface plasmon resonance(SPR) peak from AgNPs shifts from 400 to 377 nm. The SPR peak has a significant shift at fluence lower than 1 × 10~(14) ions/cm2 and shows less shift at fluence higher than 1 × 10~(14) ions/cm~2. The TEM results reveal that the shapes of AgNPs also show significant deformation at fluence lower than 1 × 10~(14) ions/cm~2 and show less deformation at fluence higher than1 × 10~(14) ions/cm~2. The blue shift of the SPR peak is considered to be the consequence of defect production and AgNP shape deformation. Based on the thermal spike model calculation, the temperature of the silica surrounding Ag particles first increases rapidly, then the region of AgNPs close to the interface of Ag/silica is gradually heated. Therefore, the driven force of AgNPs deformation is considered as the volume expansion of the first heated silica layer surrounding AgNPs.     

Fe/Nb多层膜中离子辐照效应研究(英文)

〗采用磁控溅射技术在Si衬底上沉积Si/\[Fe(10 nm)/Nb(4 nm)/Fe(4 nm)/Nb(4 nm)\]2/ \[Fe(4 nm)/Nb(4 nm)\]4多层膜。 用2 MeV的 Xe离子在室温下辐照多层膜。采用俄歇深度剖析、X射线衍射和振动样品磁强计分析辐照引起的多层膜元素分布、 结构及磁性变化。AES深度剖析谱显示当辐照注量达到1.0×1014 ions/cm2时, 多层膜界面两侧元素开始混合; 当辐照注量达到2.0×1016ions/cm2时, 多层膜层状结构消失, Fe层与Nb层几乎完全混合。XRD谱显示, 当辐照注量达到1.0×1014ions/cm2时, Nb的衍射峰和Fe的各衍射峰的峰位相对于标准卡片向小角方向偏移, 这说明辐照引起Nb基和Fe基FeNb固溶体相的形成;当辐照注量大于1.0×1015 ions/cm2时, 辐照引起非晶相的出现。 VSM测试显示,多层膜的磁性随着结构的变化而变化。 在此实验基础上, 对离子辐照引起界面混合现象的机理进行了探讨。The behavior of the metallic multilayers of Si/\[Fe(10 nm)/Nb(4 nm)/Fe(4 nm)/ Nb(4 nm)\]2/\[Fe(4 nm)/Nb(4 nm)\]4 under 2 MeV Xe ion irradiation has been investigated by depth profile analysis of Auger electron spectroscopy,X ray diffraction and vibrating sample magnetometer. The obtained experimental results show that the inter mixing between Fe and Nb layers occurs in the 1.0×1014 ions/cm2 irradiated multilayer sample which results in the formation of Nb based and Fe based FeNb solid solution. For the samples irradiated to fluence larger than 1.0×1014 ions/cm2, amorphisation is observed, and moreover, the layered structure of the multilayer samples is broken up completely for the samples under 1.0×1016 or 2.0×1016 ions/cm2 irradiation. Vibrating sample magnetometer measurement also reveals that the magnetization of the samples changes with the evolution of the structure of multilayers. Possible mechanism of the modification in Fe/Nb multilayers induced by Xe ion irradiation is briefly discussed.     

Ellipticity-dependent ionization/dissociation of carbon dioxide in strong laser fields

Ionization and dissociation of linear triatomic molecules, carbon dioxide, are studied in 50-fs 800-nm strong laser fields using time-of-flight mass spectrometer. The yields of double charged ions CO2+2 and various fragment ions(CO+,O n+, and C n+(n = 1, 2)) are measured as a function of ellipticity of laser polarization in the intensity range from 5.0 ×1013W/cm2 to 6.0 × 1014W/cm2. The results demonstrate that non-sequential double ionization, which is induced by laser-driven electron recollision, dominates double ionization of CO2 in the strong IR laser field with intensity lower than2.0 × 1014W/cm2. The electron recollision could also have contribution in strong-field multiple ionization and formation of fragments of CO2 molecules. The present study indicates that the intensity and ellipticity dependence of ions yields can be used to probe the complex dynamics of strong-field ionization/dissociation of polyatomic molecules.     

A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109to 4×1010 cm-2and 1×109 to 2×1012 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×1010 and 2×1012 cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.     

Secondary Beam Fragments Produced by 200 and 400 MeV/u ^12C^6＋ Ions in Water

Based on the GEANT4 toolkit, we study the transportation of nucleons and nuclei in tissue-like media. The fragmentation of projectile nuclei and secondary interactions of produced nuclear fragments are considered. Livermore data is used to calculate electromagnetic interaction of primary and secondary charged particles. We validate the models using experimental data of 200 MeV/u and 400 MeV/u carbon ions, interacting with tissue equivalent materials of water. The model can well describe the depth-dose distributions in water and the doses measured for secondary fragments of certain charge and certain mass number. The secondary beam fragments produced by 200 MeV/u and 400 MeV/u ^12C^6＋ ions in water are investigated using the model. When the primary nuclei are in water, several neutron production mechanisms are involved. The light charged particles （p, d, t, ^3He and ^4He） and fast neutrons contribute to the dose tail behind the Bragg peak. The ^11C fragments which may be the most suitable nuclei for monitoring the energy deposition in carbon-ion therapy are also discussed.     

Irradiation effects of graphene and thin layer graphite induced by swift heavy ions

Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the "blue shift" of 2D bond and the "red shift" of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D' peak are detected at the fluence above a threshold Φth. The thinner the film, the lower the Φthis. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6 × 1012ions/cm2. For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak(HD/HD).     

Ionoluminescence Spectra of a ZnO Single Crystal Irradiated with 2.5 MeV H~+ Ions

The ionoluminescenee(IL) spectra of a ZnO single crystal irradiated with 2.5 MeVH~+ ions reveal that its intensity decreases with increasing the ion fluence, which indicates that the concentration of lumineseence centers decreases with irradiation. The Gaussian decomposition results of the ZnO IL spectrum with a fluence of1.77×10~(11) ions/cm~2 show that the spectrum is a superposition of energy levels centered at 1.75 eV, 2.10 eV, 3.12 eV and 3.20 eV. The four peaks are associated with electronic transitions from CB to V_(Zn), CB to O_i,Zn_i to VB and the decay of self-trapped excitons, respectively. The results of single-exponential fitting demonstrate that different luminescent centers have different radiation resistance, which may explain why the emission decreases more slowly in the NBE band than in the DBE band. The agglomeration of larger point clusters accounts for the decrease in the concentration of luminescence centers and the increase in the concentration of non-luminescence centers, which indicates that the defect clusters induced by ion implantation act as nonradiative recombination centers and suppress light emission. The results of the photoluminescence spectra of a virgin ZnO single crystal and a ZnO single crystal irradiated with a fluence of 3.4 x 1014 ions/cm~2 show that compared with the virgin ZnO,the emission intensity of irradiated ZnO decreases by nearly two orders of magnitude, which demonstrates that the irradiation effect reduces radiative recombination and enhances nonradiative recombination. The conclusions of photoluminescence are consistent with the IL results.     

6MeV/u 12C6+离子对四种作物种子的生物学效应研究

在中科院近代物理研究所兰州重离子研究装置(HIRFL)上,采用46.6MeV/u~(12)C~(6+)离子对四种不同作物种子进行了生物学效应研究,结果表明:重离子的轰击和贯穿,不仅会在种子表面外貌而且也对种子内部细胞造成严重损伤,重离子对种子萌发能力和生长发育均有明显的抑制作用,对生物功能也有影响;在种子的根尖细胞中出现的染色体畸变具有多种类型,而且畸变频率明显高于对照组。重离子对多种细胞器也产生了严重损伤,受损DNA具有一定的修复能力,测定了四种作物种子的半致死剂量及失活截面,找到了四种作物之间辐射敏感性的差异,讨论了细胞器损伤与生理过程异常的关系和受损DNA的修复过程。 The biological effects of 46.6MeV/u ~(12)C~(6+) ions on four kinds of plant seeds were studiedat HIRFL of Institute of Modern Physics (IMP), Academia Sinica. The results indicate that seriousinjuries were presented on not only external features of the seeds but also internal cells due to the bombardment and penetration of the ions. The heavy ions can significantly inhibitgermination and growth of the seeds and can affect physiological functions. In root tip cells ofirradiated seeds...     

低能离子注入育种中次级效应影响的模拟研究

低能离子注入育种作为一种有效的育种方法在实践中进行了大量的尝试并取得了一系列重要成果,但其作用机理一直都存在着巨大的争议,特别是射程很短的低能重离子如何穿透到种子内部触发生物效应。本研究利用SRIM、CASINO、Geant4模拟程序对低能离子注入生物样品的离子注入深度进行模拟和定量分析,并对次级粒子可能产生的影响进行了定量模拟研究。结果显示,低能重离子本身射程一般都小于1 μm,选用轻离子、提高注入能量、采用干种子进行注入,都有利于增加穿透深度。次级过程中,反冲质子的最大射程比初级入射离子的稍大,不能显著提升穿透能力。次级过程产生的粒子中只有X射线可以明显提高穿透种子的深度,只要剂量足够大,总会有少量X射线穿透到很深的地方。The breeding method by low-energy ion implantation has been proved to be a valuable breeding method by a large number of practical attempts, but the mechanism of the method has always been in a large dispute. The most difficult thing to be understood is how the low energy heavy ion with such a short range (normally shorter than 1 μm) can penetrate into the inner part of seeds to trigger the biological effects. In this paper, simulations with quantitative analysis were performed for the low energy ion implantating into biological samples and the effects caused by the secondary particles using SRIM, CASINO and Geant4 simulation programs. The results showed that the ranges of low energy heavy ions are normally less than 1 μm. The ranges can become longer if dry seeds and light ions are used with a higher energy. The ranges of recoil protons are only a little longer than that of the primary ions. Among the secondary particles produced in the ion implanting process, only the X-ray can obviously increase the penetration depth in seeds. There always will be a small amount of X-rays which can penetrate into the deeper place in the seed if the ion dose is high enough.     

Incident particle range dependence of radiation damage in a power bipolar junction transistor

The characteristic degradations in silicon NPN bipolar junction transistors(BJTs) of type 3DD155 are examined under the irradiations of 25-MeV carbon(C),40-MeV silicon(Si),and 40-MeV chlorine(Cl) ions respectively.Different electrical parameters are measured in-situ during the exposure of heavy ions.The experimental data shows that the changes in the reciprocal of the gain variation((1/β)) of 3DD155 transistors irradiated respectively by 25-MeV C,40-MeV Si,and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence.The(1/β) of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence,a little smaller when the device is irradiated by 40-MeV Si ions,and smallest in the case of the 40-MeV Cl ions irradiation.The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.     

拟南芥胚的不同区域对MeV离子辐照的响应

利用不同能量的质子在大气环境中辐照拟南芥的含水种子，能量从1.1MeV到6.5MeV.根据模拟计算结果，相应能量的离子对种子的损伤区域分别为胚的浅层、胚的一半和整个胚.本实验中，具有较高能量的质子可以完全均匀地作用于拟南芥生长、发育及遗传密切相关的胚茎端分生组织，而能量较低的质子则不能直接作用于茎端分生组织.实验所用质子注量范围为4×10⁹ions/cm²—1×10¹⁴ions/cm².实验结果显示，虽然拟南芥种子的发芽率和幼苗存活率随离子注量增加都呈现下降的趋势，但对应于不同的胚损伤区域，即在不同的入射质子能量条件下，注量曲线具有各自的特征.实验结果显示，拟南芥种子中除了胚茎端分生组织作为对离子辐照敏感的辐射主靶外，茎端分生组织之外的胚区域可能作为离子辐射次靶，影响到最终的辐射生物学效应. 关键词： 离子辐照 拟南芥 胚区域 生物效应     

25 MeV/u Kr辐照下PET薄膜的损伤机制研究

通过25 MeV/u 86 Kr离子辐照叠层结晶聚对苯二甲酸乙二醇酯膜（PET）, 在不同的电子能损（3.40-7.25 keV/nm）和离子注量(5×1011----3×1012 ions/cm2)辐照条件下, 对Kr离子在PET中引起的辐照损伤效应进行了研究。借助傅里叶变换红外光谱分析,通过对样品的红外吸收峰进行扣除基底后的Lorentz拟合,分析了与主要官能团对应的吸收峰强度的变化趋势, 研究了化学结构与组分在重离子辐照下的变化规律; 利用X射线衍射光谱仪测量, 研究了Kr离子在PET潜径迹中引起的非晶化过程,并通过对吸光度和非晶化强度随离子注量的指数衰减规律的分析, 获得了不同电子能损离子辐照PET时主要官能团的损伤截面和非晶化截面及对应的潜径迹半径。 At room temperature, polyethylene terephthalate(PET) foil stacks were irradiated by 25 MeV/u Kr ions in the electronic stopping power range(3.3--7.66 keV/nm) and the fluence range from 5×1011 to 3×1012 ions/cm2. The behaviour of the main function groups with fluence and electronic stopping power were studied by using Fourier transform infrared(FTIR) spectroscopy, the degradation of the function group was investigated with the Lorentz fitting subtracted baseline. The amorphous processes in the latent tracks of PET were studied by X ray diffraction(XRD) measurements. The Kr ion induced degradation cross section and amorphisation cross sections(radii) for different electronic energy loss were acquired from the experimental data(FT IR and XRD) by exponential decay function respectively.      

94MeV Xe离子辐照引起的薄膜硅光学带隙变化研究

室温下,用94MeV的Xe离子辐照纳米晶和非晶硅薄膜以及单晶硅样品,辐照量分别为1.0×1011,1.0×1012和1.0×1013ions/cm2。所有样品均在室温下用UV/VIS/NIR光谱仪进行检测分析。通过对比研究了纳米晶、非晶、单晶硅样品的光学带隙随Xe离子辐照量的变化。结果表明,不同结构的硅材料中Xe离子辐照引起的光学带隙变化规律差异显著:随着Xe离子辐照量的增加,单晶硅的光学带隙基本不变,非晶硅薄膜的光学带隙由初始的约1.78eV逐渐减小到约1.54eV,而纳米晶硅薄膜的光学带隙则由初始的约1.50eV快速增大至约1.81eV,然后再减小至约1.67eV。对硅材料结构影响辐照效应的机理进行了初步探讨。     

高He通量注入条件下F/M和ODS钢中纳米微结构对He泡形核和长大的影响

利用LEAF装置提供的2 MeV的He离子,在500和600 °C分别对新型F/M钢-SIMP钢和ODS钢(MA956和Eurofer-ODS钢)注入1×1017 ions/cm2的高通量He离子,借助透射电子显微镜,表征了辐照后三种材料的肿胀行为,验证了各材料中纳米微结构(晶界,析出相和纳米氧化物)对辐照后He泡成核和长大的影响。结果表明,基于材料中晶界和析出相对He泡生长的抑制作用,温度为500 °C时,SIMP和Eurofer-ODS钢表现出较高的抗辐照肿胀性能,而MA956中纳米界面He泡成核和长大作用不明显,表现出较差的抗辐照肿胀性能;此外,温度为600 °C时,Eurofer-ODS钢由于其晶界和氧化物界面的较强作用,表现出较好的抗辐照肿胀性能。总体来说,在高He通量注入条件下,材料中纳米结构的存在会抑制He泡长大的过程,但不同材料中纳米结构对He影响作用不同。     

Optical spectroscopy study of damage induced in 4H-SiC by swift heavy ion irradiation

Single crystals of 4H-SiC were irradiated with swift heavy ions (332 MeV Ti, 106 MeV Pb and 2.7 GeV U) in the electronic energy loss regime. The resulting damage was investigated with UV-visible optical absorption spectroscopy and micro-Raman spectroscopy. The evolution of the Raman data with fluence shows an accumulation of isolated point defects without amorphization of the material and a partial recrystallization of the structure, but only at the lowest fluence. Furthermore, the longitudinal optical phonon-plasmon coupling mode disappears upon irradiation, suggesting a strong perturbation of the electronic structure. This evolution is consistent with the optical bandgap decrease and the Urbach edge broadening that was also previously observed for the irradiation with 4 MeV Au ions.     

Carbon (70 MeV) and copper (120 MeV) ions irradiation effects in Makrofol-N

Makrofol-N polycarbonate was irradiated with carbon (70 MeV) and copper (120 MeV) ions to analyze the induced effects with respect to optical and structural properties. In the present investigation, the fluence for carbon and copper beams was kept in the range of 1×10¹¹– 1×10¹³ ions/cm² to study the swift heavy ion induced modifications. UV–VIS, FTIR and XRD techniques were utilized to study the induced changes. The analysis of UV–VIS absorption studies revealed that the optical energy gap was reduced by 17% on carbon irradiation, whereas the copper beam leads to a decrease of 52% at the highest fluence of 1×10¹³ ions/cm². The band gap can be correlated to the number of carbon atoms, N, in a cluster with a modified Robertson's equation. In copper (120 MeV) ions irradiated polycarbonate, the number of carbon atoms in a cluster was increased from 63 to 269 with the increase of ion fluence from 0 to 1×10¹³ ions/cm², whereas N is raised only up to 91 when the same polymer films were irradiated with carbon (70 MeV) ions under similar conditions. FTIR analysis showed a decrease in almost all characteristic absorption bands under irradiation. The formation of hydroxyl (? OH) and alkene (C?C) groups were observed in Makrofol-N at higher fluence on irradiation with both types of ions, while the formation alkyne end (R? C≡ CH) group was observed only after copper ions irradiation. The radii of the alkyne production of about 3.3 nm were deduced for copper (120 MeV) ions. XRD measurements show a decrease in intensity of the main peak and an increase of the average intermolecular spacing with the increase of ion fluence, which may be attributed to the structural degradation of Makrofol-N on swift ion irradiation.     

4H-SiC NMOS电子、质子辐照数值模拟

 分析了高能电子、质子对4H-SiC的损伤机理,建立了4H-SiC NMOS器件物理模型。电子、质子辐照效应模型。应用ISE-TCAD软件进行数值模拟计算,得出在能量为2.5 MeV、注量为5×10¹³ cm^-2的电子辐照及能量为6.5 MeV、注量为2×10¹⁴ cm^-2的质子辐照下,4H-SiC NMOS转移特性曲线和亚阈值漏电流曲线变化的初步规律。数值模拟结果与相同条件下Si NMOS实验结果吻合较好。     

HI-13串列加速器生物用新终端7Li离子束流监测诊断研究

7Li离子属于高LET辐射,是辐射生物学基础研究中常用的重离子射线之一,它是硼中子俘获治疗癌症中起关键作用的离子,在辐射诱变育种等领域也有较好的应用前景。实验在北京HI-13串列加速器R20支线生物用新终端上进行,对43 MeV 7Li离子束斑大小、均匀性和监测注量的准确性进行测量和评估,结果表明:均匀性好于90%的最大束斑面积为5.0cm×5.0cm;4.2×104 ～1.5×105 particles/cm2/s注量率范围内,两种不同探测器测得的注量率变化呈线性关系,闪烁体探测器监测的注量与CR39探测器测得的绝对注量的误差小于10%。这些束流特性能够满足辐射生物学实验要求,有利于进一步开展与硼中子俘获治疗癌症或辐射诱变育种中7Li离子的辐射生物学相关研究。7Li ion with high linear energy transfer (LET) radiation has been used in radiobiological research, takes main effect in Boron Neutron Capture Therapy and is applied in radiation mutagenic breeding. This experiment was carried on the new terminal established for radiobiological application, located at the end of R20 branch beam line of HI-13 tandem accelerator. The beam qualities of 7Li ions of 43MeV generated by HI-13 tandem accelerator, including spot size and uniformity and particle fluence accuracy were measured using different detection methods. The results showed that beam uniformity was over 90% at 5cm×5cm area, the flux of S1 and M3 had a good linear relationship as particle flux ranged from 4.2×104 particles/cm2/s to 1.5×105 particles/cm2/s, and particle fluence accuracy was better than 90%. All the results showed that the beam qualities of 7Li ions finely met the basic requirements for radiation biological experiment. It provides important method to study biological effects for fundamental research and tumor therapy or radiation mutagenic breeding application associated with 7Li ions.