共查询到20条相似文献,搜索用时 500 毫秒
1.
采用质点网格法(particle-in-cell),利用MAGIC软件模拟了场致发射的物理过程.对两 种典型的场致发射模型(Spindt阴极发射体和金刚石薄膜发射体)分别进行了模拟.对Spind t阴极发射,研究了发射特性与尖端尺寸,尖端与栅极面的相对高度的关系.对金刚石薄膜发 射,比较了三极管和四极管的发射特性,以及薄膜面积对发射特性的影响,得出金刚石薄膜 发射体优于Spindt发射体的特性.
关键词:
场致发射
MAGIC程序
Spindt发射体
金刚石薄膜发射体 相似文献
2.
金刚石镶嵌非晶碳膜表面形貌对场致电子发射的影响 总被引:2,自引:0,他引:2
用微波等离子体化学气相沉积设备,在经过不同研磨预处理的金属钼衬底上沉积出了表面形貌有较大差异的金刚石镶嵌非晶碳膜,分别用扫描电子显微镜(SEM)、金相显微镜和X射线衍射谱(XRD)以及Raman光谱对样品进行了分析测试.研究了各样品的场致电子发射特性,结果发现薄膜表面由大量镶嵌有金刚石小晶粒的非晶碳球组成,在我们的实验范围内,薄膜表面非晶碳球尺寸越小,场致电子发射效果越好 相似文献
3.
4.
5.
6.
7.
8.
9.
10.
11.
LPCVD氮化硅薄膜室温高强度可见光发射 总被引:4,自引:2,他引:2
在5.0eV的激光激发下,在室温下LPCVD氮化硅薄膜可发射高强度可见荧光,其峰位位置分别为2.97,2.77,2.55,2.32,2.10和1.90eV的六个PL峰,建立了其可见荧光发射的能隙态模型,并初步讨论了其发光机制. 相似文献
12.
Electroluminescence devices in the structure of anode/poly(methylphenylsilane)/hydrogenated amorphous carbon nitride/cathode have been fabricated. A strong visible emission is observed at room temperature and the emission intensity increases with the increase of the current density. In this device, poly(methylphenylsilane) acts as a hole transporting and electron blocking layer. It is evidenced that the emission region is near the interface between the poly(methylphenylsilane) and hydrogenated amorphous carbon nitride layers. The electroluminescence properties are discussed and compared with the photoluminescence of the hydrogenated amorphous carbon nitride film. 相似文献
13.
C.Q. Qu L. Qiao C. Wang S.S. Yu W.T. Zheng Y.Z. Fu Q. Jiang 《Solid State Communications》2008,146(9-10):399-402
The first-principles density-functional theory is used to study the geometrical structures and field emission properties of different boron nitride nanocones with 240 disclination. It is found that the nanocones can be stable under applied electric field and the emission current is sensitively dependent on the tips of nanocones. The nanocones with homonuclear bonds at the tip can introduce additional energy states near Fermi level, which can reduce the ionization potential and increase the emission current of these boron nitride nanocones. This investigation indicates that the boron nitride nanocone can be a promising candidate as a field emission electron source. 相似文献
14.
15.
D. K. T. Ng M. H. Hong L. S. Tan Y. W. Zhu C. H. Sow 《Applied Physics A: Materials Science & Processing》2008,93(3):685-689
Patterned gallium nitride nanowires and nanodots have been grown on n-Si (100) substrates by pulsed laser deposition. The
nanostructures are patterned using a physical mask, resulting in regions of nanowire growth of different densities. The field
emission (FE) characteristics of the patterned gallium nitride nanowires show a turn-on field of 9.06 V/μm to achieve a current
density of 0.01 mA/cm2 and an enhanced field emission current density as high as 0.156 mA/cm2 at an applied field of 11 V/μm. Comparing the peak FE current densities of both the nanowires and nanodots, the peak FE current
density of nanowires is around 700 times higher than that of the peak FE current density of nanodots since nanodots have a
lower aspect ratio compared to nanowires. The field emission results indicate that, besides density difference, crystalline
quality as well as the low electron affinity of gallium nitride, high aspect ratio of gallium nitride nanostructures will
greatly enhance their field emission properties. 相似文献
16.
Olaosebikan D Yerci S Gondarenko A Preston K Li R Dal Negro L Lipson M 《Optics letters》2011,36(1):4-6
Stimulated emission from sensitized erbium ions in silicon-rich silicon nitride is demonstrated by pump-probe measurements carried out in waveguides. A decrease in the photoinduced absorption of the probe at the wavelength of erbium emission is observed and is attributed to stimulated emission from erbium excited indirectly via localized states in the silicon nitride matrix. 相似文献
17.
18.
L. Trinkler B. Berzina M. Benabdesselam P. Iacconi L. Btter-Jensen K. Atobe 《Radiation measurements》2004,38(4-6):615-618
Spectral properties of cubic boron nitride have been studied using methods of photoluminescence (PL), X-ray excited luminescence (XL), thermoluminescence (TL) and optically stimulated luminescence. It is found that emission of cubic boron nitride is presented by 4 subbands, their relative yield is determined by the excitation type: blue, green (dominant) and red bands are observed in PL, ultraviolet, blue (dominant), green and red bands—in XL. Three thermal peaks are found in TL curves in the 0–700°C temperature range, their presence and intensity depend on radiation type used. A tentative correspondence between thermal peaks and emission bands is found. 相似文献
19.
等离子体增强化学气相沉积氮化碳薄膜过程中的光学发射谱研究 总被引:1,自引:1,他引:0
利用光学发射谱技术对直流辉光放电等离子体增强的化学气相沉积氮化碳薄膜过程中的等离子体进行了原位诊断,结果表明主要的辐射有N2的第二正系跃迁、N2^ 的第一负系跃迁、CN和NH的紫外跃迁。研究了气源中氢气含量、放电电流及沉积气压的变化对N2(337.1nm),N2^ (391.4nm)和CN(388.3nm)辐射强度的影响,并在此基础上探讨了这几种跃迁的激发机制,其结果为氮化碳合成中优化沉积参数、控制实验过程提供了依据。 相似文献
20.
单晶LaB6场发射阵列的电化学腐蚀工艺 总被引:2,自引:0,他引:2
六硼化镧(LaB6)场发射尖锥阵列的刻蚀工艺是制备LaB6场发射阵列阴极的关键。在(111)面单晶LaB6基片上,用等离子体增强化学气相沉积法制备氮化硅层做掩膜,光刻后采用电化学腐蚀方法对基片进行刻蚀,得到具有一定高度的LaB6尖锥场发射阵列。讨论了单晶LaB6的电化学腐蚀机理。改变各种电化学腐蚀参数,包括电解液成分、电解液浓度、阳极所加电压,用电子扫描显微镜观察样品形貌。结果发现H3PO4是刻蚀单晶LaB6的理想电解液,它克服了过去电化学实验中经常遇到的尖锥各向异性问题。随着电解液浓度或阳极电压的增大,尖锥高度增加,但是基底表面变得更为粗糙。另一方面,阳极电压太小时,有横向刻蚀现象产生,不利于提高发射体的场增强因子。此外,在二极管结构中初步测试了LaB6尖锥场发射阵列的电流发射特性,在真空度2×10-4 Pa、极间距离0.1 mm、阳极电压900 V下,发射电流达到13 mA。 相似文献