Microwave assisted novel MoBi2S5 nanoflowers: Synthesis,characterization, photoelectrochemical performance

In the present article, we have studied the effect of post annealing treatment on microstructural, optical and photoelectrochemical (PEC) properties of MoBi₂S₅ thin films synthesized by microwave assisted technique. The synthesized thin films are vacuum annealed for 4 h at 473 K temperature. The X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and UV–Vis–NIR spectrophotometer techniques were used for characterization of the as deposited and annealed MoBi₂S₅ thin films. The XRD patterns confirm the synthesized and annealed thin films have nanocrystalline nature with rhombohedral-orthorhombic crystal structure. SEM micrographs indicate that, nanoflowers exhibit sharper end after annealing. The optical absorption study illustrates that the optical band gap energy has been decrease from 2.0 eV to 1.75 eV with annealing. Finally, applicability of synthesized thin films has been checked for PEC property. The J-V curves revealed that synthesized thin film photoanodes are suitable for PEC cell application. As well, used simple, economical method has great potential for synthesis of various thin film materials.     

Copper phthalocyanine films deposited by liquid-liquid interface recrystallization technique (LLIRCT)

The simple recrystallization process is innovatively used to obtain the nanoparticles of copper phthalocyanine by a simple method. Liquid-liquid interface recrystallization technique (LLIRCT) has been employed successfully to produce small sized copper phthalocyanine nanoparticles with diameter between 3-5 nm. The TEM-SAED studies revealed the formation of 3-5 nm sized with beta-phase dominated mixture of alpha and beta copper phthalocyanine nanoparticles. The XRD, SEM, and the UV-vis studies were further carried out to confirm the formation of copper phthalocyanine thin films. The cyclic voltametry (CV) studies conclude that redox reaction is totally reversible one electron transfer process. The process is attributed to Cu(II)/Cu(I) redox reaction.     

石墨烯氧化物薄膜电极的光电化学特性

采用浸渍-提拉法制备了一系列石墨烯氧化物(GO)薄膜,并通过X射线衍射(XRD),扫描电镜(SEM),傅里叶变换红外光谱,紫外-可见吸收光谱和光电化学测量等技术对样品进行了表征.在GO电极上观察到阴极光电流,且光电流密度受薄膜的厚度影响.GO薄膜电极厚度为27nm时,光电流密度为0.25μA·cm-2.此外,GO电极的光电响应还受紫外光照影响,随着紫外光照时间的延长,阴极光电流逐渐减小.该工作提供了简便的通过控制薄膜厚度或紫外光照时间来控制GO薄膜半导体光电化学性能的方法.     

Novel chemical synthesis of polypyrrole thin film electrodes for supercapacitor application

Present investigation describes the cost-effective, novel and simple chemical synthesis of polypyrrole (PPy) thin films for supercapacitor application. These PPy films are characterized by different techniques such as X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The XRD pattern reveals the amorphous nature of PPy thin film, which is highly feasible for supercapacitors. Further, FTIR study confirms the formation of PPy. The surface morphological study exhibit the coverage of uniform and smooth morphology on thin film. The electrochemical supercapacitive properties of PPy thin films are evaluated using cyclic voltammetry (CV) in 0.5 M H₂SO₄ electrolyte, which exhibits the maximum specific capacitance of 329 Fg⁻¹ at the scan rate of 5 mV s⁻¹. Additionally, an equivalent series resistance (ESR) of PPy thin films is found to be 1.08 Ω using electrochemical impedance measurement.     

Preparation of Nano-crystalline Tungsten Carbide Thin Film by Magnetron Sputtering and Their Electrocatalytic Property for PNP Reduction

Nano-crystalline tungsten carbide thin films were deposited on Ni substrates by magnetron sputtering using WC as target material. The crystal structure and morphology of the thin films were characterized by X-ray diffraction （XRD） and scanning electron microscopy （SEM） Electrochemical investigations showed that the electrode of the thin film exhibited higher electrocatalytic activity in the reaction of p-nitrophenol （PNP） reduction. FT-IR analysis indicated that p-aminophenol （PAP） was synthesized after two step reduction of PNP on nano-crystalline tungsten carbide thin film electrode.     

宽带隙Cu(In,Al)Se2薄膜的制备及表征

以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜, 通过真空蒸镀法在CIS薄膜上沉积Al膜, 经硒化退火后在氧化铟锡(ITO)基底上制备了Cu(InAl)Se2(CIAS)薄膜. 采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis)对其形貌、结构、成分及光学吸收性质进行了表征. 结果表明, 制备的CIAS薄膜颗粒均匀, 表面平整致密, 呈黄铜矿结构. 薄膜在可见光区具有良好的吸收, 带隙约为1.65 eV.     

电沉积法制备介孔TiO_2/CdS薄膜光电极

采用阴极恒电位沉积法,在介孔TiO2薄膜上制备了介孔TiO2/CdS薄膜光电极,用XRD,SEM,Raman,SPS和UV-Vis等多种手段对薄膜电极进行了表征.结果表明,CdS成功沉积到介孔TiO2的表面和孔道内,形成了异质结结构.通过光电流作用谱考察了该复合体薄膜电极的光电性能,结果表明,与单纯的介孔TiO2薄膜相比,其光电转换效率显著提高,这是由于CdS具有吸收可见光的特性以及CdS与介孔TiO2形成异质结从而使得光生载流子更容易分离的结果.     

Structure and photochromic properties of molybdenumphosphoric acid/TiO<Subscript>2</Subscript> composite films

TiO₂ sol-gel composite films with dropping molybdenumphosphoric acid (PMoA) have been prepared by sol-gel method. The structure and constitute of composite thin films were studied with Fourier transforms infrared spectroscopy (FT-IR) atomic force microscopy (AFM), and X-ray diffraction (XRD) patterns, respectively. The photochromic behavior and mechanism of composite thin films were investigated with ultraviolet-visible spectra (UV-vis) and electron spin resonance (ESR). FT-IR results showed that the Keggin geometry of PMoA was still preserved inside PMoA/TiO₂ composite thin films, and a charge transfer bridge was built at the interface of PMoA and TiO₂ through the Mo-O-Ti bond. Surface topography of the composite film showed obvious changes before/after adding PMoA, and the surface topography of composite films showed obvious changes before/after irradiating as well. Composite thin film had reversible photochromic properties. Irradiated with UV light, transparent films changed from colorless to blue and they can bleach completely with ambient air in the dark. ESR results showed that TiO₂ were excitated by UV light to produce electrons, which deoxidized PMoA to produce heteropolyblues. The photochromic process of PMoA/TiO₂ system was carried through electron transfer mechanism.     

TiO2-MoO3复合纳米管阵列薄膜的制备及其可见光活性

通过阳极氧化的方法制备TiO₂纳米管薄膜, 在MoO₃存在的条件下对该薄膜进行热处理得到TiO₂-MoO₃复合纳米管阵列薄膜. 利用X射线衍射(XRD), 扫描电子显微镜(SEM), X射线光电子能谱(XPS), 电化学阻抗谱(EIS), Mott-Schottky 及光电化学方法对得到的薄膜进行了表征. XRD结果表明, TiO₂-MoO₃复合纳米管薄膜中的TiO₂主要为锐钛矿晶型. SEM实验证实了薄膜纳米管结构的存在, 样品中的MoO₃均匀地分散在TiO₂纳米管表面. 利用XPS方法分析了TiO₂-MoO₃复合纳米管薄膜元素的组成, 结果表明, MoO₃在TiO₂表面形成TiO₂-MoO₃复合纳米管薄膜. 研究了热处理温度以及热处理时间对样品的光电化学性能的影响, 相对于单纯TiO₂纳米管薄膜, 适量引入MoO₃提高了样品在可见光区的光电响应能力, 样品的平带电位负移. 在450 °C热处理60 min制得的TiO₂-MoO₃复合半导体纳米管阵列薄膜光电响应活性最高.     

ITO基底上ZnO薄膜的制备以及刻蚀图形的扫描电化学显微镜表征

在氧化铟锡(ITO)导电玻璃的衬底上,利用直接电沉积方法制备了ZnO纳米线或ZnO薄膜.然后利用存储有HCI刻蚀剂的琼脂糖微图案印章对其进行了化学刻蚀以形成不同的图形.利用扫描电子显微镜(SEM)、X射线衍射(XRD)和扫描电化学显微镜(SECM)分别对ITO衬底上的ZnO薄膜的结构、形貌和电化学性质进行表征.     

锂离子电池锡薄膜负极制备及电化学性能研究

应用真空蒸发法在泡沫铜基底上制备锡薄膜负极.XRD、SEM分析表征薄膜的物相结构及其微观形貌,并测试了材料的电化学性能.结果表明,泡沫铜基底的三维结构增强了活性物质与基底的结合力.在同一基底温度下,锡颗粒随蒸发时间延长逐渐增大,电池电化学性能降低;而在同一时间内,升高基底温度,颗粒无明显变化,电池循环寿命有了很大提高.样品A″电池(基底温度:200℃,蒸发时间:0.5 h)经100次充放电循环后比容量仍达407.3 mAh·g-1.     

纳米二氧化钒薄膜的制备及红外光学性能

采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜, 在氮气气氛下热处理获得二氧化钒薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响, 利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析. 结果表明, 所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主, 经400 ℃、2 h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜, 提高热处理温度至450 ℃, 纳米结构VO2薄膜的晶粒尺寸减小. FT-IR结果显示,纳米VO2薄膜透射率对比因子超过0.99, 高温关闭状态下透射率接近0. 小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.     

纳米晶碳化钨薄膜对硝基甲烷还原的电催化性能

采用磁控溅射物理气相沉积技术在金属镍基体上制备碳化钨纳米晶薄膜. 薄膜具有纳米晶结构, 由粒径为20~35 nm的晶粒构成, 晶粒分布均匀, 晶相结构为非化学计量比的碳化钨(WC1-x). 采用电化学方法研究硝基甲烷在纳米晶碳化钨薄膜电极上的电化学还原性能和反应机理. 实验结果表明, 碳化钨薄膜电极对硝基甲烷电化学还原反应具有较好的催化性能, 当电极电位为-0.89 V(vs.SCE)时, 硝基甲烷还原为甲基羟胺的电流达14.9 mA/cm2, 其反应表观活化能为12.3 kJ/mol. 硝基甲烷在碳化钨薄膜电极上经过一步不可逆的电化学反应还原成甲基羟胺, 其控制步骤是电极反应的电荷传递过程.      

沉积电位对电沉积ZnS薄膜的影响

采用电沉积方法,在不同沉积电位条件下,在氧化锡铟(ITO)导电玻璃上沉积制备了ZnS薄膜,利用XRD、SEM和UV-VIS测试技术对在不同沉积电位所制备薄膜的晶相结构、表面微观形貌和光学性能进行了表征.研究结果表明:沉积电位在1.5 V—1.7 V范围内制备的ZnS薄膜呈非晶态,其可见光透过率从60 %降低到20 %,薄膜的光学带隙约为3.97 eV.在沉积电位为2.0 V条件下所沉积薄膜为ZnS结晶相和金属Zn混合相,薄膜透过率显著降低.     

Quantum size effect directed selective self-assembling of cobalt phthalocyanine on Pb(111) thin films

Adsorption and self-assembly of cobalt phthalocyanine (CoPc) molecules on Pb(111) thin films with a thickness ranging from 10 atomic monolayers (ML) to 20 ML were investigated by using scanning tunneling microscopy and spectroscopy (STM/STS). Unprecedented thickness-selective oscillating adsorption and self-assembly behavior of the molecules on the films were observed. STS measurement reveals that this oscillatory behavior arises from quantum size effect. The strong quantum confinement of electron motion in the Pb films modulates the electronic density of states at the Fermi level (DOS(EF)), leading to preferential adsorption at thicknesses of higher DOS(EF). The work provides an unambiguous evidence for quantum modulation of surface reactivities of a metal thin film.     

单步电沉积法制备CuInS2薄膜

采用单步电沉积法在Mo基底上制备了高质量的CuInS2薄膜. 用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了样品的结构和形貌, 研究了沉积电位、退火温度、pH值、反应物浓度等工艺条件对制备的CuInS2薄膜形貌、组分及性能的影响. 制备的CuInS2薄膜致密平整, 呈黄铜矿结构, 晶粒大小为1-2 μm. 用紫外-可见光分光光度计测试了其光学性能, 计算得到常温下禁带宽度为1.41 eV, 非常适合用作薄膜太阳电池的吸收层材料.     

Spray deposited amorphous RuO2 for an effective use in electrochemical supercapacitor

The structural, surface morphological and optical properties of sprayed ruthenium oxide thin film were investigated using XRD, SEM and optical absorption measurements. The structural analysis from XRD pattern showed the formation of RuO₂ in amorphous phase. The scanning electron micrographs revealed network-like morphology of ruthenium oxide. The optical studies showed a direct band gap of 2.4 eV for ruthenium oxide films. Ruthenium oxide thin film exhibited a cyclic voltammogram indicative high reversibility of a typical capacitive behavior in 0.5 M H₂SO₄ electrolyte. A specific capacitance of 551 F/g was obtained with ruthenium oxide thin film (electrode) prepared by spray pyrolysis method. The specific capacitances of 551 and 450 F/g at the scan rate of 5 and 125 mV/s, respectively, indicate that the capacitance value varies inversely with scan rate.     

The electrochromic properties of lutetium and other phthalocyanines

The electrochemical properties of thin films of metal phthalocyanines on conducting substrates are investigated. The electrochromism of lutetium diphthalocyanine is discussed and a film electrode model is proposed based on an irreversible charge transfer step. This model accounts for the main concentration and voltammetric sweep-rate dependencies. The lifetime of lutetium diphthalocyanine films under continuous redox reactions in aqueous solution is restricted due to chemical attack by hydroxide ions. The electrochromic effect is displayed by other phthalocyanines; in monophthalocyamines it is associated with oxidation and reduction of the metal atom. Tin diphthalocyanine behaves similarly to lutetium diphthalcyanine, the redox reaction occurring at the phthalocyanine rings.     

Controlled electrodeposition of Cu-Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cells

The electrochemical deposition of Ga and Cu-Ga alloys from the deep eutectic solvent choline chloride/urea (Reline) is investigated to prepare CuGaSe(2) (CGS) semiconductors for their use in thin film solar cells. Ga electrodeposition is difficult from aqueous solution due to its low standard potential and the interfering hydrogen evolution reaction (HER). Ionic liquid electrolytes offer a better thermal stability and larger potential window and thus eliminate the interference of solvent breakdown reactions during Ga deposition. We demonstrate that metallic Ga can be electrodeposited from Reline without HER interference with high plating efficiency on Mo and Cu electrodes. A new low cost synthetic route for the preparation of CuGaSe(2) absorber thin films is presented and involves the one-step electrodeposition of Cu-Ga precursors from Reline followed by thermal annealing. Rotating disk electrode (RDE) cyclic voltammetry (CV) is used in combination with viscosity measurements to determine the diffusion coefficients of gallium and copper ions in Reline. The composition of the codeposited Cu-Ga precursor layers can be controlled to form Cu/Ga thin films with precise stoichiometry, which is important for achieving good optoelectronic properties of the final CuGaSe(2) absorbers. The morphology, the chemical composition and the crystal structure of the deposited thin films are analysed by scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) and X-ray diffraction (XRD). Annealing of the Cu-Ga films in a selenium atmosphere allowed the formation of high quality CuGaSe(2) absorber layers. Completed CGS solar cells achieved a 4.1% total area power conversion efficiency.     

Synthesis and characterization of chemically grown electrochromic tungsten oxide

Tungsten oxide thin films, which are cathodic coloration materials that are used in electrochromic devices, were prepared by a chemical growth method and their electrochromic properties were investigated. The thin films of WO₃ were deposited onto electrically conducting substrates: fluorine doped tin oxide coated glass (FTO) with sheet resistance of about 10 Ω/cm. Transparent, uniform and strongly adherent thin film samples of WO₃ were studied for their structural, morphological, optical and electrochromic properties. The XRD data confirmed the monoclinic crystal structure of WO₃ thin films. The direct band gap Eg for the films was found to be 2.95 eV which is good for electrochromic device application. The electrochromism of WO₃ thin film was evaluated in 0.5 M LiClO₄/propylene carbonate for Li⁺ intercalation. Electrochromic properties of WO₃ thin films were studied with the help of Cyclic Voltammetry (CV), Chronoamperometry (CA) and Chronocoulometry (CC) techniques.