| 石墨烯氧化物薄膜电极的光电化学特性 |
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| 引用本文： | 张晓艳,孙明轩,孙钰珺,李靖,宋鹏,孙通,崔晓莉.石墨烯氧化物薄膜电极的光电化学特性[J].物理化学学报,2011,27(12):2831-2835. |
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| 作者姓名： | 张晓艳 孙明轩 孙钰珺 李靖 宋鹏 孙通 崔晓莉 |
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| 作者单位： | Department of Materials Science, Fudan University, Shanghai 200433, P. R. China |
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| 基金项目： | 国家重点基础研究发展规划项目(973)，上海市科学技术委员会纳米项目，复旦大学研究生创新基金 |
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| 摘 要： | 采用浸渍-提拉法制备了一系列石墨烯氧化物(GO)薄膜,并通过X射线衍射(XRD),扫描电镜(SEM),傅里叶变换红外光谱,紫外-可见吸收光谱和光电化学测量等技术对样品进行了表征.在GO电极上观察到阴极光电流,且光电流密度受薄膜的厚度影响.GO薄膜电极厚度为27nm时,光电流密度为0.25μA·cm-2.此外,GO电极的光电响应还受紫外光照影响,随着紫外光照时间的延长,阴极光电流逐渐减小.该工作提供了简便的通过控制薄膜厚度或紫外光照时间来控制GO薄膜半导体光电化学性能的方法.
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| 关 键 词： | 石墨烯氧化物 光电化学性能 阴极光电流 膜厚 紫外光照 |
| 收稿时间： | 2011-06-09 |
| 修稿时间： | 2011-09-15 |
Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes |
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| ZHANG Xiao-Yan,SUN Ming-Xuan,SUN Yu-Jun,LI Jing,SONG Peng,SUN Tong,CUI Xiao-Li.Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes[J].Acta Physico-Chimica Sinica,2011,27(12):2831-2835. |
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| Authors: | ZHANG Xiao-Yan SUN Ming-Xuan SUN Yu-Jun LI Jing SONG Peng SUN Tong CUI Xiao-Li |
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| Institution: | Department of Materials Science, Fudan University, Shanghai 200433, P. R. China |
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| Abstract: | A series of graphene oxide (GO) thin films were prepared by a dip-coating method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR) spectroscopy, ultraviolet-visible (UV-Vis) light absorption, and photoelectrochemical measurements.A cathodic photocurrent was observed for the GO electrodes and the photocurrent density was influenced by the thickness of the films. The GO film electrode with an average thickness of 27 nm gave a by UV irradiation and the cathodic photocurrent decreased gradually with UV irradiation time. This work provides a simple method to change the photoelectrochemical property of GO films by controlling the film thickness or UV irradiation time. |
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| Keywords: | Graphene oxide Photoelectrochemical property Cathodic photocurrent Film thickness UV irradiation |
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