Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.     

Crystal Structure of 10-(2'''',5''''-Dimethoxybenzylidene) Anthrone

1 INTRODUCTION The 10-benzylidene anthrones which are important intermediate for organic syntheses[1～3] usually possess thermochromism[4] and photo- chromism[5], and have been found recently to have evident anti-cancer activity[6]. We found that the substituents in the phenyl ring will affect the bioactivity of those compounds. For more deeply investigating the structure-activity relationships (SAR) and understanding interactions between the three dimensional structure of the compound …     

丝瓜种子萌芽及子叶生长过程中谷氨酰胺合成酶同工酶的变化

测定了丝瓜种子萌芽及子叶不同生长阶段的谷氨酰胺合成酶(GS)的活性及其同工酶的变化．除了发育上的变化外，光和外源氮对GS活性及其同工酶影响也是显著的．无论外源氮(N)是否存在，GS活性在种子萌芽和子叶生长初期是逐渐升高的，于第6天达到最大，其后活性逐步降低．在光照下，外源氮对GS1诱导作用大于GS2；在无氮下，光对GS2的刺激大于GS1；在暗处，外源氮对GS1和GS2两者都有诱导作用．     

1GHz声表面横波谐振器的研究及应用

本文介绍声表面横波谐振器的设计及制作,并报导了我们研制的频率为１．１ＧＨｚ,插损３ｄＢ,有载Ｑ值大于２０００的声表面横波谐振器及其应用。     

电沉积法制备介孔TiO_2/CdS薄膜光电极

采用阴极恒电位沉积法,在介孔TiO2薄膜上制备了介孔TiO2/CdS薄膜光电极,用XRD,SEM,Raman,SPS和UV-Vis等多种手段对薄膜电极进行了表征.结果表明,CdS成功沉积到介孔TiO2的表面和孔道内,形成了异质结结构.通过光电流作用谱考察了该复合体薄膜电极的光电性能,结果表明,与单纯的介孔TiO2薄膜相比,其光电转换效率显著提高,这是由于CdS具有吸收可见光的特性以及CdS与介孔TiO2形成异质结从而使得光生载流子更容易分离的结果.     

β-环糊精包覆碳纳米管基质用于氨基酸及小分子聚合物的MALDI-FT MS研究

制备了可用作氨基酸及小分子聚合物的MALDI-FTMS分析基质的β-环糊精包覆多壁碳纳米管.通过引入β-环糊精改善其碳纳米管亲水性.所制备的β-环糊精包覆多壁碳纳米管的扫描电镜图表明,该碳纳米管呈现纳米带状结构.与通常的氧化碳纳米管相比,所制备的β-环糊精改性CNT具有更低的背景信号.进一步采用氨基酸及聚乙二醇等小分子化合物对所制备的碳纳米管进行评价,得到很强的氨基酸及聚乙二醇的碱金属离子加合峰,表明该材料可使小分子化合物解吸离子化,且背景干扰小不会影响到小分子化合物检测.由此可见,制备的β-环糊精包覆多壁碳纳米管适于小分子化合物的MALDI-MS分析.     

不同剂量率下锗硅异质结双极晶体管电离损伤效应研究

对于相同制作工艺的NPN锗硅异质结双极晶体管(SiGe HBT), 在不同辐照剂量率下进行⁶⁰Co γ射线的辐照效应与退火特性的研究. 测量结果表明, 两种辐照剂量率下, 随着辐照总剂量增加, 晶体管基极电流增大, 共发射极电流放大倍数降低, 且器件的辐照损伤、性能退化与辐照剂量率相关, 低剂量率下辐照损伤较高剂量率严重. 在经过与低剂量率辐照等时的退火后, 高剂量率下的辐照损伤仍较低剂量率下的损伤低, 即待测SiGeHBT具有明显的低剂量率损伤增强效应(ELDRS). 本文对相关的物理机理进行了探讨分析. 关键词： 锗硅异质结双极晶体管 低剂量率辐照损伤增强 辐照效应     

多层流化床传质浓度分布的研究

本文运用萘升华方法,通过实验测定了流化过程中,多层流化床内萘蒸汽的传质浓度分布,得到萘蒸汽浓度与进气量、颗粒进料量等因旁之间的关系式。为进一步研究多层流化床内气体介质与固体颗粒之间的对流换热系数打下基础。     

CdTiO_3纳米棒的可控制备及光催化产氢性能

以钛-乙二醇配合物纳米棒为模板,结合湿浸渍焙烧法制备了不同长度的钛酸镉(CdTiO3)纳米棒.采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、广角X射线粉末衍射仪(XRD)、傅里叶变换红外光谱仪(FTIR)、热重分析仪(TG)及紫外-可见光谱仪(UV-Vis)等对前驱体及CdTiO3纳米棒进行了表征.结果表明,得到的CdTiO3纳米棒长度分别约为50,20和10μm,且无杂相,晶化度高,尺寸均一.负载1%(质量分数)铂作为助催化剂后,制备的不同长度CdTiO3纳米棒具有比CdTiO3纳米粒子更高的光催化产氢活性.其中,最长的CdTiO3纳米棒具有最高的产氢活性(~52.9μmol/h).     

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.