Current-driven state-bistability and power-bistability in a DFB semiconductor laser subject to optical injection

In this paper, current-driven state-bistability and power-bistability in a distributed feedback (DFB) semiconductor laser (LD) subject to external optical injection have been investigated experimentally. The results show that, by sweeping the bias current of slave LD along different routes nearby the threshold, both the power-bistability and the state-bistability between locking and bimodal regime can be observed under the suitable injection power, but these bistable phenomena will disappear under much large injection power. Additionally, the dependence of the width of the state-bistablility loop on the injection power has been discussed.     

Self-detection of lasing characteristics for semiconductor ring laser diodes

A novel method of measurement of lasing characteristics for a ring laser diode is proposed without branching of the optical lasing power. The lasing power and the linewidth as a function of the injection current have been measured by detecting the RF power by the terminal voltage change of a ring LD. The linewidth is estimated to be 55 kHz atl=1.75l _th.     

Room-temperature slow light with semiconductor quantum-dot devices

We demonstrate room-temperature slow light that is electrically and optically controllable by using a quantum-dot (QD) semiconductor optical amplifier (SOA) at zero and low bias below the transparency current. The absorption spectrum of the QD SOA exhibits a spectral dip with a corresponding group-index dispersion and group delay owing to coherent population oscillation caused by the interaction of pump and probe laser light near resonance of the first heavy-hole-conduction-state transition. At an optical pump power of approximately 0.3 mW inside the single-mode waveguide without current injection, a group-index change of 3.0 with a bandwidth of 2 GHz was measured. This group-index change can be controlled by injection of electrical current and by changing the optical pump power.     

基于光注入Fabry-Perot半导体激光器实现同步全光分路时钟提取与波长转换

提出了一种利用Fabry-Perot（FP）半导体激光器同步提取波长转换的分路光时钟的新方法,并对该方法进行了数值模拟和实验验证.光注入半导体激光器会产生非线性单周期振荡特性,利用交叉增益调制效应及对单周期振荡的微波锁频效应,可从光时分复用信号中提取出波长转换的分路光时钟.采用一个FP半导体激光器作为全光分路时钟提取及波长转换器,数值模拟实现了从波长为1555 nm、速率为2×20 Gb/s的光时分复用信号中提取出波长转换为1550 nm、重复频率为20 GHz的分路光时钟,实验完成了从波长为155024 nm、重复频率为1236 GHz光脉冲信号中提取出相位噪声为-105 dBc/Hz的波长为154591 nm、重复频率618 GHz的分频光时钟.此外还详细研究了注入光功率、波长失谐、FP激光器偏置电流及纵模选择对光时钟提取的影响,实验结果和数值模拟结果符合.该方法在光时分复用混合波分复用通信系统中实现全光解复用及波长路由有着重要的应用价值. 关键词： 波长转换 时钟提取 光注入 非线性动力学     

GaN-based violet laser diodes grown on free-standing GaN substrate

A violet laser diode (LD) structure is grown on a free-standing c-plane GaN substrate and 4~μ m× 800~μ m ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet-coating and chip-mounting conditions are investigated under pulse mode operation. The active region temperatures of p-side up and p-side down mounted LDs are calculated with different injection currents. The calculated thermal resistances of p-side up and p-side down mounted LDs are 4.6~K/W and 3~K/W, respectively. The threshold current of the p-side down mounted LD is much lower than that of the p-side up mounted LD. The blue shift of the emission wavelength with increasing injection current is observed only for the LD with p-side down mounting configuration, due to the more efficient heat dissipation.     

Intensity dynamics in a waveguide array laser

We consider experimentally and theoretically the optical field dynamics of a five-emitter laser array subject to a ramped injection current. We have achieved experimentally an array that produces a robust oscillatory power output with a nearly constant π phase shift between the oscillations from each waveguide. The output power also decreases linearly as a function of waveguide number. Those behaviors persisted for pump currents varying between 380 and 500 mA with only a slight change in phase. Of note is the fact that the fundamental frequency of oscillation increases with injection current, and higher harmonics are produced above a threshold current of approximately 380 mA. Experimental observations and theoretical predictions are in agreement. A low dimensional model was also developed and the impact of the nonuniform injection current studied. A nonuniform injection current is capable of shifting the bifurcations of the waveguide array providing a valuable method of array tuning without additional gain or structural alterations to the array.     

Adaptive upstream optical power adjustment depending on required power budget in PON access

According to the present passive optical network (PON) standard, the fiber transmission lengths are from 500 m to 20 km between the optical line terminal (OLT) and different optical network units (ONUs). It will result in difference power losses (ΔP_loss) from 4 to 5 dB. Hence, we propose to adjust adaptively the output optical power of the upstream laser diode (LD) depending on the different fiber lengths. With the different fiber transmission lengths, we can properly adjust the bias current and modulation index of upstream LD for energy-saving. We characterize and analyze experimentally the relationship of output optical power and modulation amplitude Vamp under different fiber transmissions in PON access. Moreover, due to the adaptive power control of upstream signal, the optical upstream equalization also can be retrieved with power variation of 1.1 dB in this experiment.     

Recent developments in laser-diode interferometry

Laser-diode (LD) interferometry based on heterodyne techniques is described. The developments covered include: sinusoidal phase- modulating, distance-measuring feedback and phase-shifting interferometry. The wavelength is controlled by the laser injection current and is continuously or stepwise changed to introduce a time-varying phase difference between the two beams of an interferometer with unbalanced optical path lengths. A feedback interferometer is described with electronics to stabilize the phase shift and to lock the interferometer on a preset phase condition by controlling the injection current of the LD. An automated phase-measuring interferometric system is developed in which the laser current is changed to synchronize intensity data acquisition with the clocks of a charge-coupled device. A typical experimental result shows measurements of the profile of a diamond- turned Al surface.     

Effects of quantum confined stark effect and well thickness on optical properties of double quantum wells violet InGaN laser diodes

The effects of quantum confined stark effect (QCSE) and quantum well (QW) thickness on the optical properties of violet InGaN laser diodes (LDs) have numerically been investigated. The simulation results indicated that the QCSE greatly effects the optical properties of LDs, where QCSE relates to the QW thickness and it increases when the QW thickness is wider which leads to deteriorating of the optical proprieties of the violet InGaN LD. The polarization in the active region of the InGaN LD has been estimated by the blue shift of the wavelength and it is found that the blue shift of the wavelength depends on the QW thickness. The major simulation result has shown that the best properties of violet InGaN LD can be obtained with smaller QW thickness, where more carriers can be restricted, stayed and overlapped inside the QW which leads to a larger stimulated recombination rate and optical material gain which in turn increase the output power of the LD; while decreasing the threshold current of the LD.     

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

The upper waveguide(UWG) has direct influences on the optical and electrical characteristics of the violet laser diode(LD) by changing the optical field distribution or barrier of the electron blocking layer(EBL). In this study, a series of In GaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power(OLP) under an injecting current of 120 mA or the threshold current(Ith) is deteriorated when the UWG is u-In_(0.02)Ga_(0.98)N/GaN or u-In_(0.02)Ga_(0.98)N/Al_xGa_(1-x)N(0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor(OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In_(0.02)Ga_(0.98)N/GaN/Al_(0.05)Ga_(0.95)N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally,the output light power under an injecting current of 120 mA is improved to 176.4 mW.     

Optimization of optical wireless power transfer using near-infrared laser diodes

We experimentally demonstrated optical wireless power transfer(OWPT) using a near-infrared laser diode(LD)as the optical power transmitter.We considered a photovoltaic(PV) cell and a photodiode(PD) as the optical power receivers.We investigated the characteristics of the LD,PD,and PV cell in order to determine the optimum operating condition from the viewpoint of transfer efficiency.We also experimentally demonstrated a whole system optimization process to maximize the DC-to-DC transfer efficiency of the OWPT.Our experimental results showed that the optimization process can improve the OWPT efficiency by up to 48%.     

各向异性光反馈注入的垂直表面发射激光器的矢量偏振模转换机理

数值研究了各向异性光反馈注入的垂直表面发射激光器(VCSEL)的矢量偏振模转换机理,研究结果表明,首先,当注入电流接近阈值电流时,由VCSEL的外部参数和偏振器控制的光反馈注入量中各偏振模的能量决定VCSEL 输出的偏振态.其次,由偏振器控制的各向异性光反馈注入引起的VCSEL输出偏振态呈周期性变化.另外,当由偏振器控制的反馈注入量中的x^偏振和y^偏振模能量相当时, x^偏振模和y^偏振模之间竞争激烈,而激光器外部微小的扰动都会打破这两种偏振模竞争 关键词： 各向异性光反馈 垂直表面发射激光器 矢量偏振模     

模拟大气风场及其数据处理技术的研究

热层大气风速的测量可以采用干涉法来进行,由于光源（气辉辐射谱线）的强度很弱,故干涉法对测量系统要求很高。利用半导体激光器（LD）的调制特性和法布里-帕罗干涉仪(FPI)的高光谱分辨能力设计了一种用简单设备进行大气风场模拟与测量的方法。改变LD的驱动电流使其输出激光频率改变,从而模拟气辉辐射的多普勒频移,通过分析FPI获得的干涉图可检测出该频移,进而得到等效风速。模拟风速的相对误差不超过6.5%,最小模拟风速为20.01m/s,且测量结果与LD的线性调制特性很相符。使用该方法可以有效地对多普勒风速测量原理、数据处理方法、系统性能以及测量误差进行分析和评估。     

注入电流对绿光高压LED光电特性的影响

设计并制备了12 V 的GaN基绿光高压发光二极管（LED）,并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50 mA,测试温度为25 ℃。实验结果表明：电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对 GaN基绿光高压 LED 的改进优化具有一定的参考价值。     

High-power pulsed-current-mode operation of an overdriven tapered amplifier

We experimentally investigate the performance of a commercial tapered amplifier diode operating in a pulsed-current mode with a peak current that is significantly higher than the specified maximum continuous current. For a tapered amplifier rated at 500 mW of continuous power, we demonstrate 2.6 W of peak optical output power with 15 mW of injection light for 200 micros, 7 A current pulses. Different failure mechanisms for the tapered amplifier, including thermal and optical damage, are identified under these conditions.     

Relaxation Oscillation Enhancement and Coherence Collapse in Semiconductor Lasers with Optical Feedback

The dynamic characteristics of a semiconductor laser with optical feedback are strongly dependent on the injection current and the reflectivity and position of the external feedback reflector. We investigated the relaxation oscillation enhancement and coherence collapse state of the laser oscillation based on the laser rate equations. It is well known that laser output power jumps with increase of the injection current due to external mode transition. But here for the first we time demonstrate the existence of a chaotic scenario within successive laser power jumps. The results calculated by numerical simulations based on the rate equations are compared with those of the experiments and good coincidence between them is found.     

带有非吸收窗口的高性能InGaAs/AlGaAs量子阱激光二极管

为了解决限制近红外单发射区InGaAs/AlGaAs量子阱半导体激光二极管失效阈值功率提升的腔面光学灾变损伤问题,研制了一种带有Si杂质诱导量子阱混杂非吸收窗口的新型激光二极管,并对其性能进行了测试分析.首先,对于带有非吸收窗口的二极管,在其谐振腔上方前后腔面附近的窗口区域覆盖50 nm Si/100 nm SiO2组...     

885nmLD高重频侧泵Nd：YAG全固态激光器输出特性研究

对不同反射率和注入电流下885nmLD高重频侧面泵浦Nd：YAG全固态激光器的输出特性进行了实验研究，实验表明1064nm激光脉冲输出能量随注入电流的增加而增大，泵浦频率越高，脉冲输出能量增长越慢。以脉冲侧面泵浦Nd：YAG，在重复频率为60Hz、80Hz，注入电流为130A时，得到了输出透镜的最佳反射率都为73％，输出脉冲能量分别为62.1mJ，47.9mJ，光-光效率分别为13.29%、10.29%。     

Experimental demonstration of underwater optical wireless power transfer using a laser diode

We experimentally demonstrate an underwater optical wireless power transfer(OWPT) using a laser diode(LD)as a power transmitter. We investigate the characteristics of a solar cell and a photodiode(PD) as a power receiver. We optimize the LD, the PD, and the solar cell to achieve the maximum transfer efficiency. The maximum transfer efficiency of the back-to-back OWPT is measured as 4.3% with the PD receiver. Subsequently, we demonstrate the OWPT in tap and sea water. Our result shows an attenuation of 3 dB/m in sea water.     

大电流恒功率放电技术在大功率DPL中的应用

针对大功率激光二极管泵浦固体激光器(DPL)对大功率驱动电源的特殊要求,设计了一种大电流恒功率放电及驱动控制电路。将该电路与现有的充电和过流保护电路组成一套完整的激光二极管阵列驱动电源,并应用于基于大功率激光二极管阵列的DPL系统中。该驱动电源可为DPL系统提供频率为20 Hz,脉冲宽度为230 s,200 A以上的驱动电流,这将对多种以DPL为基础的激光武器系统产生重要的实际应用价值。