石墨烯-硅基混合光子集成电路

近年来硅基光子学已经慢慢走向成熟,它被认为是未来取代电子集成电路,实现下一代更高性能的光子集成电路的关键技术.这得益于硅基光子器件与现代的互补金属氧化物半导体工艺相兼容,能够实现廉价的大规模集成.然而,由于受硅材料本身的光电特性所限,在硅基平台上实现高性能的有源器件仍然存在着巨大挑战.石墨烯-硅基混合光子集成电路的发展为解决这一问题提供了可行的方案.这得益于石墨烯作为一种兼具高载流子迁移率、高电光系数和宽带吸收等优点的二维光电材料,能够方便地与现有硅基器件相集成,并充分发挥自身的光电性能优势.本文结合我们课题组在该领域研究的一些最新成果,介绍了国际上在石墨烯-硅基混合光子集成电路上的一些重要研究进展,涵盖了光源、光波导、光调制器和光探测器四个重要组成部分.     

硅基底石墨烯器件的现状及发展趋势

石墨烯是一种由单层碳原子紧密排列而形成的具有蜂窝状结构的二维晶体材料,特殊的结构赋予了其优异的性能,如高载流子迁移率、电导率、热导率、力学强度以及量子反常霍尔效应.由于石墨烯优异的特性,迅速激起了人们对石墨烯研究以及应用的热情.石墨烯沉积或转移到硅片后,其器件构建与集成和传统硅基半导体工艺兼容.基于石墨烯的硅基器件与硅基器件的有机结合,可以大幅度提高半导体器件的综合性能.随着石墨烯制备工艺和转移技术的优化,硅基底石墨烯器件将呈现出潜在的、巨大的实际应用价值.随着器件尺寸的纳米化,器件的发热、能耗等问题成为硅基器件与集成发展面临的瓶颈问题,石墨烯的出现为解决这些问题提供了一种可能的解决方案.本文综述了石墨烯作为场效应晶体管研究的进展,为解决石墨烯带隙为零、影响器件开关比的问题,采用了量子限域法、化学掺杂法、外加电场调节法和引入应力法.在光电器件研究方面,石墨烯可以均匀吸收所有频率的光,其光电性能也受到了广泛的关注,如光电探测器、光电调制器、太阳能电池等.同时,石墨烯作为典型的二维材料,其优越的电学性能以及超高的比表面积,使其作为高灵敏度传感器的研究成为纳米科学研究的前沿和热点领域.     

硅基光波导化学传感器研究

研究了基于硅基集成光波导的马赫-曾德干涉仪(MZI)型化学传感芯片的设计、制备及相关敏感特性的模拟和分析.传感芯片采用硅基二氧化硅光波导材料,利用与传统互补型金属氧化物半导体(CMOS)兼容的工艺技术制作.通过波导的单模设计以及对MZI结构的优化,获得了有效折射率分辨率达到10-7量级的高灵敏度传感芯片.作为化学传感器,把MZI的其中一臂设计成传感臂.并进行适当的表面修饰,可制作出高灵敏度的干涉型光波导化学传感器.最后,对该传感器的折射率分辨率、敏感特性等进行了分析、模拟,同时,对面临的关键问题进行了分析和讨论.     

用于生物传感的相位调制的铝膜-石墨烯结构

为了提高铝基等离子体传感器的灵敏度和稳定性,提出了一种基于相位调制增敏的表面等离子体共振传感结构:铝膜-石墨烯复合结构.采用Kretschmann传感结构,将铝膜和多层石墨烯依次沉积在高折射率棱镜上.基于传输矩阵原理,模拟计算激发光波长为632.8 nm时,几何结构参数对传感性能的变化规律.研究结果表明,相比于传统的角度调制模式,该传感结构采用相位调制模式,可以实现2个数量级的灵敏度增强.同时,石墨烯薄层的引入不仅能够有效阻止等离子体铝膜被氧化,而且能够产生近83倍的探测灵敏度增强因子.对于界面折射率变化为1.333～1.334 2 RIU,该复合结构的最大差分相位为94.663o,能够产生超高的相位探测灵敏度7.888 5×104 o/RIU.该传感结构可为开发低成本、超灵敏的铝基等离子体传感器件提供参考.     

位移传感器演示装置的制作

通过自制的位移传感器演示装置可以对霍尔磁阻效应、 一种小位移测量传感器原理和方法进行演示和 探究. 在课堂教学、 课程设计等场合,直观显示霍尔元件的各种效应和技术应用, 有着良好的教学效果     

室温下石墨烯的霍尔效应实验研究

对用化学气相沉积法(CVD)研制的长、宽均为1.23 cm,厚度为3个原子层尺寸的石墨烯样品,进行了室温下的霍尔效应相关研究。实验中电极与石墨烯之间有良好的欧姆接触。通过范德堡法测量了样品在磁场强度为0.353 T,不同电流强度下的霍尔电压,并对结果进行处理分析,得到石墨烯的霍尔系数RH=7.00×10-7m3/C、载流子浓度n=10.52×1024/m3、霍尔元件乘积灵敏度KH=6.87×102m2/C。     

石墨烯谐振式力学量传感器研究进展

传统谐振式传感器的谐振敏感元件大多采用金属、石英晶体、硅等材料制成,但随着谐振式传感器朝着小型化、微型化、实用化的趋势发展,不但要求新型谐振子材料可进行微纳加工,还对其灵敏度和精度提出了更高的要求.石墨烯这种新型二维纳米材料,因具有出色的力学、电学、光学、热学特性,在谐振传感领域有着巨大的应用潜力和研究价值,因此基于石墨烯材料的力学量传感器有望在小型化、高性能和环境适应性等多方面超越硅基力学量传感器.本文针对石墨烯谐振式力学量传感器,介绍了石墨烯材料的基本性质、制备与转移方法,阐述了谐振式传感器的工作原理与应用特点,进而分析了关于石墨烯谐振特性优化与谐振器制备的理论与实验研究;在此基础上,重点总结了石墨烯谐振器在压力、加速度、质量等传感器领域的研究进展,梳理了石墨烯谐振式力学量传感器在薄膜转移、结构制备与激振/拾振等方面的技术问题,同时也明确了石墨烯在谐振传感领域的研究价值和发展潜力.     

霍尔式传感器的不等位电势补偿探讨

不等位电势是霍尔式传感器产生零位误差的主要因素.在霍尔式传感器的直流激励特性实验中霍尔元件处于梯度磁场中,但是磁场强度未知,因此无法确定磁场强度为零的位置.当采用交流激励时,通过调节霍尔元件在磁场中的位置,使输出的最小电势便是不等位电势,此时便可通过补偿桥路进行补偿.     

新型霍尔元件物理特性实验装置的制作

设计并制作了一套新型实验装置,通过线性和开关型霍尔元件特性测试的巧妙组合,得到开关型霍尔元件开关磁感应强度的大小及其磁滞回特性曲线.该实验装置可帮助学生加深对霍尔元件物理特性的认识.     

基于霍尔传感器阵列的孔板流量计测流量实验

利用集成霍尔传感器阵列测量水银压力差,并将其应用在传统的孔板流量计中.通过采集卡及LabVIEW编程,实现了对液体流量的测量.     

Valley Hall effect and Nernst effect in strain engineered graphene

We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.     

Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure

Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8–200 K) at a static magnetic field (0.5 T). With the analysis of temperature dependent single-field Hall data with the Simple Parallel Conduction Extraction Method (SPCEM), bulk and two-dimensional (2D) carrier densities and mobilities were extracted successfully. Bulk carrier is attributed to SiC substrate and 2D carrier is attributed to the graphene layer. For each SPCEM extracted carrier data, relevant three-dimensional or 2D scattering analyses were performed. Each SPCEM extracted carrier data were explained with the related scattering analyses. A temperature independent mobility component, which may related to an interaction between graphene and SiC, was observed for both scattering analyses with the same mobility limiting value. With the SPCEM, effective ionized impurity concentration of SiC substrate, extracted 2D-mobility, and sheet carrier density of the graphene layer are calculated with using temperature dependent static magnetic field Hall data.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Magnetotransport properties of graphene layers decorated with colloid quantum dots

The hybrid graphene-quantum dot devices can potentially be used to tailor the electronic, optical, and chemical properties of graphene. Here, the low temperature electronic transport properties of bilayer graphene decorated with PbS colloid quantum dots(CQDs) have been investigated in the weak or strong magnetic fields. The presence of the CQDs introduces additional scattering potentials that alter the magnetotransport properties of the graphene layers, leading to the observation of a new set of magnetoconductance oscillations near zero magnetic field as well as the high-field quantum Hall regime.The results bring about a new strategy for exploring the quantum interference effects in two-dimensional materials which are sensitive to the surrounding electrostatic environment, and open up a new gateway for exploring the graphene sensing with quantum interference effects.     

Electric- and magnetic-field-tuned Landau levels and Hall conductivity in AA-stacked bilayer graphene

We theoretically study the combined effect of magnetic and electric fields on the Landau levels and Hall conductivity in AA-stacked bilayer graphene. From the analytic expressions derived, we obtain explicit criterions for determining the zero-energy Landau level and different level crossings in the graphene bilayer. For providing a scheme of experimental verification, we further explore the quantum Hall effect in such a biased bilayer. It is found that the zero-conductance Hall plateau in this system can vanish at certain specific combinations of magnetic and electric fields, accompanying with the occurrence of resonance Hall conductivity steps.     

Fast Car Physics,by Chuck Edmondson

An introduction to the theory of modular symmetries in two-dimensional materials, and its application to ‘relativistic’ group IV materials like graphene, silicene, germanene and stanene, is given. Universal properties of the magneto-electric Hall effect are extracted by projecting experimental transport data directly onto the phase diagram. When families of data depending on the dominant scale parameter (usually temperature) are available, we can extract flow lines that chart the geometry of the phase diagram, including the location of quantum critical points and phase boundaries connecting these. The universal data are used to identify emergent modular symmetries, which are infinite discrete groups of fractional linear (Möbius) transformations. Such symmetries are extremely rigid, and therefore spawn a host of sharp predictions that are easy to falsify, but so far they have failed to fail. The unique topology of the Fermi surface in the graphene family gives a robust gapless mode with linear dispersion (relativistic Dirac cones) that shifts the spectrum of Landau levels that appear when the material is placed in a strong magnetic field. The modular analysis can be extended to this case, and where reliable data are available, there appears to be agreement. A convincing case for the ‘relativistic’ quantum Hall group is hampered by the paucity of fractional quantum Hall data, the absence of scaling data and the crossover between different scaling regimes. This is likely to change in the near future, as scaling data for graphene are just now becoming available.     

A Promising Mechanism for Photonic Spin Hall Effect and Refractive Index Sensing: Surface Exciton Polaritons

Surface polaritons are surface electromagnetic waves propagating along the surface of a medium, which play an important role in enhancing the photonic spin Hall effect (SHE). Among them, the successful excitation of surface exciton polaritons (SEPs) often requires cryogenic temperature, which limits their practical applications. In this contribution, a promising mechanism is presented for enhancing the photonic SHE by taking advantage of room-temperature SEPs in a prism-glass-TDBC-air configuration. By depositing the TDBC layer on plasmon active metal, the hybrid polariton, namely, surface plasmon exciton polariton (SPEP) can be observed, which gives rise to the further enhancement of photonic SHE. Furthermore, a refractive index sensor based on SEP (or SPEP) enhanced photonic SHE is proposed with the superior sensing performance. The results pave the way for the realization of giant photonic SHE in this simple and promising method, and offer the opportunity for developing highly sensitive optical sensors.     

Temperature dependent electron transport in graphene

We have investigated the electron transport in graphene at different carrier densities. Single layer graphene was fabricated into Hall bar shaped devices by mechanical extraction onto a silicon oxide/silicon substrate followed by standard microfabrication techniques. From magnetoresistance and Hall measurements, we measure the carrier density and mobility at different gate voltages. Different temperature dependent resistivity behaviors are found in samples with high and low mobilities.     

Measurement of the ν=1/3 fractional quantum hall energy gap in suspended graphene

We report on magnetotransport measurements of multiterminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transverse resistance plateaus are seen corresponding to fractional quantum Hall states, most strongly for ν=1/3. By measuring the temperature dependence of these resistance minima, the energy gap for the 1/3 fractional state in graphene is determined to be at ～20 K at 14 T.