钕离子掺杂和钕铝共掺高硅氧玻璃的光谱性质研究

基于多孔玻璃烧结的方法制备了钕离子掺杂和钕铝共掺高硅氧玻璃，测量了掺钕高硅氧玻璃的吸收光谱、荧光光谱和荧光寿命. 利用Judd-Ofelt理论计算得到了钕离子在高硅氧玻璃中的强度参数，计算并对比了掺钕高硅氧玻璃和钕铝共掺高硅氧玻璃的理论荧光寿命、受激发射截面和发光量子效率.讨论了钕铝共掺高硅氧玻璃中铝离子的掺入对玻璃发光性质的影响. 通过与其他掺钕氧化物玻璃和一些商用硅酸盐玻璃的主要光谱性质的比较，掺钕高硅氧玻璃显示了较好的光谱性质，有可能成为一种应用于高能和高频激光领域的新型激光材料. 关键词： 掺钕高硅氧玻璃 钕铝共掺 光谱性质 Judd-Ofelt理论     

离子注入对多孔硅可见光发射特性的影响

本文在前期对多孔硅发光机理研究的基础上,研究了离子注入对多孔硅光致发光的影响.实验表明离子注入除了可以降低多孔硅光致发光的强度外,还将使多孔硅的光致发光光谱谱峰产生蓝移、半高宽展宽,并在多孔硅发光谱带中产生一些发光减弱区和次峰结构.文中最后对实验现象做了解释.     

铜掺杂多孔硅的光致荧光猝灭

采用浸泡镀敷的方法在多孔硅表面形成了一铜镀层,通过对掺铜前后多孔硅的光致发光(PL)谱和傅里叶变换红外(FTIR)吸收光谱的研究,讨论了铜在多孔硅表面的吸附对其光致发光的影响。实验表明,掺铜对多孔硅的光致发光具有明显的猝灭效应,并使多孔硅的发光峰位蓝移。由于多孔硅表面铜的吸附使硅-氢键明显减少,而铜原子和硅的悬挂键成键会形成新的非辐射复合中心,从而使多孔硅的光致发光强度衰减。且浸泡溶液的浓度越高,这种猝灭效应越明显。而多孔硅发光峰位的蓝移,则是由于在发生金属淀积的同时伴随着多孔硅表面Si的氧化过程(纳米Si氧化为SiO2)的缘故。     

稀土掺杂硅基薄膜的高效发光特性

测量了在不同离子注入剂量,不同退火条件下的Nd注入Si基晶片室温光致发光谱,结果表明它们均具有蓝、紫发光峰,且发光稳定。在一定范围内发光效率随掺杂浓度的增加而增大,随退火条件的不同而改变。在实验室条件下,对掺杂硅片和单晶硅片进行电化学腐蚀制成多孔硅样片,同时用适当配比的HNO3对以单晶硅为基底的多孔硅进行处理,测试了腐蚀后各类样品的光致发光（PL）谱。发现掺稀土Nd的多孔硅和用HNO3处理的多孔硅的发光效率有显著提高。     

多孔硅的光致发光机制

人们已经提出了许多解释多孔硅发光的理论模型,每个模型都可以针对某些实验现象做出合理的解释,而对其他的实验结果就可能无法解释甚至相悖,因此多孔硅的发光机制至今仍是需要进一步研究和解决的问题。通过改变阳极氧化的条件,制得了一系列样品,其光致发光谱主要有四个峰。随着制备条件的改变,各个峰位的变化不大,但峰值强度比的变化比较大。随着自然氧化时间的延长,各个峰位的变化很小,有红移也有蓝移,有的则基本不变;而峰值强度的减弱幅度较大,但对应于各个峰位幅度的减弱是均衡的。分析实验现象产生的原因,认为多孔硅的发光是多种发光机制共同作用的结果;多孔硅纳米量子线的一定尺寸分布,不仅使光致发光谱存在一定的带宽,而且也是产生多峰现象的原因之一;多孔硅的结构特征对其发光特性起着决定性的作用。     

GaP中1.71eV发光带的研究

本文研究了GaP中普遍出现的1.71eV光致发光(PL)宽带。这是一个与多个杂质能级有关的发光带,由吸收谱和光致发光激发谱(PLE)检测到在价带上方0.37—0.089eV范围内与该发光带有关的深能级。时间分辨谱测量表明。随着衰减过程的延续,谱峰移向低能方向,说明该带起源于D—A对复合。讨论了该发光带与背景Cu杂质有关的可能性及其发光机制和激发途径。     

掺铒硅多孔化后的光致发光特性

采用一种新的方法制备掺Er多孔硅.首先通过分子束外延法生长Er,O共掺的硅外延层,然后通过常规的电化学阳极腐蚀法将外延层制备成掺Er离子的纳米硅柱结构.由于实现了Er离子在多孔硅中沿深度方向的均匀分布,得到峰宽仅6nm的Er3+本征发光.同时,由于铒与氧共掺于硅柱内部,多孔硅不再需要通过高温后处理引入氧来实现铒的光学激活.实验还对多孔化前后,Er3+的发光强度作出直观的比较,讨论多孔硅可见光及红外光区域的发光对Er3+红外发射的影响. 关键词：     

GD a-Si:H主光致发光带的时间分辨研究

本文研究了低温淀积(例如T:<150℃)的GD a-Si:H在77K的时间分辨光致发光谱和荧光衰退。光致发光谱显示非对称形,荧光衰退显示出最初的快衰退,较长时间后为慢衰退。在快衰退范围内可用两个时间常数逐点分析时间分辨光谱,把主发光带分解为两个近似高斯形的发光带,对于Ts=127℃的薄膜,两发光带峰值位置在t=0时分别为1.73和1.58eV。快衰退两带的时间常数分别为10和23ns。文中还初步讨论了这两个发光带的起因。     

蓝光发射多孔硅RTO过程中的尺寸分离效应

对用水热腐蚀技术制备的、具有蓝光发射的多孔硅样品在快速热氧化(RTO)处理前后其光致发光谱、硅纳米颗粒的大小及尺寸分布变化进行了研究.实验发现,新鲜多孔硅样品经过RTO处理后,其光致发光谱整体蓝移并由单发光峰分裂为两个发光峰;与此对应,样品中的硅纳米颗粒在整体减小的同时出现尺寸分离现象.这一结果表明,多孔硅中的短波长发射也具有强烈的尺寸相关性. 关键词：     

老化产生的深能级对GaP纯绿发光二极管发光效率的影响

测量了GaP纯绿发光二极管老化前后的可见和近红外发光光谱,研究了老化产生的深能级的来源及其对二极管发光效率的影响.在老化后的发光光谱中观测到650nm和1260nm发光带,发现1260nm发光带的发光强度随老化时间的增加而增强.实验结果表明老化产生的与磷相关的深能级严重地影响了GaP纯绿LED的发光效率.     

Synthesis and optical characterization of Gd2O3:Eu nanocrystals: surface states and VUV excitation

This paper reports on the synthesis and characterization of Gd₂O₃:Eu³⁺ nanocrystals of different sizes. The particles have been synthesized by a sol-lyophilization process. This methods allows the synthesis of 7–100 nm diameter cubic-phase particles. The photoluminescence properties have been studied with different excitation from X-ray to VUV and visible wavelengths. Compared to the properties of the bulk materials, some important changes on the luminescence are observed. In particular some bands are strengthened when the size of the particles is diminished. We could therefore ascribe this bands to doping ions on a site close to the surface. Also a very low efficiency of excitation for small particles is observed when exciting with X-ray or high-energy VUV photons (i.e. when exciting the host matrix) compared to the efficiency obtained when exciting in the charge transfer band or in the doping ions related states.     

Pulsed cathodoluminescence of nanoscale aluminum oxide with different phase compositions

The methods of pulsed cathodoluminescence have been used to study compacted powders and ceramics containing different phases of aluminum oxide. An intensive luminescence of the samples under study in the visible, NIR, and UV regions of the spectrum has been found. The luminescence bands are very broad and include a few components. The number of the bands depends on the phase composition of the samples. The oxygen vacancies, which capture one or two electrons, produce luminescence centers in the near UV region. The most probable in the visible region is the luminescence of aggregate defects, impurities, and surface centers.     

Electronic excitations and optical response of metal nanocomposites under heavy ion implantation

The optical transmission and ion-induced luminescence under implantation of copper ions into quartz glass (a-SiO₂) have been measured to study the processes of formation of copper nanoparticles. It is shown that in situ measurements are more informative in comparison with the ordinary approach—investigation of the properties of ion-implanted nanocomposites only after implantation. A series of experiments was performed to prove that the ion-induced luminescence band at 545–550 nm is due to Cu⁺ ions dissolved in a-SiO₂. The combined use of in situ optical techniques makes it possible to monitor the states of implanted copper (metal nanoparticles and dissolved atoms) by the change in the optical absorption near the surface plasmon resonance of nanoparticles and by the intensity of ion-induced luminescence of Cu⁺ states in solid solution. It is shown that the optical bands of defects, dissolved copper, and nanoparticles can be separated within a simple linear approximation. Near the surface plasmon resonance and defect bands, ion-induced transient optical absorption has been revealed. The transient optical absorption near the surface plasmon resonance is explained by the temperature effect. The relationship between the electronic excitation, radiation-induced optical response, and the kinetics of nanoparticle formation is analyzed. Several stages of nanoparticle formation have been established: accumulation of implanted copper in solid solution, nucleation of nanoparticles, coalescence, growth of nanoparticles, and saturation of nanocomposites.     

Intense blue luminescence of anodic aluminum oxide

The luminescence spectra of aluminum oxide with an ordered system of through pores have been studied. The diameter and density of pores were ≈ 50 nm and 1.2 × 10¹⁰ cm^?2, respectively. Amorphous aluminum oxide formed by anodization of aluminum foil in an oxalic acid electrolyte shows intense luminescence in the blue spectral region. Processing of spectra with the use of an oxalic acid approximation by Gaussian curves gives three bands peaking at ～ 382 (3.2 eV), 461 (2.7 eV), and 500 nm (2.5 eV), which correspond to different types of defects. The bands at 382 and 461 nm can be assigned to optical transitions involving F⁺ and F centers (vacancies of oxygen with one or two electrons), respectively. The lower-energy band near 500 nm can be presumably assigned to luminescence from F⁺⁺ centers (vacancy of oxygen without an electron). Analysis of the luminescence excitation spectra has revealed an inhomogeneous character of the distribution of the corresponding luminescence centers in the Al₂O₃ matrix.     

The effect of temperature on the luminescence spectra of potassium-aluminum borate and silicate glasses with copper(I) and silver ions

Luminescence and luminescence-excitation spectra of potassium-aluminum borate glasses containing copper(I) and silver ions have been investigated in the temperature range of 20–300°C. It is shown that the luminescence thermochromic effect, which manifests itself in a blue spectral shift of the luminescence bands with an increase in temperature, occurs in glasses of all types, reaching a value of 100 nm. Heating leads to a red shift of luminescence-excitation bands by 20 nm and their broadening. Luminescence quenching occurs in glasses exhibiting photochromic effect at room temperature. An increase in temperature leads to weakening and, finally, disappearance of the photochromic effect in these glasses with subsequent occurrence of the luminescence thermochromic effect.     

近紫外荧光粉SrAl_2Si_2O_8∶Ce~(3+)的光致发光特性

采用高温固相反应法制备了xCe~(3+)(x=0.01%,0.05%,0.10%和0.30%)激活的Sr_(1-x)Al_2Si_2O_8近紫外荧光粉,利用X射线衍射(XRD)和扫描电镜(SEM)检测出荧光粉的物相结构,通过光致发光谱(PL)和激发光谱(PLE)表征了荧光粉的发光性质。结果显示,在中波紫外光激发下,发射峰位于长波紫外区,归属于Ce~(3+)的5d→2 F5/2和5d→2 F7/2跃迁。激发波长308nm时,观察到近紫外SrAl_2Si_2O_8荧光粉的发光强度随Ce~(3+)掺杂量增加而先增大后减小,同时发射峰位置红移。280和325nm波长选择性激发条件下的差异性发射行为表明SrAl_2Si_2O_8∶Ce~(3+)具有两种性质不同的发光中心,该结论由监测320和390nm发射时获得的形状具有明显区别的激发光谱亦可得以验证。离子半径的匹配性支持Ce~(3+)优先取代Sr~(2+),同时Van Uitert的经验公式估算结果推断出低浓度的Ce~(3+)生成九配位的Ce(Ⅰ)发光中心,高浓度掺杂情况下部分相互近邻的Ce~(3+)有效配位数减小,形成八配位的Ce(Ⅱ)发光中心。紫外280nm激发下峰位348nm的发射谱带源于Ce(Ⅰ)和Ce(Ⅱ)发光中心共同贡献,紫外325nm激发下发射峰位于378nm的发射带则主要对应于Ce(Ⅱ)发光中心。紫外光激发下Ce~(3+)发射出较强的近紫外光,表明SrAl_2Si_2O_8∶Ce~(3+)是一种适用于研发紫外荧光光源的荧光粉体材料。     

Some physical properties of In doped copper oxide films produced by ultrasonic spray pyrolysis

In this work, we have reported the effect of In doping on structural, optical and surface properties of copper oxide films obtained by a low-cost ultrasonic spray pyrolysis technique. Thicknesses, refractive indices and extinction coefficients of the films have been determined by Spectroscopic ellipsometry technique using Cauchy-Urbach model for fitting. A very good agreement was found between experimental and theoretical parameters with low MSE values. Transmission and reflectance spectra have been taken by UV Spectrophotometer, and band gap values have been determined by optical method. Structural properties of the films were investigated with X-ray diffraction patterns. In doping caused the films to growth through some certain directions. Atomic force microscope images have been taken to see the effect of In doping on surface topography and roughness of copper oxide films. Surface properties of undoped films have been improved by In doping. Lowest roughness values have been obtained for In doping at 1%. As a result, we have concluded that properties of copper oxide films which are commonly used in solar cells may have improved by In doping (especially In doped at 1%).     

Photoluminescence of PbFCl and PbFBr single crystals

The luminescence properties of single crystals of PbFCl and PbFBr at 4.2 K under ultraviolet irradiation are presented for the first time. In PbFCl three and in PbFBr four emission bands have been observed. The red bands are ascribed to Pb⁺ centres. Direct exciton recombination is absent in both compounds.     

Luminescence properties of spark-processed Si in air, O2, and N2 with low pressure

This paper reports the luminescence properties of spark-processed Si (sp-Si) prepared with different atmospheres such as air, O₂, and N₂ in low vacuum range (50-760 Torr). Three main luminescence bands are observed from spark-processed Si (sp-Si). In addition to the well-known two luminescence bands in the blue/violet peaking at 410 nm and green peaking at 500 nm, a novel UV luminescence band is detected for the sp-Si prepared in N₂. The temperature dependence of photoluminescence (PL) characteristics of the newly detected UV luminescence band is examined. Further studies of photoluminescence excitation (PLE) have been performed and origins of luminescence are discussed based on the experimental results.     

Luminescence properties of MgO produced by solution combustion synthesis and doped with lanthanides and Li

The objective of this study is to explore the possibility of synthesizing MgO with controlled luminescence and thermoluminescence (TL) properties using the Solution Combustion Synthesis (SCS) method by doping with different lanthanides (Ln) and co-doping with lithium (Li). The goal is to further establish the SCS technique as a new route for developing new TL and optically stimulated luminescence (OSL) dosimetric materials. Undoped and doped MgO samples were synthesized by SCS and characterized using radioluminescence (RL) and TL. The data obtained showed that Li doping can increase considerably the intensity of the RL and TL from Ln-doped MgO produced by SCS. In MgO:Ln,Li the introduced lanthanides are responsible for the emission during both RL and TL processes, although other emission bands are also observed (e.g., ∼700-750 nm). The incorporation of lanthanides also introduces trapping centers as indicated by different peaks in the TL curves. The results in this study show that the SCS technique can potentially produce materials with TL intensity comparable to commercial dosimetric materials, although further optimizations are still required.