多晶体二次电子的角度分布

 根据二次电子发射的主要物理过程,推导了内二次电子到达多晶表面并逸出的几率的角度分布、斜射入多晶的高能原电子产生的二次电子的角度分布和由背散射电子产生的二次电子的角度分布。同时,推导了高能原电子轰击多晶产生的二次电子的角度分布公式,该公式表明多晶的二次电子遵循余弦分布,且与原电子的入射角无关。分析结果表明: 在内二次电子最大逸出深度范围内,如果由射入多晶的原电子和背散射电子产生的内二次电子数是常数, 则多晶的二次电子的角度分布遵循余弦分布;如果由射入多晶的原电子和背散射电子产生的内二次电子数越来越少,则多晶的二次电子发射角度分布随出射角减少得比出射角的余弦值更慢;如果由射入多晶的原电子和背散射电子产生的内二次电子越来越多,则多晶的二次电子发射角度分布随出射角减少得比出射角的余弦值更快。     

Numerical study on discharge characteristics influenced by secondary electron emission in capacitive RF argon glow discharges by fluid modeling

A one-dimensional(1D) fluid model of capacitive RF argon glow discharges between two parallel-plate electrodes at low pressure is employed. The influence of the secondary electron emission on the plasma characteristics in the discharges is investigated numerically by the model. The results show that as the secondary electron emission coefficient increases,the cycle-averaged electric field has almost no change; the cycle-averaged electron temperature in the bulk plasma almost does not change, but it increases in the two sheath regions; the cycle-averaged ionization rate, electron density, electron current density, ion current density, and total current density all increase. Also, the cycle-averaged secondary electron fluxes on the surfaces of the electrodes increase as the secondary electron emission coefficient increases. The evolutions of the electron flux, the secondary electron flux and the ion flux on the powered electrode increase as the secondary electron emission coefficient increases. The cycle-averaged electron pressure heating, electron Ohmic heating, electron heating, and ion heating in the two sheath regions increase as the secondary electron emission coefficient increases. The cycle-averaged electron energy loss increases with increasing secondary electron emission coefficient.     

高入射能量下的金属二次电子发射模型

基于高入射能量电子产生二次电子发射的物理过程, 分别对高入射能量电子产生的真二次电子和背散射电子的概率进行理论分析与建模. 利用Bethe能量损失模型和内二次电子逸出概率分布, 推导出高入射能量电子产生有效真二次电子发射的系数与入射能量的关系式; 根据高入射能量电子在材料内部被吸收的规律, 推导出高入射能量电子产生背散射电子的系数与入射能量之间的关系式. 结合两者得到高入射能量下金属的二次电子发射模型. 利用该模型计算得到典型金属材料Au, Ag, Cu, Al的二次电子发射系数, 理论计算结果与采用Casino软件模拟金属内部散射过程得到的数值模拟结果相符. 关键词： 二次电子发射 高入射能量 金属表面 散射过程     

HIRFL-CSR电子冷却系统空心电子束性能研究

 电子冷却系统中冷却力的大小与电子束的温度密切相关。由于强流电子束自身产生的空间电荷场,使得电子束的速度离散,增加了电子束温度,降低了冷却效率。为了减小空间电荷效应,HIRFL CSR的电子冷却系统将首次采用空心电子束对储存环中的重离子束流进行冷却。通过分析实心电子束和空心电子束的空间电荷场,研究了其对电子束速度和温度的影响。     

金属的高能二次电子发射系数与入射能量和能量幂次的关系

 根据原电子射程表达式和金属的有效真二次电子发射系数表达式,推导出金属的高能有效真二次电子发射系数与入射能量、能量幂次的关系式;并根据金属的高能有效真二次电子发射系数与金属的高能二次电子发射系数的关系,推导出金属的高能二次电子发射系数与入射能量、能量幂次的关系式。用实验数据计算出高能原电子轰击在金或银上时原电子入射能量幂次n,采用实验数据证实高能二次电子发射系数与原电子入射能量和能量幂次三者的关系,对结果进行讨论并得出结论：当高能原电子轰击在同一块金属上时,高能二次电子发射系数与原电子入射能量的n-1次幂之积近似为一常数。     

Experimental study on helium optical electron polarimetry

Optical electron polarimetry is suitable for calibration of a spin-polarized electron source, especially for measurement of polarization of spin-polarized electron beam. In this paper, a new optical electron polarimeter is described, which is based on the circularly polarized He radiation induced by the bombarding of He atoms with spin-polarized electrons. The theoretical basis of the optical electron polarimetry and the structure of the optical electron polarimeter are discussed. The measurement of polarization of spin-polarized electrons produced from a new GaAs （100） spin-polarized electron source is carried out. The result of polarization of 30.8% for our spin-polarized electron source is obtained using the He optical electron polarimeter.     

The tube character of electron drift in condensed inert gases

The behavior of an excess electron in condensed inert gases in an external electric field is considered at densities and temperatures at which the mobility of a slow electron is relatively high. On the basis of experimental data and a model of a pair electron interaction with atoms, an effective potential energy surface is constructed for an excess electron inside a dense inert gas. The region available for a slow electron consists of many intersecting channels that form a Delaunay network located between atoms. A drifting electron, as a quantum object, propagates along these channels (tubes), and electron transition between intersecting potential energy tubes of different directions provides an effective electron scattering. This mechanism of electron drift and scattering differs from that in gases and crystals. Peculiarities of electron drift inside dense inert gases are analyzed within the framework of this mechanism of electron scattering, leading to a moderate change of the electron mobility upon melting.     

超短电子脉冲在聚焦强激光场中的三维有质动力散射

采用三维测试粒子模拟(test-padicle simulation)的方法，研究了聚焦的飞秒脉冲强激光与超短电子束进行有质动力的散射过程.详细讨论了超短电子束经过不同激光延迟下有质动力散射的空间分布特征和能谱特征.提出了通过测量电子束的空间分布和能谱分布实现对超短脉冲电子束的脉冲宽度测量的方法. 关键词： 有质动力散射 聚焦的飞激光 飞秒电子束     

Microscopic analysis of surface state of SUS-304L stainless steel by low energy scanning electron microscopy in ultra high vacuum

The variation of surface state of SUS-304L stainless steel with heat treatment in a vacuum of 10^?9 Torr was observed by the ultra high vacuum low energy scanning electron microscope (UHVLESEM) by detecting the absorption electron current. The absorption electron current was very sensitive to the surface state and a large effect of the electron beam irradiation was observed. The variation of the absorption electron current with the surface segregation was measured within a microscopical dimension of 0.3 microm on a selected area of the scanning electron microscopic image. At the same time, the surface state was characterized by Auger electron spectroscopy and relations between surface states and the absorption electron current were discussed in relation to the secondary electron and backscattered electron yields.     

Measurement of electron density distribution in the probe of a low voltage SEM

A method for measuring the electron density distribution in the probe of a low voltage scanning electron microscope is described. It is shown that the focused electron probe of an S 4800 scanning electron microscope at the electron energy of 200 eV has a Gaussian shape of the electron density with the effective diameter of the probe of 20 nm.     

Electron dynamics and harmonics radiation due to electron oscillation driven by laser standing wave

The electron dynamics and harmonics radiation spectra due to electron oscillation driven by laser standing wave (SW) have been investigated considering a single electron mode. It is found that electron can pass through or be reflected from laser SW as electron is shot into laser SW from antinodes plane with initial velocity parallel to electric field of SW, and for electron incidence at arbitrary plane the attraction plane of electron trajectories will transfer from nodes plane to antinodes plane if initial electron kinetic energy exceeds a critical value. Further, the harmonics emission due to electron oscillation during passing through laser SW is considered in two cases of electron incidence plane at nodes and antinodes. In case of electron incidence at nodes, the spectrum of radiation is redshifted for backward radiation and blueshifted for forward radiation, and broadening of spectrum is noticed. These effects are much more pronounced at higher laser intensities. However, for case with electron incidence at antinodes, these phenomena vanish.     

Ka波段同轴多注相对论速调管的电子束引入

首先通过理论分析确定影响多注电子束引入效率的主要因素,确定初步的结构参数;其次利用三维粒子模拟软件建立Ka波段相对论多注二极管模型进行仿真优化,使电子束引入效率达到89%;并开展了电子束的产生与传输实验研究,验证了粒子模拟仿真结果。在电子束电压502 kV、束流4.34 kA、轴向磁感应强度0.76 T的条件下,电子束引入效率达到了72%,由电子束轰击尼龙靶材获得的电子束束斑图表明,电子束在产生与传输过程中形状未发生畸变,产生的电子束直径约为2 mm。模拟和实验研究验证了设计的强流多注二极管可以产生高品质的电子束和实现高效率的电子束引入。     

Characteristics of secondary electron emission from few layer graphene on silicon (111) surface

As a typical two-dimensional (2D) coating material, graphene has been utilized to effectively reduce secondary electron emission from the surface. Nevertheless, the microscopic mechanism and the dominant factor of secondary electron emission suppression remain controversial. Since traditional models rely on the data of experimental bulk properties which are scarcely appropriate to the 2D coating situation, this paper presents the first-principles-based numerical calculations of the electron interaction and emission process for monolayer and multilayer graphene on silicon (111) substrate. By using the anisotropic energy loss for the coating graphene, the electron transport process can be described more realistically. The real physical electron interactions, including the elastic scattering of electron—nucleus, inelastic scattering of the electron—extranuclear electron, and electron—phonon effect, are considered and calculated by using the Monte Carlo method. The energy level transition theory-based first-principles method and the full Penn algorithm are used to calculate the energy loss function during the inelastic scattering. Variations of the energy loss function and interface electron density differences for 1 to 4 layer graphene coating GoSi are calculated, and their inner electron distributions and secondary electron emissions are analyzed. Simulation results demonstrate that the dominant factor of the inhibiting of secondary electron yield (SEY) of GoSi is to induce the deeper electrons in the internal scattering process. In contrast, a low surface potential barrier due to the positive deviation of electron density difference at monolayer GoSi interface in turn weakens the suppression of secondary electron emission of the graphene layer. Only when the graphene layer number is 3, does the contribution of surface work function to the secondary electron emission suppression appear to be slightly positive.     

高能原电子能量与金属的有效真二次电子发射系数的关系

 提出有效真二次电子发射系数的概念,并从理论上论述了高能原电子的能量与金属的有效真二次电子发射系数的关系，然后用实验数据证明了该理论的正确性，最后对结果进行了讨论。得到了如下结论：不同入射能量的高能原电子轰击同一个金属发射体时， 它们的有效真二次电子发射系数与高能原电子入射能量之积近似为一个常量，有效真二次电子发射系数与高能原电子入射能量成反比。     

Spatial distribution of electron characteristic in argon rf glow discharges

The spatial distributions of the electron density and the mean electron energy of argon radio frequency (rf) glow discharge plasma in a plasma-enhanced chemical vapour deposition (PECVD) system have been investigated using an established movable Langmuir probe. The results indicate that in the axial direction the electron density tends to peak at midway between the two electrodes while the axial variation trend of mean electron energy is different from that of the electron density, the mean electron energy is high near the electrodes. And the mean electron energy near the cathode is much higher than that near the anode. This article focuses on the radial distribution of electron density and mean electron energy. A proposed theoretical model distribution agrees well with the experimental one: the electron density and the mean electron energy both increase from the centre of the glow to the edge of electrodes. This is useful for better understanding the discharge mechanism and searching for a better deposition condition to improve thin film quality.     

Electron acceleration in the inverse free electron laser with a helical wiggler by axial magnetic field and ion-channel guiding

Electron acceleration in the inverse free electron laser (IFEL) with a helical wiggler in the presence of ion-channel guiding and axial magnetic field is investigated in this article. The effects of tapering wiggler amplitude and axial magnetic field are calculated for the electron acceleration. In free electron lasers, electron beams lose energy through radiation while in IFEL electron beams gain energy from the laser. The equation of electron motion and the equation of energy exchange between a single electron and electromagnetic waves are derived and then solved numerically using the fourth order Runge-Kutta method. The tapering effects of a wiggler magnetic field on electron acceleration are investigated and the results show that the electron acceleration increases in the case of a tapered wiggler magnetic field with a proper taper constant.     

微通道板(MCP)电子清刷用电子枪的设计

为了满足Φ30mm MCP大束流短时间电子清刷新工艺要求，以轴向电子枪工作原理为基础，利用静电场对电子的作用理论，分析了电子的运动轨迹，并对电子的偏转进行了计算。根据计算结果，设计了电子枪的基本结构，确定了电子枪的各种参数：灯丝材料为Φ0.05mm的钨（75%）铼（25%）合金丝；灯丝形状为“∨”字型；电子枪外径为Φ35mm，高度为20mm，最大加热功率为12.6W时，电子发射电流密度达到1.26×10-5A/cm2。用该电子枪对4块性能相近的Φ30mm MCP电子清刷4h后，MCP的增益值达到500±50。这表明：用新电子枪可以代替原RUS-A型电子枪。     

Compressing ultrafast electron pulse by radio frequency cavity

An ultrafast electron diffraction technique with both high temporal and spatial resolution has been shown to be a powerful tool to observe the material transient structural change on an atomic scale.The space charge forces in a multi-electron bunch will greatly broaden the electron pulse width,and therefore limit the temporal resolution of the high brightness electron pulse.Here in this work,we design an ultrafast electron diffraction system,and utilize a radio frequency cavity to realize the ultrafast electron pulse compression.We experimentally demonstrate that the stretched electron pulse width of14.98 ps with an electron energy of 40 keV and the electron number of 1.0 ×10~5 can be maximally compressed to about0.61 ps for single-pulse measurement and 2.48 ps for multi-pulse measurement by using a 3.2-GHz radiofrequency cavity.We also theoretically and experimentally analyze the parameters influencing the electron pulse compression efficiency for single-and multi-pulse measurements by considering radiofrequency field time jitter,electron pulse time jitter and their relative time jitter.We suggest that increasing the electron energy or shortening the distance between the compression cavity and the streak cavity can further improve the electron pulse compression efficiency.These experimental and theoretical results are very helpful for designing the ultrafast electron diffraction experiment equipment and compressing the ultrafast electron pulse width in a future study.     

Coherent spin dynamics of different density high mobility two-dimensional electron gas in a GaAs quantum well

We have addressed the dependence of quasi-two-dimensional electron spin dephasing time on the electron gas density in a 17-nm GaAs quantum well using the time-resolved magneto-optical Kerr effect. A superlinear increase in the electron dephasing time with decreasing electron density has been found. The degree of electron spin relaxation anisotropy has been measured and the dependence of spin-orbit splitting on electron gas density has been determined.     

Electron wavelength and drift mobility operators for treating quantum electron waveguides

After showing that the electron wavelength and electron drift-mobility are quantized in quantum quasi-one-dimensional electron wave guides, we introduce and determine electron wavelength and electron drift-mobility quantum operators for investigating electron transport through the above waveguides in the ballistic regime. A linear relationship between the two aforementioned operators is found. Our formulation is valid for carbon nanotubes and nanowires.