Al/ZnO/Al薄膜的结构与磁性分析

采用直流磁控溅射的方法制备了Al/ZnO/Al纳米薄膜,并对薄膜分别在真空及空气中进行退火处理.利用X射线衍射仪(XRD)和物理性能测量仪(PPMS)分别对薄膜样品的结构和磁性进行了表征.XRD分析表明,不同的退火氛围对薄膜的微结构有着很大的影响.采用了一种新的修正方法对磁测量结果进行修正,计算了基底拟合误差的最大值,并对修正后样品的磁性进行了分析.结果显示,室温铁磁性可能与Al和ZnO基体之间发生的电荷转移以及在不同退火氛围下Al在ZnO晶格中的地位变化有关. 关键词： Al/ZnO/Al薄膜 铁磁性 磁性表征     

Al/AlO_x/Al超导隧道结的制备工艺研究

研究了在高阻硅衬底上Al/AlO x/Al隧道结的制备技术,采用电子束蒸发制备Al/AlO x/Al三层材料,湿法刻蚀制备底电极和上电极以及电路连线,PECVD法生长绝缘层(SiO2)保护超导隧道结,RIE刻蚀上电极窗口。在400mK温度下测量了Al/AlO x/Al隧道结样品,得到了较好的隧道结I-V曲线,能隙电压Vg为0.325mV,超导临界电流I c为55nA,漏电流为5nA。     

利用倾斜角度蒸发法制备Al/Al_2O_3/Al超导隧道结

利用电子束曝光法对双层光刻胶进行曝光来制备悬空掩模结构,在此基础上利用电子束蒸发系统采用倾斜角度蒸发法制备铝超导薄膜,采用热氧化法在底层铝膜表面形成氧化铝作为势垒层,制备出铝SIS超导隧道结,并在360mK的情况下对铝结进行了Ⅰ～Ⅴ特性的初步测量.铝隧道结的成功制备为下一步构建超导量子比特器件,研究其量子特性奠定了良好的基础.     

背入射Au/ZnO/Al结构肖特基紫外探测器

设计制作了一种Au/ZnO/Al结构的紫外探测器,光的入射方式采用背入射式。ZnO薄膜是用磁控溅射在蓝宝石衬底上制备的。I-V测试表明:Au与ZnO形成了肖特基接触。得到探测器的光响应峰值在352nm,截止边为382nm,可见抑制比达一个量级。由于该探测器是一种垂直结构器件,对于进一步实现ZnO紫外探测器阵列及单光子探测有很好的研究价值。     

Synthesis and ignition of energetic CuO/Al core/shell nanowires

Energetic thermites (mixtures of Al and metal oxides), due to their high energy densities, have broad applications in propulsion, thermal batteries, waste disposal, and power generation for micro systems. Reducing the sizes of Al and metal oxides down to the nanoscale has been shown to be effective in increasing their reaction rates and reducing their ignition delays. However, it remains a challenge to create mixtures of Al and metal oxides with nanoscale uniformity. Here we report synthesis and ignition studies on thermites with a new nanostructure, i.e., CuO/Al core/shell nanowires (NWs). The CuO NW cores were synthesized by the thermal annealing of copper films and served as templates for the deposition of Al shells by subsequent sputtering. The advantage of such a core/shell NW structure is that CuO and Al are uniformly mixed at the nanoscale. The onset temperatures of the exothermic reaction of the core/shell NWs were similar to those of nanoparticle (NP)-based thermites in terms of magnitude, insensitivity to equivalence ratios and sensitivity to heating rates. Moreover, the core/shell NW thermites, compared to NP-based thermites, exhibit greatly improved mixing uniformity and reduced activation energy for the thermite reaction.     

Al/GaSb异质结的慢正电子研究

用单能慢正电子束和 X 射线衍射方法研究了 Al/n-GaSb 金属半导体异质结在不同温度退火的情况下的演变.采用三层模型既 Al/界面/GaSb 对 S-E 实验数据进行拟合.结果发现在未退火样品的 Al 和 GaSb 之间存在一个厚度大约5nm 的界面层.在经过400℃退火后,该界面厚度增加到约400nm,且 S 参数下降.这可能是由于在退火过程中,界面区域的原子在界面处相互扩散所引起的.Al 膜的 S_(Al)参数降低且效扩散长度 L_(Al)增加,说明 Al 膜内的空位缺陷经过退火被消除且进行结构重整,晶格结构不断变好的结果.衬底 GaSb 的 S_B 参数和有效扩散长度 L_B 的演变表明,经过250℃退火后,原有的正电子捕获中心消失：但是经进一步400℃退火,又产生了新的正电子捕获中心.这可能来源于其他类型的与 V_(Ga)相关缺陷的正电子捕获以及 Ga_(Sb)晶格反位引起的正电子浅捕获.X 射线衔射的测量结果证实了正电子方法的结论.     

Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices

Electrical devices involve different types of diode in prospective electronics is of great importance. In this study, p-type Si surface was covered with thin film of TiO₂ dispersion in H₂O to construct p-Si/TiO₂/Al Schottky barrier diode (D1) and the other one with TiO₂ dispersion doped with zirconium to construct p-Si/TiO₂-Zr/Al diode (D2) by drop-casting method in the same conditions. Electrical properties of as-prepared diodes and effect of zirconium as a dopant were investigated. Current–voltage (I–V) characteristics of these devices were measured at ambient conditions. Some parameters including ideality factor (n), barrier height (Φ_B0), series resistance (Rs) and interface state density (Nss) were calculated from I–V behaviours of diodes. Structural comparisons were based on SEM and EDX measurements. Experimental results indicated that electrical parameters of p-Si/TiO₂/Al Schottky device were influenced by the zirconium dopant in TiO₂.     

甲烷部分氧化制合成气Pt/Al_2O_3催化剂的表征及其反应性能评价

采用浸渍法制备了3种不同负载量的Pt/Al2O3催化剂,考察了催化剂的甲烷选择氧化性能,并用程序升温还原技术,程序升温脱附技术以及微型脉冲催化色谱技术对催化剂进行表征。结果表明,随着Pt的负载量升高,甲烷催化氧化的性能也越好,对CO与H2的选择性也越高。其中,在750℃原料气组成CH4/O2为2∶1,4%Pt负载量的催化剂,甲烷转化率达到98%以上。     

Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111)

The microstructure and the current transport in Ti/Al/Ni/Au ohmic contacts on AlGaN were investigated in this paper.Significant structural changes of the metal stack occurred upon annealing and ohmic contacts were obtained after thermal treatments above 700 C, with specific contact resistance values , which depend on the thickness of the Ti layer.Although the formation of a TiN interfacial layer is independent of the Ti thickness, different contact structures, i.e. the phases and grain location, were found as a function of the Ti layer, which were crucial for the nanoscale current transport through the contact stack. In particular, conductive atomic force microscopy combined with the resistivity measurement of the main phases formed upon annealing (AlNi, AlAu₄, Al₂Au) indicated that the low resistivity Al₂Au phase provides preferential conductive paths for the nanoscopic current flow through the contact.     

常压MOCVD生长ZnO/GaN/Al2O3薄膜及其性能

以去离子水（H2O）和二乙基锌（DEZn）为源材料,生长温度是680℃时,利用常压MOCVD在GaN／Al2O3模板上成功生长了ZnO单晶薄膜,用原子力显微镜（AFM）、X射线双晶衍射（DCXRD）、光致发光谱（PL）对ZnO薄膜的表面形貌、结晶学性质、光学性质作了综合研究。双晶衍射表明,ZnO非对称（1012）面ω扫描的半峰全宽（FWHM）仅为420arcsec,估算所生长ZnO膜的位错密度大约为10^3／cm^2量级,这与具有器件质量的GaN材料的位错密度相当。在ZnO薄膜的低温15K光荧光谱中,观察到很强的自由激子和束缚激子发射以及自由激子与束缚激子的多级声子伴线。     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB2超导薄膜沉积到Al2O3(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)= U0(1-T/(Tc+δ))n (1-H/Hc2(0))m被建立用来分析超导薄膜磁通线的激活能和电阻转变,结果表明该模型能够在整个转变温度范围描述超导体磁通线的激活能和电阻转变.另外,利用多项式Hc2(t)=Hc2(0)+At+Bt2分析了MgB2/Al2O3超导薄膜的上临界磁场,获得了该超导薄膜的各向异性参数γ=Hc2ab(0)/Hc2c(0)= 2.26.     

keV质子辐照Kapton/Al的能量传输过程

采用TRIM和SRIM2003软件模拟计算了10—300keV能量区间质子辐照Kapton/Al的能量传输过程. 依据模拟结果选取了辐照能量参数, 在室温真空条件下, 采用空间综合辐照设备对Kapton/Al进行了质子辐照. 借助于表面红外光谱技术, 对Kapton的重要官能团特征峰做了定量分析, 通过特征峰处吸光度的变化得到了典型分子键的损伤截面. 平均损伤截面和电子能损的强烈依赖关系及TRIM计算结果一致说明keV质子辐照Kapton/Al的辐照损伤主要来自电子能损效应. 太阳吸收比的变化趋势和模拟结果都表明在入射能量80keV附近, 质子辐照Kapton/Al的辐照效应最大.     

6066Al/SiCp复合材料内耗性能研究

用粉末冶金方法制备了6066Al合金和不同SiCp含量的6066Al／SiCp复合材料，用多功能内耗仪在200～600K温度区间内测试了所研究材料在升温过程中的内耗变化趋势，探讨了6066Al／SiCp复合材料在不同温度区间的内耗机制。结果表明6066Al／SiCp的内耗值比6066Al合金内耗值高，特别是在高温阶段比6066Al合金内耗值高得多；6066Al／SiCp和6066Al合金在300-470K时的内耗主要是位错与第二相颗粒交互作用引起的位错内耗，在高温下内耗主要由Al／Al、Al／SiC的界面微滑移引起。     

6066Al/SiC_p复合材料内耗性能研究

用粉末冶金方法制备了6066Al合金和不同SiCp含量的6066Al/SiCp复合材料,用多功能内耗仪在200~600 K温度区间内测试了所研究材料在升温过程中的内耗变化趋势,探讨了6066 Al/SiCp复合材料在不同温度区间的内耗机制。结果表明6066Al/SiCp的内耗值比6066Al合金内耗值高,特别是在高温阶段比6066Al合金内耗值高得多;6066Al/SiCp和6066Al合金在300~470 K时的内耗主要是位错与第二相颗粒交互作用引起的位错内耗,在高温下内耗主要由Al/Al、Al/SiC的界面微滑移引起。     

TiAl/Ti3Al体系剪切变形的分子动力学研究

利用分子动力学方法研究了正化学比的TiAl/Ti3Al双相体系中剪切变形诱发位错形核以及相关结构转变的动态过程以及切变力场对最终结构的影响.研究发现,在TiAl/Ti3Al双相体系中剪切变形诱发黏滞-滑移式的滑移行为;界面在其中起到了传递能量、均衡协变的作用,界面两侧的异相结构保留了单相形变特征.六角密堆积(HCP)-Ti3Al部分各原子层较长时间内呈整体剪切协变,其后形变分化为应力集中诱发层错区和初始完整结构回复区;而面心立方(FCC)-TiAl部分因刚性较大仅存在微协变,其后局部受力区直接诱发相邻原子层间相对滑移,发生FCC向HCP结构转变.变形结构方面,HCP-Ti3Al部分在剪切力较大区域形成连续且稳定的FCC堆垛,近界面区FCC薄层与HCP相交替并存;而FCC-TiAl部分内禀层错和孪晶共存,当力场增大时形成亚稳HCP结构.     

Stability and luminescence properties of CsPbBr3/CdSe/Al core-shell quantum dots

To improve the stability and luminescence properties of CsPbBr₃ QDs, we proposed a new core-shell structure for CsPbBr₃/CdSe/Al quantum dots (QDs). By using a simple method of ion layer adsorption and a reaction method, CdSe and Al were respectively packaged on the surface of CsPbBr₃ QDs to form the core-shell CsPbBr₃/CdSe/Al QDs. After one week in a natural environment, the photoluminescence quantum yields of CsPbBr₃/CdSe/Al QDs were greater than 80%, and the PL intensity remained at 71% of the original intensity. Furthermore, the CsPbBr₃/CdSe/Al QDs were used as green emitters for white light-emitting diodes (LEDs), with the LEDs spectrum covering 129% of the national television system committee (NTSC) standard color gamut. The core-shell structure of QDs can effectively improve the stability of CsPbBr₃ QDs, which has promising prospects in optoelectronic devices.     

Structure evolution and mechanical properties enhancement of Al/AlN multilayer

A set of Al/AlN multilayers with various modulation periods were prepared using DC magnetron sputtering method. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the films was investigated with grazing angle X-ray diffraction (GAXRD). LAXRD results indicate that well-defined multilayer modulation structures are formed for the relatively larger modulation periods. However, the loss of mutilayered structure is detected in the multilayer with low modulation period. A very wide amorphous peak is observed in multilayer with modulation period of 4 nm. The multilayers show obvious crystallization at larger modulation periods, however, the diffraction peaks are much wider than the Al single layer because of the interruption of the continuous columnar grain growth by alternating deposition processes. Nanoindentation experiments were performed to study the mechanical properties as a function of multilayer modulation period. It is found that the hardness of the multilayers is greater than the hardness calculated from rule of mixtures. With the modulation periods adjusted, the multilayers are even harder than its hard component (AlN). A maximum hardness of 24.9 GPa, about 1.9 times larger than its hard component (AlN) and 3.7 times larger than the hardness calculated from the rule of mixtures, is found at the multilayer with modulation period of 16 nm. The wear test results show that the multilayers possess lower and stable friction coefficient, and superior wear properties.     

CuI/Al双层电极的有机场效应晶体管

制备了CuI/Al为源极和漏电极的并五苯基场效应晶体管.相对于纯金属(Al, Au)电极的晶体管,所研制的晶体管的迁移率、阈值电压VT、开关电流比I_on/I_off等参数都有明显改善.研究发现,在Al电极与并五苯半导体之间引入CuI作为空穴注入层,能够明显降低Al电极与并五苯之间的空穴注入势垒.紫外-可见光谱和X射线光电子能谱数据表明,这种空穴注入势垒的降低源自并五苯和Al向CuI的电子转移. 关键词： 有机场效应晶体管 CuI/Al双层源漏电极 电子转移     

Temperature dependent energy-dispersive X-ray diffraction and magnetic study of Fe/Al interface

In situ temperature dependent energy-dispersive structural and magnetic study of electron beam evaporated Fe/Al multilayer sample (MLS) has been investigated. The structural studies show the formation of an intermixed FeAl transition layer of a few nanometers thick at the interface during deposition, which on annealing at 300 °C transforms to B2FeAl intermetallic phase. Magnetization decreases with increase in temperature and drops to minimum above 300 °C due to increase in anti-ferromagnetic interlayer coupling and formation of nonmagnetic FeAl phase at the interface. The Curie temperature (T_c) is found to be 288 °C and is much less than that of bulk bcc Fe.