| 利用倾斜角度蒸发法制备Al/Al_2O_3/Al超导隧道结 |
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| 引用本文： | 陆殷华,许伟伟,沈丹丹,孙国柱,梁敏,曹春海,吴培亨.利用倾斜角度蒸发法制备Al/Al_2O_3/Al超导隧道结[J].低温物理学报,2010(3). |
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| 作者姓名： | 陆殷华 许伟伟 沈丹丹 孙国柱 梁敏 曹春海 吴培亨 |
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| 作者单位： | 南京大学电子科学与工程系超导电子学研究所; |
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| 基金项目： | 国家自然科学基金(批准号:10874074,60571007); 教育部博士点基金(批准号:200802840031)资助的课题 |
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| 摘 要： | 利用电子束曝光法对双层光刻胶进行曝光来制备悬空掩模结构,在此基础上利用电子束蒸发系统采用倾斜角度蒸发法制备铝超导薄膜,采用热氧化法在底层铝膜表面形成氧化铝作为势垒层,制备出铝SIS超导隧道结,并在360mK的情况下对铝结进行了Ⅰ～Ⅴ特性的初步测量.铝隧道结的成功制备为下一步构建超导量子比特器件,研究其量子特性奠定了良好的基础.
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| 关 键 词： | Al/Al_2O_3/Al隧道结 双层光刻胶 悬空掩模结构 |
THE RESEARCH OF THE FABRICATION OF Al/Al_2O_3/Al TUNNEL JUNCTION |
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| LU Yin-hua XU Wei-we SHEN Dan-dan SUN Guo-zhu LIANG Min CAO Chun-hai WU Pei-heng Research Institute of Superconductor Electronics,Nanjing University,Nanjing.THE RESEARCH OF THE FABRICATION OF Al/Al_2O_3/Al TUNNEL JUNCTION[J].Chinese Journal of Low Temperature Physics,2010(3). |
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| Authors: | LU Yin-hua XU Wei-we SHEN Dan-dan SUN Guo-zhu LIANG Min CAO Chun-hai WU Pei-heng Research Institute of Superconductor Electronics Nanjing University Nanjing |
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| Institution: | LU Yin-hua XU Wei-we SHEN Dan-dan SUN Guo-zhu LIANG Min CAO Chun-hai WU Pei-heng Research Institute of Superconductor Electronics,Nanjing University,Nanjing 210093 |
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| Abstract: | Our research task is to fabricate the Al/Al_2O_3/Al tunnel junction using the method of the combination of angled evaporation based on a suspended shadw mask.The I~V characteristics of the Al/Al_2O_3/Al tunnel junction were measured at the temperature of 20mK.Al junction is successfully fabricated,which makes it promising for research in quantum qubits. |
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| Keywords: | Al/Al_2O_3/Al junctions bi-layer resist system suspended shadow mask |
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