大角度宽光谱红外成像系统灰度调节膜的研制EI北大核心CSCD

随着现代光学测试技术的不断发展,对图像处理技术的要求越来越高。灰度级层次蕴含了图像细节的重要信息,因此改变图像灰度级可以使图像的细节更清晰。通过滤光技术可以形成不同的灰度级。依据光学薄膜理论,并结合膜系设计软件,通过建立膜系优化评价函数,实现了0°~60°入射3~5μm滤光膜的设计,并采用真空沉积技术研制了灰度调节膜。通过在钼舟上方放置铜网,解决了由于SiO沉积速率不稳定产生的膜层表面缺陷的问题;采用逆向分析法对实验测试结果进行模拟,通过调整膜层监控方式,使膜系的敏感层厚度得以精准控制,降低了膜厚控制误差,从而平滑了光谱曲线。经过测试,制备的灰度调节膜满足红外成像系统灰度级调节的要求,并通过了相关环境测试。     

大角度宽光谱红外成像系统灰度调节膜的研制

随着现代光学测试技术的不断发展,对图像处理技术的要求越来越高。灰度级层次蕴含了图像细节的重要信息,因此改变图像灰度级可以使图像的细节更清晰。通过滤光技术可以形成不同的灰度级。依据光学薄膜理论,并结合膜系设计软件,通过建立膜系优化评价函数,实现了0°~60°入射3~5μm滤光膜的设计,并采用真空沉积技术研制了灰度调节膜。通过在钼舟上方放置铜网,解决了由于SiO沉积速率不稳定产生的膜层表面缺陷的问题;采用逆向分析法对实验测试结果进行模拟,通过调整膜层监控方式,使膜系的敏感层厚度得以精准控制,降低了膜厚控制误差,从而平滑了光谱曲线。经过测试,制备的灰度调节膜满足红外成像系统灰度级调节的要求,并通过了相关环境测试。     

基于量子遗传算法的宽带离散化极紫外多层膜的研制

提出了一种基于量子遗传算法的宽带极紫外多层膜的离散化设计方法,解决了在膜系设计中普遍采用的遗传算法存在求解精度低的问题.同时在基于量子遗传算法的膜系设计方法中对膜系进行了离散化设计,解决了在仅由时间控制膜厚且沉积速率较大的镀膜系统中的膜厚高精度控制的问题.依据量子遗传算法的膜系设计结果采用磁控溅射镀膜系统镀制宽带极紫外多层膜.测试结果表明,宽角度极紫外多层膜的入射角为0°~15°,反射率达45%以上;宽光谱极紫外多层膜的入射波长为13~15nm,反射率达20%以上.相关研究工作为宽带极紫外多层膜的研发提供了另一种可供选择的且较优的搜索优化算法,同时该算法结合实验,实现膜厚的离散化设计,使镀制出的多层膜具有较好的光谱性能.     

卫星激光通信滤光膜的研制

为满足卫星激光通信中超高速数据传输的特殊要求,采用电子束和离子辅助沉积技术,制备了532nm、632nm和1 064nm波长处高反射,808nm和1 550nm处高透射的多波段滤光膜.选取了H4和SiO2作为高低折射率材料,通过对膜系设计曲线的不断优化,减少了灵敏层的个数,得到了相对易于制备的膜系结构;采用电子束加热蒸发方法并加以离子辅助沉积系统制备薄膜,采用光控与晶控同时监控的方法控制膜厚;通过不断调整工艺,提高了薄膜的抗激光损伤能力,减小了膜厚控制误差,提高了透射波段的透过率及反射波段的反射率,最终得到了光谱性能较好的滤光膜.该薄膜能够承受雨淋、盐雾、高低温等环境测试,满足使用要求.     

灵敏度控制思想在主动膜系设计中的快速实现算法

 基于斜入射薄膜制备实践中镀膜误差对光谱性能的严重退化影响的认识,提出了一种基于灵敏度控制思想的主动膜系设计方法。在深入分析了镀膜中膜层结构参数误差的分布规律的基础上,运用膜系光谱系数关于膜层参数的导数计算的解析模型,建立了膜系灵敏度的定量计算模型和快速实现算法。以一45°入射高精度消偏振增透膜的设计实验为例,探讨了灵敏度控制思想在膜系设计中的可行性、快速性和有效性。结果表明,这一新型设计方法不会显著增加程序时间消耗,能获得具有良好可镀制性能的薄膜,对于正入射和宽角度入射膜同样适用,而且可以避免昂贵的失败试镀和采样,有助于缩短新薄膜的生产周期,特别是对于高精度斜入射薄膜的重复性制备具有重要意义。     

卫星激光通信滤光膜的研制

为满足卫星激光通信中超高速数据传输的特殊要求,采用电子束和离子辅助沉积技术,制备了532 nm、632 nm和1 064 nm波长处高反射,808 nm和1 550 nm处高透射的多波段滤光膜.选取了H₄和SiO₂作为高低折射率材料,通过对膜系设计曲线的不断优化,减少了灵敏层的个数,得到了相对易于制备的膜系结构;采用电子束加热蒸发方法并加以离子辅助沉积系统制备薄膜, 采用光控与晶控同时监控的方法控制膜厚;通过不断调整工艺,提高了薄膜的抗激光损伤能力,减小了膜厚控制误差,提高了透射波段的透过率及反射波段的反射率,最终得到了光谱性能较好的滤光膜.该薄膜能够承受雨淋、盐雾、高低温等环境测试,满足使用要求.     

二阶关联成像系统宽光谱吸收膜研制

为满足关联成像系统抑制背景的需求,选用Al、Cr和SiO_2作为镀膜材料,依据薄膜吸收理论,结合膜系设计软件设计了宽光谱吸收膜,并采用真空沉积技术获得了该薄膜样品.通过真空阶梯式退火,减小了膜层内应力,解决了薄膜牢固度问题;采用交互式分析对测试结果逆向反演,通过优化工艺参量,使膜系中敏感薄层厚度得以精准控制,并减小了膜厚控制误差.制备的吸收膜在400~1 100nm波段平均吸收率达到99.1%,满足系统使用要求.     

光学薄膜鲁棒设计中膜系误差灵敏度控制

提出了一种基于膜系误差灵敏度控制的鲁棒膜系设计方法,建立了鲁棒膜系设计评价函数在膜层参数误差统计分布下的解析表达式,避免统计样本数目有限性造成的样本均值与总体期望的误差,以及过大数目样本造成的长的计算时间消耗,并通过宽带增透膜、中性分光膜和线性透射率滤光片等多种薄膜的鲁棒设计实验证实了其在膜层参数误差控制上的效果。结果表明:该新型鲁棒膜系设计方法具有内在的快速算法特性,其设计膜系对镀膜中的膜厚监控误差不敏感,对于高质量薄膜的重复制备和批量成品率的提高具有实用价值。     

基于Nd∶YVO_4晶体四波段腔面膜的研制

黄光激光器作为一种接近人眼敏感区域的激光器在诸多领域都发挥着重要的作用,而谐振腔又是激光器中重要组成部分.本文以Nd∶YVO4(c-cut)晶体为基底,利用真空镀膜设备研制出四波段腔面膜.通过分析膜系设计过程中膜层电场强度和优化膜系,使膜层中驻波场强得到合理分布,从而在理论上减小膜层损伤的可能性;通过TFCalc软件对测试结果进行工艺反馈分析,经过多次模拟实验,发现在不同控制波长下,采用相同监控方法监测不同的膜厚比例系数,通过调整工具因子解决了光谱曲线漂移的问题,制备出膜层牢固、化学性能稳定、满足四个波段光谱输出的黄光激光器腔面膜.     

结构选择优化及过正量膜厚控制在激光析光膜中的应用

分忻了膜系设计中的膜层结构选择性优化方法,阐述了用光电极值法控制非λ／4膜系的膜厚的方法计算出沉积每一层县有极值的波长,然后根据此波长,给出一定的过正量进行膜厚模拟,最后确定每‘层的监控波长。利用这种方法可以提高膜系厚度的控制精度。该义介绍了自主开发膜系设计软件的部分功能,并利用该软件设计并镀制出1060nm的激光析光膜。     

Preparation and characterization of the LiInSe2 thin films

Summary p-type LiInSe₂ films have been prepared by the rapid evaporation method onn-type Si andn-type GaP. Various characterization techniques such as the X-ray analysis, the Rutherford backscattering (RBS) analysis and the scanning electron microscopy were used to evaluated the quality of the films. The rectifications of the preliminary heterojunctions are demonstrated. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.     

气相沉积技术在原子制造领域的发展与应用

随着未来信息器件朝着更小尺寸、更低功耗和更高性能方向的发展,构建器件的材料尺寸将进一步缩小.传统的"自上而下"技术在信息器件发展到纳米量级时遇到瓶颈,而气相沉积技术由于其能在原子尺度构筑纳米结构引起极大关注,被认为是最有潜力突破现有制造极限进而在原子尺度构造、搭建物质形态的"自下而上"方法.本文重点讨论适用于低维材料的原子尺度制造的分子束外延技术和原子层沉积/刻蚀技术.简要介绍相关技术中蕴含的科学原理及其在纳米信息器件加工和制造领域的应用,并探讨如何在原子尺度实现对低维功能材料厚度和微观形貌的精密控制.     

Si基Sc膜的制备及结构分析

采用电子束镀膜方法在Si基底上制备了Sc膜,利用XRD,SEM分析了不同镀膜工艺条件下制备的Sc膜的形貌和结构。结果表明:基底温度在350～550 ℃时,薄膜主要由单质Sc组成,而且随着基底温度的升高,膜的颗粒尺寸增大,膜也变得更加致密;基底温度提高至650 ℃时,膜全部由ScSi化合物组成,膜变成颗粒状结构。沉积速率对低温时Sc膜的形貌与结构的影响不明显,颗粒尺寸随沉积速率的增大而增大,但物相结构基本没有发生变化;而在高温650 ℃时,沉积速率对膜的形貌与结构产生了很大的影响,随着沉积速率的增大,膜表面出现了大量微裂纹,而且较低的沉积速率有利于获得衍射峰单一的膜,增大沉积速率将会导致衍射峰数量明显增加。     

激光驻波场中Cr原子运动轨迹与汇聚沉积的分析

利用半经典模型，从铬原子在激光驻波场中的运动方程出发，通过数值解方法模拟了铬原子在驻波场中的运动轨迹，并分析了原子的纵向速度分布和准直程度及球差对沉积条纹结构的影响，同时也讨论了基片摆放位置对沉积条纹结构的影响，并通过实验得到了纳米光栅条纹结构. 关键词： 激光驻波场 原子沉积 运动轨迹 沉积分布     

SR-FEL宽带腔镜与双带腔镜光学膜系实验研究与研制

利用“电子束蒸发沉积薄膜生长技术+离子束溅射沉积薄膜生长技术”、“HfO₂/SiO₂+Al₂O₃/SiO₂+M-SiO₂”复合光学膜系设计技术、400°C4h高温处理技术, 研制的SR-FEL宽带腔镜光学膜系在355nm中心波长的绝对光学反射率测量值为R(355nm)=99.45%, 反射光谱带宽测量值为Δλ(R≥99.00%)=75nm; 研制的355nm/248nm双带腔镜光学膜系, 在355nm中心波长, 其绝对光学反射率测量值为R(355nm)=99.69%, 反射光谱带宽测量值为Δλ(R≥99.00%)=59nm; 在248nm中心波长, R(248nm)=98.21%, 绝对光学反射率光谱带宽测量值Δλ(R≥99.00)=9mm, Δλ(R≥98.00%)=33nm.     

Online deposition measurement and slag bubble behavior in the reduction zone of pulverized coal staged combustion

An online thermogravimetric measurement method of ash deposition was developed. Ash deposition and slag bubble in the reductive zone of pulverized coal staged combustion were investigated. Firstly, a steady pulverized coal staged combustion was achieved in an electrically heated down-fired furnace. Additionally, gas species, coal conversion, and particle size distribution were quantitatively measured. Secondly, real-time ash deposition rates at different temperatures (1100–1400 °C) were measured, and deposition samples were carefully collected with an N₂ protection method. The morphologies of collected samples were investigated through a scanning electron microscope. It was found that the deposited ash transformed from a porous layer composed of loosely bound particles to a solid layer formed by molten slag. Different behaviors of the slag bubble were observed, and bubble sizes were significantly affected by the deposition temperature. A deposition and bubble formation mechanism was proposed and used for modeling. Results showed that the proposed model well predicted the observed ash deposition and bubble formation process.     

ZnS和MgF2薄膜的离子辅助淀积

用Ar离子辅助制备了ZnS和MgF_2薄膜,依据滤光片吸潮波长漂移的测量,MgF_2膜的聚集密度大约从未轰击时的0.8上升到轰击后的0.9～0.95,实验发现,高能离子轰击(>1keV),膜层的吸收散射损耗增加,而低能离子轰击(<700eV)可以保持优良的光学性质,并显著地增加膜层的牢固度,这对于温度敏感的基底制备耐久薄膜是一个重要的应用.     

等离子增强原子层沉积低温生长GaN薄膜

采用等离子增强原子层沉积技术在低温下于单晶硅衬底上成功生长了Ga N多晶薄膜,利用椭圆偏振仪、低角度掠入射X射线衍射仪、X射线光电子能谱仪对薄膜样品的生长速率、晶体结构及薄膜成分进行了表征和分析.结果表明,等离子增强原子层沉积技术生长Ga N的温度窗口为210—270?C,薄膜在较高生长温度下呈多晶态,在较低温度下呈非晶态;薄膜中N元素与大部分Ga元素结合成N—Ga键生成Ga N,有少量的Ga元素以Ga—O键存在,多晶Ga N薄膜含有少量非晶态Ga_2O_3.     

线性微波化学气相沉积制备SiNx薄膜的微结构及光学性能研究

利用自主研发的线性微波化学气相沉积系统在不同微波功率、微波占空比、基片温度、特气比例条件下制备了SiN_x薄膜. 通过扫描电子显微镜、椭圆偏振仪等表征测量技术, 研究了不同工艺参数对SiN_x薄膜表面形貌、元素配比、折射率、沉积速度的影响, 并探讨了薄膜元素配比、折射率、沉积速度间的关系. 结果表明: 利用线性微波沉积技术, 不同工艺参数下制备的SiN_x薄膜组成元素分布均匀, 同时具有平整的表面状态; 特气比例和微波占空比是影响薄膜折射率的最主要因素, 薄膜折射率在1.92–2.33之间连续可调; 微波功率、微波占空比、沉积温度、特气比例都对SiN_x 薄膜沉积速度影响较大, 制备的SiN_x薄膜最大沉积速度为135 nm·min^-1.