| Si基Sc膜的制备及结构分析 |
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| 引用本文： | 吴清英,邴文增,刘锦华,罗顺忠.Si基Sc膜的制备及结构分析[J].强激光与粒子束,2012,24(5):1121-1125. |
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| 作者姓名： | 吴清英 邴文增 刘锦华 罗顺忠 |
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| 作者单位： | 1.中国工程物理研究院 核物理与化学研究所, 四川 绵阳 621 900 |
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| 基金项目： | 中国工程物理研究院科学技术发展基金 |
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| 摘 要： | 采用电子束镀膜方法在Si基底上制备了Sc膜，利用XRD,SEM分析了不同镀膜工艺条件下制备的Sc膜的形貌和结构。结果表明:基底温度在350～550 ℃时，薄膜主要由单质Sc组成，而且随着基底温度的升高，膜的颗粒尺寸增大，膜也变得更加致密；基底温度提高至650 ℃时，膜全部由ScSi化合物组成，膜变成颗粒状结构。沉积速率对低温时Sc膜的形貌与结构的影响不明显，颗粒尺寸随沉积速率的增大而增大，但物相结构基本没有发生变化；而在高温650 ℃时，沉积速率对膜的形貌与结构产生了很大的影响，随着沉积速率的增大，膜表面出现了大量微裂纹，而且较低的沉积速率有利于获得衍射峰单一的膜，增大沉积速率将会导致衍射峰数量明显增加。
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| 关 键 词： | 钪 电子束镀膜 基底温度 沉积速率 形貌 |
| 收稿时间： | 2011/8/19 |
Preparation and structure analysis of nanocrystalline Sc film grown on Si substrate |
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| Wu Qingying
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Bing Wenzeng
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Liu Jinhua
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Luo Shunzhong.Preparation and structure analysis of nanocrystalline Sc film grown on Si substrate[J].High Power Laser and Particle Beams,2012,24(5):1121-1125. |
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| Authors: | Wu Qingying Bing Wenzeng Liu Jinhua Luo Shunzhong |
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| Affiliation: | 1.Institute of Nuclear Physics and Chemistry,CAEP,P.O.Box 919-214,Mianyang 621900,China |
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| Abstract: | Sc films have been successfully grown on Si substrates by electron beam deposition(EBD). The microstructure and surface morphology of Sc films prepared with different deposition parameters were examined by X-ray diffraction and scanning electron microscopy. The observations show that, in the substrate temperature range of 350 to 550 ℃, the films are mainly composed by Sc, and higher substrate temperature leads to more compact films with larger grain sizes. With the temperature increasing up to 650 ℃, the reaction between Sc and Si makes a film of ScSi. At lower temperature, the effects of deposition rate on the morphologies and structures of Sc films are weak. While at the higher temperature of 650 ℃, micro cracks appear and the number of ScSi peaks increases with increasing the deposition rate. |
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| Keywords: | scandium electron beam deposition substrate temperature deposition rate morphology |
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