磁性薄膜的晶格结构和磁性

采用Monte-Carlo模拟方法对六边形、正方形和三角形晶格结构磁性薄膜的磁学特性及磁畴结构进行了模拟,结果表明,磁性薄膜的磁性特征及其磁相变温度和薄膜结构密切相关并存在临界膜厚,当薄膜厚度大于临界膜厚时薄膜磁性特征稳定.在低温区,不同结构磁性薄膜的磁滞回线均出现台阶现象,结果同相关实验一致.     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

自旋转向相变中的条纹磁畴研究

用光激发电子显微镜研究了Fe／Ni铁磁膜和Co／Cu／Fe／Ni磁耦合膜中的条纹磁畴．实验发现：在Fe／Ni体系中，条纹磁畴宽度随着铁层厚度趋近于自旋转向相变点呈指数下降；在Co／Cu／Fe／Ni体系中，Fe／M层中的条纹磁畴会沿着钴层磁矩的方向排列，其磁畴宽度会随着Co-Fe／Ni间的层间耦合强度呈指数下降．理论上推导出条纹磁畴随着磁各向异性能和层间耦合强度变化的统一公式，而实验结果与理论符合得非常好。     

Cu膜的光学特性尺寸效应及最小连续膜厚研究

采用离子束溅射在K9玻璃基底上沉积了不同厚度的Cu膜,利用Lambda-900分光光度计,测量了波长为310 nm到1300 nm范围内Cu膜的反射率和透射率.选定波长为310、350、400、430、550、632、800、1200 nm时对薄膜的反射率、透射率和吸收率随膜厚变化的关系进行研究.同时,对Cu膜的光学常量也进行了讨论.结果显示,Cu膜的光学特性都有明显的尺寸效应.将波长为550 nm时的反射率和透射率随Cu膜厚度变化关系的交点对应厚度作为特征厚度, 该厚度可认为是金属Cu膜生长从不连续膜进入连续膜的最小连续膜厚.根据这一特征判据,离子束溅射沉积Cu膜样品的最小连续膜厚为33 nm.利用原子力显微镜观测了膜厚在特征厚度附近时Cu膜的表面形貌.     

不同气压环境对飞秒激光在铬膜表面诱导周期性条纹结构的影响

实验研究了蓝色飞秒激光(1kHz,50fs,400nm)在105 Pa(标准气压)和10-3 Pa两种不同气压环境下,在单晶硅衬底的金属铬膜表面形成亚波长(~250nm)一维周期性条纹结构的情况,分析比较了入射激光能流、样品扫描速度、样品薄膜厚度等参数对表面条纹结构的影响.结果表明,10-3 Pa的真空环境可以有效改善铬膜表面亚波长条纹结构的形成质量;随着铬膜厚度的减小(100~25nm),表面条纹质量逐渐提高,但当铬膜太薄(≤25nm)时材料表面易出现烧蚀不均匀现象;另外,随着飞秒激光能流密度的降低或扫描速度的增大,条纹结构的空间周期将会减小,此时条纹之间的沟槽内逐渐出现纳米线分布.     

磁控溅射制备铬薄膜的结构和光电学性质(英文)

用直流磁控溅射技术在石英基片上制备不同厚度(5nm～114nm之间)的铬膜.使用X射线衍射仪和分光光度计分别检测薄膜的结构和光学性质,利用德鲁特模型和薄膜的透射、反射光谱计算铬膜的厚度和光学常量,并采用Van der Pauw方法测量薄膜电学性质.结果表明:制备的铬薄膜为体心立方的多晶态,随着膜厚的增加,薄膜的结晶性能提高,晶粒尺寸增大;在可见光区域,当膜厚小于32nm时,随着膜厚的增加,折射率快速减小,消光系数快速增大,当膜厚大于32nm时,折射率和消光系数均缓慢减小并逐渐趋于稳定;薄膜电阻率随膜厚的增加为一次指数衰减.     

近红外波段锑基铋掺杂薄膜厚度对光学常数与光学带隙的影响

采用磁控溅射法制备了不同厚度的锑基铋掺杂薄膜,用X射线衍射(XRD)和透射电子显微镜(TEM)研究了薄膜结构随厚度的变化。利用椭圆偏振法测定了样品薄膜在近红外波段的光学常数与光学带隙,研究了膜厚对样品薄膜光学常数和光学带隙的影响。结果表明,膜厚从7 nm增加至100 nm时,其结构由非晶态转变为晶态。在950～2200 nm波段,不同厚度薄膜样品的折射率在4.6～8.9范围,消光系数在0.6～5.8范围,光学带隙在0.32～0.16 eV范围。随着膜厚的增加,薄膜的折射率和光学带隙减小,而消光系数升高;光学常数在膜厚50 nm时存在临界值,其原因是临界值前后薄膜微观结构变化不同。     

Ni-Zn铁氧体薄膜的结构和磁性

采用交替溅射方法制备了Ni_Zn铁氧体薄膜，并研究了薄膜成分和制 备条件例如热处理温度、氧分压、膜厚、衬底层等因素对Ni_Zn铁氧体薄膜的影响.实验表明沉积态薄膜为非晶态，经大气中不同温度热处理后得到了尖晶石结构，其主峰为(311)峰 .另外，通过不同条件对Ni_Zn铁氧体薄膜的研究，找到了合适的Ni_Zn铁氧体薄膜的制备条件. 关键词： 薄膜 Ni_Zn铁氧体 交替溅射     

磁控溅射制备铬薄膜的结构和光电学性质

用直流磁控溅射技术在石英基片上制备不同厚度(5 nm~114 nm之间)的铬膜.使用X射线衍射仪和分光光度计分别检测薄膜的结构和光学性质,利用德鲁特模型和薄膜的透射、反射光谱计算铬膜的厚度和光学常量,并采用Van der Pauw方法测量薄膜电学性质.结果表明:制备的铬薄膜为体心立方的多晶态,随着膜厚的增加,薄膜的结晶性能提高,晶粒尺寸增大;在可见光区域,当膜厚小于32 nm时,随着膜厚的增加,折射率快速减小,消光系数快速增大,当膜厚大于32 nm时,折射率和消光系数均缓慢减小并逐渐趋于稳定;薄膜电阻率随膜厚的增加为一次指数衰减.     

干涉效应对ITO薄膜光学性能的影响

为揭示ITO薄膜膜厚对透光率及色泽感影响规律,本文采用TFCalc光学薄膜设计软件计算了50～700 nm膜厚的ITO薄膜可见光透光率,平均透光率和人眼最为敏感波长550 nm的透光率与膜厚的关系.采用膜层干涉理论研究了ITO膜厚和入射角对其透光率和色泽感影响规律和物理机制.研究结果表明:对特定膜厚的ITO薄膜,其可见光随膜厚增加会出现系列透射峰,膜厚越大,对应透射峰也相应增加.ITO薄膜可见光透光率,平均透光率和特定波长550 nm的可见光透光率随膜厚的增加呈锯齿状;随膜厚增加,ITO薄膜的颜色呈现黄绿色、橙色、紫红色、青色、黄绿色周期性的变化.当ITO膜厚为300 nm,入射角从30°增加到60°时,薄膜色泽从暗紫色变为亮紫色.通过本论文的研究,建立了ITO薄膜和膜厚关系的色卡,这对工业控制及改善ITO薄膜的色泽提供技术支撑.     

Magnetic stripe domains in coupled magnetic sandwiches

Magnetic stripe domains in the spin reorientation transition region are investigated in (Fe/Ni)/Cu(001) and Co/Cu/(Fe/Ni)/Cu(001) using photoemission electron microscopy. For (Fe/Ni)/Cu(001), the stripe domain width decreases exponentially as the Fe/Ni film approaches the spin reorientation transition point. For Co/Cu/(Fe/Ni)/Cu(001), the Fe/Ni stripe orientation is aligned with the Co in-plane magnetization, and the stripe domain width decreases exponentially with increasing the interlayer coupling between the Fe/Ni and Co films. By considering magnetic stripes within an in-plane magnetic field, we reveal a universal dependence of the stripe domain width on the magnetic anisotropy and on the interlayer coupling.     

Regulating the magnetic anisotropy by Hf thickness and heat treatment in Pt/Co/Hf films

Pt/Co/Hf multilayers were prepared by magnetron sputtering, and the magnetic anisotropy was effectively regulated by Hf thickness and heat treatment in Pt/Co/Hf films. The interface microstructures were characterized. The influence of the interface microstructure on magnetic properties was studied. The results show that the magnetic anisotropy in Pt/Co/Hf films is closely related to the interface microstructure, which is influenced by Hf thickness and the heat treatment temperature. Microstructure analysis shows that after the Pt(3)/Co(1.5)/Hf(1) film is heat-treated, the CoO_x content increases, more CoPt(111) forms, the interface is smoother and sharper, and the roughness of the Co/Hf interface decreases. Several factors work together to cause the magnetic anisotropy of the sample to change from in-plane magnetic anisotropy (IMA)to perpendicular magnetic anisotropy (PMA).     

Remanence due to wall magnetization and counterintuitive magnetometry data in 200-nm films of Ni

200-nm-thick Ni films in an epitaxial Cu/Ni/Cu/Si(001) structure are expected to have an in-plane effective magnetic anisotropy. However, the in-plane remanence is only 42%, and magnetic force microscopy domain images suggest perpendicular magnetization. Quantitative magnetic force microscopy analysis can resolve the inconsistencies and show that (i) the films have perpendicular domains capped by closure domains with magnetization canted at 51 degrees from the film normal, (ii) the magnetization in the Bloch domain walls between the perpendicular domains accounts for the low in-plane remanence, and (iii) the perpendicular magnetization process requires a short-range domain wall motion prior to wall-magnetization rotation and is nonhysteretic, whereas the in-plane magnetization requires long-range motion before domain-magnetization rotation and is hysteretic.     

Thickness dependence of magnetic anisotropic properties of FeCoNd films

The magnetic FeCoNd films with thickness (t) from 50 to 166 nm were fabricated by RF magnetron co-sputtering at ambient condition. The amorphous structures of all of the films were investigated by X-ray diffraction and transmission electron microscopy. A spin reorientation transition from in-plane single domain state to out-of-plane stripe domain state was observed as a function of t. When t is below a critical thickness, magnetic moments lie in the film plane corresponding to in-plane single domain state because of the strong demagnetization energy. However, when t is increased, out-of-plane stripe domain structure was developed due to a dominated perpendicular magnetic anisotropy. Scanning electron microscopy data indicate that the perpendicular anisotropy, which is responsible for the formation of stripe domains, may result from the shape effect of the columnar growth of the FeCo grains.     

热处理对制备辉光放电聚合物薄膜结构及光学性能的影响

利用低压等离子体聚合技术制备了约5 μm的辉光放电聚合物薄膜, 将所制备的样品放入热处理炉中通入氩气保护, 分别在280 ℃, 300 ℃, 320 ℃, 340 ℃进行热处理. 对热处理后的样品采用傅里叶变换红外吸收光谱(FT-IR)分析了不同热处理温度对薄膜结构的影响. 对CH振动区进行了分峰高斯拟合, 定量的分析了个官能团的变化. 利用紫外可见光谱仪分析了热处理前后薄膜在紫外–可见光区域内光学透过率及光学带隙的变化. 结果表明: 随着热处理温度的升高,薄膜中H含量减少, 薄膜中甲基相对含量减少, 而双键、芳香环结构相对含量增加, 在600 nm以后的可见光区, 薄膜的透过率减小. 薄膜光透过率的截止波长红移, 光学带隙减小. 关键词： 热处理 薄膜结构 等离子体聚合 光学性能     

Ge纳米结构的形貌与铁磁性研究

利用等离子体增强化学气相沉积技术制备了厚度不同的Ge薄膜, 随着样品厚度的减小, 样品表现出了室温铁磁性. 厚度为12 nm样品经过300 ℃退火后, 由于颗粒细化, 颗粒之间的界面增加, 界面缺陷增加, 样品表现出最大的铁磁性 (50 emu/cm³). 场冷却和零场冷却曲线测试表明居里温度约为350 K. 进行600 ℃退火后, 颗粒团聚, 样品的铁磁性最小. 当样品厚度进一步减小为6 nm时, 沉积态样品表现出铁磁性和顺磁性共存. 对6 nm厚的样品进行300 ℃退火后, 样品只具有铁磁性. 进行600 ℃退火后, 样品却只具有顺磁性. 12 nm 和6 nm 厚的Ge纳米结构薄膜随退火温度变化表现出不同的磁性规律, 我们认为是由于样品的颗粒大小和颗粒分布不同造成的. 样品越薄, Si基底与Ge薄膜之间的界面缺陷越明显, 界面缺陷以及Ge颗粒之间的界面缺陷为样品提供了未配对电子, 未配对电子的铁磁性耦合强度与样品颗粒的分布以及颗粒之间的结合有一定的关系. 颗粒之间分散或颗粒之间的融合程度大都将会降低样品的铁磁性.     

强磁场对不同厚度Fe-Ni纳米多晶薄膜的生长过程及磁性能的影响

有无6 T强磁场条件下, 利用分子束气相沉积方法制备了21 nm和235 nm厚的Fe-Ni纳米多晶薄膜. 研究发现, 0 T时, 21 nm厚的薄膜是晶粒堆叠而成, 晶粒尺寸为6–7 nm; 6 T时, 21 nm厚的薄膜首先在基片表面形成了晶粒相互连接的5 nm平坦层, 晶粒沿基片表面拉长, 随后以6–7 nm尺寸的晶粒堆叠而成; 0 T时, 235 nm厚度的薄膜生长初期平均晶粒尺寸为3.6 nm, 生长中期平均晶粒尺寸为5.6 nm, 生长末期薄膜近似柱状方式生长, 晶粒沿生长方向拉长; 6 T时, 235 nm厚度的薄膜在基片表面也形成了晶粒相互连接的5 nm平坦层, 晶粒沿基片表面拉长, 随后以尺寸均匀的6.1 nm晶粒堆叠而成; 而且, 6 T强磁场使得不同厚度薄膜的面外与面内矫顽力都降低.     

Angular dependence of the in-plane magnetization of (100) Cu/Ni/Cu structures

(100) Cu/Ni/Cu sandwich structures have been deposited on (100) Si using the (100) Cu epitaxially grown as the seed layer. The in-plane epitaxial relation between the metal films and Si allows the study of angular dependence of the magnetization for the field parallel to the film plane. Keeping the Cu layers at 1000 Å each and varying the Ni layers between 50 and 1000 Å, the magnetization along the [110] edge is larger than that along the [100] one. This is observed for both structures with a Ni thickness of 1000 and 500 Å, respectively. For the thinner Ni layers, the angular dependence is interfered by the reversal in magnetic anisotropy reported earlier. For such structures, a squared hysteresis loop is observed for the field perpendicular to the film plane, whereas one with little loop is observed for the in-plane magnetization. The angular dependence observed for the 1000 and 500 Å Ni films is the same as that of single crystal Ni. The (100) Cu/Ni/Cu films thus grown can be used for other magnetic measurements in the exploration of two-dimensional magnetism with controlled orientations.