荧光素掺杂的溶胶凝胶SiO2/甲基硅油复合薄膜的制备和光谱特性

采用溶胶-凝胶(Sol-Gel)法制备了掺杂荧光素(FL)的SiO₂/甲基硅油(MSO)复合薄膜,并且测定了这种薄膜的光谱特性.实验表明,荧光素掺杂的SiO₂薄膜在350nm~450nm波长范围内激发,在520nm附近有最强的荧光发射峰;与常规SiO₂膜相比较,SiO₂/甲基硅油(MSO)复合薄膜的荧光发射强度可增加50%;在70℃下的加速老化实验表明,常规SiO₂薄膜20天后开始出现严重的荧光猝灭现象,而复合膜放置一个月后荧光强度仅下降了15%.     

溶胶-凝胶法制备聚醚砜-二氧化硅复合材料

以聚醚砜(PES)为基体,通过溶胶-凝胶过程,得到了分散均匀的PES/SiO₂杂化材料,用扫描电镜、透射电镜、傅里叶红外及差示扫描量热法研究不同SiO₂含量的PES/SiO₂杂化材料材料性能.结果表明,当PES/SiO₂杂化材料中SiO₂的质量分数大于10%时可获得有机聚合物链段与无机网络互穿的均匀分散的复合材料.此材料的玻璃化转变温度(Tg)明显提高.     

全无机钙钛矿量子点的疏水改性及LED应用——推荐一个本科生综合化学实验

介绍一个综合化学实验——全无机钙钛矿量子点的疏水改性及LED应用。我们以三甲基氯硅烷和莫来石纤维增强SiO₂气凝胶的疏水性和韧性，获得疏水SiO₂气凝胶，随后以该疏水SiO₂气凝胶吸附全无机钙钛矿量子点形成CsPbX3@SiO₂气凝胶复合材料。通过接触角、红外光谱、X射线衍射等表征手段证实SiO₂气凝胶的成功改性，并制作了LED器件。本实验涉及材料的合成、表征和应用，可作为化学和应用化学专业学生的综合化学实验，有助于提高学生的科学素养，激发对科学研究的兴趣。     

耐高温核/壳结构TiO2/SiO2复合气凝胶的制备及其光催化性能

以钛酸四丁酯为源, 采用苯胺-丙酮原位生成水溶胶-凝胶法, 在乙醇超临界干燥过程中用部分水解的钛醇盐和硅醇盐对TiO₂凝胶进行超临界修饰制备了具有核/壳纳米结构的块体TiO₂/SiO₂复合气凝胶. 制备的复合气凝胶具有优异的机械性能, 其杨氏模量可达4.5 MPa. 复合气凝胶同时具有极好的高温热稳定性. 经过1000 ℃热处理后, 线性收缩由纯TiO₂气凝胶的31%降至复合气凝胶的10%, 且比表面积由纯TiO₂气凝胶的31 m²·g^-1提升至复合气凝胶的143 m²·g^-1. 此外, 该复合气凝胶经1000 ℃热处理后具有优异的光催化降解亚甲基蓝的性能. 其优异的光催化性能得益于TiO₂/SiO₂复合气凝胶1000 ℃处理后高的比表面积和小的颗粒尺寸. 优良的耐热性能、力学性能和光催化性能使获得的具有核/壳纳米结构的TiO₂/SiO₂复合气凝胶在光催化领域具有良好的应用前景.     

纳米SiO_2颗粒表面修饰的有机分子在介质中的光物理行为研究

利用Sol-Gel方法投篮了单分散性很好的球型二氧化硅纳米颗粒，通过表面化 学修饰法引入了带有荧光发色团的有机分子，通过稳态光物理方法研究了纳米颗粒 表面的有机分子在水、乙醇以及阴、阳离子表面活性剂悬浮液中的光物理行为。实 验表明，纳米颗粒表面有机分子的分散状态是决定其光物理行为的主要因素。这一 结果为设计和开发新型“壳-核”型纳米二氧化硅荧光传感器提供了有用的参考。     

十七氟癸基修饰的有机-无机杂化二氧化硅膜材料的制备及气体分离性能

以十七氟癸基三乙氧基硅烷(PFDTES)和1,2-双(三乙氧基硅基)乙烷(BTESE)为前驱体, 通过溶胶-凝胶法制备了十七氟癸基修饰的SiO₂溶胶, 采用浸渍提拉法在γ-Al₂O₃/α-Al₂O₃多孔陶瓷支撑体上涂膜, 然后在N₂气氛保护下烧结成完整无缺陷的有机-无机杂化SiO₂膜. 利用扫描电子显微镜对膜材料的形貌进行观察, 通过动态光散射技术对溶胶粒径及分布进行测试, 利用视频光学接触角测量仪、 红外光谱仪和热分析仪表征了十七氟癸基修饰对有机-无机杂化SiO₂膜疏水性的影响. 结果表明, 十七氟癸基已经成功修饰到SiO₂膜材料中, 且随着PFDTES加入量的增大, 溶胶粒径和膜材料对水的接触角不断增大. 当n(PFDTES): n(BTESE)=0.25: 1时, 溶胶粒径分布较窄, 平均粒径为3.69 nm, 膜材料对水的接触角为(112.0±0.4)º. 在修饰后的有机-无机杂化SiO₂膜中H₂的输运遵循微孔扩散机理, 在300℃时, H₂的渗透率达到5.99×10^-7 mol·m^-2·Pa^-1·s^-1, H₂/CO和H₂/CO₂的理想分离系数分别达到9.54和5.20, 均高于Knudsen扩散的理想分离因子, 表明膜材料具有良好的分子筛分效应.     

单分散SiO2纳米颗粒复合凝胶电解质的应用

以单分散程度较高的SiO₂纳米颗粒(约130 nm)作为填料,聚偏氟乙烯-六氟丙烯(PVDF?HFP)作为聚合物基质,采用简便的物理共混法制备出了一种单分散SiO₂纳米颗粒复合凝胶聚合物电解质(MCGPEs)并将其应用于锂电池中。扫描电镜结果表明,SiO₂纳米颗粒在聚合物基体中分散均匀。与传统凝胶聚合物电解质(GPEs)和商业SiO₂颗粒复合凝胶电解质(CGPEs)相比,MCGPEs有着更高的电解液吸液能力和离子电导率,并且具备更强的锂离子迁移能力。此外,使用MCGPEs作为电解质的锂电池,在1.0C下历经300次循环后仍然保持了121.1 mAh·g^-1的较高比容量,表现出了优异的循环性能。同时,其倍率性能也十分优异,在10C倍率下获得了135 mAh·g^-1的比容量,远高于GPEs锂电池(76.2 mAh·g^-1)。     

在无机SiO2纳米粒子存在下的苯丙乳液共聚合

研究了在无机SiO₂纳米粒子存在下的苯丙乳液共聚合.选择了能使苯丙乳液稳定存在的乳化剂体系,研究了温度和SiO₂的加入对聚合过程转化率的影响,结果表明,SiO₂的加入对聚合过程有阻聚作用,使单体的转化率降低.SEM照片证明SiO₂粒子已经进入苯丙乳液粒子中,而且SiO₂的加入对乳液制成的膜断面形态有一定影响.实验发现在无机SiO₂纳米粒子存在下,苯丙乳液共聚合时有较多残渣出现,对此通过改进乳液聚合进行了有效地改善.同时对制成的复合材料进行了力学性能和热学性能的测定.     

SiW11掺杂二氧化硅纳米纤维(SiW11/SiO2)的制备及对拟南芥叶中多胺的萃取分析

采用静电纺丝技术制备了SiW₁₁掺杂的二氧化硅纳米纤维(SiW₁₁/SiO₂)材料, 其中掺杂的SiW₁₁质量占纤维质量的7.83%, 制备的SiW₁₁/SiO₂材料尺寸均一, 在考察的pH范围内带负电, 与未掺杂SiW₁₁的二氧化硅纳米纤维相比, SiW₁₁/SiO₂材料表现出强阳离子交换作用, 能有效萃取尸胺和腐胺. 在最优条件下, 建立了注射器分散固相萃取(In syringe dSPE)-超高效液相色谱-串联质谱联用(UHPLC-MS/MS)检测拟南芥样品中多胺的方法. 结果表明, 尸胺和腐胺分别在10~1000和20~1000 ng/mL浓度范围内具有良好的线性关系(R²≥0.9950), 检出限和定量限分别为0.5~0.9和1.6~3.0 ng/mL. 将该方法应用于拟南芥样品中尸胺和腐胺的检测, 加标回收率在87.5%~111.3%之间, 相对标准偏差RSD<5.0%. 建立的SiW₁₁/SiO₂制备方法解决了多金属氧酸盐(POM)在修饰改性过程中存在的制备繁琐、 固载量少的问题, 拓宽了POM在分离领域中的应用.     

具有不对称孔道结构的小介孔二氧化硅粒子的合成及其高分子杂化膜的构建

利用手性阴离子酸表面活性剂, 采用软模板法制备了具有不对称孔道结构的小介孔二氧化硅(SiO₂)粒子. 将小介孔SiO₂粒子引入聚偏四氟乙烯(PVDF)和聚酰亚胺(PI)中构建了两种有机/无机杂化膜. 利用傅里叶变换红外光谱(FTIR)、 透射电子显微镜(TEM)、 扫描电子显微镜(SEM)和比表面积分析等表征了小介孔SiO₂粒子和有机/无机杂化膜的微结构, 并通过超滤实验和气体渗透实验分别考察两种杂化膜的性能. 研究结果表明, 表面含有大量亲水基团的小介孔SiO₂粒子具有规则有序排列的孔道结构, 该孔道结构呈现螺旋扭曲和不对称性. 构建的两种有机/无机杂化膜的极性显著提升, 进而有效增强了PVDF杂化膜的膜通量和抗污染性能及PI杂化膜对CO₂气体的分离性能, 克服了高分子膜的博弈效应(Trade-off效应). 另外, SiO₂的小介孔孔道还可以在PI杂化膜中引入优先通过CO₂分子的限域传质通道, 加速了CO₂气体在杂化膜中扩散. 但过多小介孔SiO₂粒子的加入导致其在高分子基质中团聚, 削弱杂化膜的极性和亲水性, 从而降低了两种杂化膜的分离性能.     

曝光强度对卤化银微晶中载流子行为及其陷阱效应的影响

针对卤化银感光材料潜影形成过程中光作用动力学问题,分析了曝光强度对光生载流子行为和电子陷阱效应的影响,认为伴随着曝光强度的增加,影响光电子衰减的因素由电子陷阱起主要作用演化到电子陷阱和复合中心共同起作用进而演化到复合中心起主要作用.     

Computer simulation of excess electron capture in irradiated media

A stochastic simulation technique has been proposed to study the electron localization in pre-existing traps in irradiated media. The electron capture by a trap was modelled by the multiphonon mode of dissipation of excess electron energy. The different capture probabilities were assigned to the traps of different depth. The simulation is performed in two stages. The first stage includes two competitive processes: the geminate recombination of electron with the positive parent ion and the electron capture by the pre-existing traps. In the second stage the occupied trap relaxation is simulated.As results of the simulation, the kinetics of the electron recombination and trapping as well as the time-dependent distributions of energy of the trapped electrons have been obtained for a model polar system at low temperature. The latter distribution can be converted into the optical absorption spectrum of trapped electrons. Thus, the proposed simulation method opens new possibilities for studying the primary electron localization in irradiated condensed media.     

Chemistry at corners and edges: generation and adsorption of H atoms on the surface of MgO nanocubes

We used UV light to generate site-selective O- hole centers at three-coordinated corner oxygen sites on MgO nanocubes. These highly reactive O- radicals split H2 homolytically and, in the course of this reaction, become hydroxylated and produce hydrogen atoms. The hydrogen atoms adsorb predominantly at cube edges and dissociate into surface-trapped electrons and protons. We propose that the experimentally observed (H+)(e-) centers are formed adjacent to the hydroxyl groups generated in the homolytic splitting process and can be defined as (H+)3C...(e-)(H+)NC centers where 3C and NC refer to the coordination numbers of the corresponding hydroxylated oxygen sites. Our ab initio embedded cluster calculations reveal that the electronic properties of (H+)3C...(e-)(H+)4C centers situated along MgO nanocube edges are consistent with both the electron-paramagnetic-resonance signal parameters and the reported optical-absorption properties. The transformation of corner O- centers into the (H+)3C...(e-)(H+)NC-type centers prevents their recombination with electronic surface centers and, hence, significantly alters the electronic structure of MgO nanocubes by introducing shallow electron traps.     

硫增感AgBr I T颗粒乳剂光电子行为研究

本文利用微波吸收相敏检测技术,同时获得了硫增感AgBrIT颗粒乳剂,在不同增感条件下自由光电子和浅俘获光电子的时间衰减曲线,分析了不同的硫增感产物的陷阱效应.结果表明:开始时,增感产物起电子陷阱作用,至45 min时,浅电子陷阱作用最佳.如增感时间进一步增加,硫增感产物将变为深电子陷阱.本文还讨论了浅电子陷阱中浅俘获光电子衰减时间与阱深的依存关系.     

Electronic excitation of the surface of UV-irradiated solids in heterogeneous recombination of hydrogen atoms

The reaction energy transfer to electrons and release of electrons from traps under the action of the recombination of H atoms on the surface of light-sum-storing crystals (Zn₂SiO₄–Mn, ZnS, ZnS,CdS–Ag) was studied. This effect is associated with the reaction energy accommodation via the electronic channel. The transfer of electronic excitations to the atomic recombination event is independent of the reaction rate, but depends on the electron transition energy in a solid. The possibility of electronic excitation per heterogeneous recombination event of H atoms increased exponentially as the electron transition energy decreased.     

卤化银乳剂制备中的新型掺杂剂

本文综述了近年来乳剂制备中常用的新型掺杂剂,较详细地介绍了两种能提高光电子利用效率的掺杂剂,即过渡金属络合物浅电子陷阱掺杂剂和羧酸盐(酯)有机空穴陷阱掺杂剂,总结了掺杂剂的选择原则,并举例说明了掺杂剂对乳剂感光度的影响.     

Thermoluminescence and chain-fold morphology in low-density polyethylene

Further thermoluminescence data are presented supporting our earlier suggestion that the electron traps associated with the three peaks in the thermoluminescence glow curve of a low-density polyethylene sample from which absorbed air has been removed are formed by the polymer chains themselves in the chain-fold regions of the samples. These traps are shown to be sensitive to heating of the sample to temperature around its melting point; in particular, the lowest temperature peak disappears if the sample is held at 90°C in vacuum for 5 min. If the sample is maintained in vacuum at room temperature after such treatment, its modified glow curve remains unchanged for a period of at least 7 days; however, if the sample is exposed to air, nitrogen, or argon after such treatment, its gas-free glow curve begins to change within 3 days, evolving toward a three-peak form with the same peak temperatures but with relative intensities different from those observed before heating began. This suggests that the gas molecules “lubricate” the polymer chains, which then begin to move toward new equilibrium configurations. Immersion in n-hexane at room temperature has little effect on the luminescence centers but disables the electron traps. Immersion in fuming nitric acid at room temperature for 2 days appears to destroy the electron traps permanently, as would be expected if the chain folds are digested by the acid; its effect on the luminescence centers is still to be determined.     

Photoinduced adsorption of hydrogen and methane on gamma-alumina. the photoinduced chesorluminescence (PhICL) effect

Adsorption of hydrogen and methane on a preirradiated surface of gamma-Al2O3 produces an afterglow, which has been described as a photoinduced chesorluminescence (PhICL), whose spectral features identify with the intrinsic photoluminescence of alumina. The emission spectrum consists of at least four overlapping single emission bands. For methane adsorption, the PhICL phenomenon is seen only if the solid is preirradiated in the presence of oxygen. Emission decay kinetics of the PhICL effect for gamma-Al2O3 reveal two wavelength regimes: a short wavelength regime at lambda = 300-370 nm (decay time tau = 1.1 +/- 0.2 s; signal width = 2.8 s), and a longer wavelength regime at lambda = 380-700 nm (decay time tau = 2.1 +/- 0.1 s; signal width = 4.3 s). A model is proposed in which there exist two different emission centers and, thus, two different pathways for emission decay. In the first, emission originates with electron trapping by such deep energy traps as anion vacancies {e- + Va --> F+ + hv1} to yield electron F-type color centers, whereas in the second, emission originates from electron/trapped hole recombination {e- + Os*- --> Os2- + hv2}. The first common step of the pathways is homolytic dissociative chemisorption of hydrogen and methane upon interaction with surface-active hole centers Os*-, produced upon preirradiation of alumina, to give atomic hydrogen H* and methyl radicals CH3*. Thermoprogrammed desorption spectra of photoadsorbed or postsorbed oxygen show that adsorbed oxygen interacts with atomic hydrogen and methyl radicals. The products of thermodesorption were H2O for hydrogen and H2O, CO2, and CH3CH3 for methane. The Solonitsyn memory effect coefficient was also evaluated for oxygen photoadsorption.     

Illumination intensity dependence of the photovoltage in nanostructured TiO2 dye-sensitized solar cells

The open-circuit voltage (V(oc)) dependence on the illumination intensity (phi0) under steady-state conditions in both bare and coated (blocked) nanostructured TiO2 dye-sensitized solar cells (DSSCs) is analyzed. This analysis is based on a recently reported model [Bisquert, J.; Zaban, A.; Salvador, P. J. Phys. Chem. B 2002, 106, 8774] which describes the rate of interfacial electron transfer from the conduction band of TiO2 to acceptor electrolyte levels (recombination). The model involves two possible mechanisms: (1) direct, isoenergetic electron injection from the conduction band and (2) a two-step process involving inelastic electron trapping by band-gap surface states and subsequent isoenergetic transfer of trapped electrons to electrolyte levels. By considering the variation of V(oc) over a wide range of illumination intensities (10(10) < phi0 < 10(16) cm(-2) s(-1)), three major regions with different values of dV(oc)/d phi0 can be distinguished and interpreted. At the lower illumination intensities, recombination mainly involves localized band-gap, deep traps at about 0.6 eV below the conduction band edge; at intermediate photon fluxes, recombination is apparently controlled by a tail of shallow traps, while, for high enough phi0 values, conduction band states control the recombination process. The high phi0 region is characterized by a slope of dV(oc)/d log phi0 congruent with 60 mV, which indicates a recombination of first order in the free electron concentration. The study, which was extended to different solar cells, shows that the energy of the deep traps seems to be an intrinsic property of the nanostructured TiO2 material, while their concentration and also the density ([symbol: see text]t approximately 10(18)-10(19) cm(-3)) and distribution of shallow traps, which strongly affects the shape of the V(oc) vs phi0 curves, change from sample to sample and are quite sensitive to the electrode preparation. The influence of the back-reaction of electrons from the fluorine-doped tin oxide (FTO) conducting glass substrate with electrolyte tri-iodide ions on the V(oc) vs phi0 dependence characteristic of the DSSC is analyzed. It is concluded that this back-reaction route can be neglected, even at low light intensities, when its rate (exchange current density, j0), which can vary over 4 orders of magnitude depending on the type of FTO used, is low enough (j0 < or = 10(-8)A cm(-2)). The comparison of V(oc) vs phi0 measurements corresponding to different DSSCs with and without blocking of the FTO-electrolyte contact supports this conclusion.     

Influence of surface area on charge transport and recombination in dye-sensitized TiO2 solar cells

The dependence of the electron transport and recombination dynamics on the internal surface area of mesoporous nanocrystalline TiO2 films in dye-sensitized solar cells was investigated. The internal surface area was varied by altering the average particle size in the films. The scaling of the photoelectron density and the electron diffusion coefficient at short circuit with internal surface area confirms the results of a recent study (Kopidakis, N.; Neale, N. R.; Zhu, K.; van de Lagemaat, J.; Frank, A. J. Appl. Phys. Lett. 2005, 87, 202106) that transport-limiting traps are located predominately on the surfaces of the particles. The recombination current density was found to increase superlinearly (with an exponent of 1.40 +/- 0.12) with the internal surface area. This result is at odds with the expected linear dependence of the recombination current density on the surface area when only the film thickness is increased. The observed scaling of the recombination current density with surface area is consistent with recombination being transport-limited. Evidence is also presented confirming that photoinjected electrons recombine with redox species in the electrolyte via surface states rather than from the TiO2 conduction band.