C+离子注入Si单晶形成SiC埋层中Si2p的特征能量损失谱

利用metal vapor vacuum arc离子源产生的C⁺离子，注入单晶Si衬底，得到了SiC埋层.利用X射线光电子能谱，研究了SiC埋层中Si2p的特征能量损失谱.结果表明：Si2p的特征能量损失谱依赖于SiC埋层中C原子的浓度分布，并且与SiC埋层的有序度对应. 关键词：     

离子注入形成SOI结构的界面及埋层的俄歇能谱研究

本文中研究了O⁺(200keV,1.8×10¹⁸/cm²)和N⁺(190keV,1.8×10¹⁸/cm²)注入Si形成SOI(Silicon on Insulator)结构的界面及埋层的化学组成。俄歇能谱的测量和研究结果表明:注O⁺的SOI结构在经1300℃,5h退火后,其表层Si和氧化硅埋层的界面存在一个不饱和氧化硅状态,氧化硅埋层是由SiO₂相和这不饱和氧化硅态组成,而且氧化硅埋层和体硅界面不同于表层Si和氧化硅埋层界面;注N⁺的SOI结构在经1200℃,2h退火后,其氮化硅埋层中存在一个富N的疏松夹层,表层Si和氮化硅埋层界面与氮化硅埋层和体硅界面性质亦不同。这些结果与红外吸收和透射电子显微镜及离子背散射谱的分析结果相一致。还对两种SOI结构界面与埋层的不同特征的原因进行了分析讨论。 关键词：     

SiC埋层的制备及其红外吸收特性

采用metal vapor vacuum arc离子源的离子束合成方法，对单晶Si衬底注入C^＋离子，获得不同剂量下的SiC埋层．C^＋离子束的引出电压为50kV，注入的剂量为3.0×10¹⁷—1.6×10¹⁸cm^-2．通过红外吸收谱的测试和分析，表明SiC埋层的结晶程度依赖于剂量的大小．研究证实，可以在较低的平均衬底温度下（低于400℃）得到含立方相结构的SiC埋层． 关键词：     

Na/Si(111)3×1表面的NEXAFS研究

利用同步辐射光源测量Na2s二次电子部分产额谱得到Na诱导Si（111）3×1结构的近边Ｘ射线吸收精细结构（NEXAFS）谱，并用原子集团多重散射方法对几种可能的模型进行计算，与实验结果比较，认为Na/Si（111）3×1吸附结构与Mnch模型相一致．Na原子吸附在Si的顶位，Na—Si键长为0.3nm． 关键词：     

SiCOH低介电常数薄膜的性质和键结构分析

以十甲基环五硅氧烷为反应源、采用电子回旋共振等离子体化学气相沉积（ECR_CVD）方法制备了具有低介电常数，且电绝缘性能和热稳定性优良的SiCOH薄膜. 通过对富氏变换红外光谱(FTIR)的分析，比较了反应源和薄膜键结构的差异，证实薄膜中一方面保持了源中由Si—O—Si键构成的环结构，另一方面形成了由大键角Si—O—Si键构成的鼠笼式结构，在沉积过程中失去的主要是侧链的—CH3基团. 薄膜经过400℃热处理后，其介电常数由385降低到285，对其FTIR谱的分析指出，薄膜中鼠笼式结构比例的增加可能是薄膜介电常数降低的原因. 关键词： 低介电常数 SiCOH薄膜 化学键结构     

MnxSi1-x磁性薄膜的结构研究

利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的MnxSi1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8%和17%)样品中存在着Mn4Si7化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的MnxSi1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn4Si7模型计算出的理论XANES谱才能够很好的重构出MnxSi1-x样品的实验XANES谱.这些研究结果说明在MnxSi1-x样品中,Mn原子主要是以镶嵌式的Mn4Si7化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子.     

(Fe1-xNix)2P电子结构与磁学特性的X射线近边吸收谱研究

利用X射线近边吸收谱对Fe₂P,Ni₂P及其掺杂物(Fe_1-xNi_x)₂P(x=01,025,05)中Fe,Ni,P的K边进行了研究.结合多重散射理论近边计算,讨论了金属原子不同位置格点3f,3g对近边谱特征的贡献,得出当Ni原子取代Fe原子时将优先占据Fe(3f)格点位置;根据第一性原理对能态的计算发现,不考虑磁性时不同格点P的pDOS未占据态电子结构与P-K近边吸收谱实验相符合;与考虑铁磁性Fe₂P 的DOS相比较后结果显示Fe₂P的磁性主要来源于Fe(3g)格点,铁磁性Ni₂P计算的Ni不同格点原子磁矩均接近于0,与它一般显顺磁性结论相一致. 关键词： X射线近边吸收谱 电子结构 多重散射理论 态密度     

锰硅化物的固相反应生长研究

报道了利用固相反应方法在单晶Si(100)衬底上制备锰硅化物薄膜.实验发现,样品在固相反应过程中经历了两种相转变,即反应温度为450℃时形成了立方相MnSi,达到550℃时形成了四方相MnSi1.73.随着反应温度的提高,薄膜呈现取向生长.利用四探针法对固相反应过程中化合物薄层方块电阻的原位测量表明,立方相开始形成的温度约为410℃,由立方相向四方相转变的起始温度约为530℃.红外透过谱测量得到了不同结构相的红外吸收特征峰.     

锰硅化物的固相反应生长研究

报道了利用固相反应方法在单晶Si(100)衬底上制备锰硅化物薄膜.实验发现,样品在固相反应过程中经历了两种相转变,即反应温度为450℃时形成了立方相MnSi,达到550℃时形成了四方相MnSi173.随着反应温度的提高,薄膜呈现取向生长.利用四探针法对固相反应过程中化合物薄层方块电阻的原位测量表明,立方相开始形成的温度约为410℃,由立方相向四方相转变的起始温度约为530℃.红外透过谱测量得到了不同结构相的红外吸收特征峰     

射频溅射法制备3C-SiC和4H-SiC薄膜

利用射频溅射法在Si衬底上制备了SiC薄膜，并利用x射线衍射（XRD）和红外（IR）吸收谱对薄膜的结构、成分及化学键合状态进行了分析.XRD结果表明，低温制备的SiC薄膜为非晶相，而在高温下（＞800℃），薄膜呈现4HSiC和3CSiC结晶相.IR谱显示，溅射制备薄膜的吸收特性主要为Si—C键的吸收.此外，还利用原子力显微镜对薄膜的表面形貌进行了研究，并研究了样品的场发射特性. 关键词： 射频溅射 SiC薄膜 结构 表面形貌 场发射     

Structural and optical properties of amorphous hydrogenated silicon carbonitride films produced by PECVD

Amorphous hydrogenated silicon carbonitride thin films (a-Si:C:N:H), deposited by plasma enhanced chemical vapour deposition (PECVD) using hexamethyldisilazane (HMDSN) as monomer and Ar as feed gas, have been investigated for their structural and optical properties as a function of the deposition RF plasma power, in the range of 100-300 W. The films have been analysed by Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), UV-vis-NIR spectrophotometry and atomic force microscopy (AFM). From the analysis of the FT-IR spectra it results that the films become more amorphous and inorganic as RF plasma power increases. The incorporation of oxygen in the deposited layers, mainly due to the atmospheric attack, has been evaluated by XPS and FT-IR spectroscopy. Reflectance/transmittance spectra, acquired in the range of 200-2500 nm, allow to descrive the film absorption edge for interband transitions. A relationship between the optical energy band gap, deduced from the absorption coefficient curve, and the deposition RF plasma power has been investigated. The reduction of the optical energy gap from 3.85 to 3.69 eV and the broadening of the optical absorption tail with RF plasma power increasing from 100 to 300 W are ascribed to the growth of structural disorder, while the increase of the refractive index, evaluated at 630 nm, is attributed to a slight densification of the film. The AFM analysis confirms the amorphous character of the films and shows how the deposited layers become rougher when RF plasma power increases. The wettability of the film has been studied and related to the chemical composition and to the morphology of the deposited layers.     

利用红外光谱仪快速测量塑料薄膜厚度

通过对塑料薄膜红外光谱的研究,得到了快速定量无损伤测量塑料薄膜厚度的方法:记录不同厚度的同种塑料薄膜傅里叶变换红外(FT-IR)光谱,应用朗伯-比尔定律,结合红外光谱分析法作出塑料薄膜的厚度与特征峰吸光度的工作曲线,从而快速、准确、无损伤地测量薄膜的厚度.同时建立了特征峰吸光度与厚度线性关系的数学模型,并对此种模型进行了验证.     

离子注入/辐照引起Al2O3单晶的改性研究

600K温度下用110keV的He^＋,Ne^＋,Ar^＋离子注入及320K温度下用230MeV的^208Pb^27＋辐照Al2O3单晶样品,研究了离子注入和辐照对Al2O3单晶样品结构和光学特性的影响。从测得的光致发光谱可以清楚地看到,所有样品在波长为375,413和450nm处出现了强的发光峰。且所有5×10^16ion／cm^2注入样品的发光峰均最强。经过高能Pb辐照后的样品,在390nm处出现了新的发光峰。透射电镜分析发现在注入氖样品100nm入射深度以内形成了高浓度的小空洞（1-2nm）,在Ne沉积区域有少量大空洞形成。傅立叶变换红外光谱分析发现,波数在460-510cm^-1间的振动吸收带经过离子辐照后展宽,随着辐照量的增大,该振动吸收强度显著减弱。1000—1300cm^-1对应Al-O-Al桥氧伸缩振动模式的吸收带,辐照后向高波数方向移动。对离子注入和辐照对Al2O3单晶样品结构损伤机理进行了初步探讨。Single crystal sapphire （Al2O3 ） samples were implanted at 600 K by He, Ne and Ar ions with energy of 110 keV to doses ranging from 5 × 10^16 to 2× 10^17 ion/cm^2 or irradiated at 320 K by ^208Pb^27＋ ion with energy of 1.1 MeV/u to the fluences ranging from 1 × 10^12 to 5 × 10^14 ion/cm^2. The modification of structure and optical properties induced by ion implantation or irradiation were analyzed by using photoluminescence（PL） and Fourier transformation infrared spectrum（FIR） spectra and transmission electron microscopy（ TEM ） measurements. The PL measurements showed that absorption peaks located at 375,413 and 450 nm appeared in all the implanted or irradiated samples, the PL intensities reached up to the maximum for the 5 × 10^16 ion/cm^2 implanted samples. After Pb-ion irradiation, a new peak located at 390 nm formed. TEM analyses showed that small size voids,（ 1--2 nm） with high density were formed in the region from the surface till to about 100 nm in depth and also large size Nebubble formed in the Ne-doped region. From the obtained FTIR spectra, it was found that Pb-ion irradiation induced broadening of the absorption band in 460-510 cm^-1 and position shift of the absorption band in 1 000- 1 300 cm^- 1 towards to high wavenumber. The possible damage mechanism in single crystal sapphire induced by energetic ion implantation or irradiation was briefly discussed.     

紫外脉冲激光退火发次对KDP晶体抗损伤性能的影响

在R-on-1的辐照模式下, 利用355 nm的紫外脉冲激光以低于KH₂PO₄ (KDP)晶体零概率损伤阈值的通量对其进行不同发次的全域扫描, 目的是为了研究KDP晶体在接受不同发次的紫外激光辐照后其抗损伤能力的变化规律及机制. 辐照后的1-on-1损伤测试表明, 适当的紫外激光退火可以有效地提升KDP晶体的抗损伤能力, 提升的幅度与其接受激光扫描的次数有关. 通过荧光和紫外吸收检测深入探讨了晶体内缺陷对激光退火的影响, 结果表明: 紫外脉冲激光辐照后KDP 晶体内的氧空位电子缺陷的存在与否是导致其抗损伤能力变化的主要原因; 通过拉曼和红外光谱的测量表明, 辐照后KDP 晶体内的PO₄, P–OH和P＝O基团的极化变形也导致了其抗损伤能力的改变. 关键词： 激光退火 荧光 拉曼 红外     

Synthesis of metallic silicide fullerenes and the characteristics thereof by mass spectrometry

Direct current arc discharge is used for the study on the synthesis of metallo-fullerenes (MFs) to discover whether there exist metallic silicide fullerenes and silicon fullerenes. The resultant components are isolated by the multistage high-performance liquid chromatography (HPLC) and analyzed with the Time-of-Flight (TOF) mass spectrometry. Results show that there exist fullerenes such as SiC69, YSi2C64, YSi2C78, Y3Si2C78 as well as Y2Si2C90 which are structurally similar to (Y2C2)@C82.     

Formation of silver nanoclusters in transparent polyimides by Ag-K ion-exchange process

Silver nanoclusters embedded in two transparent fluorinated polyimides, 4,4'-hexafluoroisopropylidene diphthalic anhydride – 2,3,5,6-tetramethyl paraphenylene diamine (6FDA-DAD) and 3,3',4,4' – biphenyltetracarboxylic acid dianhydride – 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane (BPDA-3F), have been produced by surface modification with KOH aqueous solution followed by K-assisted Ag doping and thermal reduction in hydrogen atmosphere. The reaction rate of the nucleophilic hydrolysis in KOH, studied by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectrometry (RBS), depends on the polyimide chemical structure. After ion-exchange in AgNO₃ solution and subsequent annealing, the polyimide structure recovery was monitored by FT-IR whereas the characteristic surface plasmon absorption band of silver nanoparticles was evidenced by optical absorption measurements. The structure of silver nanoclusters as related to size and size distribution in the different polyimide matrices was thoroughly investigated by Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The collected data evidenced a uniform distribution of Ag clusters of nanometric size after thermal treatment at 300 ^○C in both polyimides. For the same ion-exchange treatment parameters and annealing temperature, XRD analyses evidenced the presence of crystallites with similar sizes.     

Structural modification of poly(methyl methacrylate) by proton irradiation

A general survey is presented on the structural modification of poly(methyl methacrylate) (PMMA) by proton implantation. The implanted PMMA films were characterized by FT-IR attenuated total reflection (FT-IR ATR), Raman, Rutherford backscattering spectroscopy (RBS), gel permeation chromatography (GPC) and surface profiling. The ion fluence of 350 keV protons ranged from 2×10¹⁴ to 1×10¹⁵ ions/cm². The IR and Raman spectra showed the reduction of peaks from the pendant group of PMMA. The change of absorption and composition was observed by UV–VIS and RBS, respectively. These results showed that the pendant group is readily decomposed and eliminated by proton irradiation. The change of molecular weight distribution was also measured by GPC and G-value of scission was estimated to be 0.67.     

基于光谱波段优化选择的FTIR测量与分析

在主动式红外遥感测量中,大气中痕量气体的红外吸收与不同红外波段的透过率光谱有关。在很多情况下,透过率光谱在光谱定量分析中起到重要的作用,因此,对测量和仿真的透过率光谱的波段进行优化选择是定量分析的关键。文章对最佳透过率测量范围进行了理论分析, 得到了对应于待测气体浓度反演相对误差最小的理论最佳透过率值;基于谱线的洛伦兹线型通过计算得到了待测气体分子的吸收截面, 同时给出了透过率光谱的校准训练集;确定了单组分CO₂光谱测量分析的波段,优化了多组分CO, CO₂和N₂O光谱同时测量分析的波段并成功地应用于开放光路光谱仪系统。光谱拟合分析结果表明,测量光谱与参考光谱得到了很好的拟合,拟合均方根误差小于1%。     

A simple sonochemical approach for synthesis and characterization of Zn2SiO4 nanostructures

Zn₂SiO₄ nanoparticles have been successfully prepared via a simple sonochemical method, for the first time. The effect of various parameters including ultrasonic power, ultrasonic irradiation time and different surfactants were investigated to reach optimum condition. The as-prepared nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmittance electron microscopy (TEM), Fourier transform infrared (FT-IR) spectra and energy dispersive X-ray microanalysis (EDX). The photocatalytic activity of Zn₂SiO₄ nano and bulk structures were compared by degradation of anionic dye methyl orange in aqueous solution under UV-light irradiation. Moreover, the cyclic voltammetry analysis of Zn₂SiO₄ nano and bulk structures were investigated.     

自然老化谷类种子的二维红外光谱研究

种粮老化影响种子活力及粮食品质。利用傅里叶变换红外光谱(FT-IR),二阶导数红外光谱(SD-IR)和二维相关红外光谱(2D-IR)方法对不同储藏年份的大麦,小麦,稻谷,玉米和高粱种子进行区分研究。结果显示,原始光谱中几个峰强比有差异;在二阶导数红外光谱中,不同储藏年份种子在1 800～800 cm-1范围内的吸收峰强度和形状显示出差异。二维相关红外光谱结果显示：大麦在1 350～1 800 cm-1,小麦,稻谷,玉米和高粱在860～1 690 cm-1范围内有明显差异,随储藏年份增加,自动峰和交叉峰的数目减少,强度减弱。结果表明,应用傅里叶变换红外光谱结合二维相关红外光谱能有效快速地区分不同储藏年份的谷类种子。