富镧混合稀土-镍贮氢材料CO,O_2和H_2O中毒的表面特征

本文用UPS,XPS研究了贮氢材料MlNi_5(Ml=La,Ce,Pr,Nd)的CO,O_2和H_2O的中毒,在UPS谱中,我们观察到在E_F以下峰α(0.3eV)和峰b(1.2eV)强度随中毒气体暴露量增加有显著变化,并向低动能端位移,逐渐形成肩峰,与此同时,峰c(6eV)和峰d(9.5eV)的强度随暴露量增加而增加,并有能量位移,配合XPS分析,分别确定相应的化学态。氧中毒后的MlNi_5,经300℃加氢还原,从UPS谱可以看到峰α,b强度增加;H_2O和CO中毒后,在超高真空条件下,分别经300℃加热处理,和Ar~ 剥离方法,均获得类似的效果,XPS分析进一步证实了这些结果。 实验给出了贮氢材料MlNi_5中过渡金属镍的d电子与气体自由分子轨道间电荷转移的信息,为在实际应用中认识此类贮氢合金的表面催化中毒和再生提供了依据。     

LaNi5的硫化物中毒及其再生的表面研究

本文概括了氢气中的硫化物(如H₂S,SO₂和CS₂)对LaNi₅的表面中毒和再生。AES,XPS的分析表明,三种硫化物的中毒性质不同:H₂S中毒产生La₂S₃和NiS这样的表面化合物;SO₂和CS₂中毒分别发生化学吸附和物理吸附。此外,从Ni(2P_3/2)谱峰强度变化,表明了在LaNi关键词：     

[1ChCl∶2EG]/CrCl3·6H2O离子液体中Cr(Ⅲ)配合物的研究

利用电喷雾质谱(ESI-MS)和紫外-可见吸收光谱(UV-Vis)分析,研究了CrCl₃·6H₂O 浓度为0.1～0.6 mol·L-1的水溶液和[1ChCl∶2EG]/CrCl₃·6H₂O ILs中,Cr(Ⅲ)配合物的存在形式。研究结果表明,在含有CrCl₃·6H₂O的溶液中,Cr(Ⅲ)与Cl-和H₂O形成[Cr(H₂O)_nCl_6-n]n-3配合物,其配合物的优势物种受CrCl₃·6H₂O浓度的影响。水溶液中Cr(Ⅲ) 的优势配合物为[Cr(H₂O)₆]3+与[Cr(H₂O)₅Cl]2+,并随CrCl₃·6H₂O浓度增加,水溶液的UV-Vis吸收光谱峰红移,[Cr(H₂O)₅Cl]2+的相对含量增加。而[1ChCl∶2EG]/CrCl₃·6H₂O ILs中的优势配合物为[Cr(H₂O)₂Cl₄]-和[Cr(H₂O)₃Cl₃],且随CrCl₃·6H₂O 浓度增加,溶液的颜色从浅橙红色逐渐变为深绿色,溶液的UV-Vis吸收光谱峰蓝移,[Cr(H₂O)₃Cl₃]的相对量增加。说明CrCl₃·6H₂O的浓度变化,将影响配体Cl-和H₂O与Cr(Ⅲ)配位结合的配位数,从而影响配合物优势物种的相对量。     

WO3表面的氧缺陷

用不同能量的Ar⁺和H⁺轰击WO₃表面,观察到W_4f峰的位移和加宽。通过谱分解处理得到相应于W_4f电子的W⁶⁺,W⁴⁺和W⁰3个不同的双峰。用表面产生氧缺陷的机理解释了还原过程。UPS谱显示出氧缺陷的存在增加了靠近费密能级处的态密度。H₂O的吸附结果说明WO₃表面的活性与W^{5+< 关键词：}     

(H2O)6的稳定结构及异构过程研究

(H₂O)₆是形成三维立体结构的最小水分子团簇并具有能量较低的多个稳定异构体.本文利用从头计算方法研究了各稳定结构的异构化过程.(H₂O)₆的环状结构与最稳定结构的能量差0.31 eV为一个氢键的键能.水分子团簇的异构化是分子间氢键打开或重组的过程,不同异构体之间的转化每次只涉及一个氢键的打开或重组,异构化的能垒高度在0.07—0.21 eV之间. 关键词： 水分子团簇 2O)₆')" href="#">(H₂O)₆ 异构化过程 从头计算     

3Cu(IO3)2·2H2O晶体的电子结构研究

本文测定了3Cu(IO₃)₂·2H₂O球晶的电子吸收光谱,吸收峰位于9140cm^-1和15250cm^-1。首次观察到了高达6110cm^-1的低对称晶场分裂。吸收曲线经Gauss分解可得到八个Gauss型吸收峰,分别位于8590,10690,10870,12190,13500,14510,15330和16500cm^-1。测量其EPR谱可得g=2.141±0 关键词：     

基于单一量子级联激光器的大气多组分气体（CO、N2O、H2O）同时测量方法

近红外波段的气体吸收强度低,不利于痕量气体的测量。利用分子在中红外波段的基频吸收特性,使用单个新型室温连续输出量子级联激光器（CW-QCL）结合波长调制光谱技术（WMS）和长程光学吸收池,建立了一套高灵敏度和高精度的大气多组分温室气体同时检测的激光光谱系统。该系统的输出波数范围为2202.8～2205.6 cm^-1,覆盖了CO、N₂O和H₂O的中心吸收谱线。实验测试结果表明：在1 s的时间分辨率下,CO、N₂O和H₂O的测量精度分别为1.83×10^-8,1.86×10^-9,1.19×10^-4;当满足最佳积分时间（100 s）时,系统的最低检测限可以达到1.8×10^-9（CO）,0.16×10^-9（N₂O）,1.5×10^-5（H₂O）。通过长时间测量和分析可知,所提系统部件简单,使用方便,满足大气多组分气体...     

常压MOCVD生长Ga2O3薄膜及其分析

以去离子水(H₂O)和三甲基镓(TMGa)为源材料,用常压MOCVD方法在蓝宝石(0001)面上生长出β-Ga₂O₃薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)以及二次离子质谱(SIMS)实验表征Ga₂O₃外延膜的质量.在X射线衍射谱中有一个强的Ga₂O₃(102)面衍射峰,其半峰全宽(FWHM)为0.25°,表明该Ga₂O₃外延膜是(102)择优取向.在二次离子质谱中除了C、H、O和Ga原子外,没有观测到其他原子.     

水热体系TeO2-K3PO4-H2O中一个新化合物——K2Te4O9·3H2O的合成与结晶

作者用水热法对TeO₂-K₃PO₄-H₂O体系作了初步的合成与结晶尝试。在给定的条件和组成范围内除了能形成TeO₂晶体外,还能生成一种点阵参数为a=b=10.734?,c=21.041?,α=β=90°,γ=120°的三方晶系的化合物γ,其分子式为K₂Te₄O₉·3H₂O。结晶区的产物主要取决于原料的k=TeO₂/K₃PO₄(克分子比:当k≤1.9时,仅生成γ晶体;k≥2.22时,单独生成TeO₂晶体;而当1.92晶体出现,本文还给出了γ晶相的DTA曲线和X射线粉末衍射谱线的相对强度与相应面间距的详细数据。 关键词：     

Photo- and thermostimulated processes in α-Al2O3

We reported on the recombination processes determined by the release of electrons from defects connected with the dosimetric 430 K thermostimulated luminescence (TSL) peak as well as with the 260 K TSL peak. These TSL peaks appear in thermochemically reduced α-Al₂O₃ crystals containing hydrogen and emission of these TSL peaks corresponds to luminescence of the F-center. The X-ray exposure or UV excitation in the absorption band of F-centers at 6.0 eV of reduced α-Al₂O₃ crystals doped with acceptor impurities results in the appearance of a broad anisotropic complex absorption band in the spectral region 2.5–3.5 eV and in the appearance of a predominant TSL peak at 430 K. Above 430 K the above-mentioned broad absorption band disappears. Optical bleaching of the 2.5–3.5 eV band is accompanied by the disappearance of the 430 K TSL peak and results in F-center emission. The X-ray or UV excitation of reduced α-Al₂O₃ crystals with donor-type impurities results in the appearance of an anisotropic absorption band at 4.2 eV and the appearance of a dominant TSL peak at 260 K. Above 260 K the 4.2 eV absorption disappears and photostimulated luminescence (PSL) of the F-center recombination luminescence in the 4.2 eV region is no longer observed. Optical bleaching of the 4.2 eV absorption band is accompanied by the disappearance of the 260 K TSL peak. The successful use of reduced α-Al₂O₃ in dosimetry needs the optimization of the concentration of all components (acceptors, hydrogen, intrinsic defects) involved in the thermo- and photostimulated processes.     

C2H4在Ru(1010)表面吸附与分解的研究

用X射线电子能谱(XPS)、热脱附谱(TDS)和紫外光电子能谱(UPS)方法研究了乙烯(C_{2H4)在Ru(1010)表面的吸附,在低温下(200K以下)乙稀(C2Ｈ4})可以在Ru(1010)表面上以分子状态稳定吸附,在200K以上乙烯(C₂H ₄)则发生了脱氢分解反应.TDS结果表明乙烯(C₂H₄)分 解后的主要产物为乙炔(C< 关键词： 乙烯 钌(1010)表面 吸附与分解     

O2的化学吸附对2H—MoS2(0001)清洁表面和离子溅射表面电子结构的影响

利用低能N⁺(0.5keV)离子轻微轰击2H-MoS₂(0001)清洁表面,从UPS(HeⅠ,HeⅡ)得到d电子峰向E_F移动,价带顶出现明显的“肩膀”或带尾,它随轰击时间的增加而增强,同时使d_(z²)带变宽。UPS的结果表明,这种表面在室温下有明显的O₂吸附活性,O₂吸附后这个肩膀明显下降。结合XPS,AES和LEED的研究,我们认为这个“肩膀”态与次表面原子层的Mo原子的d电子的暴露和最外表面原子层s原子空位缺陷的产生有关。这些新的表面电子态与加氢脱硫(HDS)催化活性中心有密切的关系。 关键词：     

ELECTRONIC STRUCTURE STUDIES OF THE C60 FILM CONDENSED ON 2H-MoS2(0001) SURFACE

The electronic structure and vibrational spectrum of the C₆₀ film condensed on a 2H- MoS₂(0001) surface have been investigated by X-ray photoelectron spectroscopy (XPS), ul-traviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES) and infrared high-resolution electron-energy-loss spectroscopy (HREELS). AES analysis showed that at low energy side of the main transition, C₆₀ contains a total of three peaks just like that of graphite. However, the energy position of the KLL main Auger transition of C₆₀ looks like that of diamond, indicating that the hybridization of the carbon atoms in C₆₀ is not strictly in sp²- bonded state but that the curvature of the molecular surface introduces some sp²pz- bonded character into the molecular orbitals. XPS showed that the C 1s binding energy in C₆₀ was 285.0eV, and its main line was very symmetric and offered no indication of more than a single carbon species. In UPS measurement the valence band spectrum of C₆₀ within 10eV below the Fermi level (E_F) shows a very distinct five-band structure that character-izes the electronic structure of the C₆₀ molecule. HREEL results showed that the spectrum obtained from the C₆₀ film has very rich vibrational structure. At least, four distinct main loss peaks can be identified below 200 meV. The most intense loss was recorded at 66 meV, and relatively less intense losses were recorded at 95, 164 and 197meV at a primary energy of electron beam E_P = 2.0eV. The other energy-loss peaks at 46, 136, 157 and 186meV in HREEL spectrum are rather weak. These results have been compared to infrared spectrum data of the crystalline solid C₆₀ taken from recent literatures.     

UPS and XPS studies of the chemisorption of O2, H2 AND H2O on reduced and stoichiometric SrTiO3(111) surfaces; The effects of illumination

About one monolayer of Ti³⁺ species is detectable at the surface of reduced SrTiO₃(111) single crystals by XPS and UPS. O₂, H₂ and H₂O have been adsorbed in the dark and the decrease on the concentration of the Ti³⁺ species has been monitored as a function of the gas exposures. Subsequent band gap illumination partially restores the Ti³⁺ initial concentration in the cases of O₂ and H₂ exposures but not in the case of H₂O. The Ti³⁺ photogeneration on the oxygen covered surface is associated with oxygen photodesorption as indicated by XPS and UPS. UPS measurements give evidence for surface hydroxylation resulting from water and hydrogen adsorption. The activity of the stoichiometric SrTiO₃(111) crystal face for O₂ and H₂ adsorption is very low when compared with the reduced SrTiO₃ samples.     

Bi2Sr2CaCu2-xLixOy体系的光电子能谱研究

采用X射线光电子能谱对Bi₂Sr₂CaCu_2-xLi_xO_y体系在真空中获得的清洁表面进行了研究。结果表明:Li的掺入对Bi和Sr的化学键性质几乎没有影响,而Ca,Cu,O的化学键性质有较大的变化,其结合能随着Li含量x的增加向高能方向移动。同时对真空中获得的清洁表面和普通表面样品O1s进行了比较,结果发现真空中获得的清洁样品O1s有一个峰(528.4eV),而普通表面样品O1s有两个峰(528.4eV)和(531eV),这表明O1s的高能峰是由污染产生的。 关键词：     

Valence band states of semi-magnetic semiconductors: Cd1-xMnxTe

Valence band electron states of Cd_1-xMn_xTe mixed crystals were determined over the composition range 0?x?0.7 by ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). A peak at 3.5 eV binding energy (BE) whose magnitude increases with the manganese mole fraction x was identified as originating from the Mn 3d⁵ level. A previously reported structure at 6.5 eV BE was also observed for x>0.4; it is, however, believed to be a satellite of the 3.5 eV peak originating from a shake-up process.     

Photoelectron spectroscopy of nanocrystalline anatase TiO2 films

Nanocrystalline TiO₂ (anatase) films were prepared using either colloidal suspensions or a sol-gel route. The electronic structure of these films was analyzed using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Apart from pristine films, films containing defects introduced by annealing under ultra-high vacuum conditions or by ion bombardment were investigated. Generally, annealing in the temperature range up to 720 K results in no significant changes in the XPS and UPS spectra as compared to the pristine state, indicating that the amount of defect formation is too low to be observable by these techniques. On the other hand, ion irradiation causes the appearance of distinct defect states; these could be identified in agreement with previous data from photoemission studies on rutile and anatase single crystals. From UPS, a valence-band width of ∼4.6 eV was determined for the nanocrystalline anatase films.     

Electron spectroscopic investigations of amorphous and crystallized Fe82B12Si6 (Metglas 2605s)

The electron structure of amorphous and crystallized Fe₈₂B₁₂Si₆ has been investigated by means of UPS, XPS and EELS, with the aim to establish spectral features distinguishing the two phases. Our results show distinct redistribution in the valence density of states, extending several eV below the Fermi level.