掺铁InP肖特基势垒增强InGaAs MSM光电探测器

采用ＬＰ－ＭＯＶＰＥ方法及常规器件工艺制成了ＩｎＰ：Ｆｅ肖特基势垒增强ＩｎＧａＡｓＭＳＭ光电探测器。用自建测试系统对其直流和瞬态特性进行了测试，测试结果表明，器件的击穿电压大于１０Ｖ，２Ｖ偏压下暗电流为１７０ｎＡ，对应的暗电流密度约为３ｍＡ／ｃｍ２；瞬态响应中上升时间ｔｒ为２１ｐｓ，半高宽ＦＷＨＭ为７５ｐｓ。     

低暗电流InGaAs-MSM光电探测器

MSM(金属-半导体-金属)型光电探测器的较低寄生电容和高带宽的特点使得其应用广泛,可用于空间通信、遥感等多方面,但暗电流偏大仍是制约其发展的重要因素.为此,本文研制了100×100μm2面积的InGaAs-MSM光电探测器,通过设计InAlGaAs/InGaAs短周期超晶格和InAlAs肖特基势垒增强结构,将器件暗电流密度降至0.6pA/μm2(5V偏置),改善了目前同类器件的信噪比.对器件光电参数进行了表征:3dB带宽6.8GHz,上升沿58.8ps,1550nm波段响应度0.55A/W,光吸收区域外量子效率88%.分析了短周期超晶格和肖特基势垒增强层对暗电流的抑制机理.     

利用LiF/Al作为电极的有机电致发光器件

本文报道了利用LiF/Al作为负电极的有机电致发光器件,器件结构为ITO/TPD/Alq3/LiF/Al,LiF层的加入增强了电子注入,当其厚度为0.4nm时,器件的性能最好,与单层Al和Mg/Al电极的同类器件相比,此时器件的开启电压由Al电极时的4.3V和Mg/Al电极时的3.0V降低到了2.0V,器件的最大亮度分别由4000cd/m²、14000cd/m²提高到19600cd/m²,器件的发光效率也分别增加了5倍和2倍,达到2.66lm/W.     

偏置电场对聚对苯乙烯激发态弛豫特性的影响

为探讨洞悉电场对有机发光二极管电致荧光量子效率的影响,通过激发-探测超快光谱技术研究了激子在电场下的瞬态行为.与单重态激子相应的激发态在230 μJ/cm2激发强度下,显示了快慢两个弛豫过程. 快慢组分的权重因子及快组分弛豫时间常数是电场相关的, 在6.4×10⁵ V/cm的电场下,与无偏置电场相比,激子的快组分弛豫时间加速,快组分的权重因子由22%增加为72%,约50%的初始激子又通过电场而离解. 慢组分是电场无关的,其弛豫时间常数为890 ps. 实验结果还揭示了由激发光所产生的长程声学声子,其声速为17 /ps.     

0.18 μm部分耗尽绝缘体上硅互补金属氧化物半导体电路单粒子瞬态特性研究

利用脉冲激光入射技术研究100级0.18 μm部分耗尽绝缘体上硅互补金属氧化物半导体反相器链的单粒子瞬态效应, 分析了激光入射器件类型及入射位置对单粒子瞬态脉冲传输特性的影响. 实验结果表明, 单粒子瞬态脉冲在反相器链中的传输与激光入射位置有关, 当激光入射第100级到第2级的n型金属-氧化物-半导体器件, 得到的脉冲宽度从287.4 ps增加到427.5 ps; 当激光入射第99级到第1级的p型金属-氧化物-半导体器件, 得到的脉冲宽度从150.5 ps增加到295.9 ps. 激光入射点靠近输出则得到的瞬态波形窄; 靠近输入则得到的瞬态波形较宽, 单粒子瞬态脉冲随着反相器链的传输而展宽. 入射器件的类型对单粒子瞬态脉冲展宽无影响. 通过理论分析得到, 部分耗尽绝缘体上硅器件浮体效应导致的阈值电压迟滞是反相器链单粒子瞬态脉冲展宽的主要原因. 而示波器观察到的与预期结果幅值相反的正输出脉冲, 是输出节点电容充放电的结果.     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C₆₀异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39 V分别提高到0.58 V、0.55 V,转换效率从0.36%提高到0.44%,短路电流从1.92 mA/cm²分别降低到1.77 mA/cm²、1.81 mA/cm²,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10 nm时,器件短路电流密度减少到0.35 mA/cm².开路电压随着厚度的增加逐渐增加,从1 nm时的0.43 V增加10 nm时0.63 V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

用光激开关产生高功率亚纳秒电脉冲的研究

 报道了用全固态绝缘结构研制的横向型半绝缘GaAs光电导开关产生高功率亚纳秒电脉冲的性能和测试结果。8mm电极间隙的开关暗态绝缘强度达30kV。分别用ns, ps和fs激光脉冲触发开关的测试表明,开关输出电磁脉冲无晃动。3mm电极间隙开关的最短电流脉冲上升时间小于200ps,脉宽达亚ns;在偏置电压2000伏,光脉冲宽度8ns、能量1.2mJ的触发条件下,峰值电流达560A。用重复频率为76MHz和10⁸Hz的光脉冲序列触发开关也获得清晰的电流脉冲序列。     

高性能SOI基GePIN波导光电探测器的制备及特性研究

本文报道了在SOI衬底上外延高质量单晶Ge薄膜并制备高性能不同尺寸Ge PIN波导光电探测器.通过采用原子力显微镜、X射线衍射、拉曼散射光谱表征外延Ge薄膜的表面形貌、晶体质量以及应变参数,结果显示外延Ge薄膜中存在约0.2%左右的张应变,且表面平整,粗糙度为1.12 nm.此外,通过暗电流、光响应度以及3 dB带宽的测试来研究波导探测器的性能,结果表明尺寸为4μm×20μm波导探测器在-1 V的反向偏压下暗电流密度低至75 mA/cm~2,在1.55μm波长处的响应度为0.58 A/W,在-2 V的反向偏压下的3 dB带宽为5.5 GHz.     

美国罗切斯特大学演示新型nBn红外探测器

美国纽约罗切斯特大学的研究人员演示了一种新型nBn中波红外探测器。与PN光电二极管相比，其暗电流更小，而工作温度更高。顾名思义，这种器件在2个N型半导体层中间夹着一个阻挡层。阻挡层降低了暗电流，钝化或保护了器件的激活层。     

基于小分子半导体IEICO的高性能倍增型有机光电探测器

采用溶液法制备了结构为ITO/ZnO/P3HT∶IEICO/Al和ITO/PEDOT∶PSS/P3HT∶IEICO/Al的倍增型有机光电探测器,活性层中电子给体(P3HT)和电子受体(IEICO)的质量比为100∶1。以氧化锌(ZnO)为界面层的器件在正向与反向偏压下都能良好工作,而以PEDOT∶PSS为界面层的器件只能在反向偏压下工作。-15 V偏压下,与PEDOT∶PSS界面层器件相比, ZnO界面层器件的暗电流密度(2.2μA/cm~2)降低4倍以上,1.5 mW/cm~2光照下的光电流密度(3.7 mA/cm~2)提高3倍以上,外量子效率(External quantum efficiency,EQE)平均值(3262%)、响应度平均值(13.3 A/W)和探测灵敏度平均值(1.6×10~(13) Jones)分别提高4倍、4倍和11倍以上。这些结果表明,以ZnO为倍增型有机光电探测器的界面层,可以降低器件的暗电流密度并提高器件的EQEs,从而显著提高器件的光电性能。     

Relativistic R-matrix close-coupling calculations for photoionization of Ne-like Al IV

We present relativistic close-coupling photoionization calculations of Al IV using the Breit-Pauli R-matrix method to obtain photoionization cross-section of Al IV from the ground state and the lowest two J=0 (even) excited states. A multi-configuration eigenfunctions expansion of the core Al V is employed with spectroscopic configurations 2s²2p⁵, 2s2p⁶, 2s²2p⁴3s, 2s²2p⁴3p, 2s²2p⁴3d and 2s²2p⁴4s. We have included, for the first time, the lowest 68 level target states of Al V in the photoionization calculations of Al IV. Extensive configuration interaction wavefunctions are used to describe both the initial Al IV states and the final Al V states. Cross-sections are compared from three level calculations including only 2s² 2p^{5 2}P^o _3/2, _1/2 and 2s 2p^{6 2}S_1/2 levels of Al V. The present calculation using the lowest 68 target levels of Al V are presented for the first time and should provide reasonably complete database for practical application for photoionization cross-section for Al IV, where high-energy cross-sections along with near-threshold photoionization cross-section is required.     

Lifetime measurements of spherical and deformed states in 1f7/2 nuclei

Lifetimes have been determined using the Doppler Shift Attenuation Method in the N ≈ Z nuclei ⁴⁶V and ⁴⁸V, populated with the reaction ²⁸Si on ²⁴Mg at 115 MeV and ²⁴Mg on ²⁸Si at 100 MeV using Au and Pb backed targets. The coexistence of spherical and deformed states in the middle of the 1f_7/2 shell is discussed. The B(E2) and B(M1) reduced rates agree very well with large scale shell model predictions.     

Electron field emission properties of conducting polymer coated multi walled carbon nanotubes

The present work describes the field emission characteristics of conducting polymer coated multi walled carbon nanotubes (MWNTs) field emitters fabricated over flexible graphitized carbon cloth. Nanocomposites involving the combination of MWNTs and conducting polymers polyaniline (PANI) and polypyrrole (PPy) have been prepared by in-situ polymerization method and have been characterized using scanning electron microscopy and transmission electron microscopy. Using spin coating method, field emitters based on PANI/MWNTs and PPy/MWNTs over flexible graphitized carbon cloth have been prepared. The field emission characteristics have been studied using an indigenously fabricated set up in a vacuum chamber with a base pressure of 2 × 10⁻⁵ Pa and the results are discussed. Our results display that the field emission performance of the emitters depends strongly on the work function of the emitting material. Low turn on emission field of 2.12 V/μm at 10 μA/cm² and high emission current density of 1 mA/cm² at 3.04 V/μm have been observed for PANI/MWNTs field emitter.     

Quadratic electro-optic effect in the nonconjugated conductive polymer iodine-doped trans-polyisoprene, an organic nanometallic system

Thin films of 1,4-trans-polyisoprene have been prepared on various substrates from toluene solution and characterized using Fourier transform infrared (FTIR) spectroscopy, optical absorption spectroscopy and X-ray diffraction before and after doping with iodine. The optical absorption spectrum at low doping shows two peaks: one at 4.2 eV and the other at 3.2 eV. X-ray diffraction indicates an increase of (111) and (122) peak intensities upon doping. Quadratic electro-optic measurements have been made using field-induced birefringence. The Kerr coefficients as measured (3.5×10⁻¹⁰ m/V ² at 633 nm and 2.5×10⁻¹⁰ m/V ² at 1.55 μm) are exceptionally large, and they have been attributed to the subnanometer-size metallic domains formed upon doping and charge transfer.     

Multinuclear MRI of Solids: from Structure to Transport

Direct multinuclear imaging of rigid solids has been performed using the conventional two-pulse spin-echo pulse sequence and liquids magnetic resonance imaging (MRI) hardware. Two-dimensional ²⁷Al and ⁵¹V images of an Al₂O₃-V₂O₅-glass composite sample and ¹¹B, ²³Na, ²⁷Al and ²⁹Si images of glass have been detected, extending the range of nuclei and solid materials that can be studied by this approach. For a spinning cylinder packed with Al₂O₃ powder, quantitative velocity maps have been obtained by directly detecting the ²⁷Al nuclear magnetic resonance signal of the solid phase. The two velocity components in the imaging plane transverse to the rotation axis have been mapped using the three-pulse stimulated echo sequence. Some possibilities to improve sensitivity in the MRI experiments on rigid solids have been considered. In particular, inversion of the satellite transitions by a double frequency sweep adiabatic passage has led to a signal enhancement by a factor of two in ²⁷Al MRI of a glass sample despite a short repetition time (0.5 s) of the imaging pulse sequence. Authors' address: Igor V. Koptyug, International Tomography Center, Russian Academy of Sciences, 3A Institutskaya ulitsa, Novosibirsk 630090, Russian Federation     

Morphological effects on the field emission characteristics of zinc oxide nanotetrapods films

The direct growth of a tetrapod-like ZnO nanostructure has been accomplished by using a thermal oxidation method without any catalysts. Studies on the field emission properties of the ordered ZnO nanotetrapods films found that the shape of the ZnO nanotetrapods has considerable effect on their field emission properties, especially the turn-on field and the emission current density. Compared with the rod-like legs ZnO nanotetrapods, the nanotetrapods with acicular legs have a lower turn-on field of 2.7 V/μm at a current density of 10 μA/cm², a high field enhancement factor of 1830, and an available stability. More importantly, the emission current density reached 1 mA/cm² at a field of 4.8 V/μm without showing saturation. The results could be valuable for using the ZnO nanostructure as a cold-cathode field-emission material.      

New region of deformation in the neutron-rich 60 24Cr36 and 62 24Cr38

The neutron-rich nuclei ₂₃ ^60-63V have been produced at GANIL via interactions of a 61.8A·MeV ⁷⁶Ge beam with a ⁵⁸Ni target. Beta-decay to ₂₄ ^60-63Cr has been investigated using combined β- and γ-ray spectroscopy. Half-lives of the ^60-63V nuclei have been determined, and the existence of a beta-decay isomer in the ⁶⁰V nucleus is strongly supported. The observation of low-energy 2⁺ states in ⁶⁰Cr (646keV) and ⁶²Cr (446keV) suggests that these isotopes are strongly deformed with β₂ ∼ 0.3. This is confirmed by shell model calculations which show the dominant influence of the intruder g and d orbitals to obtain low 2⁺ energies in the neutron-rich Cr isotopes. Received: 13 June 2002 / Accepted: 27 August 2002 / Published online: 17 January 2003 RID="a" ID="a"e-mail: sorlin@ipno.in2p3.fr Communicated by D. Guerreau     

Synthesis and characterization of V3O7⋅H2O nanobelts

V ₃O₇?H₂O nanobelts were prepared by a hydrothermal method at 190 ^°C using V ₂O₅?nH₂O gel and H₂C₂O₄?2H₂O as starting agents. The nanobelts obtained have diameters ranging from 40 to 70 nm with lengths of up to several micrometers. Their morphology and structure have been characterized by XRD, SEM, TEM and IR spectroscopy. The effect of the annealing temperature on the morphology of the resulting product has been investigated. XRD and SEM showed that thermal annealing of the V ₃O₇?H₂O sample in air led to the collapse of the V ₃O₇?H₂O nanobelt structure and the convert into V ₂O₅ nanobelts. For the first time V ₂O₅ nanobelts with an ultrahigh aspect-ratio have been obtained in air. Furthermore, electrical conductivity and static magnetic susceptibility measurements have been carried out.     

Electrochemical properties of undoped CVD diamond films

The electrochemical properties of undoped diamond polycrystalline films grown on tungsten wire substrates using methanol as a precursor are described. The diamond film quality was changed by introducing sp²-bonded non-diamond carbon impurity through adjustment of the methanol-to-hydrogen (C/H) source gas ratio used for diamond growth.The electrodes were characterized by Raman spectroscopy, scanning electronic microscopy (SEM) and cyclic voltammetry (CV).Diamond coated tungsten wires were then used as a working electrode to ascertain their electrochemical behavior in electrolytic medium. Electrochemical windows of these films were found to be suitable in the potential range of [−2.5 V, +2.2 V] vs. Ag/AgCl in acid medium (0.1 M KCl).The electrochemical behavior was evaluated also using the Fe(CN)₆^3−/4−redox couple.The results demonstrate that the grain boundaries and sp²-hybridized carbon impurity can have a significant influence on electrochemical window of undoped diamond electrodes. It was observed that with increasing sp² carbon impurity concentration the electrochemical window decreases.     

氧化钒晶体的半导体至金属相变的理论研究

本文利用第一性原理方法研究了金红石相和单斜相VO₂晶体的电子结构和热力学性质.在计算中采用局域密度近似结合Hubbard U模型(LDA+U)描述电子的局域强关联效应,同时也利用微扰密度泛函方法计算了两种相结构的声子谱.计算结果表明V原子3d电子轨道中x²-y²轨道能级分裂决定了VO₂晶体在不同相结构下的金属和绝缘体特性.零温状态方程计算揭示了在68 GPa时可以发生从单斜结构 关键词： 2')" href="#">VO₂ 相变 第一性原理