ZnS作为空穴缓冲层的新型有机发光二极管

采用磁控溅射方法在ITO表面沉积了不同厚度的ZnS超薄膜作为有机发光二极管(OLEDs)的缓冲层,使典型结构(ITO/TPD/Alq3/Al)的OLEDs的发光性能得到改善。ZnS缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为5nm时,器件电流密度提高了近2倍,亮度提高了2倍;当ZnS缓冲层厚度为10nm时,器件发光的电流效率提高18%,器件的性能得到改善。宽禁带的ZnS缓冲层对空穴从阳极到有机功能层的注入有阻碍作用,促进器件载流子平衡,提高了器件发光效率,改善了器件性能。     

ITO表面研磨处理对有机电致发光器件性能的影响

用一种特制的纳米研磨粉磨擦方法处理ITO表面,用扫描探针显微镜研究了ITO表面形貌, 发现ITO表面尖峰明显减少, 表面粗糙度降低;研究了ITO处理与没做处理的双层结构有机电致发光器件,发现ITO处理的器件在亮度和效率方面都有明显提高。分析了器件性能提高的原因,认为是由于ITO处理的器件提高了注入载流子并且降低了界面势垒。     

空穴注入层对蓝色有机电致发光器件性能的影响

以DPVBi为发光层,NPB为空穴传输层,在阳极ITO和NPB之间分别插入不同的空穴注入层CuPc和PEDOT:PSS,制备了两种结构的蓝色有机电致发光器件(OLEDs):ITO/CuPc/NPB/DPVBi/BCP/Alq3/Al和ITO/PEDOT:PSS/NPB/DPVBi/BCP/Alq3/Al,研究了不同空穴注入材料对蓝色OLEDs发光性能的影响,并与没有空穴注入层的器件进行了比较.其中CuPc分别采用旋涂和真空蒸镀两种丁艺,比较了不同成膜工艺对器件发光特性的影响.结果表明:加入空穴注入层的器件比没有空穴注入层器件性能要好,其中插入水溶性CuPc的器件,其发光亮度和效率虽然比蒸镀CuPc器件要低,但比插入PEDOT:PSS 器件发光性能要好.又由于水溶性CuPc采用旋涂工艺成膜,与传统CuPc相比,制备工艺简单,所以为一种不错的空穴注入材料.     

ITO再生处理对有机电致发光器件特性的影响

分别采用Na OH和HCl溶液对废旧氧化铟锡(ITO)基板进行再生处理,用原子力显微镜(AFM)观测了处理后的ITO表面形貌,并基于再生处理过的ITO制备了有机电致发光器件(OLED),系统研究了器件的性能。结果表明,上述方法可以有效去除废旧ITO残留的铝电极并改变其表面的化学结构,提高了器件的特性,尤其以Na OH单次处理最为有效。以此制备的OLED器件电流效率达到12.08 cd/A,较之未回收利用的新ITO所制备的器件提高了14.7%;外量子效率达到5.23%,提高了11.7%。另外,经不同方法处理后,器件中生色团与生色团之间、生色团与助色团之间的空间位阻增大,器件发光光谱肩峰效应增强。     

具有Au/MoO_3空穴注入层的有机发光二极管

研究了单层MoO3(5nm)和复合Au(4nm)/MoO3(5nm)HILs对OLEDs器件性能的影响,器件结构为ITO/HIL/NPB(40nm)/Alq3(60nm)/LiF(1nm)/Al(100nm)。与单层MoO3HIL的器件相比,具有复合Au/MoO3HIL的器件具有较大的电流和亮度。这是由于Au的功函数介于ITO和MoO3之间,导致Au的引入提高了空穴的注入效率。     

有机电致发光器件及显示驱动研究进展

经过30多年的发展，得益于对高效有机半导体材料、新型器件结构、器件工作机理的深入理解以及产业界坚持不懈的工程探索，有机发光二极管（Organic light-emitting diodes,OLEDs）的综合性能取得了突破性进展，并成功实现了商业化应用，OLEDs新型显示已成为新一代信息技术的先导性支柱产业。本文将从OLEDs器件角度阐述有机电致发光器件以及显示驱动的研究进展，首先结合光电器件性能提升介绍OLED的基本器件结构演变过程，随后系统性重点阐述现阶段产业上广泛使用以及极具应用前景的器件结构，包括p-i-n OLEDs器件结构、叠层器件结构、非掺杂器件结构，最后简述OLEDs显示驱动技术，以期为相关科研工作者提供一些有益的参考。     

典型有机发光二极管中载流子传输和复合模型

提高载流子复合效率是改善有机发光二极管(OLEDs)发光效率的重要方法。采用真空热蒸发成膜法制作了典型双层结构的OLEDs(ITO/TPD/Alq₃/Al)。二极管的性能测试结果表明器件的电流-电压关系与Fow ler-Nordheim场发射载流子注入理论符合得较好。以Fow ler-Nordheim场发射载流子的隧穿注入理论为基础,对OLEDs的电流进行理论分析和数学推导,建立典型双层结构有机发光二极管中载流子传输、复合的理论模型。以此模型为依据,对载流子注入复合进行理论分析,探究载流子注入复合的效率的表达式。在外加电压和器件材料一定下,得出了载流子复合效率与阳极区一侧积累的空穴面密度和阴极区一侧积累的电子面密度的关系表达式。     

有机薄膜电致发光器件工艺检测的一种简便方法——覆膜加热观测法

提出了一种简便易行、并与有机薄膜电致发光器件制备工艺完全兼容的工艺检测方法－－覆膜加热观测法。这种方法是在器件的制备工艺过程中,同时在铟锡氧化物（ITO）电极的各层有机薄膜上覆盖一层不透气的薄膜（如金属Al膜等）,接着进行快速加热,最后对器件表面进行形貌观测。采用这种方法,观察了器件表面气泡的形成过程,观察了加热温度、ITO表面处理以及有机物纯度对敢泡形成的影响。实验表明,覆膜加热观测法能有效地对工艺进行对比检测,从而达到改进工艺、提高器件质量的目的。     

有机异质结连接层C60/CuPc电荷产生能力研究

有机异质结连接层因其具有良好的透光性能、制备工艺和有机电致发光器件(Organic light-emitting diodes,OLEDs)完全兼容的优点,被广泛应用于叠层OLEDs中。在叠层OLEDs中,连接层可产生电荷,其工作性能是影响叠层OLEDs性能的关键因素之一。为了获得最佳性能的有机异质结连接层,本文制备了结构为glass/ITO/tris(8-hydroxyquinoline) aluminum(Alq_3)(60 nm)/C_(60)(x nm)/CuPc(y nm)/N,N′-bis(naphthalen-1-yl)-N,N′-bis (phenyl)-be-nzidine(NPB)(40 nm)/Al (100 nm)的有机器件,直接获得了有机异质结连接层C_(60)/CuPc产生的器件电流。通过结构优化发现,结构为C_(60)(30 nm)/CuPc(10 nm)的连接层具有最强的电荷产生能力,并对最优结构连接层形成的物理机制作了合理的解释.本文获得的结果可为理解有机异质结连接层工作机理以及制备高性能叠层OLEDs提供理论基础。     

采用复合空穴注入层提高有机电致发光器件的性能

制备了以Ag/SAM/m-MTDATA为复合空穴注入层的NPB/Alq₃双层异质结发光器件,研究了器件的性能并与传统的器件进行了对比。考察了银膜厚度的变化对器件性能的影响。研究了光谱窄化以及微腔效应对器件的影响。研究结果表明:在ITO表面制备4-FTP自组装单分子膜修饰的5 nm厚的金属银膜,可以在保持阳极透明性的基础上,增强空穴的注入,改善界面的形貌,进而提高器件性能。制备的ITO/Ag/SAM/m-MTDATA/NPB/Alq₃/LiF/Al器件的启亮电压为4 V,最 大电流效率为6.9 cd/A, 最大亮度为34 680 cd/m²(12 V);优于以ITO为阳极的对比器件(25 300 cd/m² @12 V)。     

ITO阳极电阻对有机电致发光器件性能的影响

以不同方块电阻的ITO作为阳极,利用真空热蒸发的方法制备了双层结构有机电致发光器件ITO/TPD/Alq3/LiF/Al,定量研究了ITO阳极电阻对器件光电性能的影响。实验结果表明,具有较大阳极电阻的器件在一定的驱动电压下表现出较低的电流密度和亮度,我们认为主要原因是阳极电阻的分压导致用于载流子注入的有效驱动电压减少。扣除阳极电阻以后,我们发现用于载流子注入的有效驱动电压并不受阳极电阻的影响。另外,我们没有观察到阳极电阻对器件发光效率的明显影响。     

Progress in Modification of Indium-Tin Oxide/Organic Interfaces for Organic Light-Emitting Diodes

The oxide/organic interfaces play crucial roles in the hole injection from the anode electrodes to the emitting organics in organic light-emitting diodes (OLEDs), and hence have strong impacts on the efficiencies and other properties of the devices. Indium-tin oxide (ITO) is currently the most popular anode material used in OLEDs due to several merits, such as good etch ability, good adherence, high transparency, low resistivity, and high work function. Interfacial engineering between the ITO electrode and the overlying organic layers is an important process to obtain the high performance of the diode devices. In this article, recent progress in modification of the ITO/organic interfaces is reviewed, as these interfaces are important to the development of the technologies aiming at improving the electroluminescence, and efficiencies as well as reducing the operation voltages of OLEDs. ITO/Organic interfacial properties can be controlled or modified by simply changing the surface properties of ITO using chemical or physical treatments, and by adding a buffer layer (e.g., metal, oxide, or organic thin films) between the ITO and hole transport or emitting organic layers. The literature data showed that the electroluminescence, efficiencies, and lifetimes of the OLEDs could be greatly increased and the operation voltage considerably decreased when the ITO/organic interfaces have been properly improved.     

n-type ZnS used as electron transport material in organic light-emitting diodes

This paper reports on the n-type ZnS used as electron transport layer for the organic light-emitting diodes (OLEDs). The naphthyl-substituted benzidine derivative (NPB) and tris (8-hydroxyquinoline) aluminium (AlqOLEDs n型ZnS 电子运输层 亮度 效率 功能发光二极管OLEDs, n-type ZnS, electron transport layer, luminance, efficiencyProject supported by the National Natural Science Foundation of China (Grant No 60476005), the Scientific Research Foundation for Returned Overseas Chinese Scholars, the State Education Ministry, the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No 2003CB314707), and the Key Project of National Natural Science Foundation of China (Grant No 50532090).2005-11-211/9/2006 12:00:00 AMThis paper reports on the n-type ZnS used as electron transport layer for the organic light-emitting diodes （OLEDs）. The naphthyl-substituted benzidine derivative （NPB） and tris （8-hydroxyquinoline） aluminium （Alq3） are used as the hole transport layer and the emitting layer respectively. The insertion of the n-type ZnS layer enhances the electron injection in the OLEDs. The study was carried out on OLEDs of structures： indium-tin-oxide （ITO）/NPB/Alq3/ZnS/LiF/AL, ITO/NPB/Alq3/LiF/AL and ITO/NPB/Alq3/AL. The luminance and efficiency of the device containing this electron transport layer are increased significantly over those obtained from conventional devices due to better carrier balance.     

水溶性CuPc旋涂转速及退火方式对蓝色有机电致发光器件性能的影响

本文以Be(PP)₂为发光层、水溶性酞菁铜(WS-CuPc)为空穴注入层、NPB为空穴传输层,制备了结构为ITO/WS-CuPc/NPB/Be(PP)₂/LiF/Al的蓝色有机发光二极管(OLEDs).研究了WS-CuPc不同旋涂转速对器件性能的影响.并在WS-CuPc最佳旋涂转速的基础上,进一步研究了WS-CuPc薄膜不同退火方式对器件性能的影响.实验中,对WS-CuPc层采用了一种新的退火方式,即对ITO玻璃衬底先加热后旋涂WS-CuPc层,并与传统退火方式 关键词： 水溶性CuPc 蓝色有机电致发光 旋涂转速 退火方式     

IPTO薄膜制备及其在有机光电器件中的应用

新型IPTO(Pr Ti O3掺杂In2O3)薄膜的可见光透过率及导电性可与商业化的ITO薄膜媲美。采用双源电子束设备制备了一种新型的IPTO透明导电薄膜,通过开尔文探针法测试,其功函数为5.14 e V。为验证新型IPTO透明导电阳极对有机电致发光器件性能的影响,将IPTO替代商业化ITO作为阳极制备了有机电致发光器件。基于IPTO阳极的器件的亮度最大值为85 140 cd/m2,外量子效率最大值为3.16%,分别为以ITO为阳极的器件的3倍及1.13倍。这种性能的改善是由于IPTO具有较小的表面粗糙度及较高的功函数,可以降低阳极的注入势垒,有利于电荷向有机层注入,改善了器件内的空穴及电子的注入平衡。     

基于迭层结构的高效红色有机电致发光器件

为了提高红色有机电致发光器件的亮度和效率,引入Alq3:Mg/WO3作连接层制备了红色迭层有机电致发光器件.通过调节WO3的厚度得到了最佳器件,其效率和亮度达到了普通器件的三倍和四倍.利用铕配合物[Eu(DBM)3bath]和小分子染料器件(DCJTI)单元进行组合制备迭层器件,结构为ITO/TPD/DCJTI:CBP/BCP/Alq3/Alq3:Mg/WO3/TPD/Eu(DBM)3bath:TPD/Eu(DBM)3bath/LiF/A1,器件的最大亮度达8609 cd/m'2,最大效率达10.2 cd/A.     

Diffusion study of multi-organic layers in OLEDs by ToF-SIMS

A model organic light-emitting diodes (OLEDs) with structure of tris(8-hydroxyquinoline) aluminum (Alq₃)/N,N′-diphenyl-N,N′-bis[1-naphthy-(1,1′-diphenyl)]-4,4′-diamine (NPB)/indium tin oxide (ITO)-coated glass was fabricated for diffusion study by ToF-SIMS. The results demonstrate that ToF-SIMS is capable of delineating the structure of multi-organic layers in OLEDs and providing specific molecular information to aid deciphering the diffusion phenomena. Upon heat treatment, the solidity or hardness of the device was reduced. Complicated chemical reaction might occur at the NPB/ITO interface and results in the formation of a buffer layer, which terminates the upper diffusion of ions from underlying ITO.     

Effects of substrate treatment on the electroluminescence performance of flexible OLEDs

Electroluminescence (EL) performance of flexible organic light-emitting device (FOLED) has been found to be highly dependent upon the morphology of the surface of the indium thin oxide (ITO)/plastic substrate as well as the patterning and processing conditions of the substrate. We will present evidence showing that luminance efficiency of FOLED can be greatly improved by pretreatment. Surface analysis of the ITO/PET by means of atomic force microscope (AFM) and optical microscope will be compared with that of the ITO/glass and the influence of flexible OLEDs substrate treatment by various methods on EL performance will also be discussed.