The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a clean Si(100)2 × 1 surface at 300 and 550 K. Accurate measurement reeveal well resolved fine structure at Auger SiL_2.3VV transitions at 62 and 83 eV. These peaks can be attributed to SiO and SiN bonds. Furthermore, it is argued that the broadening in the SiLi_2.3VV Auger transition at 83 eV at 300 K may be composed of two nearby peaks, which could be attributed to two different kinds of chemical bonding, SiN and SiO. The absence of a peak at 69 eV at room temperature strongly suggests the NO adsorption on a Si(100)2 × 1 surface to be molecular. Dissociation of NO on the Si(100)2 × 1 surface is observed at 550 K.     

Morphology and thermal stability of AlF3 thin films grown on Cu(100)

The growth of ultrathin epitaxial layers of aluminum fluoride on Cu(100) has been studied by a combination of surface science techniques. Deposition at room temperature results in step decoration followed by the formation of dendritic two-dimensional islands that coalesce to form porous films. Ultrathin layers (up to 2 monolayers in thickness) are morphologically unstable upon annealing; de-wetting takes place around 430 K with the formation of three-dimensional islands and leaving a large fraction of the Cu surface uncovered. Films several nanometers thick, on the contrary, are stable up to ca. 730 K where desorption in molecular form sets on. The effect of electron irradiation on the AlF₃ has also been characterized by different spectroscopic techniques; we find that even small quantities of stray electrons from rear electron beam heating can provoke significant decomposition of the aluminum fluoride, resulting in the release of molecular fluorine and the formation of deposits of metallic aluminum. These features make AlF₃ an interesting material for spintronic applications.     

Study of the features of BaF<Subscript>2</Subscript> heteroepitaxy on CaF<Subscript>2</Subscript>/Si(100) layers obtained in the high-temperature growth mode

The surface morphology of BaF₂ epitaxial films grown by MBE (molecular beam epitaxy) in various modes on the surface of CaF₂/Si(100) is investigated by AFM. The CaF₂ layers on Si(100) are obtained in the high-temperature growth mode (Т _S = 750°C). It is shown that the epitaxy of BaF2 at a temperature of 600°C at the initial stage of growth leads to the formation of defects such as perforations in the epitaxial film, while epitaxy at a temperature of 750°C provides a defect-free film with a surface morphology suitable for the subsequent growth of semiconductors of IV–VI type and solid solutions based on them.     

Effect of an electron beam on CaF<Subscript>2</Subscript> and BaF<Subscript>2</Subscript> epitaxial layers on Si

Atomically smooth CaF₂ and BaF₂ layers have been sequentially grown on Si(111) substrates by molecular beam epitaxy. Pore macrodefects have been revealed at the points of the action of an electron beam from a diffractometer when analyzing the crystal structure of the surface during the growth with the subsequent observation using atomic force microscopy. The formation of these macrodefects is associated with the decomposition of fluorides by high-energy electrons, which is accompanied by the desorption of fluorine and the drift current of positive ions from the electron charge drains.     

In-situ study on thermal decomposition of 1,3-disilabutane to silicon carbide on Si(1 0 0) surface

The intermediates of thermal decomposition of 1,3-disilabutane (SiH₃CH₂SiH₂CH₃, DSB) to form SiC on Si(1 0 0) surface were in situ investigated by reactive ion scattering (RIS), temperature programmed reactive ion scattering (TPRIS), temperature programmed desorption (TPD), and auger electron spectroscopy (AES). DSB as a single molecular precursor was exposed on Si(1 0 0) surface at a low temperature less than 100 K, and then the substrate was heated up to 1000 K. RIS, TPD, and AES investigations showed that DSB adsorbed molecularly and decomposed to SiC via some intermediates on Si(1 0 0) surface as substrate temperature increasing. Between 117 and 150 K molecularly adsorbed DSB desorbed partially and decomposed to CH₄Si₂, which is the first observation on Si(1 0 0) surface, and further decomposed to CH₄Si between 150 and 900 K. CH₄Si lost hydrogen and formed SiC over 900 K.     

Mechanisms for oxygen adsorption on the Si(110) surface studied by Auger electron spectroscopy

Oxygen adsorption on the Si(110) surface has been studied by Auger electron spectroscopy. For a clean annealed surface chemisorption occurs, with an initial sticking probability of ～6 × 10^?3. In this case the oxygen o_kll signal saturates and no formation of SiO₂ can be detected from an analysis of the Si L_2,3VV lineshape. With electron impact on the surface during oxygen exposure much larger quantities are adsorbed with the formation of an SiO₂ surface layer. This increased reactivity towards oxygen is due to either a direct effect of the electron beam or to a combined action of the beam with residual CO during oxygen inlet, which creates reactive carbon centers on the surface. Thus in the presence of an electron beam on the surface separate exosures to CO showed adsorption of C and O. For this surface subsequent exposure in the absence of the electron beam resulted in additional oxygen adsorption and formation of SiO₂. No adsorption of CO could be detected without electron impact. The changes in surface chemistry with adsorption are detectable from the Si L_2,3VV Auger spectrum. Assignments can be made of two main features in the spectra, relating to surface and bulk contributions to the density of states in the valence band.     

Spectroscopic characterization of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films by XPS and XAS

Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for β-FeSi₂ single crystals and homoepitaxial β-FeSi₂ films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial β-FeSi₂ films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous β-FeSi₂ films can be grown on the β-FeSi₂ single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states of β-FeSi₂ single crystals and homoepitaxial β-FeSi₂ films, which is important to reveal optimized growth conditions of homoepitaxial films.     

Fabrication and analysis of buried iron silicide microstructures using a focused low energy electron beam

We fabricated iron and iron silicide microstructures on an Si(1 0 0) clean surface via electron beam induced process of Fe(CO)₅ multilayer and subsequent annealing. The fabricated microstructures were in situ analyzed by Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). We successfully analyzed the coverage and chemical states of the artificial deposited iron structure area-selectively by AES. The artificial iron structure was fabricated after heating to above 350 K to desorb residual Fe(CO)₅ species. The artificial structure was observed even after 1190 K annealing by SEM, but AES measurements showed it to be covered by Si atoms. We concluded that the buried iron silicide microstructure was formed by the present process.     

The reassessment of the structural transition regions along the liquidus of Fe–Si alloys and a possible liquid–liquid structural transition in FeSi2 alloy

We reassessed the structural transition regions along the liquidus of Fe–Si alloys by using ab initio molecular dynamics simulation. Except for 50 at.% Si, structural transition compositions are found at both 30 at.% Si and 67 at.% Si (FeSi₂) which are eutectic alloys. We demonstrated that the liquid structure in the sub-region of 0～30 at.% Si is close-packed, and in the sub-region of 67～100 at.% Si liquid alloys have very open structure. From 30 at.% Si to 67 at.% Si, the close-packed structure gradually change into open one. These structure transition sub-regions are also supported by the formation enthalpy of liquid alloys. Furthermore, the predicted enthalpy change between 1585 K and 1873 K is so large that there is probably liquid–liquid transition with temperature at FeSi₂ alloy which is an important thermoelectric material. Discussions have been made on the materials phenomenon of several Fe–Si alloys based on the structural information.     

Selenium adsorption on Cs-covered Si(100) 2×1 surfaces

This report involves the study of Se adsorption on caesiated Si(100) 2×1 surfaces in ultra high vacuum (UHV) using low energy electron diffraction, Auger electron spectroscopy, thermal desorption spectroscopy and work function measurements. Selenium atoms on Cs/Si(100) 2×1 surface adsorb initially on uncaesiated portions of Si and subsequently on the Cs overlayer. The presence of Se increases the binding energy of Cs on Si(100). For Cs and Se coverages above 0.5 ml CsSe and Cs_xSe_ySi_z, compound formation was observed. The coadsorption of Se and Cs induces a high degree of surface disorder, while desorption most probably causes surface etching. The presence of Cs on Si(100) 2×1 surfaces prevents the diffusion of Se into the Si substrate and greatly suppresses the formation of SiSe₂ and SiSe₃, detected when Se is adsorbed on clean Si(100) 2×1 surfaces.     

PED沉积La-Sr-Cu-O薄膜表面的有序纳米结构

采用脉冲电子束沉积(PED)技术在Si(100)衬底上生长La_Sr_Cu_O薄膜，在750℃生长温度下获得具有有序纳米结构的表面形貌.采用聚集离子束(FIB)技术对获得的纳米结构进行表征，结果表明，这种有序的纳米结构是由于Si衬底和La_Sr_Cu_O薄膜之间的热膨胀系数和晶格的 失配引起的纳米裂纹.在这些纳米裂纹处，La_Sr_Cu_O成核生长获得独立的纳米线.通过控制 这种有序的纳米结构的生长，这种有序的纳米结构可以用来构造弱连接形成的器件. 关键词： 脉冲电子束沉积 La_Sr_Cu_O薄膜 纳米结构     

Effect of high-energy electron beam irradiation on the surface morphology of CaF2/Si(100) heterostructures

The effect of high-energy electron beam irradiation on the surface morphology of CaF₂ films in the course of molecular-beam epitaxy on Si(100) substrates is studied by atomic-force microscopy. It is shown that not only do morphological defects significantly change their shape in the electron beam spot, but also their average height more than doubles.     

Nitric oxide adsorption on the Si(100)(2×1) surface — a vibrational study

High-resolution vibrational electron energy loss spectroscopy has been used to study the adsorbed state of NO on the Si(100)(2×1) surface. At 300 K, NO is adsorbed dissociatively on the Si(100) surface in the disordered structure, and the Si₃N and SiOSi species are formed. By heating at 1200–1300 K, the O adatoms are removed from the surface and the silicon nitride is formed; the (2×1) structure is recovered, which is interpreted to indicate that the nitride is formed mainly in the subsurface region.     

Formation of strontium template on Si(1 0 0) by atomic layer deposition

The formation of ordered Sr overlayers on Si(1 0 0) by Atomic Layer Deposition (ALD) from bis(triisopropylcyclopentadienyl) Strontium (Sr(C₅ⁱPr₃H₂)₂) and H₂O has been investigated. SrO overlayers were deposited on a 1-2 nm SiO₂/Si(1 0 0) substrate, followed by a deoxidation process to remove the SiO₂ layer at high temperatures. Auger electron spectroscopy, Rutherford backscattering spectrometry, spectroscopic ellipsometry, and low-energy electron diffraction were used to investigate the progress of both ALD and deoxidation processes. Results show that an ordered Sr/Si(1 0 0) surface with 2 × 1 pattern can be obtained after depositing several monolayers of SrO on Si using ALD followed by an anneal at 800-850 °C. The (2 × 1) ordered Sr/Si(1 0 0) surface is known to be an excellent template for the epitaxial growth of SrTiO₃ (STO) oxide. The present results demonstrate that ALD is a potential alternative to molecular beam epitaxy methods for the fabrication of epitaxial oxides on semiconductor substrates.     

Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O2 on Si: I. Adsorption studies

The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O₂ on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O₂ on Si (111) surface is estimated to be S0 = 0.21.     

Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si（100） substrates

Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100) substrate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100) substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a χmin value of 6.7% measured by channeling and random Rutherford backscattering spectrometry (RBS), and a surface root-mean-square (RMS) roughness of 1.568 nm obtained by atomic force microscopy (AFM). In the case of the Si(100) substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150°C-300°C, with the degree of strain relaxation being more than 96%. The X-ray diffraction (XRD) and AFM measurements demonstrate that the alloys each have a good crystalline quality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface, which are parallel to the interface plane and should not degrade electrical properties and device performance.     

Mechanism and speed of initial step of oxygen chemisorption-O2 on W

A direct first step in the mechanism for the initial oxidation of a polycrystalline tungsten surface, the catalyzed dissociation of O₂ on it, or the formation of WO _X by O₂ at intermediate temperatures is shown to occur in ∼10⁻¹³ s. Molecular beam experiments demonstrated that the reactivity was greater than 90%, the unreacted O₂ was substantially unaccommodated in translational energy to the surface temperature, and the reaction probability was nearly independent of surface temperature from 2800 to 415 K although there was a small increase at 415 K. The general conditions when no molecular surface precursor state contributes to the surface reactivity are discussed.     

Growth and characterization of delta type Si---SiOx-heterostructures

We present a procedure whereby 2–3nm thick layers of SiO_x are incorporated in (100) Si during molecular beam epitaxial growth. Analysis by Auger electron spectroscopy and transmission electron microscopy shows, that the delta function SiO_x layers with a width of only a few lattice planes are embedded in a monocrystalline Si matrix. Capacitance — voltage measurements and resonant tunneling spectroscopy give evidence that the layers act as sharp potential barriers.     

Low temperature ion beam mixing of Co/Si systems

Co/Si systems were ion beam mixed at 77 K using a 100 keV Ar beam. The formation of different phases as a function of irradiation dose has been studied, using Mössbauer spectroscopy (MS) and Rutherford backscattering spectroscopy (RBS). It was found that Co₂Si, CoSi and CoSi₂ are formed subsequently in parallel layers. After high dose irradiation, a phase with stoichiometry Co∶Si equal to 1∶3 was observed, suggesting CoSi₃ has been formed. However, MS gave clear evidence that this phase consists of precipitates of CoSi₂ and Si. Finally, we found that the amount of mixing scales linearly with the square root of the fluence, with a mixing rate of 1.0×10⁴Å⁴.     

On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

Highly perfect epitaxial heterostructure CoSi₂ films have been grown on the surface of Si (111) and Si (100) single crystals by the method of molecular-beam epitaxy. The optimal regimes of the film growth with different thicknesses have been determined. It has been shown that short-term annealing of epitaxial films at T = 900–950 K leads to the formation of new CoSi₂/Si(111)-2 × 2 and CoSi₂/Si(100)−2 × 4 superstructures.