Ultraviolet laser-induced voltages in LaSrAlO4 single crystal

Laser-induced ultrafast photovoltaic effect is observed in LaSrAlO4 single crystal at ambient temperature without any applied bias. An open-circuit photovoltage is obtained when the wafer is irradiated by a 248-nm-KrF laser pulse of 20 ns duration. The response time and full width at half maximum of the photovoltage pulse are 6 ns and 19 ns, respectively, indicating that LaSrAlO4 single crystal has potential application in ultraviolet detector.     

Laser induced photovoltages in B-riched MgB2 thin films

Ultrafast photoelectric effects have been observed in MgB₂ thin films fabricated by chemical vapor deposition on MgO (1 1 1) substrates. The rise time and full width at half-maximum of the photoresponse pulse signals were about 2.4 and 4 ns under the irradiation of a 248 nm laser pulse of 20 ns in duration through the MgO substrate at ambient temperature without any bias. Furthermore, the signal polarity is directly bound up with the laser illumination positions, while no photovoltage was observed when the MgO (1 1 1) single crystal was irradiated. The inner origin mechanism of the present positions-dependent photovoltaic response was discussed.     

Ultraviolet Photoelectric Effect in ZrO2 Single Crystals

Nanosecond photoelectric effect is observed in a ZrO2 single crystal at ambient temperature for the first time. The rise time is 20ns and the full width at half maximum is about 30ns for the photovoltaic pulse when the wafer surface of the ZrO2 single crystal is irradiated by 248 nm KrF laser pulses. The experimental results show that ZrO2 single crystals may be a potential candidate in UV photodetectors.     

Nanosecond photoelectric effects in all-oxide p-n junction of La<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>MnO<Subscript>3</Subscript>/SrNb<Subscript>0.01</Subscript>Ti<Subscript>0.99</Subscript>O<Subscript>3</Subscript>

Nanosecond (ns) photoelectric effects have been observed in all-oxide p-n junctions of La_0.9Sr_0.1MnO₃/SrNb_0.01Ti_0.99O₃ for the first time. The rise time was about 23 ns and the full width at half maximum was about 125 ns for the open-circuit photovoltaic pulse when the La_0.9Sr_0.1MnO₃ thin film in the p-n junction was irradiated by a laser of ≈20 ns pulse duration and 308 nm wavelength. The photovoltaic sensitivity was 80 mV/MJ for a 308 nm laser pulse.     

Nanosecond photoelectric effects in all-oxide p-n junction of La_(0.9)Sr_(0.1)MnO_3/SrNb_(0.01)Ti_(0.99)O_3

Since the discoveries of high Tc superconductors and colossal magnetoresistance, enormous efforts have been devoted to investigating the perovskite oxide materials. The fabrication of artificial crystalline materials through layer-by-layer epitaxial growth with full control over the composition and structure at the atomic level has become one of the most exciting areas of research in condensed matter physics and materials science. In related research, much attention has been paid to the new de…     

Study of near-infrared nonvolatile two-center holographic recording in LiNbO3:Fe:Rh crystal

The near-infrared nonvolatile holographic recording has been realized in a doubly doped LiNbO₃:Fe:Rh crystal by the traditional two-center holographic recording scheme, for the first time. The recording performance of this crystal has been investigated by recording with 633 nm red light, 752 nm red light and 799 nm near-infrared light and sensitizing with 405 nm purple light. The experimental results show that, co-doped with Fe and Rh, the near-infrared absorption and the photovoltaic coefficient of shallow trap Fe are enhanced in this LiNbO₃:Fe:Rh crystal, compared with other doubly doped LiNbO₃ crystals such as LiNbO₃:Fe:Mn. It is also found that the sensitizing light intensity affects the near-infrared recording sensitivity in a different way than two-center holographic recording with shorter wavelength, and the origin of experimental results is analyzed.     

Ultraviolet photovoltaic characteristic of MgB2 thin film

Fast photoelectric effects have been observed in MgB₂ thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was \sim185\,ns for the photovoltaic pulse when the film was irradiated by a 308\,nm laser pulse of 25\,ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB₂ film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.     

飞秒激光烧蚀LiNbO3晶体的形貌特征与机理研究

采用了不同能量的单脉冲和多脉冲飞秒激光对LiNbO₃晶体进行烧蚀，并刻蚀了表面衍射型光栅.通过扫描电镜和原子力显微镜观察了烧蚀点的形貌特征，首次发现利用单束飞秒激光脉冲对LiNbO₃晶体烧蚀，可以得到超衍射极限的烧蚀点，当聚焦光斑直径约为2μm、能量为170nJ的单脉冲飞秒激光作用时，烧蚀点的直径约为400nm，100nJ，17个脉冲作用时烧蚀点的直径约为800nm.同时可以观察到在能量较低的多脉冲飞秒激光作用下， LiNbO₃晶体呈现出大约200nm周期性分布的波纹状结构.实验结果表明，选择合适参数的飞秒激光脉冲可以对LiNbO₃晶体进行超衍射极限加工，这对于利用飞秒激光制作LiNbO₃基质的微纳光电子器件有十分重要的意义.     

Control of sensitivity to hologram storage in LiNbO3 using an accessory photovoltaic crystal

Enhancement of sensitivity to hologram storage in a LiNbO₃ crystal is reported by using an accessory photovoltaic LiNbO₃ crystal, highly iron doped and reduced. With an illumination of 600 mW/cm² at λ=0.48 μm of the photovoltaic crystal the photogenerated electric field is about 10 kV/cm. This field is applied to a storage crystal having a higher resistivity and improves substantially the photorefractive sensitivity and saturation of the diffraction efficiency.     

Improvement of photorefractive properties in Hf:Fe:LiNbO3 crystals with various [Li]/[Nb] ratios

Photorefractive properties of Hf:Fe:LiNbO3 crystals with various [Li]/[Nb] ratios have been investigated at 488 nm wavelength based on the two-wave coupling experiment. High diffraction efficiency and large recording sensitivity are observed and explained. The decrease in Li vacancies is suggested to be the main contributor to the increase in the photoconductivity and subsequently to the induction of the improvement of recording sensitivity. The saturation diffraction efficiency is measured up to 80.2%, and simultaneously the recording sensitivity of 0.91 cm/J is achieved to in the Hf:Fe:LiNbO3 crystal grown from the melt with the [Li]/[Nb] ratio of 1.20, which is significantly enhanced as compared with those of the Hf:Fe:LiNbO3 crystal with the [Li]/[Nb] ratio of 0.94 in melt under the same experimental conditions. Experimental results definitely show that increasing the [Li]/[Nb] ratio in crystal is an effective method for Hf:Fe:LiNbO3 crystal to improve its photorefractive properties.     

Effect of [Li]/[Nb] ratios on the photorefraction and scattering properties in In: Fe: Cu: LiNbO3 crystals at 488 nm wavelength

The high sensitivity, fast response and the high quality reconstructions are observed in various [Li]/[Nb] ratios In:Fe:Cu:LiNbO₃ crystals at 488 nm wavelength based on the two-beam coupling experiment. The strong blue photorefraction is contributed by the two-center effect and the remarkable characteristic of being in phase between the two gratings recorded in shallow and deep trap centers. The blue photorefraction is enhanced significantly with the increasing of [Li]/[Nb] ratios under the same experimental conditions. The sensitivity S" is reduced to 0.46 J/cm, simultaneously the response time is as fast as 4.4 s and the erase phenomenon is not obvious in In:Fe:Cu:LiNbO₃ crystals which [Li]/[Nb] ratio is 0.986 in crystal. Increasing [Li]/[Nb] ratios improve the damage-resistant ability of the crystals, but lead to a more serious beam fanning. Experimental results definitely show that the near-stoichiometric In: Fe: Cu: LiNbO₃ crystal becomes a promising candidate for blue photorefractive holographic recording.     

Laser-induced thermoelectric voltage in normal state MgB2 thin films

Laser-induced voltage has been observed in c-axis oriented MgB₂ thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB₂.     

Broadband and rapid tuning of an all-solid-state single-frequency Nd:YVO4 laser

A diode-pumped tunable single-frequency Nd:YVO₄ laser has been built. The laser incorporates a LiNbO₃ etalon (LE) as a coarse tuning element and a LiNbO₃ crystal (LC) as a fine tuning element to obtain broadband, rapid tuning. More than 480 mW of output power has been obtained from the tunable laser with frequency tuning range of 17.2 GHz and the tuning response time of 10 ns. PACS 42.55.Xi; 42.60.Da; 42.60.Fc; 42.60.Pk     

Extra-cavity optical parametrical oscillator based on multiple channels periodical poling lithium niobate PPLN

A widely continuous tunable eye-safe laser based on periodical poling lithium niobate (PPLN) crystal, driven by a diode-end-pimped acoustic-optical (AO) Q-switcher Nd:YVO₄ laser was demonstrated. Under the pumped power of 7.74 W at 808 nm and the frequency repetition rate of 45 kHz, the maximum output power of 0.58 W at 1534 nm with the minimum pulse duration of 7.53 ns was obtained. The corresponding peak power and single pulse energy were calculated to be up to 1.71 kW and 12.9 μJ, respectively. By changing 20 different channels with poling period between 27.8 to 31.6 μm, we measured widely continuously tunable wavelength coverage from 1390 to 1605 nm.     

Preparation and holographic storage properties of tri-doped Mg:Mn:Fe:LiNbO3 crystals

Doping MgO, MnO and Fe₂O₃ in LiNbO₃ crystals, tri-doped Mg:Mn:Fe:LiNbO₃ single crystals were prepared by the conventional Czochralski method. The UV-vis absorption spectra were measured and the shift mechanism of absorption edge was also investigated in this paper. In Mg:Mn:Fe:LiNbO₃ crystal, Mn and Fe locate at the deep level and the shallow level, respectively. The two-photon holographic storage is realized in Mg:Mn:Fe:LiNbO₃ crystals by using He-Ne laser as the light source and ultraviolet as the gating light. The results indicated that the recording time can be significantly reduced for introducing Mg²⁺ in the Mg:Mn:Fe:LiNbO₃ crystal.     

Variational analysis of Er:Ti:LiNbO3 waveguide lasers based on Gaussian/two-half Gaussian mode field distribution

Starting with two dimensional, scalar wave equation, a variational equation was established for the fundamental TE and TM modes guided in Ti:LiNbO₃ waveguides on the basis of assuming a symmetric Gaussian mode field function in the width direction and two-half Gaussian trial functions in the depth direction. The controllable waveguide fabrication parameters, including channel width, diffusion temperature, initial Ti-strip thickness and diffusion time, dependent of fundamental mode size, effective pump area, coupling efficiency between pump and laser modes, and the coupling loss between a Ti:LiNbO₃ waveguide and a fiber were numerically calculated for Z-cut Er:Ti:LiNbO₃ channel waveguide lasers at three possible emission wavelengths 1532,1563 and 1576 nm and two possible pump wavelengths 1480 and 980 nm. The calculated results were compared with those of Gaussian/Hermite–Gaussian mode field distribution in detail.     

Pulsed laser deposition of Er:BaTiO3 for planar waveguides

Laser radiation is used for the deposition of dielectric erbium doped BaTiO₃ thin films for photonic applications. Pulsed laser deposition with KrF excimer laser radiation (wavelength 248 nm, pulse duration 20 ns) is used to grow dense, transparent, amorphous, poly-crystalline and single crystalline erbium doped BaTiO₃ thin films. Visible emission due to up-conversion luminescence (wavelength 528 nm and 548 nm) under excitation with diode laser radiation at a wavelength of 970–985 nm is investigated as a function of the erbium concentration of 1–20 mol% and structural film properties. PACS 81.15.Fg; 42.55.Wd; 68.55; 78.55.Hx     

Laser-induced voltage effects in Ca3Co4O9 thin films on tilted LaAlO3（001） substrates grown by chemical solution deposition

Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10 tilted LaAlO3(001) substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, open-circuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions.     

Optical waveguides in LiNbO<Subscript>3</Subscript> and stoichiometric LiNbO<Subscript>3</Subscript> crystals by proton exchange

The formation of optical planar waveguides in LiNbO₃ and stoichiometric LiNbO₃ crystals by proton exchange was reported. The prism-coupling method was used to characterize the dark-line spectroscopy at the wavelength of 633 and 1539 nm, respectively. The mode optical near-field outputs from proton-exchanged LiNbO₃ and SLN waveguides at 633 nm were presented. The mode field from stoichiometric LiNbO₃ (SLN) waveguide is lighter and more uniform than that from LiNbO₃ waveguide, which means the quality of the waveguide in SLN crystal is better than that of the LiNbO₃ waveguide. For proton-exchanged LiNbO₃ waveguides, the evolution of the refractive index profile with annealing was presented. The disorder profiles of Nb atoms in proton-exchanged LiNbO₃ waveguides were obtained by Rutherford backscattering/channeling technique. It is shown that the longer the exchange time, the larger the displacement of Nb atoms. Supported by the National Natural Science Foundation of China (Grant No. 10475052) and the Scientific Research Start-up Financing of Qufu Normal University     

Nd:YVO4声光调Q腔内倍频457 nm蓝光激光器

脉冲蓝光激光器在水下探测、水下通信和遥感方面有着重要的应用前景。根据高斯光束传输的ABCD矩阵,设计了对热效应不灵敏的Z型谐振腔。利用808 nm激光二极管(LD)端面抽运Nd:YVO4晶棒,在室温下实现了4F3/2→4I9/2准三能级激光谱线跃迁。通过声光调Q和LBO腔内倍频,获得了稳定的高重复频率、高峰值功率457 nm蓝光激光输出。当抽运功率为30 W时,在重复频率为10 kHz下,获得最大单脉冲能量为56 μJ ,脉冲宽度为217 ns,峰值功率达258 W; 在重复频率为20 kHz下,获得最大平均功率为760 mW,脉冲宽度为261 ns,峰值功率为146 W。在最大平均输出功率下测量了脉冲457 nm蓝光激光器的功率稳定性,20 min之内其最大不稳定度小于2%。