Mechanochemical Synthesis and Characterization of GaN Nanocrystals

A solid-state displacement reaction of Ga₂O₃ with Mg₃N₂ has been used to synthesize GaN nanocrystals by mechanochemical processing. X-ray diffraction, transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements indicated that the nanocrystals had a hexagonal structure and sizes ranging from 4 to 20nm. Optical absorption and transmission measurement showed the bandgap of the nanocrystals was consistent with that of bulk GaN samples (3.43eV). This study demonstrates that mechanochemical processing has significant potential for the synthesis of GaN nanocrystals in a simple and efficient way.     

TEM-characterization of magnetic samarium- and cobalt-rich-nanocrystals formed in hexagonal SiC

Using analytical transmission electron microscopy techniques, nanocrystals embedded in 4H–SiC are studied which formed after high dose samarium (Sm), cobalt (Co), and Sm-and-Co-ion implantations and annealing. SmSi₂, Sm₅C₂, Co₂Si and SmCo-rich nanocrystals have been identified in terms of their crystallography, shape, strain, size, and orientation relationship to the matrix. It is shown, moreover, that cluster creations of foreign atoms (nanocrystals) and of vacancies (voids) are connected and their sizes increase with implantation dose. Carbon onions surrounding the nanocrystals have been found and this carbon excess has been interpreted as a consequence of preferred formation of foreign atom-silicide nanocrystals. For the case of Co implanted 4H–SiC, Lorentz microscopy has been applied revealing both non-magnetic and single-domain ferromagnetic nanocrystals.     

Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (R_S) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating R_S was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs.     

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested.     

Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si（111） substrates

A mass of GaN nanowires has been successfully synthesized on Si（111） substrates by magnetron sputtering through ammoniating Ga2O3/Co films at 950℃. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscope and Fourier transformed infrared spectra are used to characterize the samples. The results demonstrate that the nanowires are of single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanowires is also discussed.     

High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon

Off‐state and vertical breakdown characteristics of AlGaN/AlN/GaN high‐electron‐mobility transistors (HEMTs) on high‐resistivity (HR)‐Si substrate were investigated and analysed. Three‐terminal off‐state breakdown (BV_gd) was measured as a function of gate–drain spacing (L_gd). The saturation of BV_gd with L_gd is because of increased gate leakage current. HEMTs with L_gd = 6 µm exhibited a specific on‐resistance R_DS[ON] of 0.45 mΩ cm². The figure of merit (FOM = BV_gd²/R_DS[ON]) is as high as 2.0 × 10⁸ V² Ω^–1 cm^–2, the highest among the reported values for GaN HEMTs on Si substrate. A vertical breakdown of ～1000 V was observed on 1.2 µm thick buffer GaN/AlN grown on Si substrate. The occurrence of high breakdown voltage is due to the high quality of GaN/AlN buffer layers on Si substrate with reduced threading dislocations which has been confirmed by transmission electron microscopy (TEM). This indicates that the AlGaN/AlN/GaN HEMT with 1.2 µm thick GaN/AlN buffer on Si substrate is promising candidate for high‐power and high‐speed switching device applications. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas

ICP power/RF power, operating pressure, and Cl₂/BCl₃ gas mixing ratio are altered to investigate the effect of input process parameters on the etch characteristics of GaN films. The etch selectivity of GaN over SiO₂ and photoresist is studied. Although higher ICP/RF power can obtain higher GaN/photoresist etch selectivity, it can result in faceting of sidewall and weird sidewall profile due to photoresist mask erosion. Etch rates of GaN and SiO₂ decrease with the increase of operating pressure, and etch selectivity of GaN over SiO₂ increases with the increasing operating pressure at fixed ICP/RF power and mixture component. The highest etch selectivity of GaN over SiO₂ is 7.92, and an almost vertical etch profile having an etch rate of GaN close to 845.3 nm/min can be achieved. The surface morphology and root-mean-square roughness of the etched GaN under different etching conditions are evaluated by atomic force microscopy. The plasma-induced damage of GaN is analyzed using photoluminescence (PL) measurements. The optimized etching process, used for mesa formation during the LED fabrication, is presented. The periodic pattern can be transferred into GaN using a combination of Cl₂/BCl₃ plasma chemistry and hard mask SiO₂. Patterning of the sapphire substrate for fabricating LED with improved extraction efficiency is also possible using the same plasma chemistry.     

Physical properties and microstructures of nanocrystals reinforced ice laser 3D print layer

Rapid prototyping based on laser alloying by the pre-placed mixed powders has been used to produce the nanocrystals reinforced three-dimensional layer in this study. Such a layer was fabricated on a TC17 titanium alloy by laser rapid prototyping (LRP) of the Co–Sb–TiB₂ mixed powders in ice. Scanning electron microscope (SEM) and high resolution transmission electron microscopy (HRTEM) test results indicated that the ice addition was able to decrease the maximum temperature of molten pool during the LRP process, favoring the formation of nanocrystals; growth of such nanocrystals was retarded by the surrounded amorphous in a certain extent, favoring the formations of ultrafine nanoparticles (UN), and the twin crystals and the high-angle grain boundaries were also observed; differential thermal analysis (DTA) test was used to explain the physical properties and formation mechanism of amorphous–nanocrystals, and also the relationship between the amorphous and nanocrystalline phases in such a LRP layer.     

Effect of ZnO sacrificial layer thickness on the structure and optical properties of GaN nanoparticles prepared by RF magnetron sputtering

GaN nanoparticles were prepared on sapphire (0001) substrates with ZnO sacrificial layers by self assembly of Ga₂O₃ films in their reaction with NH₃. ZnO sacrificial layers with different thicknesses and Ga₂O₃ films were deposited on sapphire substrates in turn by a radio frequency (RF) magnetron sputtering system. Nitridation of the Ga₂O₃ films was then carried out in a quartz tube furnace. The effect of ZnO sacrificial layer thickness on the structure and optical properties of nanoparticles prepared by RF magnetron sputtering were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and photoluminescence (PL). GaN nanoparticles with ZnO sacrificial layers of different thicknesses possess hexagonal wurtzite crystal structure and have a preferred orientation with c axis perpendicular to the sapphire substrates. XRD, SEM, and AFM results reveal that the better-crystallinity, uniform, and well-dispersed GaN nanoparticles (～30 nm) without agglomeration were obtained with a ZnO sacrificial layer 300-nm thick. The PL result reveals that the optical properties of the GaN nanoparticles are improved with a ZnO sacrificial layer 300-nm thick. Therefore, we suggest that a ZnO sacrificial layer 300-nm thick is the most suitable condition for obtaining better-quality GaN nanoparticles with good luminescence performance. Moreover, the mechanism of the formation of GaN nanoparticles with ZnO sacrificial layers is also discussed.     

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

Single crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga₂O₃ is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga₂O₃ and the main epitaxial relationship should be and .      

溅射制备纳米晶GaN∶Er薄膜的室温发光特性

利用直流磁控共溅射方法制备了GaN:Er薄膜.X射线衍射结果显示薄膜为纳米多晶结构,根据谢乐公式,计算得到了GaN薄膜晶粒的平均大小为58nm;透射电子显微镜结果显示为非晶基质中镶嵌了GaN纳米颗粒,尺寸在6—8nm之间;紫外可见谱结果表明在500—700nm的可见光范围内,薄膜的平均透过率大于80%,在紫外可见谱基础上,利用Tauc公式计算得到了纳米晶GaN薄膜的光学带隙为322eV;最后,测量了GaN:Er薄膜的室温光致发光谱,获得了Er³⁺离子在554nm处的强烈绿光发射. 关键词： 纳米晶GaN薄膜 3+掺杂')" href="#">Er³⁺掺杂 光学带隙 光致发光     

Anisotropic electrical properties of Bi0.5(Na0.75K0.25)0.5TiO3 ceramics fabricated by reactive templated grain growth (RTGG)

We have fabricated lead-free Bi_0.5(Na_0.75K_0.25)_0.5TiO₃ (BNKT) ceramics by a conventional process (CP) and reactive templated grain growth (RTGG) methods. The effect of grain orientation on structure, dielectric, complex impedance and electrical properties was investigated. The phase formation and grain morphology of BNKT ceramics were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. High dielectric constant and low dielectric loss was observed for grain oriented (textured) BNKT ceramics. Complex impedance, temperature dependent ac and dc conductivity were performed to explore the conduction behavior of the prepared BNKT ceramics.     

Self-assembly of rutile (α-TiO<Subscript>2</Subscript>) nanoclusters into nanorods in microemulsions at low temperature and their photocatalytic performance

A novel method – inverse microemulsion has been developed not only for synthesizing low cost TiO₂ nanocrystals but also for the first time making these nanocrystals self-assemble into various nanoparticles at 85°C. By variation of the volume ratios of oil to water in reverse microemulsions, the morphologies of obtained samples turned from nanoclusters to nanospherules, then grew into nanodumbbells, and became nanorods at last. It could be observed by transmission electron microscope (TEM) directly. The resulting materials were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and high-resolution transmission electron microscope (HRTEM). The photocatalytic activity of TiO₂ was tested with photodegradation of Methyl Orange (MO) in water. The catalyst consisting of nanorods showed the highest photocatalytic activity, which is due to its large surface area. Furthermore, the mechanism of self-assembly of TiO₂ nanocrystals was discussed in detail.     

Splitting of X-ray diffraction peak in (Ge:SiO2)/SiO2 multilayers

(Ge:SiO₂)/SiO₂ multilayers were fabricated for exploring the influence of the stress on the structure of Ge nanocrystals. When annealed at 800 °C, the multilayers show a clear splitting (fine structure) of the Ge (220) X-ray diffraction peak and have a preferred orientation. Similar effects cannot take place in the multilayers annealed at higher or lower temperature. Analyses of Raman scattering, X-ray diffraction spectroscopy, and transmission electron microscope observations suggest that the observed phenomena arise from compressive stress exerted on Ge nanocrystals, which is induced by the confinement of both the SiO₂ matrix in the cosputtered layer and neighboring SiO₂ layers. The stress may cause an orthorhombic distortion of the diamond structure of bulk Ge. This will lead to the disappearance of the (111) and (311) diffraction peaks and the splitting of the (220) peak. This kind of (Ge:SiO₂)/SiO₂ multilayers enables us to control the sizes of the Ge crystallites and enhance the stress, and is thus promising in forming new nanocrystal structures.     

Low-temperature synthesis and growth of superparamagnetic Zn0.5Ni0.5Fe2O4 nanosized particles

Mono-disperse spinel Ni_0.5Zn_0.5Fe₂O₄ nanosized particles have been synthesized via a hydrothermal method at low temperature. X-ray diffraction (XRD), transmission electron microscope (TEM) and high-resolution transmission electron microscope (HRTEM) analysis indicated that the synthesized nanocrystals were of pure cubic spinel structure with the size about 6-20 nm. The activation energy of grain growth is 35.06 kJ/mol experimented by the Arrhenius equation. A primary experimental model was put forward to shed light on the growth mechanism of crystallined spinel Ni-Zn ferrite nanosized particles under hydrothermal conditions. The magnetic measurements shows that the prepared Ni_0.5Zn_0.5Fe₂O₄ nanoparticle possess good superparamagnetic behavior.     

水热法制备不同形貌和结构的BiVO4粉末

采用水热合成法,选择不同比例的起始原料、反应温度、反应时间、pH值和表面活性剂,制备出不同形貌和结构的BiVO₄粉末.采用X射线衍射、透射电子显微镜、扫描电子显微镜、拉曼、傅里叶红外和紫外-可见吸收光谱技术对产物进行分析表征.结果表明,提高n_Bi/n_V或反应液pH值,可得到纯的单斜晶系白钨矿型BiVO₄粉末;水热温度和水热时间的不同则得到不同尺寸和内部结构的BiVO₄粉末.另外,不同表面活性剂的加入则主要影响BiVO₄的微观形貌. 关键词： 4')" href="#">BiVO₄ 水热法 光催化     

Fabrication,morphology and optical properties of GaN nanorods by ammoniating Ga2O3/Nb films

Wurtzite GaN nanorods have been successfully synthesized on Si(111) substrates through ammoniating Ga₂O₃/Nb films under flowing ammonia atmosphere at 950 ^°C in a quartz tube. The nanorods have been confirmed as hexagonal wurtzite GaN by X-ray diffraction (XRD) and selected-area electron diffraction (SAED). Scanning electron microscopy (SEM) and field-emission transmission electron microscope (FETEM) reveal that the nanorods are straight and uniform, with a diameter of ranging from 100 to 200 nm and lengths up to several microns. The photoluminescence spectra (PL) measured at room temperature only exhibit a strong emission peak at 368.5 nm. Finally, the growth mechanism of GaN nanorods is also briefly discussed.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

GaN-nanowire-based dye-sensitized solar cells

GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO _x core–shell structures, and we show that coating of GaN nanowires with a TiO _x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm² and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.     

Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films

Flower-shape clustering GaN nanorods are successfully synthesized on Si（111） substrates through ammoniating Ga2O3/ZnO films at 950℃. The as-grown products are characterized by x-ray diffraction （XRD）, scanning electron microscope （SEM）, field-emission transmission electron microscope （FETEM）, Fourier transform infrared spectrum （FTIR） and fluorescence spectrophotometer. The SEM images demonstrate that the products consist of flower-shape clustering GaN nanorods. The XRD indicates that the reflections of the samples can be indexed to the hexagonal GaN phase and HRTEM shows that the nanorods are of pure hexagonal GaN single crystal. The photoluminescence （PL） spectrum indicates that the GaN nanorods have a good emission property. The growth mechanism is also briefly discussed.