| Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films |
| |
| 作者姓名： | 薛守斌 庄惠照 薛成山 胡丽君 李保理 张士英 |
| |
| 作者单位： | Institute of Semiconductors, Shandong Normal University, Jinan 250014,
China;Institute of Semiconductors, Shandong Normal University, Jinan 250014,
China;Institute of Semiconductors, Shandong Normal University, Jinan 250014,
China;Institute of Semiconductors, Shandong Normal University, Jinan 250014,
China;Institute of Semiconductors, Shandong Normal University, Jinan 250014,
China;Institute of Semiconductors, Shandong Normal University, Jinan 250014,
China |
| |
| 基金项目： | Project supported by the State Key Program of the
National Natural Science Foundation of China (Grant No~90201025) and
the National Natural Science Foundation of China (Grant No~90301002). |
| |
| 摘 要： | Flower-shape clustering GaN nanorods are successfully synthesized on Si（111） substrates through ammoniating Ga2O3/ZnO films at 950℃. The as-grown products are characterized by x-ray diffraction （XRD）, scanning electron microscope （SEM）, field-emission transmission electron microscope （FETEM）, Fourier transform infrared spectrum （FTIR） and fluorescence spectrophotometer. The SEM images demonstrate that the products consist of flower-shape clustering GaN nanorods. The XRD indicates that the reflections of the samples can be indexed to the hexagonal GaN phase and HRTEM shows that the nanorods are of pure hexagonal GaN single crystal. The photoluminescence （PL） spectrum indicates that the GaN nanorods have a good emission property. The growth mechanism is also briefly discussed.
|
| 关 键 词： | 花朵形团簇 氮化镓纳米棒 合成方法 磁控管溅射 充氨三氧化二镓薄膜 |
| 收稿时间： | 8/3/2006 12:00:00 AM |
| 修稿时间： | 2006-08-032007-01-15 |
Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films |
| |
| Xue Shou-Bin,Zhuang Hui-Zhao,Xue Cheng-Shan,Hu Li-Jun,Li Bao-Li and Zhang Shi-Ying.Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films[J].Chinese Physics B,2007,16(5):1405-1409. |
| |
| Authors: | Xue Shou-Bin Zhuang Hui-Zhao Xue Cheng-Shan Hu Li-Jun Li Bao-Li and Zhang Shi-Ying |
| |
| Institution: | Institute of Semiconductors, Shandong Normal University, Jinan 250014, China |
| |
| Abstract: | Flower-shape clustering GaN nanorods are successfully synthesized on Si(111)
substrates through ammoniating Ga2O3/ZnO films at 950℃.
The as-grown products are characterized by x-ray diffraction (XRD), scanning
electron microscope (SEM), field-emission transmission electron microscope
(FETEM), Fourier transform infrared spectrum (FTIR) and fluorescence
spectrophotometer. The SEM images demonstrate that the products consist of
flower-shape clustering GaN nanorods. The XRD indicates that the reflections
of the samples can be indexed to the hexagonal GaN phase and HRTEM shows
that the nanorods are of pure hexagonal GaN single crystal. The
photoluminescence (PL) spectrum indicates that the GaN nanorods have a good
emission property. The growth mechanism is also briefly discussed. |
| |
| Keywords: | GaN magnetron sputtering ammoniate |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
