制备工艺对Zn1-xMgxO薄膜结构及光学性能的影响

采用脉冲激光沉积（PLD）方法在单晶Si（100）衬底上沿c轴方向生长单晶Zn_1-xMg_xO薄膜,通过X射线衍射（XRD）、原子力显微镜（AFM）、扫描电镜（SEM）和荧光光谱（PL）研究了膜厚、Mg含量、退火温度及氧气氛等制备工艺对Zn_1-xMg_xO薄膜的结构、形貌和光学性质的影响.实验结果表明,Mg含量x≤0.15时, Zn_{关键词： 1-x}Mg_xO薄膜')" href="#">Zn_1-xMg_xO薄膜 制备工艺 结构 光学性质     

Zn1-xMgxO薄膜的光致发光特性研究

采用脉冲激光沉积方法在单晶Si(100)衬底上制备出c轴取向的Zn1-xMgxO单晶薄膜,通过荧光光谱仪研究了薄膜的光致发光特性.实验结果表明,Mg含量增加,Zn1-xMgxO单晶薄膜的紫外发光峰蓝移,发光峰强度减弱,缺陷发光强度增强.同时发现,由于Mg的掺杂,引入了一些束缚能较大的局域束缚态.对于氧气氛下制备的样品,实验发现紫外峰和绿光带发光峰同时增强,但是R值减小,紫外峰红移.对绿光发光机理研究发现,绿光发光带主要与锌空位、氧间隙(Oi)或锌位氧(OZn)等缺陷有关,它是由多个缺陷发光峰组成,各缺陷发光峰强度相对变化导致了绿光发光带的整体移动.     

Tb$lt;sub$gt;0.3$lt;/sub$gt;Dy$lt;sub$gt;0.6$lt;/sub$gt;Pr$lt;sub$gt;0.1$lt;/sub$gt;(Fe$lt;sub$gt;1-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;Al$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;)$lt;sub$gt;1.95$lt;/sub$gt;合金的磁性、磁致伸缩和穆斯堡尔谱研究

系统研究了室温下Tb_0.3Dy_0.6Pr_0.1（Fe_1-xAl_x）_1.95 （x=0.05,0.1,0.15,0.2,0.25,0.3）合金中元素Al替代Fe对结构、磁性、磁致伸缩性能和自旋重取向的影响.测量结果发现,x<0.2时Tb_0.3Dy_0.6Pr_0.1（Fe_1-xAl_x）_1.95合金基本上是纯的单相,x=0.2时出现其他杂相,杂相随Al替代量的增加不断增多.随Al替代量x的增加,点阵常数a接近于线性增大,Curie温度T_C逐渐下降,而矫顽力H_c急剧下降.振动样品磁强计（VSM）测量发现,磁化强度M随Al替代量x的变化较为复杂.VSM计和磁致伸缩效应测量共同表明,少量Al的替代有利于降低磁晶各向异性,而且随着Al替代量x的增多磁致伸缩系数快速减小,x>0.15时巨磁致伸缩效应消失.穆斯堡尔效应研究发现,随Al含量的增加Tb_0.3Dy_0.6Pr_0.1（Fe_1-xAl_x）_1.95合金中易磁化轴可能在{110}面逐渐偏离了立方晶体的主对称轴,发生自旋重取向,从而引起合金宏观磁性、磁致伸缩性能的变化. 关键词： 磁致伸缩 立方Laves相 自旋重取向 穆斯堡尔谱     

Ca$lt;sub$gt;2$lt;/sub$gt;Si（O$lt;sub$gt;4-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;N$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;）：Eu$lt;sup$gt;2+$lt;/sup$gt;绿色荧光粉的制备及其发光性能

利用在Ca-Si-O干凝胶前驱体中添加Si₃N₄的方法于非还原气氛下合成了含N固溶体Ca₂Si（O_4-xN_x）：Eu²⁺绿色荧光粉. 通过X射线衍射仪、扫描电子显微镜以及荧光分光光度计分别分析了产物的物相结构、颗粒形貌和发光性能. 结果显示,Si₃N₄与前驱体的混合物在非还原气氛（纯氮气）下于1100℃焙烧后获得含N固溶体Ca₂Si（O_4-xN_x）：Eu²⁺荧光粉,特别是其中Eu³⁺被还原为Eu²⁺,产物的晶体结构与βup -Ca₂SiO₄相一致. Ca₂Si（O_4-xN_x）：Eu²⁺能够被270–400 nm 范围内的紫外线有效激发,其发射光谱呈宽带发射. 随着N含量的增加,发射峰出现一定程度红移（501–504 nm）,而且发光强度显著提高. 当Eu²⁺浓度为0.25 mol%时发光强度达最大值,浓度超过0.25 mol%时,发光强度显著降低,出现浓度猝灭 效应. 关键词： 白光LED 荧光粉 溶胶凝胶法 3N₄')" href="#">Si₃N₄     

具有poly-Si$lt;sub$gt;1-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;Ge$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;栅的应变SiGep型金属氧化物半导体场效应晶体管阈值电压漂移模型研究

针对具有poly-Si_1-xGe_x栅的应变SiGe p型金属氧化物半导体场效应晶体管(PMOSFET), 研究了其垂直电势与电场分布, 建立了考虑栅耗尽的poly-Si_1-xGe_x栅情况下该器件的等效栅氧化层厚度模型, 并利用该模型分析了poly-Si_1-xGe_x栅及应变SiGe层中Ge组分对等效氧化层厚度的影响. 研究了应变SiGe PMOSFET热载流子产生的机理及其对器件性能的影响, 以及引起应变SiGe PMOSFET阈值电压漂移的机理, 并建立了该器件阈值电压漂移模型, 揭示了器件阈值电压漂移随电应力施加时间、栅极电压、poly-Si_1-xGe_x栅及应变SiGe层中Ge组分的变化关系. 并在此基础上进行了实验验证, 在电应力施加10000 s时, 阈值电压漂移0.032 V, 与模拟结果基本一致, 为应变SiGe PMOSFET及相关电路的设计与制造提供了重要的理论与实践基础. 关键词： 应变SiGep型金属氧化物半导体场效应晶体管 1-xGe_x栅')" href="#">poly-Si_1-xGe_x栅 热载流子 阈值电压     

分子束外延法在Sapphire衬底上生长的Zn1－xMgxO薄膜折射率及厚度的测试

利用偏振光椭圆率测量仪对分子束外延(MBE)法在Sapphire衬底上生长的Zn_1-xMg_xO 薄膜的薄膜折射率和厚度进行了测试. 结合ICP法测得的薄膜中的Mg组成量，经数值拟合，导出表征薄膜厚度与薄膜生长条件、薄膜折射率与薄膜中的Mg组成量之间关系的曲线，为MBE法在Sapphire衬底上生长Zn_1-xMg_xO 薄膜时控制薄膜厚度以及在制作Zn_1-xMg_xO 薄膜的波导时控制薄膜的折射率提供了理论依据. 关键词： ZnMgO薄膜 偏振光椭圆率测量仪 折射率 分子束外延(MBE)     

Zn1-xCoxO稀磁半导体薄膜的结构及其磁性研究

利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn_1-xCo_xO (x＝0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn₁-xCo_xO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn_1-xCo_xO 稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn_1-xCo_xO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn_1-xCo_xO产生室温铁磁性的主要原因. 关键词： 1-xCo_xO稀磁半导体')" href="#">Zn_1-xCo_xO稀磁半导体 X射线吸收精细结构谱 脉冲激光气相沉积法     

MC与$lt;i$gt;M$lt;/i$gt;$lt;sub$gt;$lt;i$gt;n$lt;/i$gt;+1$lt;/sub$gt;$lt;i$gt;AC$lt;/i$gt;$lt;sub$gt;$lt;i$gt;n$lt;/i$gt;$lt;/sub$gt;稳定性与电子特征的第一性原理研究

研究MC与M_n+1AC_n(M=Sc, Ti, V, Cr, Mn; A=Al, Si, P, S; n=1, 2, 3)结构的稳定性与电子特征有利于探究三元层状结构M_n+1AC_n稳定性的内在原因和设计新型M_n+1AC_n结构. 第一性原理计算研究表明, M-3d与C-2p轨道间的电子转移对MC与M_n+1AC_n 的形成焓有较大影响. 供电子能力较强的前过渡金属可以形成稳定的MC结构. 计算结果显示, MC结构是缺电子体系, 其趋向于与具有一定供电子能力的MA结构结合形成M_n+1AC_n. 与M₂PC和M₂SC 相比, M₂AlC和M₂SiC可以更为容易地被分离成二维 M₂C结构. 关键词： MAX相结构 第一性原理 电子结构 过渡金属碳化物     

Al和N共掺p型Zn1-xMgxO电子结构的第一性原理计算

采用密度泛函理论下的第一性原理平面波超软赝势方法,对Zn_1-xMg_xO超晶胞和掺杂Al,N后的Zn_1-xMg_xO超晶胞分别进行了优化计算.结合广义梯度近似计算了Al和N共掺杂后Zn_1-xMg_xO的能带结构、电子态密度和Mulliken电荷布居分布.计算表明：掺入N原子的2p态电子为Zn_1-xMg_xO价带顶提供空穴载流子,使Zn_1-xMg_xO价带顶向高能方向移动;掺入Al原子的3p态电子则与N原子的2p态电子在费米能级附近发生轨道杂化,使费米能级处价带能级展宽,Al和N共掺杂可获得p型Zn_1-xMg_xO. 关键词： 密度泛函理论 1-xMg_xO')" href="#">Zn_1-xMg_xO 电子结构 共掺杂     

过渡金属与F共掺杂ZnO薄膜结构及磁、光特性

采用溶胶-凝胶法在玻璃衬底上制备了过渡金属元素与F共掺杂Zn_0.98-xTM_xF_0.02O (TM_x=Cu_0.02, Ni_0.01, Mn_0.05, Fe_0.02, Co_0.05)薄膜, 进而利用X射线衍射仪、扫描电子显微镜、紫外-可见透过谱、光致发光及振动样品磁强计等研究了薄膜的表面形貌、微结构、禁带宽度及光致发光(PL)和室温磁学特性. 研究表明: 掺杂离子都以替位的方式进入了ZnO晶格, 掺杂不会破坏ZnO的纤锌矿结构. 其中Zn_0.93Co_0.05F_0.02O薄膜样品的颗粒尺寸最大, 薄膜的结晶度最好且c轴择优取向明显; Zn_0.93Mn_0.05F_0.02O薄膜样品的颗粒尺寸最小, 薄膜结晶度最差且无明显的c轴择优取; Cu, Ni, Fe与F共掺杂样品的颗粒尺寸大小几乎相同. TM掺杂样品均表现出很高的透过率, 同时掺杂后的薄膜样品的禁带宽度都有不同程度的红移. PL谱观察到Zn_0.98-xTM_xF_0.02O薄膜的发射峰主要由较强的紫外发射峰和较弱的蓝光发射峰组成. Zn_0.93Mn_0.05F_0.02O薄膜样品的紫外发光峰最弱, 蓝光发射最强, 饱和磁化强度最大; 与之相反的是Zn_0.96Cu_0.02F_0.02O薄膜, 其紫外发光峰最强, 蓝光发射最弱, 饱和磁化强度最小. 结合微结构和光学性质对Zn_0.98-xTM_xF_0.02O薄膜的磁学性质进行了讨论.     

Optical properties of MgxZn1−xO thin films deposited on silicon and sapphire substrate by rf magnetron sputtering

The index dispersion at UV–VIS range for polycrystalline Mg_xZn_1−xO films on silicon with different Mg concentration was obtained by spectroscopic ellipsometry (SE) method. It decreases with the increase of the Mg content. Above the relative peak wavelength, they are well fitted by the first-order Sellmeier relation. The band gap of films on sapphire of different Mg content was determined from transmission measurements. Photoluminescence (PL) illustrated that for Mg_xZn_1−xO films every PL peak corresponded to a special excitation wavelength. The wavelength of the PL peak was proportional to the special excitation wavelength. A strong peak was obtained in the blue band for the films due to the large amount of oxygen vacancies caused by excess Zn and Mg atoms, while weak peak at ultraviolet band.     

The optical properties of MgxZnl-xO thin films

Mg_xZn_1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of Mg_xZn_1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400--760\,nm at the incident angle of 70℃. Both absorption coefficients and optical band gaps of Mg_xZn_1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of Mg_xZn_1-xO films shift to higher energies and band gaps linearly increase from 3.24.eV at x=0 to 3.90\,eV at x=0.30. These results provide important information for the design and modelling of ZnO/ Mg_xZn_1-xO heterostructure optoelectronic devices.     

Oxygen flux influence on the morphological, structural and optical properties of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

The Zn_1−xMg_xO thin films were grown on Al₂O₃ substrate with various O₂ flow rates by plasma-assisted molecular beam epitaxy (P-MBE). The growth conditions were optimized by the characterizations of morphology, structural and optical properties. The Mg content of the Zn_1−xMg_xO thin film increases monotonously with decreasing the oxygen flux. X-ray diffractometer (XRD) measurements show that all the thin films are preferred (0 0 2) orientated. By transmittance and absorption measurements, it was found that the band gap of the film decreases gradually with increasing oxygen flow rate. The surface morphology dependent on the oxygen flow rate was also studied by field emission scanning electron microscopy (FE-SEM). The surface roughness became significant with increasing oxygen flow rate, and the nanostructures were formed at the larger flow rate. The relationship between the morphology and the oxygen flow rate of Zn_1−xMg_xO films was discussed.     

Structural,optical, FTIR and photoluminescence properties of Zn0.96−xCo0.04CuxO (x=0.03, 0.04 and 0.05) nanopowders

Un-hydrogenated and hydrogenated Cu, Co co-doped ZnO (Zn_0.96−xCo_0.04Cu_xO, x=0.03, 0.04 and 0.05) nanopowders have been synthesized by co-precipitation method. The synthesized samples have been characterized by powder X-ray diffraction, energy dispersive X-ray spectra, UV–Visible spectrophotometer and Fourier transform infrared spectroscopy. The calculated average crystalline size increases from 37.3 to 50.6 nm for un-hydrogenated samples from x=0.03 to 0.05 and it changes from 29.4 to 34.9 nm for hydrogenated samples. The change in lattice parameters, micro-strain, a small shift of X-ray diffraction peaks towards lower angles and reduction in energy gap reveal the substitution of Cu²⁺ ions into Zn–Co–O lattice. The hydrogenation effect reduces the particle size and induces the more uniform distribution of particles than the un-hydrogenated samples which is confirmed by SEM micrographs. Photoluminescence spectra of Zn_0.96−xCo_0.04Cu_xO system shows that red shift in near band edge ultraviolet emission from 393 to 403 nm with suppressing intensity and a blue shift in green band emission from 537 to 529 nm with enhancing intensity confirms the substitution of Cu into the Zn–Co–O lattice.     

纤锌矿BexZn1-xO合金能隙弯曲系数的第一原理研究

采用密度泛函理论框架下的第一性原理平面波超软赝势方法, 对纤锌矿Be_xZn_1-xO合金进行能隙特性、弯曲系数和结构参数的计算. 结果表明: Be_xZn_1-xO合金的能隙和弯曲系数都随Be掺杂组分的增大而增大. 通过修正Be_xZn_1-xO合金的能隙值得知其合金弯曲系数b为6.02 eV, 这与实验值接近. 纤锌矿Be_xZn_1-xO合金的能隙弯曲系数过大主要来源于体积形变和电荷转移的贡献. 文中还分析了Be_xZn_1-xO合金的晶格常数、 平均键长和平均次近邻原子距离与Be组分的关系.     

Be-composition effect on structure, electronic and optical properties of BexZn1-xO alloys

This paper carries out first principles calculation of the structure,electronic and optical properties of Be x Zn 1 x O alloys based on the density-functional theory for the compositions x = 0.0,0.25,0.5,0.75,1.0.The lattice constants deviations of alloys obey Vegard’s law well.The Be x Zn 1 x O alloys have the direct band gap(Γ-Γ) character,and the bowing coefficients are less than the available theoretical values.Moreover,it investigates in detail the optical properties(dielectric functions,absorption spectrum and refractive index) of these ternary mixed crystals.The obtained results agree well with the available theoretical and experimental values.     

Structural, optical and electrical properties of Zn1−xCdxO thin films prepared by PLD

Ternary polycrystalline Zn_1−xCd_xO semiconductor films with cadmium content x ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn_1−xCd_xO films decreases continuously as the Cd content x increases. Both photoluminescence and optical measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. The increase in Cd content x also leads to the broadening of the emission peak. The resistivity of Zn_1−xCd_xO films decreases evidently for higher values of Cd content x. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn_1−xCd_xO films potential candidate for optoelectronic device.