红色荧光粉La2Mo2O9:Eu3+,W6+的制备及发光性能

采用高温固相法合成出La₂Mo₂O₉:Eu³⁺,W⁶⁺系列红色荧光粉,其结构为立方晶系的β- La₂Mo₂O₉。在395 nm光激发下,样品La_1.40Mo₂O₉:0.60Eu³⁺发射出很强的红光,最强发射峰位于616 nm处。适量地掺杂W⁶⁺离子可以提高样品的激发和发射强度,在395 nm光激发下,La_1.40Mo_1.84O₉:0.60Eu³⁺,0.16W⁶⁺荧光粉的Eu³⁺的⁵D₀→⁷F₂跃迁发射强度最大,是样品La_1.40Mo₂O₉:0.60Eu³⁺的1.23倍。最后,将La_1.40Eu_0.60Mo_1.84O₉:0.16W⁶⁺荧光粉与~395 nm发射的InGaN芯片一起制作成红光发光二极管(LED),该LED发射出很强的红光。     

烧结温度对La0.9Sr0.1FeO3热电性能的影响

利用传统的固相反应分别在1250℃,1300℃,1350℃.烧结条件下制备出钙钛矿结构的La_0.9Sr_0.1FeO₃陶瓷样品.样品的XRD粉末衍射结果显示不同烧结温度的La_0.9Sr_0.1FeO₃陶瓷样品都是单相的正交结构,同时晶胞体积随着烧结温度的升高而减小.从样品的SEM结果看出,随着烧结温度的升高,晶粒逐渐变大,并且晶粒间的空隙逐渐减小,样品更加致密.在室温到800℃的 关键词： 铁酸镧陶瓷 热电性能 烧结温度     

Al2O3-Y2O3-ZrO2三相复合陶瓷的介电谱研究

采用传统的固相反应法,在1400–1500 ℃下烧结,制备得到Al₂O₃-Y₂O₃-ZrO₂三相复合陶瓷.样品的结构、形貌和电性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)及介电谱表征.XRD表明此三相复合体系无其他杂相,加入Y₂O₃及ZrO₂后使得Al₂O₃成瓷温度降低;SEM表明此体系晶粒直径为200–500 nm,并且样品随烧结温度的升高而变得更加致密,晶界更加清晰;介电损耗谱中出现峰值弛豫现象,根据Cole-Cole复阻抗谱得出其为非德拜弛豫. 关键词： 2O₃-Y₂O₃-ZrO₂三相陶瓷')" href="#">Al₂O₃-Y₂O₃-ZrO₂三相陶瓷 介电弛豫 阻抗谱 热导率     

La2O3对Yb:Y2O3透明陶瓷光谱性能的影响

研究了La₂O₃对Yb：Y₂O₃透明陶瓷光谱性能的影响，添加适量La₂O₃以后，Yb：Y₂O₃透明陶瓷的吸收峰和发射峰的位置不变，但由于La³⁺的离子半径大于Y³⁺的离子半径，在Y₂O₃中引入La³⁺离子后，导致Y₂O₃晶格常数变大，晶场强度变弱，同时降低了Y₂O₃晶体的有序度，致使发射峰强度有所下降，发射截面变小.过量的La₂O₃（x=0.16）造成Yb³⁺激活离子发射强度明显下降；其荧光寿命在添加La₂O₃后总体增大45%—60%. 关键词： 氧化镧 氧化钇 透明陶瓷 光谱性能     

V2O5-Al2O3助烧剂对低温烧结Li-Zn微波铁氧体性能的影响

随着现代无线通信技术的进步,微波通信器件向小型化、一体化方向发展,其中低温共烧陶瓷/铁氧体技术是关键所在.针对适用于雷达移相器中的Li-Zn微波铁氧体,本文通过加入V₂O_5-Al₂O₃(VA)助烧剂实现低温烧结(低于950℃),并研究助烧剂添加量及烧结温度对于材料晶体结构、微观形貌以及磁性能(饱和磁感应强度、矫顽力、铁磁共振线宽等)的影响.VA助烧剂的参与可以在降低烧结温度的同时维持Li-Zn微波铁氧体的尖晶石晶体结构,并能促进晶粒的生长,Li-Zn铁氧体的平均晶粒尺寸由最初的0.92μm增至9.74μm.在Li-Zn铁氧体烧结过程中,VA助烧剂中的V₂O₅由于具有较低的熔点会先融化形成液相,促进晶粒的生长;同时具有较高熔点的A1₂O₃可以抑制晶粒的过大增长,使晶粒均匀化.未添加助烧剂与添加VA助烧剂(质量分数为0.18%)制备的铁氧体相比,样品的饱和磁感应强度(B_s)由144 mT增至28...     

Mo掺杂SrBi4Ti4O15陶瓷的铁电介电性能

用传统的固相烧结工艺，制备了钼掺杂铁电陶瓷样品SrBi₄Ti₄O₁₅(SBTi)铁电陶瓷SrBi_4-2x/3Ti_4-xMo_xO₁₅(x=0.00，0.003，0.012，0.03，0.06，0.09).X射线衍射的结果表明，样品均为单一的层状钙钛矿结构相，Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现，样品晶粒为片状，随掺杂量的增加，晶粒逐 关键词： 4Ti₄O₁₅')" href="#">SrBi₄Ti₄O₁₅ Mo掺杂 剩余极化 居里温度     

Zr掺杂形式对钨电子发射材料组织性能的影响

采用中频感应加热烧结方法制备了W-1.5%La₂O₃-0.1%Y₂O₃-0.1%ZrO₂和W-1.5%La₂O₃-0.1%Y₂O₃-0.08%ZrH₂电子发射材料,烧结样品的致密度约为95.5%。热电子发射测试结果表明,添加氢化锆的热电子发射材料样品的零场发射电流密度大于添加氧化锆的样品,分析认为是添加的氢化锆在烧结时,发生分解,生成活性的Zr可以捕获钨晶界中的杂质氧,净化晶界,从而提高了电子发射;维氏显微硬度表明添加氢化锆样品的硬度高于添加氧化锆的样品,分析表明是氢化锆的添加有效改善了钨晶粒之间的结合性,提升了钨电子发射材料的硬度。利用SEM,EDS,XRD、金相显微镜等表面分析设备对样品进行了表征,样品结构显示添加氢化锆与添加氧化锆相比,不仅钨晶粒尺寸由13.63 μm降至11.63 μm,而且稀土相尺寸由1.87 μm降至1.66 μm,这种组织结构的变化有利于电子发射。     

Eu3+激活的La2Mo2O9红色荧光粉的制备与性能

利用高温固相法制备了Eu³⁺掺杂的La₂Mo₂O₉红色荧光粉,并对这种荧光粉的结构及发光性质进行了研究。XRD结果表明,实验合成了单一立方相的La₂Mo₂O₉荧光粉体。该荧光粉的激发光谱由一宽带和一系列的锐峰组成;发射光谱由一系列锐峰组成,这些都与Eu³⁺的特征跃迁⁵D_J(J=0,1)和⁷F_J(J=1~4)相对应。结果表明该荧光粉可被395nm的紫外光和470nm的可见光有效激发,并发出峰值位于620nm左右的红光,亮度可达到传统红色荧光粉Y₂O₂S:Eu³⁺的1.5倍以上,这表明它可以作为蓝+黄模式白光LED的红色补光粉,也可以作为UV-LED激发三基色荧光粉体系中的红色荧光粉。研究了Eu³⁺的掺杂浓度以及不同助熔剂对样品发光性质的影响。Eu³⁺的摩尔分数为0.3时,发光强度达到最强。质量分数为3%的NH₄Cl作为助熔剂时效果最好。     

Ln2Sn2O7：Er3+纳米晶的制备及发光性能研究

采用溶胶-凝胶法合成Ln₂Sn₂O₇:Er³⁺(Ln=La,Gd,Y)纳米晶。通过X射线衍射和场发射扫描电子显微镜测试了样品的晶体结构和形貌,同时对样品的上转换发光性能进行了测试。结果表明:在980 nm连续激发光的激发下,样品主要表现为绿光发射。发射中心在528,549 nm的绿光和672 nm处的红光发射分别对应Er³⁺离子的⁴S_3/2→⁴I_15/2、²H_11/2→⁴I_15/2和 ⁴F_9/2→⁴I_15/2跃迁。以La₂Sn₂O₇:Er³⁺纳米晶为例,Er³⁺离子的摩尔分数为7%、退火温度为1 150℃是其制备的最佳条件,此时其各个发射峰的强度最高。对La₂Sn₂O₇:Er³⁺的发光强度与激发功率关系的研究表明,其绿光和红光发射均为双光子过程。激发光吸收和能量转移是La₂Sn₂O₇:Er³⁺纳米晶上转换发光的主要机制。     

Li2Mo2O6多晶材料的结构与电性能的研究

本文用固相反应烧结制备出Li₂Mo₂O₆多晶材料。经X射线分析、红外光谱和电子顺磁共振谱(EPR)的研究,确定了它的结构是Li₂Mo₂O₄和MoO₂两个晶相组成的烧结体。钼离子以四价状态存在于MoO₂晶相结构中。采用交流阻抗谱分析了晶界与温度变化的相关性。测得了样品的ln(σ_总T)-1/T 曲线是由两段直线和一段曲线所组成;总电导率化能σ_27℃=1.36×10^-3(Ω·cm)^-1,σ_115℃=1.49×10^-3(Ω·cm)^-1,σ_300℃=9.71×10^-3(Ω·cm)^-1,σ_370℃=2.42×10^-3(Ω·cm)^-1;电导活化能E₁=0.043eV,E₂=0.235eV,E_平均=0.76eV。采用维格纳极化电池法测得电子电导率σ_e,σ_e27℃=2.240×10^-5(Ω·cm)^-1,σ_e300℃=4.476×10^-3(Ω·cm)^-1。实验证明,室温下材料为固体电解质,300℃附近为良好的离子与电子混合导体。 关键词：     

Study of the microstructure influence on the transport properties of Bi86.5Sb13.5 polycrystalline alloy

This study is focused on the investigation of the transport properties of Bi_86.5Sb_13.5 polycrystalline alloys. Bulk materials were prepared by cold pressing ultrafine powders of alloy and by annealing the resulting pellets. Special care was taken to avoid contamination of the powders. Starting with powders of average grain size of 0.06 μm bulk semi-conducting sample with mean grain size respectively of 0.1, 0.8, 2.5 and 200 μm were obtained. The influence of the grain size on both electrical resistivity, thermal conductivity, thermoelectric power, thermoelectric figure of merit is presented within the range 80-330 K. The thermoelectric properties are discussed and compared with those of single crystals presented in previous studies.     

Synthesis and ion conductivity of (Bi2O3)0.75(Dy2O3)0.25 ceramics with grain sizes from the nano to the micro scale

Using (Bi₂O₃)_0.75(Dy₂O₃)_0.25 nano-powder synthesized by reverse titration co-precipitation method as raw material, dense ceramics were sintered by both Spark Plasma Sintering (SPS) and pressureless sintering. According to the predominance area diagram of Bi-O binary system, the sintering conditions under SPS were optimized. (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with relative density higher than 95% and an average grain size of 20 nm were sintered in only 10 min up to 500 °C. During the pressureless sintering process, the grain growth behavior of (Bi₂O₃)_0.75(Dy₂O₃)_0.25 followed a parabolic trend, expressed as D² − D₀² = Kt, and the apparent activation energy of grain growth was found to be 284 kJ mol^− 1. Dense (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with different grain sizes were obtained, and the effect of grain size on ion conductivity was investigated by impedance spectroscopy. It was shown that the total ion conductivity was not affected by the grain size down to 100 nm, however lower conductivity was measured for the sample with the smallest grain size (20 nm). But, although only the δ phase was evidenced by X-ray diffraction for this sample, a closer inspection by Raman spectroscopy revealed traces of α-Bi₂O₃.     

Effect of nickel doping on structural, optical and electrical properties of TiO2 nanoparticles by sol-gel method

Nickel-doped anatase TiO₂ nanoparticles have been prepared by sol-gel method. The X-ray powder diffraction study reveals that all the prepared samples have pure anatase phase tetragonal system. The average crystallite size of the prepared sample is 14 nm, when found through transmission electron microscope. A strong frequency dependence of both dielectric constant (?′) and dielectric loss (tan δ) were observed for various dopant levels at room temperature in the frequency range of 42 Hz to 5 MHz. At low frequency, the piling up of mobile charge carriers at the grain boundary produces interfacial polarization giving rise to high dielectric constant. The asymmetric shape of frequency dependence of the dielectric loss for the primary relaxation process is observed for each concentration. From the ac conductivity studies, the reduction in conductivity may arise due to the decreasing particle with the increase in Ni-dopant level.     

Synthesis of nanocrystalline Zn0.5Mn0.5Fe2O4 via in situ polymerization technique

Nanocrystalline Zn_0.5Mn_0.5Fe₂O₄ was synthesized through the pyrolysis of polyacrylate salt precursors prepared via in situ polymerization of the metal salts and acrylic acid. The pyrolysis behavior of the polymeric precursors was studied by use of thermal analysis. The as-obtained product was characterized by powder X-ray diffraction (XRD), transmission electron microscope (TEM), electron diffraction (ED) pattern, scanning electron microscopy (SEM) and electron dispersive X-ray (EDX) analysis. The results revealed that the particle size is in the range of 15–25 nm for Zn-Mn ferrites with good crystallinity. Magnetic properties of the sample at 300 K were measured using a vibrating sample magnetometer, which showed that the sample exhibited characteristics of superparamagnetism.     

Effect of Mg doping on the electrical properties of SnO2 nanoparticles

Sol-gel derived Mg doped tin oxide (Sn_1−xMg_xO₂) nanocrystals were synthesized with x ranging between 0.5 and 7 at. %. Characteristic single phase tetragonal structure of pure and doped samples was obtained and doping saturation was inferred by X-ray diffraction analysis. Structural, morphological and phase informations were obtained by high resolution transmission electron microscope, field emission scanning electron microscope and X-ray photoelectron spectroscopy respectively whereas bonding information was obtained from Fourier transformed infrared spectroscopy. Measurement of different electrical parameters with frequency (200 Hz-10⁵ Hz) has been carried out at room temperature. Ultrahigh dielectric constant and metallic AC conductivity were observed for undoped tin oxide and the profiles reflected highly sensitive changes in the atomic and interfacial polarizability generated by doping concentrations. Relaxation spectra of tangent loss of any sample did not show any loss peak within the frequency range. Both the grain and grain boundary contributions are observed to increase as the doping concentration increased. Results of first principle calculation based on density functional theory indicated effective Fermi level (E_F) suppression due to Mg doping which is responsible for the experimentally observed conductivity variation. AC conductivity was found to depend strongly on the doping concentration and the defect chemistry of the compound. Mg doped SnO₂ may find applications as a low loss dielectric and high density energy storage material.     

高温无铅BaTiO_3-(Bi_(1/2)Na_(1/2))TiO_3正温度系数电阻陶瓷阻抗和介电谱分析

采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%(Bi1/2Na1/2)TiO3(BBNT8)高温无铅正温度系数电阻(positive temperature coe?cient resistivity,PTCR)陶瓷.利用透射电镜观察材料的显微结构,发现陶瓷的显微结构主要包括晶粒和晶界两部分,观察不到明显的壳层结构.进一步利用交流阻抗谱研究了陶瓷的宏观电学性能,发现陶瓷的总电阻是晶粒和晶界两部分的贡献,而晶粒电阻很小,在居里温度以上变化不大,材料的PTCR效应主要是晶界部分的贡献.当温度高于居里温度时,随着温度的升高,晶界介电常数逐渐减小,导致势垒增加,晶界电阻增大,从而产生正温度系数效应.最后,通过测试材料的介电频谱特性,研究计算了陶瓷的室温电阻率.     

Er3+掺杂SiO2复合的Al2O3粉末结构及光致发光特性

采用溶胶-凝胶(sol-gel)工艺制备0.1 mol% Er³⁺掺杂Al₂O₃体系和SiO₂-Al₂O₃复合体系粉末. 实验结果表明：5 mol%的SiO₂复合加入Al₂O₃抑制γ→θ和θ→α相转变. 掺0.1 mol%Er³⁺:Al₂O₃体系粉末，900℃烧结，在1.47—1.63μm波段内光致发光(PL)谱为中心波长1.53 μm、半高宽56 nm的单一宽峰，1000—1200℃烧结，劈裂为多峰PL谱. 掺0.1 mol%Er³⁺:SiO₂-Al₂O₃复合体系粉末，在高达1200℃烧结，仍保持中心波长1.53 μm的单一宽峰PL谱，由于—OH更完全的脱除，PL强度较900℃烧结Al₂O₃体系，SiO₂-Al₂O₃复合体系均提高1个数量级. 关键词： 2-Al₂O₃复合体系')" href="#">SiO₂-Al₂O₃复合体系 掺铒 溶胶-凝胶工艺 光致发光     

Effect of grain boundaries on the conductivity of high-purity ZrO2Y2O3 ceramics

Grain boundary conductivities are determined by complex impedance measurements (1–10⁶ Hz) on high-purity ceramics prepared by the alkoxide synthesis and on less pure ceramics obtained from a commercial powder. The grain size was varied systematically in the region 0.36–55 μm. The grain boundary conductivity is strongly influenced by the grain size, impurities and cooling procedure. The grain boundary conductivity increases linearly with the grain size for small grain sizes (0.3 to 2–4 μm) and is constant for larger grain sizes. The calculated specific conductivity of the grain boundary for pure materials is about 100 times smaller than that of the bulk. The grain boundary thickness was estimated to be 5.4 nm. The activation energy of the grain boundary conductivity is 7 kJ mole^?1 higher than of the bulk.     

不同粒径纳米Y2Ba4CuBiOy 相掺杂对TSIG法单畴YBCO超导块材性能的影响

本文采用顶部籽晶熔渗方法(TSIG), 研究了不同粒径纳米Y₂Ba₄CuBiO_y粒子对单畴YBCO超导块材的生长形貌、微观结构及其磁悬浮力的影响.实验所用纳米Y₂Ba₄CuBiO_y粉体的平均粒度分别为283.0 nm, 170.4 nm以及82.5 nm, 每种粉体在YBCO超导块材中的含量均为2 wt%. 研究结果表明: 在掺杂量为2 wt%的情况下, Y₂Ba₄CuBiO_y粉体的粒度并不影响样品的宏观形貌, 均可制备出单畴YBCO块材; 并且成功地将纳米Y₂Ba₄CuBiO_y粒子引入单畴YBCO块材中, 且使其均匀分布, 但样品中的Y₂Ba₄CuBiO_y粒子均小于其初始粉体的粒度, 分别减小到270 nm, 150 nm和50 nm; 随着Y₂Ba₄CuBiO_y粉体初始粒度的减小, 样品的磁悬浮力逐渐增大, 分别为10 N, 17 N, 22 N. 该结果为进一步研究纳米磁通钉扎中心的引入方法及提高YBCO超导块材的性能有重大意义.