红色荧光粉La2Mo2O9:Eu3+,W6+的制备及发光性能

采用高温固相法合成出La₂Mo₂O₉:Eu³⁺,W⁶⁺系列红色荧光粉,其结构为立方晶系的β- La₂Mo₂O₉。在395 nm光激发下,样品La_1.40Mo₂O₉:0.60Eu³⁺发射出很强的红光,最强发射峰位于616 nm处。适量地掺杂W⁶⁺离子可以提高样品的激发和发射强度,在395 nm光激发下,La_1.40Mo_1.84O₉:0.60Eu³⁺,0.16W⁶⁺荧光粉的Eu³⁺的⁵D₀→⁷F₂跃迁发射强度最大,是样品La_1.40Mo₂O₉:0.60Eu³⁺的1.23倍。最后,将La_1.40Eu_0.60Mo_1.84O₉:0.16W⁶⁺荧光粉与~395 nm发射的InGaN芯片一起制作成红光发光二极管(LED),该LED发射出很强的红光。

Preparation and Luminescence Properties of La2Mo2O9:Eu3+,W6+ Red-emitting Phosphors

Red-emitting phosphors La₂Mo₂O₉:Eu³⁺ and La₂Mo₂O₉:Eu³⁺,W⁶⁺ were synthesized by the conventional solid state method. The structure and luminescent properties of these phosphors were investigated. The results indicate that these phosphors are of single phases with cubic crystal structure. La₂Mo₂O₉:Eu³⁺ and La₂Mo₂O₉:Eu³⁺,W⁶⁺ can be efficiently excited by near ultraviolet light, and the strongest excitation peak is at 395 nm. The emission intensity of La₂Mo₂O₉:Eu³⁺ can be enhanced by introducing W⁶⁺ ions. La_1.40Eu_0.60Mo_1.84O₉:0.16W⁶⁺ exhibites the strongest red emission, which is about 1.23 times than that of La_1.40Mo₂O₉:0.60Eu³⁺. The red light emitting diode (LED) was fabricated by coating InGaN chip (~395 nm emission) with the phosphor La_1.40Eu_0.60Mo_1.84O₉:0.16W⁶⁺, and red bright light could be observed from the LED. Hence La_1.40Eu_0.60Mo_1.84O₉:0.16W⁶⁺ maybe find application on near-UV InGaN-based white LEDs.