Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

AlGaN/GaN high electron mobility transistors(HEMTs) were irradiated by 256 Me V127 I ions with a fluence up to1×1010ions/cm2 at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Both the drain current I d and the gate current I g increased in off-state during irradiation. Post-irradiation measurement results show that the device output, transfer, and gate characteristics changed significantly. The saturation drain current, reverse gate leakage current,and the gate-lag all increased dramatically. By photo emission microscopy, electroluminescence hot spots were found in the gate area. All of the parameters were retested after one day and after one week, and no obvious annealing effect was observed under a temperature of 300 K. Further analysis demonstrates that swift heavy ions produced latent tracks along the ion trajectories through the hetero-junction. Radiation-induced defects in the latent tracks decreased the charges in the two-dimensional electron gas and reduced the carrier mobility, degrading device performance.     

Device topological thermal management of β-Ga_2O_3 Schottky barrier diodes

The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_2 O_3) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_2 O_3, their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga_2 O_3 Schottky barrier diodes(SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga_2 O_3, work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga_2 O_3 plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga_2 O_3 SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga_2 O_3 diode.     

聚合物材料的快重离子辐照效应

简要介绍了快重离子辐照损伤的特点,通过与低电离辐射粒子辐照在聚合物材料中产生的效应的类比论述了快重离子辐照在聚合物材料中产生的效应及其研究现状 ,并结合快重离子辐照效应的应用展望了该领域未来的发展.The irradiation effects in polymers induced by swift heavy ions were reviewed in comparison with that induced by low ionization particles based on the characteristics of swift heavy ion irradiations. It is shown that bond breaking and cross linking, gas releasing, amorphization and carbonization of polymers depend strongly on the electronic energy loss. Besides special effects such as alkynes production, can be induced under swift heavy ion irradiation. The perspectives...     

Characterization of vertical Au/β-Ga_2O_3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

High-resistivity β-Ga_2O_3 thin films were grown on Si-doped n-type conductive β-Ga_2O_3 single crystals by molecular beam epitaxy(MBE).Vertical-type Schottky diodes were fabricated,and the electrical properties of the Schottky diodes were studied in this letter.The ideality factor and the series resistance of the Schottky diodes were estimated to be about1.4 and 4.6×10~6 Ω.The ionized donor concentration and the spreading voltage in the Schottky diodes region are about4×10~(18)cm~(-3) and 7.6 V,respectively.The ultra-violet(UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination.A photoresponsivity of 1.8 A/W and an external quantum efficiency of8.7 ×10~2%were observed at forward bias voltage of 3.8 V,the proper driving voltage of read-out integrated circuit for UV camera.The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga_2O_3 thin films and the n-type conductive β-Ga_2O_3 single-crystal substrate.     

Neutron irradiation effects on A1GaN//GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors(HEMTs) were exposed to 1 MeV neutron irradiation at a neutron fluence of 1 × 10 15 cm 2.The dc characteristics of the devices,such as the drain saturation current and the maximum transconductance,decreased after neutron irradiation.The gate leakage currents increased obviously after neutron irradiation.However,the rf characteristics,such as the cut-off frequency and the maximum frequency,were hardly affected by neutron irradiation.The AlGaN/GaN heterojunctions have been employed for the better understanding of the degradation mechanism.It is shown in the Hall measurements and capacitance-voltage tests that the mobility and concentration of two-dimensional electron gas(2DEG) decreased after neutron irradiation.There was no evidence of the full-width at half-maximum of X-ray diffraction(XRD) rocking curve changing after irradiation,so the dislocation was not influenced by neutron irradiation.It is concluded that the point defects induced in AlGaN and GaN by neutron irradiation are the dominant mechanisms responsible for performance degradations of AlGaN/GaN HEMT devices.     

Influence of annealing treatment on the luminescent properties of Ta:β-Ga_2O_3 single crystal

Ta~(5+)doped β-Ga_2O_3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irradiation spectra, and PL decay profiles of the samples were measured at room temperature.The relevant results show that the optical transmittance of the samples annealed in the air or nitrogen gas was improved.By drawing the(ahv)~2–hv graph,it can be seen that the band gap decreased after being annealed in the air, but increased in nitrogen gas.The PL spectra and x-ray irradiation spectra show that the luminescent intensity of the sample annealed in the air increased substantially,while decreased for the sample annealed in nitrogen.The PL decay time of the Ta:β-Ga_2O_3 annealed in the air increased significantly compared with that of the Ta:β-Ga_2O_3 sample without annealing, but the tendency after annealing in nitrogen gas was opposite.     

Effects of swift argon-ion irradiation on the proton-exchanged LiNbO3 crystal

A proton-exchanged LiNbO3 crystal was subjected to 70-MeV argon-ion irradiation.The lattice damage was investigated by the Rutherford backscattering and channeling technique.It was found that the lattice disorder induced by the proton exchange process was partially recovered and the proton-exchanged layer was broadened.It indicated that the lithium ions underneath the initial proton-exchanged layer migrated to the surface during the swift argon-ion irradiation and supplemented the lack of lithium ions in the initial proton-exchanged layer.This effect was ascribed to the great electronic energy deposition and relaxation.The swift argon-ion irradiation induced an increase in extraordinary refractive index and formed another waveguide structure beneath the proton-exchanged waveguide.     

Effects of swift argon-ion irradiation on the proton-exchanged LiNbO₃ crystal

A proton-exchanged LiNbO3 crystal was subjected to 70-MeV argon-ion irradiation.The lattice damage was investigated by the Rutherford backscattering and channeling technique.It was found that the lattice disorder induced by the proton exchange process was partially recovered and the proton-exchanged layer was broadened.It indicated that the lithium ions underneath the initial proton-exchanged layer migrated to the surface during the swift argon-ion irradiation and supplemented the lack of lithium ions in the initial proton-exchanged layer.This effect was ascribed to the great electronic energy deposition and relaxation.The swift argon-ion irradiation induced an increase in extraordinary refractive index and formed another waveguide structure beneath the proton-exchanged waveguide.     

快重离子辐照效应的穆斯堡尔谱学研究

概述了利用穆斯堡尔效应开展的固体材料快重离子辐照效应研究的部分结果 ,并对建立在兰州重离子加速器 (HIRFL)上的在束穆斯堡尔谱学研究装置及其应用作了简要的介绍.Mssbauer spectroscopy study of irradiation effects induced by swift heavy ions in solid materials were briefly presented.Amorphization phenomenon of yttrium iron garnet irradiated by 1 GeV Ar ions has been investigated. For the first time, the nearly complete amorphous state was observed. Stainless steel 316L samples were irradiated with 54 MeV C ions and phase transformation of the samples was observed. HT 9 ferrite steel was irradiated with 510 MeV C ions. Its phase...     

Evidence of New Structure Formation in C-doped SiO2 after 4.57 MeV／u Pb Ion Irradiation

Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations induced     

离子辐照单晶Si损伤效应的研究

回顾了低能离子注入单晶Si经由核弹性碰撞引起的损伤特征及其常规的研究方法,介绍了快重离子辐照单晶Si经由电子能损引起的损伤特点及研究现状,并对该领域的研究作了展望. The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy ...     

Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep-submicron MOSFETs.Upon the heavy ion track through the device,it can lead to displacement damage,including the vacancies and the interstitials.As the featured size of device scales down,the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics.The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage,subthreshold swing,saturation drain current,transconductance,etc.The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation.The samples are also irradiated by Co-60 gamma ray for comparison with the heavy ion irradiation results.Corresponding explanations and analysis are discussed.     

Electronic structures and optical properties of Si-and Sn-doped β-Ga_2O_3: A GGA+U study

The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-Ga_2O_3 are in good agreement with experimental results. Si-and Sn-doped β-Ga_2O_3 tend to form under O-poor conditions, and the formation energy of Si-doped β-Ga_2O_3 is larger than that of Sn-doped β-Ga_2O_3 because of the large bond length variation between Ga–O and Si–O. Si-and Sn-doped β-Ga_2O_3 have wider optical gaps than β-Ga_2O_3, due to the Burstein–Moss effect and the bandgap renormalization effect. Si-doped β-Ga_2O_3 shows better electron conductivity and a higher optical absorption edge than Sn-doped β-Ga_2O_3, so Si is more suitable as a dopant of n-type β-Ga_2O_3, which can be applied in deep-UV photoelectric devices.     

Synthesis and characterization of β-Ga_2O_3@GaN nanowires

In this work, we prepared the β-Ga_2O_3@GaN nanowires(NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to β-Ga_2O_3 was confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effect of the oxidation temperature and time on the oxidation degree of GaN NWs was investigated systematically. The oxidation rate of GaN NWs was estimated at different temperatures.     

Equivalent properties of single event burnout induced by different sources

The experimental results of single event burnout induced by heavy ions and 252Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by 252Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the ＂turn-off＂ state is more susceptible to single event burnout than it is in the ＂turn-on＂ state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and ^252Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout.     

TILLING技术的最新进展及其在辐射诱变育种中的应用前景

定向诱导基因组局部突变技术(Targeting Induced Local Lesions IN Genomes, 简称TILLINC)是一种全新的、高通量和低成本反向遗传学研究方法。近年来, 随着突变筛选技术的革新, TILLING技术平台日趋多元化, 使得TILLING技术的操作更为简单﹑快速, 并广泛应用于作物育种研究领域。简要介绍了TILLING技术平台的最新发展动态, 并初步探讨了将辐射诱变处理与TILLING高通量筛选相结合在诱变育种中的应用前景。To investigate the M1 biological effects of heavy ions irradiation on Lycopersicon esculentum Mill., its seeds were irradiated by 12C6+heavy ions (80 MeV/u) with the dosages of 30, 60, 90, 120 and 160 Gy respectively . The results showed that with doses increased gradually, germination rate and seedling rate of Lycopersicon esculentum Mill. were decreased, and the latter was lower than the former, mainly due to the inhibition of root growth. The irradiation increased the content of MDA and proline evidently, showing irradiation could damage biomembrane, and also decreased the activities of POD and SOD with distinct inhibition pattern. However, the low dose and high dose irradiation promoted APX activity, illustrating APX was induced to protect irradiation injury. In brief, exposure to 12C6+ heavy ions had obvious injury effects on the seeds of Lycopersicon esculentum Mill.. Heavy ions irradiation damaged biomembrane, inhibited activities of enzymes, and finally inhibited the growth of the first generation of these seeds.     

快重离子在固体材料中的强电子激发效应

简要介绍了快重离子在固体材料中强电子激发效应的基本特点、研究现状和在HIRFL上获得的部分实验结果,并对今后的研究工作进行了展望。In this paper the outline of intense electronic excitation effects in solid materials induced by swift heavy ions and international research status were briefly reviewed. Few examples of experimental results obtained on HIRFL were presented. And also the developing tendency in the field was looked into the future.     

Formation of Infrared Femtosecond Laser Induced Colour Centres in Tb^3＋－Doped and Tb^3＋／Ce^3＋－Codoped Heavy Germanate Glasses and Tb3＋／Ce3＋－Codoped Heavy Germanate Glasses ＊

The formation of infrared femtosecond laser induced colour centres was observed in Tb^3 -doped and Tb^3 /Ce^3 -codoped heavy germanate glasses. A rectangular scan was made by focusing the laser beam inside the glasssamples. A three-dimensional yellowish block was created from the path and it corresponded to the appearanceof broad absorption bands in the absorption spectra. The irradiation induced absorption coefficient μ(λ) wasused to characterize the distribution of radiation induced colour centres in the samples, whose peak was locatedat 380 nm and extended to the longer wavelength. Ce^3 ions were found not only to inhibit the formation ofcolour centres, but also to enhance the recovery.     

Preparation and NO_2-gas sensing property of individual β-Ga_2O_3 nanobelt

Monoclinic gallium oxide (β-Ga_2O_3) nanobelts are synthesized from gallium and oxygen by thermal evaporation in an argon atmosphere and their NO_2 sensing properties are studied at room temperature.Electron microscopy studies show that the nanobelts have breadths ranging from 30 to 50 nm and lengths up to tens of micrometers.Both the x-ray diffraction (XRD) and the selected are electron diffraction (SAED) examinations indicate that β-Ga_2O_3 nanobelts have grown into single crystals.Room temperature NO_2 sensing tests show that the current of individual β-Ga_2O_3 nanobelt decreases quickly,and then gently when the NO_2 concentration increases from low to high.It is caused by the NO_2 molecule chemisorption and desorption processes in the surface of β-Ga_2O_3 nanobelt.     

Chemical Etching of High-energy Xe Ion Irradiated PET

Heavy ion irradiated polymers can be chemically etched to form track membrane with pores in the micro and sub-micro ranges. The basic proccsses of track membrane production are irradiation of thin polymer films through heavy ions followcd by chemical ctching. The track mcmbrane parameters such as pore size and shape, pore density, aspect ratio etc. depend on many factors such as material properties, irradiation conditions (ions, ion energy and fluence etc.) and etching conditions (etchant concentration, etching temperature etc.), as well as the treatmcnts of the material before or during chemical etching. In this work the Xe-ion irradiated PET fihns were chcmically etchcd and the pore growth processes were followed from which the etching parameters were evaluated and analyzed with respect to etchant concentration and applied voltages.