Optical Waveguide Formed in Yb：KLu（WO4）2 Crystal by 6.0 MeV O^＋ Implantation

A planar optical waveguide is formed in monoclinic double rare-earth-tungstate laser crystal Yb：KLu（WO4）2 by 6.0 Me V oxygen ion implantation with a dose of 2 × 10^16 ions/cm^2 at room temperature. Subsequently, annealing at 300℃ for an hour in air is performed on the sample to decrease colour centres to improve the thermal stability of the waveguide. The refractive index profiles of the waveguide are reconstructed by an effective refractive index method. Dark modes of the waveguide are observed at wavelengths of 633 nm and 1539 nm. TRIM＇98 is used to simulate the damage profile caused by the implantation process. It is found that the refractive index change may be mainly due to the damage induced by the nuclear energy loss.     

水平极化光在单轴吸收晶体中的传播

根据光在各向同性吸收介质中传播的分析方法,引入了波法线矢量传播常量,讨论了水平极化光在单轴吸收晶体中的传播规律,得到了波法线折射率、光线折射率、吸收系数等描述吸收晶体性质和光传播性质的物理量的表达式,推导出透明晶体的相应公式.数值计算表明,由该法得到的晶体表面的反射和透射系数与用复折射率表示法得到的结论一致.     

Optical Waveguide Formed in RbTiOPO4 Crystal by 6.0 MeV O^3＋ Implantation

A planar optical waveguide was formed in RbTiOP04 crystal by 6.0-MeV oxygen ion implantation with the dose of 2 × 10^15 ions/cm2 at room temperature. Annealing at 200℃ for 30min in air is performed to improve the thermal stability of the waveguide. The dark modes of the waveguide are measured at wavelengths 633 and 1539 nm, respectively. The refractive index profiles in the guiding layer are reconstructed by using the reflectivity calculation method. TRIM＇98 code was carried out to simulate the damage profiles caused by the implantation process to obtain a better understanding of the waveguide formation.     

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor(UMOSFET) integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.     

Effects of swift argon-ion irradiation on the proton-exchanged LiNbO₃ crystal

A proton-exchanged LiNbO3 crystal was subjected to 70-MeV argon-ion irradiation.The lattice damage was investigated by the Rutherford backscattering and channeling technique.It was found that the lattice disorder induced by the proton exchange process was partially recovered and the proton-exchanged layer was broadened.It indicated that the lithium ions underneath the initial proton-exchanged layer migrated to the surface during the swift argon-ion irradiation and supplemented the lack of lithium ions in the initial proton-exchanged layer.This effect was ascribed to the great electronic energy deposition and relaxation.The swift argon-ion irradiation induced an increase in extraordinary refractive index and formed another waveguide structure beneath the proton-exchanged waveguide.     

Effects of swift argon-ion irradiation on the proton-exchanged LiNbO3 crystal

A proton-exchanged LiNbO3 crystal was subjected to 70-MeV argon-ion irradiation.The lattice damage was investigated by the Rutherford backscattering and channeling technique.It was found that the lattice disorder induced by the proton exchange process was partially recovered and the proton-exchanged layer was broadened.It indicated that the lithium ions underneath the initial proton-exchanged layer migrated to the surface during the swift argon-ion irradiation and supplemented the lack of lithium ions in the initial proton-exchanged layer.This effect was ascribed to the great electronic energy deposition and relaxation.The swift argon-ion irradiation induced an increase in extraordinary refractive index and formed another waveguide structure beneath the proton-exchanged waveguide.     

Investigation of the lateral spread of erbium ions implanted in silicon crystal

The erbium ions at energy of 400 keV and dose of 5×10 15 ions/cm 2 were implanted into silicon single crystals at room temperature at the angles of 0,45 and 60.The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique.The results show that the measured values were in good agreement with those obtained from the prediction of TRIM’98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes.     

Analysis and Determination of Refractive Index Profiles of O^2＋ Ion-Implanted LiNbO3 Planar Waveguide Using Etching and Ellipsometry Techniques

The refractive index profiles of 3 MeV O^2＋ ion-implanted planar waveguides in lithium niobate are reconstructed based on etching and ellipsometry techniques. SRIM2003 code is used to simulate the damage distribution in waveguide. It is demonstrated that the index profile of this kind of waveguide, extending to several micrometres in depth, can be determined by etching in combination with following ellipsometric measurements. A good agreement is found between the simulated damage distributions in waveguide and the index profiles based on experimental data, and the width of refractive index barrier is wider than the result of SRIM2003.