氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO2层,在载玻片衬底上制备出了SnO2/Ag/SnO2多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10-2 Ω-1;此时,薄膜的电阻率为9.8×10-5Ω·cm,方电阻为9.68Ω/sq,在400～800 nm可见光区的平均光学透射率达85％;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO2层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85％以上,电阻率为1.22×10-4Ωcm,方电阻为12.05Ω/sq.     

CdTe太阳电池前电极SnO2:F/SnO2复合薄膜性能分析

减薄CdS窗口层是提高CdS/CdTe太阳电池转换效率的有效途径之一,减薄窗口层会对器件造成不利的影响,因此在减薄了的窗口层与前电极之间引入过渡层非常必要.利用反应磁控溅射法在前电极SnO₂:F薄膜衬底上制备未掺杂的SnO₂薄膜形成过渡层,并将其在N₂/O₂=4 ∶1,550 ℃环境进行了30 min热处理,利用原子力显微镜、X射线衍射仪、紫外分光光度计对复合薄膜热处理前后的形貌、结构、光学性能进行了表征,同时分析了复     

蓝宝石衬底SnO2:Sb薄膜的制备及结构和光致发光性质

用射频磁控溅射法在蓝宝石(0001)衬底上制备出锑掺杂的氧化锡(SnO₂:Sb)薄膜.对制备薄膜的结构和发光性质进行了研究.制备样品为多晶薄膜，具有纯SnO₂的四方金红石结构.室温条件下对样品进行光致发光测量，在334 nm附近观测到紫外发射峰，并对SnO₂:Sb的光致发光机制进行了研究.     

In2O3 透明薄膜晶体管的制备及其电学性能的研究

采用磁控溅射方法在玻璃衬底上生长了In₂O₃晶体薄膜.该薄膜具有(111)晶面择优取向,晶粒尺寸达到33 nm.利用光刻工艺制作了以In₂O₃晶体薄膜为沟道层的底栅式薄膜晶体管.In₂O₃薄膜晶体管具有良好的栅压调制特性,场效应迁移率达到6.3 cm²/(V·s),开关电流比为3×10³,阈值电压为-0.9 V.结果表明,In相似文献   

非晶SnO2：(Cu，In)薄膜的荧光特性及带尾态

用反应蒸发法在玻璃等衬底上制备出铜和铟掺杂的氧化锡SnO₂：(Cu,In)薄膜.对制备薄膜的发光性质做了研究,制备样品为非晶态,具无定形结构.测量了薄膜在220—1100nm范围的透过率,得到的带隙宽度E^opt_g=4.645eV.室温条件下对样品进行光致发光测量,得到了显著的紫外(276—550nm)蓝绿光连续谱,通过发光谱的研究给出了这种材料的隙态分布.     

使用金属掺杂SnO2(110)作为表面催化剂的电催化CO2还原反应：通过调控Sn:O原子比例来控制产物

电催化CO₂还原反应可以产生HCOOH和CO,目前该反应是将可再生电力转化为化学能存储在燃料中的最有前景的方法之一. SnO₂作为将CO₂转换为HCOOH和CO的良好催化剂,其反应发生的晶面可以是不同的. 其中(110)面的SnO₂非常稳定,易于合成. 通过改变SnO₂(110)的Sn:O原子比例,得到了两种典型的SnO₂薄膜：完全氧化型(符合化学计量)和部分还原型. 本文研究了不同金属(Fe、Co、Ni、Cu、Ru、Rh、Pd、Ag、Os、Ir、Pt和Au)掺杂的SnO₂(110),发现在CO₂还原反应中这些材料的催化活性和选择性是不同的. 所有这些变化都可以通过调控(110)表面中Sn:O原子的比例来控制. 结果表明,化学计量型和部分还原型Cu/Ag掺杂的SnO₂(110)对CO₂还原反应具有不同的选择性. 具体而言,化学计量型的Cu/Ag掺杂的SnO₂(110)倾向于产生CO(g),而部分还原型的表面倾向于产生HCOOH(g). 此外,本文还考虑了CO₂还原的竞争析氢反应. 其中Ru、Rh、Pd、Os、Ir和Pt掺杂的SnO₂(110)催化剂对析氢反应具有较高的活性,其他催化剂对CO₂还原反应具有良好的催化作用.     

新型电子俘获型光存储材料Sr2SnO4:Sb3+的发光性能研究

采用高温固相法在1300℃的温度获得了一种新型电子俘获型光存储材料 Sr₂SnO₄:Sb³⁺. 结果表明: 208 nm (Sb³⁺ 的¹S₀→¹P₁)和265 nm (¹S₀→³P₁)的紫外光是Sr₂SnO₄:Sb³⁺ 的最有效信息写入光源; 其发射是覆盖400---700 nm的宽带(³P_0,1→^XXS₀), 肉眼可看到淡黄色白光, 色坐标为(0.341, 0.395). 热释光谱研究结果表明: Sr₂SnO₄:Sb³⁺ 有分别位于39℃, 124℃, 193℃和310℃的四个热释峰. 其中, 39~℃的热释峰强度很低, 因而Sr₂SnO₄:Sb³⁺ 只具有不到140 s的微弱余辉. 而310℃的高温热释峰在空置1天后, 仍能保持约45.6%的初始强度, 并对980 nm的红外光有很好的红外上转换光激励响应. 因此, Sr₂SnO₄:Sb³⁺ 是一种具有一定的信息存储应用潜力的新型光存储发光材料.     

Cl/HN3/I2全气相化学激光体系的化学动力学模拟计算

 对Cl/HN₃/I₂产生NCl(a)/I激光的过程进行了化学动力学计算，主要考察了Cl,HN₃和I₂的初始粒子数密度及其配比对小信号增益系数的影响。结果发现,当温度为400K, 初始Cl粒子数密度为1×10¹⁵，1×10¹⁶和1×10¹⁷cm^-3时,小信号增益系数分别达到1.6×10^-4,1.1×10^-3和1.1×10^-2cm^-1，获得最佳小信号增益系数的HN₃和I₂的初始粒子数密度分别为初始Cl粒子数密度的1～2倍和2%～4%。同时，对Cl，HN₃和I₂配比对小信号增益系数和增益持续时间的影响进行了讨论。     

射频磁控溅射法制备SnO2:Sb薄膜的结构和光致发光性质研究

采用射频磁控溅射法在玻璃衬底上制备出锑掺杂的氧化锡（SnO2₂:Sb）薄膜.制 备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄，晶粒生长的择优取向为［110］.室温下光致发光测量结果表明，在392nm附近存在强的紫外-紫光发射.研究了不同氧分压对薄膜结构及发光性质的影响，并对SnO2₂:Sb的光致发光机制进行了探索性研究.     

Zn掺杂β-Ga2O3薄膜的制备和特性研究

β-Ga₂O₃是一种宽带隙半导体材料,能带宽度E_g≈5.0eV,在光学和光电子学领域有广泛的应用。用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜,用紫外 可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响。退火后的β-Ga₂O₃薄膜为多晶结构,与本征β-Ga₂O₃薄膜相比,Zn掺杂β-Ga₂O₃薄膜的β-Ga₂O₃(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°。退火后的Zn掺杂β-Ga₂O₃薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强。表明退火后Zn掺杂β-Ga₂O₃薄膜中的Zn原子被激活充当受主。     

Substrate effects on the oxygen gas sensing properties of SnO2/TiO2 thin films

In this study, SnO₂/TiO₂ thin films are fabricated on SiO₂/Si and Corning glass 1737 substrates using a R.F. magnetron sputtering process. The gas sensing properties of these films under an oxygen atmosphere with and without UV irradiation are carefully examined. The surface structure, morphology, optical transmission characteristics, and chemical compositions of the films are analyzed by atomic force microscopy, scanning electron microscopy and PL spectrometry. It is found that the oxygen sensitivity of the films deposited on Corning glass 1737 substrates is significantly lower than that of the films grown on SiO₂/Si substrates. Therefore, the results suggest that SiO₂/Si is an appropriate substrate material for oxygen gas sensors fabricated using thin SnO₂/TiO₂ films.     

Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO2 thin films

Tin oxide (SnO₂) thin films were deposited by radio frequency (RF) magnetron sputtering on clean corning glass substrates. These films were then annealed for 15 min at various temperatures in the range of 100-500°C. The films were investigated by studying their structural and electrical properties. X-ray diffraction (XRD) results suggested that the deposited SnO₂ films were formed by nanoparticles with average particle size in the range of 23-28 nm. XRD patterns of annealed films showed the formation of small amount of SnO phase in the matrix of SnO₂. The initial surface RMS roughness measured with atomic force microscopy (AFM) was 25.76 nm which reduces to 17.72 nm with annealing. Electrical resistivity was measured as a function of annealing temperature and found to lie between 1.25 and 1.38 mΩ cm. RMS roughness and resistivity show almost opposite trend with annealing.     

Fabrication of textured SnO2:F thin films by spray pyrolysis

Transparent conductive SnO₂:F thin films with textured surfaces were fabricated on soda-lime-silica glass substrates by spray pyrolysis. Structure, morphology, optical and electrical properties of the films were investigated. Results show that the film structure, morphology, haze, transmittance and sheet resistance are dependent on the substrate temperature and film thickness. An optimal 810 nm-thick SnO₂:F film with textured surface deposited at 520 °C exhibits polycrystalline rutile tetragonal structure with a (2 0 0) orientation. The sheet resistance, average transmittance in visible region, and haze of this film were 8 Ω/□, 80.04% and 11.07%, respectively, which are suitable for the electrode used in the hydrogenated amorphous silicon solar cells.     

SnO2/TiO2 mixed oxide particles synthesized in doped premixed H2/O2/Ar flames

SnO₂/TiO₂ mixed oxides with primary particle size ranging between 5 nm d_p 12 nm were synthesized by doping a H₂/O₂/Ar flame with Sn(CH₃)₄ and Ti(OC₃H₇)₄ co-currently. The effects of “flow coordinate,” concentration and flame configurations were investigated with respect to particle size and morphology of the generated mixed oxides. In situ characterization of the mixed oxides was performed using the particle mass spectrometer (PMS), while XRD, TEM, BET and UV–Vis were performed ex situ. Results obtained showed that primary particle size of mixed oxides can be controlled by varying experimental parameters. The mixed oxides have interesting properties compared to those of the pure oxides of TiO₂ and SnO₂, which were also synthesized in flames earlier. Band gap tuning opportunities are possible using mixed oxides.     

Gd-doped SnO2 nanoparticles: Structure and magnetism

Gd-doped SnO₂ nanoparticles were chemically prepared doping 0-12.5% Gd into SnO₂ and calcined at 600 °C. X-ray diffraction and Fourier transformed infrared spectroscopy measurements show the formation of single phase of Sn_1−xGd_xO₂ up to x=0.0625 while at x=0.125, an additional secondary phase of tetragonal GdO₂ (not cubic Gd₂O₃) is detected. The transmission electron microscopy studies show that the individual particles are single crystalline with an average size in the range of 10-12 nm. Magnetization measurements show the absence of ferromagnetic and antiferromagnetic ordering in all samples; however surface spin effects and enhanced Gd-O-Gd interactions are proposed to account for the observed magnetic properties of the samples.     

Synthesis and nonlinear optical characterization of SnO2 quantum dots

The present paper demonstrates the preparation and characterization of SnO₂ semiconductor quantum dots. Extremely small ∼1.1 and ∼1.4 nm SnO₂ samples were prepared by microwave assisted technique with a frequency of 2450 MHz. Based on XRD analysis, the phase, crystal structure and purity of the SnO₂ samples are determined. UV-vis measurements showed that, for the both size of SnO₂ samples, excitonic peaks are obtained at ∼238 and ∼245 nm corresponding to ∼1.1 nm (sample 1) and ∼1.4 nm (sample 2) sizes, respectively. STM analysis showed that, the quantum dots are spherical shaped and highly monodispersed. At first, the linear absorption coefficients for two different sizes of SnO₂ quantum dots were measured by employing a CW He-Ne laser at 632.8 nm and were obtained about 1.385 and 4.175 cm⁻¹, respectively. Furthermore, the nonlinear refractive index, n₂, and nonlinear absorption coefficient, β, were measured using close and open aperture Z-scan respectively using the same laser. As quantum dots have strong absorption coefficient to obtain purely effective n₂, we divided the closed aperture transmittance by the corresponding open aperture in the same incident beam intensity. The nonlinear refraction indices of these quantum dots were measured in order of 10⁻⁷ (cm²/W) with negative sign and the nonlinear absorption coefficients were obtained for both in order of 10⁻³ (cm/W) with positive sign.     

Photoluminescence and persistent luminescence properties of non-doped and Ti4+-doped Mg2SnO4 phosphors

Mg₂SnO₄ exhibits green photoluminescence and persistent luminescence, which originate from oxygen vacancies. When Ti⁴⁺ ions were doped, an interesting Mg₂SnO₄:Ti⁴⁺ phosphor with bluish white photoluminescence under ultraviolet irradiation and with green persistent luminescence was first obtained. Our investigation reveals that two emission centres exist in Mg₂SnO₄:Ti⁴⁺. The centres responsible for the green emission are considered to be the F centres (oxygen vacancies) and the blue centres are the TiO₆ complex. Trap clusters in the band gap with different depths, such as [Sn_Mg^‥—O_i^″], [Sn_Mg^‥—V_O^·], [Sn_Mg^‥—V_O^×] and Mg_Sn^″, correspond to the components at 85 ℃, 146 ℃ and 213 ℃ of the thermoluminescence curve.     

Synthesis and field-emission of aligned SnO2 nanotubes arrays

Aligned tin dioxide (SnO₂) nanotubes have been synthesized by high-frequency inductive heating. Nanotubes with high yield were grown on silicon substrates in less than 5 min, using SnO₂ and graphite as the source powder. Scanning electron microscopy and transmission electron microscopy showed nanotube with diameters from 50 to 100 nm and lengths up to tens of mircrometers. The SnO₂ nanotubes synthesized under the optimum condition have better field-emission characteristics. The turn-on field needed to produce a current density of 10 μA/cm² is found to be 1.64 V/μm. The samples show good field-emission properties with a fairly stable emission current. This type of SnO₂ nanotubes can be applied as field emitters in displays as well as vacuum electric devices.