溅射功率对Mo薄膜微结构和性能的影响

 实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。     

负偏压对磁控溅射Ti膜沉积速率和表面形貌的影响

 采用直流磁控溅射加负偏压的方法制备了Ti膜,研究了不同偏压条件对Ti膜沉积速率、密度、生长方式及表面形貌的影响。随着偏压逐渐增大,Ti膜沉积速率分三个阶段变化:0~ -40 V之间沉积速率基本不变; -40~ -80 V之间沉积速率迅速降低;超过-80 V后沉积速率随偏压的下降速度又放缓。Ti膜密度随偏压增加而增大,负偏压为-119.1 V时开始饱和并趋于块体Ti材密度。加负偏压能够抑制Ti膜的柱状生长方式;偏压可以改善Ti膜的表面形貌,对于40 W和100 W的溅射功率,负偏压分别在-100 V和-80 V左右时制备出表面光洁性能较佳的Ti膜。     

射频溅射功率对AZO薄膜结构及光电特性和热稳定性的影响

采用射频磁控溅射法,在玻璃基片上制备了ZnO:Al(AZO)透明导电薄膜。用X射线衍射(XRD)仪、紫外-可见分光光度计、方块电阻测试仪和台阶仪对不同溅射功率下Al掺杂ZnO薄膜的结晶、光学、电学性能、沉积速率以及热稳定性进行了研究。研究结果表明:不同溅射功率下沉积的AZO薄膜具有六角纤锌矿结构,均呈c轴择优取向;(002)衍射峰强和薄膜的结晶度随溅射功率的提高逐渐增强;随溅射功率的提高,AZO薄膜的透射率有所下降,但在可见光(380～780nm)范围内平均透射率仍80%;薄膜的方块电阻随溅射功率的增加逐渐减小;功率为160～200W时,薄膜的热稳定性最好,升温前后方块电阻变化率为13%。     

磁控溅射制备氧化硅薄膜生长速率

氧化硅薄膜是半导体工业中常见的薄膜材料,通常采用化学气相沉积方法制备。但是这种制备方法存在缺欠。采用磁控溅射的方法首先在石英衬底上制备了氧化硅薄膜。研究了射频功率、氧气含量和溅射压强对氧化硅薄膜沉积速率的影响。发现沉积速率随着射频功率的增加而增加;随着氧气含量的增加,先减小后增大;当溅射压强在0.4~0.8 Pa之间变化时,沉积速率变化很小,当溅射压强超过0.8 Pa时沉积速率迅速下降。讨论了不同生长条件下造成氧化硅薄膜生长速率变化的原因。     

膜厚对直流磁控溅射Nb薄膜微结构的影响

 采用直流磁控溅射方法制备膜厚为50, 100, 200, 400, 600 nm的Nb薄膜,对薄膜的沉积速率、表面形貌、晶体结构进行了研究,并对其应力和择优取向进行了详细的分析。原子力显微镜图像显示Nb膜表面光滑、致密,均方根粗糙度达到0.1 nm量级。X射线小角衍射给出了薄膜的晶格结构、晶粒尺寸和应力情况。分析表明薄膜为多晶体心立方结构(bcc),在(110)晶面方向存在明显的择优取向,且随着薄膜厚度增大而增强。Nb膜应力先随薄膜厚度增大而增大,在200 nm时达到最大值(为1.015 1 GPa),后随薄膜厚度的增大有所减小。     

常温溅射DLC膜的工艺研究

常温下,采用磁控溅射技术成功地在Ge基底上制备了类金刚石膜,并研究了溅射功率、碳氢气体与氩气流量比、溅射频率、基底负偏压等工艺参数对类金刚石膜沉积速率的影响和薄膜的光学性能。结果表明：溅射功率、溅射频率、碳氢气体与氩气流量比对沉积速率有显著的影响。沉积速率随着溅射功率的增大而增大,随着溅射频率的减小而增大。随着碳氢气体与氩气流量比、基底负偏压的增大沉积速率先增大后降低。制备的类金刚石膜具有较宽的光谱透明区,Ge基底单面沉积的类金刚石膜其峰值透过率最高达到63．99％。     

场发射显示Ag膜电极的制备及其电性能

场发射显示(FED)被认为是CRT的平板化,受到人们关注。作者采用直流磁控溅射法,在Al₂O₃过渡层上制备面心立方结构的Ag多晶薄膜。通过XRD、SEM、AFM测试分析发现,溅射功率分为两个区域,在溅射功率不高于2.8 kW时,沉积速率随着功率线性增大,得到Ag膜晶粒尺寸均一,薄膜电阻率逐步降低;溅射功率高于2.8 kW后,沉积速率没有显著增大,出现较多的大晶粒,电阻率升高,并且从理论上给出了解释。综合来看,溅射功率在2.8 kW所制备的Ag膜微观结构质量达到最佳,电阻率也达到最小值。     

溅射功率对金属锰膜光学性质的影响

采用磁控溅射方法在Si（111）基片上制备金属锰膜,用椭圆偏振光谱在入射光子能量为2.0–4.0 eV范围内研究了溅射功率对薄膜光学性质的影响. 利用德鲁得-洛伦兹色散模型对椭偏数据进行拟合,结果表明在测量范围内随溅射功率增加薄膜的折射率减小;消光系数随入射光子能量增加先增加后减小,在3.0 eV附近处出现极大值,并且极大值所处的位置随溅射功率增加而向低能方向移动,这主要与溅射沉积的锰薄膜的质量有关,且随溅射功率的增加薄膜的消光系数逐渐趋近于金属锰的数值. 研究结果还表明溅射功率的增加减少了薄膜中的空隙,有利于薄膜的生长. 关键词： 磁控溅射 金属锰膜 椭圆偏振光谱 德鲁得-洛伦兹色散模型     

溅射工艺参数对硅薄膜微结构影响的Raman分析

为了解决碳化硅难以进行光学加工的问题,该文采用射频磁控溅射方法,在碳化硅反射镜坯体上沉积与碳化硅具有相近热膨胀系数且易于进行光学加工的硅薄膜。利用拉曼光谱(Raman)对衬底温度、射频功率、衬底偏压等溅射工艺条件对硅膜微结构的影响进行了分析。研究发现：随着衬底温度的升高,薄膜的晶化率先增大后减小;衬底偏压的增加不利于薄膜有序结构的形成;射频功率对薄膜微结构的影响比较复杂,随着功率的升高,薄膜晶粒尺寸减小,晶化率降低,当射频功率进一步升高时,薄膜中有序团簇尺寸和晶化率逐渐升高。但过高的射频功率反而不利于薄膜的晶化。     

直流磁控溅射制备氧化钒薄膜

讨论了在低温下以高纯金属钒作靶材,用直流磁控溅射的方法制备出了氧化钒薄膜。通过设计正交试验,分析了氩气和氧气的流量比,溅射功率,工作压强,基底温度对氧化钒薄膜沉积速率和电阻温度系数TCR的影响,采用RTP-500型快速热处理机对氧化钒薄膜样品进行了退火热处理,实验结果表明:当Ar与O2的比例为100:4,溅射功率为120W,工作压强为2Pa时,所获得薄膜TCR较大,都在-2%/K附近,最高的可达-3.6%/K。     

Optical and mechanical properties of AlF3 films produced by pulse magnetron sputtering of Al targets with CF4/O2 gas

In this study, AlF₃ thin films were deposited by pulse magnetron sputtering of Al targets with different ratios of CF₄/O₂ gas and at different sputtering powers. The optical and mechanical properties of the AlF₃ thin films were analyzed. The transmittance spectra showed no obvious negative inhomogeneous refractive indices. Denser films with a low optical absorption were obtained when high sputtering powers were used (larger than 30 W). The lowest extinction coefficient (7.3 × 10⁻⁴ at 193 nm) of the films can be reached with 12 sccm O₂ flow rate and at 160W sputtering power. All of the residual stresses were compressive and their trends were consistent with the refractive indices. The lowest compressive stress (0.068 GPa) was obtained when the AlF₃ films were prepared at 160W sputtering power.     

Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering

Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar-N₂ gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80 W to 130 W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80 W and 130 W are close to the stoichiometry of BC₃N. The sample deposited at 110 W is close to the stoichiometry of BCN. The samples deposited at 100 W and 120 W approach to BC₂N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power.     

感应耦合等离子体增强射频磁控溅射沉积ZrN薄膜及其性能研究

利用感应耦合等离子体(ICP)增强射频磁控溅射技术在Si(111)片和M2钢表面制备了ZrN薄膜,研究了基片的温度和ICP功率对ZrN薄膜的结构以及性能影响.研究发现：在基片温度≤300℃沉积的ZrN薄膜择优取向为(111);基片温度达到450℃时薄膜出现ZrN(200)衍射峰,ZrN(111)晶面的织构系数明显降低.传统磁控溅射沉积薄膜为柱状结构,当ICP为200 W,基片温度为300℃时沉积薄膜中柱状晶体消失;随着基片温度的升高,N/Zr元素比例降低,并且薄膜的电阻率下降;相对于传统溅射,ICP增强射 关键词： 感应耦合等离子体 磁控溅射 ZrN 微结构     

Effect of deposition power and pressure on rate deposition and resistivity of titanium thin films grown by DC magnetron sputtering

ABSTRACT

Based on magnetron sputtering deposition technology, titanium (Ti) thin films are deposited on silicon (Si) substrate using different preparation conditions such as sputtering power and pressure. The influence of altering these conditions on deposition rate and microstructure is studied. The results show that sputtering power significantly affects the rate of deposition and the resistivity. The deposition rate of the Ti thin film increases when the resistivity decreases under sputtering powers of 150–225?W with a pressure of 0.8?Pa and Argon (Ar) flux of 80 sccm. As sputtering power was increased further (from 225 to 250?W), the deposition rate reduced and the resistivity augmented. Pressure also has influence on the deposition rate and resistivity – when pressure increases from 0.6 to 0.8?Pa, the deposition rate escalates while the resistivity reduces; when the pressure is raised from 0.8 to 1.0?Pa with Ar flux of 100 sccm, the deposition rate decreases and resistivity increases. The surface chemical compositions and the structures of the Ti film were studied by using X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer (XRD). Observing the cross-section of the thin-film samples produced by scanning electron microscope (SEM) reveals the influence of the preparation conditions used on the microstructure and confirms the influence of sputtering power and pressure on the resistivity.     

磁控溅射制备的W,WSi2,Si单层膜和W/Si,WSi2/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜.利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值.结果表明:W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力.WSi2单层...     

FTIR法研究BCN薄膜的内应力

采用射频磁控溅射技术,用六角氮化硼和石墨为溅射靶,以氩气(Ar)和氮气(N₂)为工作气体,在Si(100)衬底上制备出硼碳氮(BCN)薄膜。利用傅里叶变换红外光谱(FTIR)考察了不同沉积参数(溅射功率为80～130 W、衬底温度为300～500 ℃、沉积时间为1～4 h)条件下制备的薄膜样品。实验结果表明,所制备薄膜均实现了原子级化合。并且沉积参数对BCN薄膜的生长和内应力有很大影响,适当改变沉积参数能有效释放BCN薄膜的内应力。在固定其他条件只改变一个沉积参数的情况下,得到制备具有较小内应力的硼碳氮薄膜的最佳沉积条件：溅射功率为80 W、衬底温度为400 ℃、沉积时间为2 h。     

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用射频等离子体增强非平衡磁控溅射在Si100基底上沉积了金属Cu膜。研究了偏压,射频功率和磁场等沉积参数对膜性能的影响。用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射(XRD)和电子能谱(EM)检测了膜的表面形貌,结构和成分。结果表明,射频放电有利于表面均匀光滑、电导率高的Cu沉积膜的形成;沉积参数对沉积膜的性能有重要的影响。     

直流磁控溅射制备AlN薄膜的结构和表面粗糙度

采用直流磁控反应溅射法,在Si(111)基底上成功制备了多晶六方相AlN薄膜.研究了溅射过程中溅射气压对薄膜结构和表面粗糙度的影响.结果表明:当溅射气压低于0.6 Pa时,薄膜为非晶态,在傅里叶变换红外光谱中,没有明显的吸收峰;当溅射气压不低于0.6 Pa时,薄膜的X射线衍射图中均出现了六方相的AlN(100)、(11...