共查询到20条相似文献,搜索用时 406 毫秒
1.
在ZnO单晶样品中注入了能量为20—100keV、总剂量为4.4×1015cm-2的He离子.利用基于慢正电子束的多普勒展宽测量研究了离子注入产生的缺陷.结果表明,He离子注入ZnO产生了双空位或更大的空位团.在400℃以下退火后,He开始填充到这些空位团里面,造成空位团的有效体积减少.经过400℃以上升温退火后,这些空位团的尺寸开始增大,但由于有少量的He仍然占据在空位团内,因此直到800℃这些空位团仍保持稳定.高于800℃退火后,由于He的脱附,留下的空位团
关键词:
慢正电子束
ZnO
离子注入
缺陷 相似文献
2.
3.
4.
5.
对离子注入法制备的u-,n-和p-GaN∶Er三种类型的薄膜样品进行了Raman光谱分析。Er+注入GaN样品后新出现了293,362和670 cm-1等波数的Raman峰,其中293 cm-1处的Raman峰被指认为无序激活的Raman散射(DARS),362 cm-1和670 cm-1处的Raman峰可能与离子注入后形成的GaN晶格缺陷有关。上述GaN∶Er样品在800℃退火前后的E2(high)特征峰均向高频方向移动,表明薄膜晶格中均存在着压应力。采用洛伦兹拟合分析了Raman光谱中组成A1(LO)模式峰的未耦合LO模与等离子体激元耦合模LPP+在不同样品中的出现情况,定性指出了GaN∶Er系列样品中载流子浓度的变化规律。 相似文献
6.
镶嵌有纳米硅的氮化硅薄膜键合特性分析 总被引:3,自引:2,他引:1
采用螺旋波等离子体化学气相沉积(HWPCVD)技术制备了非化学计量比的氢化氮化硅薄膜,对所沉积样品及氮气环境中920 ℃退火样品的微观结构及键合特性进行了分析。Raman散射结果表明,薄膜中过量硅以非晶纳米粒子形式存在,退火样品呈现纳米晶硅和氮化硅的镶嵌结构。红外吸收和可见光吸收特性比较结果显示,薄膜样品的微观结构依赖于化学计量比以及退火过程,硅含量较低样品因高的键合氢含量而表现出低的纳米硅表面缺陷态密度;退火过程将引起Si—H和N—H键合密度的减少,因晶态纳米颗粒的形成,退火样品表现出更高的结构无序度。 相似文献
7.
对充氚和未充氚的抗氢-2不锈钢(HR-2)样品进行退火处理,利用正电子湮没寿命谱技术以及金相检验技术探讨不锈钢中氦和微缺陷的相互作用行为.未充氚样品中,影响正电子寿命值的主要因素为杂质元素在晶界的析出.充氚样品实验中,退火温度小于300℃时,正电子寿命值的增加说明了氦泡的形成过程为非热形成,通过“冲出位错环”机制形成及长大;退火温度在300~600℃之间,充氚样品正电子寿命值的降低以及He的跃迁概率的计算结果,说明He原子通过热迁移至晶界;退火温度大于600℃时,热平衡空位浓度的计算结果以及正电子寿命值的增加说明热平衡空位开始发挥作用. 相似文献
8.
Ce~(3+)注入对超晶格中硅纳米晶光致发光强度的影响 总被引:1,自引:0,他引:1
研究了铈离子注入和二次退火等因素对硅纳米晶(nc-Si)发光强度的影响.利用电子柬蒸发以及高温退火得到nc-Si/SiO2超晶格结构.随后将该结构样晶分别注入2.0×1014cm2和2.0×1015cm-2剂量的铈离子(Ce3+),再分别以不同温度对其进行二次退火,获得多种样品.通过对样品光敏发光光谱的分析发现,Ce3+注入后未经过二次退火的样品发光强度急剧下降.二次退火后的样品,随着退火温度的升高,样品的光致发光灶度逐渐增强,但当温度超过600℃时,发光强度反而下降,600℃为二次退火的最佳退火温度.注入适当剂量的Ce3+,其发光强度可以超过未注入时的发光强度,Ce3+的注入存在饱和剂量.研究表明,样品发光强度的变化受到铈离子注入剂量和注入后二次退火温度等因素的影响,并且存在着Ce3+到nc-Si的能量传递. 相似文献
9.
本文用平面的透射电子显微术(TEM)、剖面的透射电子显微术(XTEM)以及卢瑟福背散射和沟道谱(RBS),研究InSb中离于注入Zn+,Mg+,Be+产生的二次缺陷。以及它们的退火特性。结果表明,轻离子Be+注入产生的二次缺陷比重离子Zn+注入产生的要少得多,而Mg+离子介于Be+离子和Zn+离子之间,在中等剂量下(1×1013cm-2附近),注入损伤并不严重,而且容易恢复。从360℃到440℃之间作了退火温度的研究。从研究结果发现,退火温度以360℃为佳。离子注入InSb中的二次缺陷的形貌与Si中的不同,InSb中的二次缺陷以位错网为主,位错环所占比例不大且尺寸较小,而沉淀物和层错四面体也出现在其中。
关键词: 相似文献
10.
11.
12.
13.
14.
Summary Germanium, arsenic and krypton ions of 600 keV energy were implanted in <100> silicon substrate at 250°C. The hot implantation
results in the formation of extended defects (dislocation loops and cluster of point defects) as residual damage. Rapid thermal
annealing process at a temperature above 1000°C was used to remove the damage. Rutherford-backscattering channelling technique
was used to measure the amount of defects and their annealing. In some cases the channelling results were correlated to transmission
electron microscopy (TEM) analysis. The annealing process of the damage is governed by an activation energy of (4.4±0.2) eV
for both germanium and arsenic implants. During RTA processes broadening of the As and Ge distributions is quite negligible.
The Kr atoms interact instead with defects and the annealing even after a prolonged time at 1100°C is not complete, bubbles
surrounded by extended defects are left
The authors of this paper have agreed to not receive the proofs for correction. 相似文献
15.
E. A. Little 《辐射效应与固体损伤》2013,168(2):149-152
Abstract The temperature dependence of the tensile lower yield stress of an annealed aluminium grain size controlled mild steel has been investigated in the range 23–250 °C and at a strain rate of 1.67 × 10?4 sec?l before and after neutron irradiation to 2.3 × 1018 n/cm2 (fission). The yield stress of the irradiated steel decreases with increasing temperature due to thermal activation of the radiation damage and is predicted to reach asymptotically that of the unirradiated steel at ~285 °C; the maximum test temperature was below that at which thermal annealing of the damage occurs. This implies that the athermal stress component due to irradiation is zero and hence there is negligible long range interaction between dislocations and radiation-induced defects. 相似文献
16.
Lei Zhong Zhanguo Wang Shouke Wan Jinbin Zhu F. Shimura 《Applied Physics A: Materials Science & Processing》1992,55(4):313-316
Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 meV below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy. 相似文献
17.
报导了在镍薄膜中掺入少量Mo提高了镍硅化物的热稳定性.结果表明,经650— 800℃快速热 退火形成的Ni(Mo)Si硅化物薄膜电阻值较低,约为2.4(Ω/□).XRD分析表明薄膜中只存在 NiSi相,而没有NiSi2生成.由吉布斯自由能理论分析表明在Ni薄膜中掺人5.9 %Mo对改善 Ni硅化物热稳定性起到至关重要的作用.经650—800℃快速热退火后的 Ni(Mo)Si/Si肖特基 二极管电学特性良好,势垒高度ΦB为0.64—0.66eV,理想因子接近于1,更 进一步证明掺少量的Mo能够改善NiSi薄膜的热稳定性.
关键词:
镍硅化物
快速热退火
x射线衍射分析
卢瑟福背散射 相似文献
18.
TiO2 thin film was deposited on non-heated Si(1 0 0) substrate by RF magnetron sputtering. The as-deposited films were annealed by a conventional thermal annealing (CTA) and rapid thermal annealing (RTA) at 700 and 800 °C, and the effects of annealing temperature and method on optical properties of studied films were investigated by measuring the optical band gaps and FT-IR spectra. And we also compared the XRD patterns of the studied samples. The as-deposited film showed a mixed structure of anatase and brookite. Only rutile structures were found in samples annealed above 800 °C by CTA, while there are no special peaks except the weak brookite B(2 3 2) peak for the sample annealed at (or above) 800 °C by RTA. FT-IR spectra show the broad peaks due to Ti-O vibration mode in the range of 590-620 cm−1 for the as-deposited film as well as samples annealed by both annealing methods at 700 °C. The studied samples all had the peaks from Si-O vibration mode, which seemed to be due to the reaction between TiO2 and Si substrate, and the intensities of these peaks increased with increasing of annealing temperature. The optical band gap of the as-deposited film was 3.29 eV but it varied from 3.39 to 3.43 eV as the annealing temperature increased from 700 to 800 °C in the samples annealed by CTA. However, it varied from 3.38 to 3.32 eV as the annealing temperature increased from 700 to 800 °C by RTA. 相似文献
19.
AlN films were grown at 785 °C on (0001) sapphire substrates by radio-frequency assisted molecular beam epitaxy. Post-growth rapid thermal annealing (RTA) was carried out from 900 to 1200 °C for 10 s in flowing N2. The morphological and structural properties of the AlN epilayers before and after the RTA were studied by atomic force microscopy, x-ray diffraction and transmission electron microscopy. It is found that the threading dislocations can be decreased to an order of magnitude by using an interlayer growth method. The surface roughness (RMS) of the AlN thin films becomes larger with the increase of annealing temperature. The full width at half maximum of AlN (0002) rocking curve reaches its minimum after the RTA at 1000 °C. 相似文献
20.
用Nd-YAG脉冲激光对n型硅掺铟,形成外p+n结。利用二次离子质谱仪(SIMS)、卢瑟福背散射(RBS)等方法,研究了硅内铟的分布,并分析了用20ns脉冲激光硅掺铟的物理过程,发现当激光能量密度足够大时,在硅表面层存在硅-铟混合熔体和液态硅两部分。当激光能量密度较小时,硅表面层仅有液态硅层、用I-V,C-V和深能级瞬态谱(DLTS)等方法研究了p+n结的电学性质,发现在p+n结的n区存在两个缺陷。一个能通过快速热退火,在600℃,60s条件下消失,研究表明可能为空位与杂质的复合体。另一个通过快速热退火不能消失,可能与位错有关。
关键词: 相似文献