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1.
The up-conversion luminescence tuning of rare-earth ions is an important research topic for understanding luminescence mechanisms and promoting related applications. In this paper, we experimentally study the up-conversion luminescence tuning of Er~(3+)-doped ceramic glass excited by the unshaped, V-shaped and cosine-shaped femtosecond laser field with different laser powers. The results show that green and red up-conversion luminescence can be effectively tuned by varying the power or spectral phase of the femtosecond laser field. We further analyze the up-conversion luminescence tuning mechanism by considering different excitation processes, including single-photon absorption(SPA), two-photon absorption(TPA), excited state absorption(ESA), and energy transfer up-conversion(ETU). The relative weight of TPA in the whole excitation process can increase with the increase of the laser power, thereby enhancing the intensity ratio between green and red luminescence(I_(547)/I_(656)). However, the second ETU(ETU2) process can generate red luminescence and reduce the green and red luminescence intensity ratio I_(547)/I_(656), while the third ESA(ESA3) process can produce green luminescence and enhance its control efficiency. Moreover, the up-conversion luminescence tuning mechanism is further validated by observing the up-conversion luminescence intensity, depending on the laser power and the down-conversion luminescence spectrum under the excitation of 400-nm femtosecond laser pulse. These studies can present a clear physical picture that enables us to understand the up-conversion luminescence tuning mechanism in rare-earth ions, and can also provide an opportunity to tune up-conversion luminescence to promote its related applications.  相似文献   

2.
Detailed spectroscopic studies of the triply doped KGd(WO4)2:Ho3+/Yb3+/Tm3+ single crystals (which exhibit multicolor up-conversion fluorescence) are reported for the first time. The absorption spectra of crystals were measured at 10 and 300 K; the room temperature luminescence spectra were excited at 980 nm wavelength. The dependence of the intensity of luminescence on the excitation power for three different concentration of Ho3+, Yb3+ and Tm3+ ions was investigated. Efficient green and red up-converted luminescence of Ho3+ ions and weak blue up-conversion luminescence of Tm3+ ions were observed in spectra. The red emission of Ho3+ ions is more intensive than their green emission. Dependence of the up-conversion luminescence intensity on the excitation power and impurities concentration was also studied; the number of phonon needed for efficient up-conversion was determined for each case. All possible energy transfer processes between different pairs of the impurity ions' energy levels are also discussed.  相似文献   

3.
The concentration dependence of the quantum yield of luminescence of Tm3+ ions in an oxychloride matrix has been measured in individual bands of their luminescence excited at different wavelengths. The concentration dependences of the quantum yield of luminescence were calculated with allowance for the effect of the unintentional impurity of rare-earth ions. The cross-relaxation nature of the concentration dependence of the rare-earth ion luminescence is discussed.Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 71, No. 6, pp. 759–765, November–December, 2004.This revised version was published online in April 2005 with a corrected cover date.  相似文献   

4.
稀土掺杂材料的上转换发光   总被引:2,自引:0,他引:2  
稀土掺杂材料的上转换发光是实现光波频率转换的重要途径,也是稀土掺杂发光材料研究的重要内容。本文从介绍与上转换相关的基本概念出发,阐述了稀土离子上转换发光的发展历史;对稀土离子掺杂材料的能量传递、激发态吸收、合作敏化、合作发光、双光子吸收激发及光子吸收雪崩等上转换发光机制进行了概述,并对各机制进行了比较;对不同稀土离子掺杂体系中上转换发光的机制进行了总结;对以往研究的稀土掺杂上转换发光材料的基质,包括粉体材料、晶体材料、非晶材料进行了概括;最后对影响稀土离子上转换发光效率的因素进行了分析,提出了在上转换发光材料的设计中应重点考虑基质对泵浦光及上转换发射光的吸收、基质材料的声子能量、稀土离子的掺杂方案及泵浦途径等因素。  相似文献   

5.
It has been shown that the presence of silicon nanoparticles in a layer of porous silicon saturated with tungsten-tellurite glass causes an increase in the photoluminescence quantum efficiency of erbium (1530 nm) by an order of magnitude in the case of long-wavelength excitation and an enhancement of the ytterbium photoluminescence (980 nm) by almost 50 times and erbium photoluminescence by 25 times in the case of short-wavelength pumping. This luminescence enhancement is explained by the formation of additional channels of transfer of external excitation by silicon nanocrystallites in porous silicon to impurity ytterbium and erbium ions in tungsten-tellurite glass.  相似文献   

6.
刘政威  阳效良  肖思国 《物理学报》2001,50(9):1795-1779
通过以TeO2,GeO2,ZnF2,SiO2,PbF2等为主体的氟氧化物玻璃陶瓷基质材料的研究提出了提高上转换效率的某些条件.选择低声子能量的基质,且基质的M系数接近稀土离子的M系数的氟氧化物基质材料是高效上转材料的基础,选择激发光光子能量与稀土离子、敏化稀土离子能级匹配是高效上转换材料的必要条件.为设计研究稀土掺杂能量上转换材料提供了有理论和应用价值的结果. 关键词: 能量上转换 氟氧化物玻璃陶瓷 稀土掺杂  相似文献   

7.
We have employed two-photon excitation to study the higher energy levels of Gd3+ ions in CaAl12O19 and we compare the results with those obtained using conventional UV excitation techniques. Under two-photon excitation, the luminescence intensity exhibits an unusual temporal behavior, a very long build-up followed by a decrease by orders of magnitude, ascribed to a recombination-assisted luminescence excitation mechanism assuming photo-ionization of Gd3+ ions and trapping of free electrons on deep traps.

We also find that the two-photon excitation spectra contain an additional broadening contribution which can be attributed to homogeneous broadening of excitation levels caused by excited state absorption into the conduction band. We believe that this may be a general phenomenon whenever participating photons produce ionization of impurity ions from metastable excited states. The phenomenon can manifest itself also in two-photon ionization spectral hole burning and in up-conversion processes (in the latter case, the homogeneous broadening can be caused by an intra-ion excited-state absorption).  相似文献   


8.
The excitation mechanism of rare-earth ions in silicon nanocrystals   总被引:2,自引:0,他引:2  
A detailed investigation on the excitation mechanisms of rare-earth (RE) ions introduced in Si nanocrystals (nc) is reported. Silicon nanocrystals were produced by high-dose 80-keV Si implantation in thermally grown SiO2 followed by 1100 °C annealing for 1 h. Subsequently some of the samples were implanted by 300-keV Er, Yb, Nd, or Tm at doses in the range 2×1012–3×1015 /cm2. The energy was chosen in such a way to locate the RE ions at the same depth where nanocrystals are. Finally an annealing at 900 °C for 5 min was performed in order to eliminate the implantation damage. These samples show intense room-temperature luminescence due to internal 4f shell transitions within the RE ions. For instance, luminescence at 1.54 μm and 0.98 μm is observed in Er-doped nc, at 0.98 μm in Yb-doped nc, at 0.92 μm in nc and two lines at 0.78 μm and 1.65 μm in Tm-doped nc. Furthermore, these signals are much more intense than those observed when RE ions are introduced in pure SiO2 in the absence of nanocrystals, demonstrating the important role of nanocrystals in efficiently exciting the REs. It is shown that the intense nc-related luminescence at around 0.85 μm decreases with increasing RE concentration and the energy is preferentially transferred from excitons in the nc to the RE ions which, subsequently, emit radiatively. The exact mechanism of energy transfer has been studied in detail by excitation spectroscopy measurements and time-resolved photoluminescence. On the basis of the obtained results a plausible phenomenological model for the energy transfer mechanism emerges. The pumping laser generates excitons within the Si nanocrystals. Excitons confined in the nc can either give their energy to an intrinsic luminescent center emitting at around 0.85 μm nor pass this energy to the RE 4f shell, thus exciting the ion. The shape of the luminescence spectra suggests that excited rare-earth ions are not incorporated within the nanocrystals and the energy is transferred at a distance while they are embedded within SiO2. Rare-earth excitation can quantitatively be described by an effective cross section σeff taking into account all the intermediate steps leading to excitation. We have directly measured σeff for Er in Si nc obtaining a value of ≈2×10−17 cm2. This value is much higher than the cross section for excitation through direct photon absorption (8×10−21 cm2) demonstrating that this process is extremely efficient. Furthermore, the non-radiative decay processes typically limiting rare-earth luminescence in Si (namely back-transfer and Auger) are demonstrated to be absent in Si nc further improving the overall efficiency of the process. These data are reported and their implications. Received: 9 April 1999 / Accepted: 10 April 1999 / Published online: 2 June 1999  相似文献   

9.
立体显示为现代重要的科学前沿。上转换三维立体显示为一种新颖的自体视三维立体显示,在1996年被评为十大科技创新成就之一,现正向应用快速发展。研究了1 520 nm半导体激光激发的Er(0.5):FOG材料的上转换发光,发现了(407.43, 411.20 nm), (522.51m, 528.57 nm), (540.53m, 543.70,549.00 nm), (654.75m, 665.50 nm), 和802.10m nm的上转换发光(m代表主峰),依次为(2G4F2H)9/2→4I15/2, 4H11/2→4I15/2, 4S3/2→4I15/2, 4F9/2→4I15/2和4I9/2→4I15/2的跃迁。值得注意的是上转换发光强度随激光功率变化的双对数曲线的斜率有各种各样的值。通过详细研究发现(407.43, 411.20 nm)的(2G4F2H)9/2→4I15/2上转换发光是四光子荧光;(522.51m, 528.57 nm)的2H11/2→4I15/2,(540.53m, 543.70,549.00 nm)的4S3/2→4I15/2和(654.75m, 665.50 nm)的4F9/2→4I15/2的上转换发光为三光子荧光;而802.10m nm的4I9/2→4I15/2上转换发光为双光子荧光。很明显从基态4I15/2到第一激发态的吸收很大,因为它的振子强度f和与1 520 nm激光的匹配都很好,随后的起源于第一激发态的能量传递和相继吸收都很易于发生,这导致了1 520 nm激光激发下的Er(0.5): FOG材料的丰富和有意义的上转换发光现象。  相似文献   

10.
Improving the up-conversion luminescence efficiency of rare-earth ions via the multi-photon absorption process is crucial in several related application areas. In this work, we theoretically propose a feasible scheme to enhance the resonance-mediated two-photon absorption in Er~(3+) ions by shaping the femtosecond laser field with a rectangle phase modulation. Our theoretical results show that the resonance-mediated two-photon absorption can be decomposed into the on-resonant and near-resonant parts, and the on-resonant part mainly comes from the contribution of laser central frequency components, while the near-resonant part mainly results from the excitation of low and high laser frequency components.So, the rectangle phase modulation can induce a constructive interference between the two parts by properly designing the modulation depth and width, and finally realizes the resonance-mediated two-photon absorption enhancement. Moreover, our results also show that the enhancement efficiency of resonance-mediated two-photon absorption depends on the laser pulse width(or laser spectral bandwidth), final state transition frequency, and intermediate and final state absorption bandwidths. The enhancement efficiency modulation can be attributed to the relative weight manipulation of on-resonant and near-resonant two-photon absorption in the whole excitation process. This study presents a clear physical insight for the quantum control of resonance-mediated two-photon absorption in the rare-earth ions, and there will be an important significance for improving the up-conversion luminescence efficiency of rare-earthions.  相似文献   

11.
稀土掺杂磷酸钇荧光粉的控制合成和发光性能   总被引:1,自引:1,他引:0       下载免费PDF全文
利用水热法分别合成了Ce~(3+)、Tb~(3+)共掺杂的YPO_4下转换荧光粉和Er~(3+)、Yb~(3+)、Tm~(3+)共掺杂的YPO_4上转换荧光粉,经过工艺优化获得了1μm左右尺寸均匀的发光材料。通过系列实验研究了反应温度、反应时间、稀土离子掺杂比例和退火温度对样品发光性能的影响。YPO_4∶Ce~(3+),Tb~(3+)荧光粉在295 nm紫外光的激发下产生下转换发光效应,当Tb~(3+)摩尔分数为1%时得到明亮的绿光;YPO_4∶Er~(3+),Tm~(3+),Yb~(3+)荧光粉在980nm近红外光激发下产生上转换发光效应,当稀土离子中Er~(3+)摩尔分数为3%时,所制备的样品经过1 000℃退火处理后发出很强的暖白光。  相似文献   

12.
张晖  姚云华  张诗按  卢晨晖  孙真荣 《中国物理 B》2016,25(2):23201-023201
We propose a femtosecond laser polarization modulation scheme to control the up-conversion(UC) luminescence in Er~(3+)-doped NaYF_4 nanocrystals dispersed in the silicate glass. We show that the UC luminescence can be suppressed when the laser polarization is changed from linear through elliptical to circular, and the higher repetition rate will yield the lower control efficiency. We theoretically analyze the physical control mechanism of the UC luminescence polarization modulation by considering on- and near-resonant two-photon absorption, energy transfer up-conversion, and excited state absorption, and show that the polarization control mainly comes from the contribution of near-resonant two-photon absorption. Furthermore, we propose a method to improve the polarization control efficiency of UC luminescence in rare-earth ions by applying a two-color femtosecond laser field.  相似文献   

13.
The luminescence of excitons and antisite defects (ADs) was investigated, as well as the specific features of the excitation energy transfer from excitons and ADs to the activator (Ce3+ ion) in phosphors based on Lu3Al5O12:Ce (LuAG:Ce) single crystals and single-crystalline films, which are characterized by significantly different concentrations of ADs of the Lu Al 3+ type and vacancy-type defects. The luminescence band with λmax = 249 nm in LuAG:Ce single-crystal films is due to the luminescence of self-trapped excitons (STEs) at regular sites of the garnet lattice. The excited state of STEs is characterized by the presence of two radiative levels with significantly different transition probabilities, which is responsible for the presence of two excitation bands with λmax = 160 and 167 nm and two components (fast and slow) in the decay kinetics of the STE luminescence. In LuAG:Ce single crystals, in contrast to single-crystal films, the radiative relaxation of STEs in the band with λmax = 253.5 nm occurs predominantly near Lu Al 3+ ADs. The intrinsic luminescence of LuAG:Ce single crystals at 300 K in the band with λmax = 325 nm (τ = 540 ns), which is excited in the band with λmax = 175 nm, is due to the radiative recombination of electrons with holes localized near Lu Al 3+ ADs. In LuAG:Ce single crystals, the excitation of the luminescence of Ce3+ ions occurs to a large extent with the participation of ADs. As a result, slow components are present in the luminescence decay of Ce3+ ions in LuAG:Ce single crystals due to both the reabsorption of the UV AD luminescence in the 4f-5d absorption band of Ce3+ ions with λmax = 340 nm and the intermediate localization of charge carriers at ADs and vacancy-type defects. In contrast to single crystals, in phosphors based on LuAG:Ce single-crystal films, the contribution of slow components to the luminescence of Ce3+ ions is significantly smaller due to a low concentration of these types of defects.  相似文献   

14.
The photoexcitation spectra (70–280 nm) of the Eu 3+ , Tb 3+ , Dy 3+ , Er 3+ , and Tm 3+ ion luminescence in strontium fluoride crystals are studied at 8 and 295 K by vacuum ultraviolet spectroscopy using synchrotron-radiation excitation. The processes of transfer of the excitation energy to the impurity centers as well as the relaxation mechanisms of the excited high-energy states of the rare-earth ions are analyzed. The bands corresponding to the interconfiguration 4f—5d transitions and the charge-transfer bands are identified in the photoexcitation luminescence spectra. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 85–89, September, 2005.  相似文献   

15.
李慧  杨魁胜  祁宁  左周 《中国光学》2011,4(6):672-677
采用高温熔融法制备了Yb3+/Er3+掺杂的氟氧化物发光微晶玻璃,确定了最佳熔化温度(1 100℃)和退火温度(440℃,480℃)。测定得到基质玻璃的透过率为85%,掺入稀土后,透过率有所下降,并出现了稀土离子的特征吸收峰。980 nm半导体激光器(LD)激发下样品的上转换发射光谱存在4个明显的发射峰,分别为410,532,546和656 nm,对应于2H9/2→4I15/2,2H11/2→4I15/2,4S3/2→4I15/2和4F9/2→4I15/2跃迁。研究了不同Yb3+/Er3+(摩尔分数)和Er3+浓度对上转换发光强度的影响,当Yb3+∶Er3+=4∶1、Er3+摩尔分数为1.5%时,上转换发光强度达到最高。根据发光强度与泵浦功率之间的关系,确定了上转换发射均为双光子过程。讨论了Yb3+,Er3+离子间的能量传递,建立了上转换发光机制。  相似文献   

16.
Three sharp absorption features in the energy range 2.36–2.55 eV have been detected in the transmission spectrum of Co-diffused ZnSe, and a number of luminescence transitions originating from the lowest of these states at 2.361 eV have been observed. Photoluminescence excitation spectra prove that these are high energy excited states of the Co2+Zn impurity, a conclusion confirmed by comparison of measured and predicted luminescence energies. This represents the first identification of luminescence branching from a higher excited state of a transition metal ion in any semiconductor. The sharp, weakly phonon-coupled transitions involve either intra-impurity excitation or transitions from the impurity to localised states split off from a minimum in the conduction band. The implications of these observations for the mechanism of host-impurity energy transfer and for the nature of the excited state wavefunctions are discussed.  相似文献   

17.
Phosphorescence properties are investigated in Y2O2S phosphors doped with rare-earth (lanthanoid, Ln) ions. Luminescence afterglow with a decay time of several ten milliseconds is observed at room temperature in the phosphors activated by Nd, Sm, Eu, Dy, Ho, Tm, Er, and Yb. The depths (thermal activation energies) of the traps causing the afterglow are measured with the transient luminescence method.It is concluded that the excited electron and the hole in the conduction and valence bands are trapped separately in the states (impurity levels) located in the vicinity of the Ln3+ ion. The trapping depths of the level range from 0.3 to 1.1 eV and are dependent on the electron affinity of the Ln3+ ion estimated from the energy difference between the 4fn+1 and the 4fn configurations in the 4f shell of the ion.  相似文献   

18.
刘自军  杨旅云  戴能利  李进延 《物理学报》2011,60(4):47806-047806
报道了一种新的可用长波紫外有效激发的三基色发光玻璃.这种三基色荧光玻璃样品是在相同硅硼酸盐基质中掺杂Ce3+/Mn2+, Ce3+/Tb3+以及Eu2+并采用熔融法制备出的.其中Mn2+,Tb3+,Eu2+作为激活离子,Ce3+作为敏化剂向激活离子提供能量.由于敏化剂的加入使这种三基色发光玻璃在长波紫外激发下获 关键词: 三基色发光 能量传递 长波紫外 发光玻璃  相似文献   

19.
为了获得BaY_2ZnO_5:Tm~(3+)/Yb~(3+)荧光粉材料的最大蓝色上转换发光强度,采用正交试验设计与二次通用旋转组合设计相结合的两步连续优化法对Tm~(3+)和Yb~(3+)掺杂浓度进行全局优化,得到该体系最强蓝光发射下的离子掺杂最佳浓度.采用高温固相反应法合成出蓝色上转换发光强度最强的BaY_2ZnO_5:Tm~(3+)/Yb~(3+)荧光粉材料,并对样品的晶体结构和上转换发光性质进行了研究.980nm红外光激发下,测量了最优样品在不同激发电流下的上转换发射光谱,由强度制约关系确定样品的蓝色上转换发光为三光子过程.测量了最优样品温度相关的上转换发射光谱,发现样品的蓝色上转换发光强度随着样品温度的升高而持续减弱,即发生了温度猝灭现象,计算得激活能约为0.602eV.  相似文献   

20.
The luminescence of Ca2GeO4: Cr4+ single crystals at wavelengths in the range of 1.3 μm upon excitation with a 1-μ m semiconductor laser is investigated in the temperature range up to 573 K. At T<110 K, the Ca2GeO4: Cr4+ crystals are characterized by the electron paramagnetic resonance, which is attributed to the Cr4+ ions substituted for Ge4+ ions. The components of the g tensor and its principal axes are determined. It is revealed that the Cr4+ impurity centers in calcium germanate affect the crystal symmetry to a lesser degree compared to Cr4+ ions in forsterite. The observed deviation of the temperature dependence of the electron paramagnetic resonance from the Curie law is explained by the transition to the excited state with a low activation energy, as is the case in impurity 3d ions in diamond-like semiconductors. The inference is made that the giant effective degeneracy multiplicity of the excited state is associated with the initiation of soft phonon modes in the crystal upon excitation of the defect.  相似文献   

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