Influence of cesium on the stability of a GaAs photocathode

The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature.We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current,and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode.We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode.Our results support the double dipolar model for the explanation of the negative electron affinity effect.     

Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.     

Electric dipolar interaction assisted growth of single crystalline organic thin films

We report on a forest-like-to-desert-like pattern evolution in the growth of an organic thin film observed by using an atomic force microscope. We use a modified diffusion limited aggregation model to simulate the growth process and are able to reproduce the experimental patterns. The energy of electric dipole interaction is calculated and determined to be the driving force for the pattern formation and evolution. Based on these results, single crystalline films are obtained by enhancing the electric dipole interaction while limiting effects of other growth parameters.     

System size in relativistic heavy ion collisions

System size is more than a geometrical quantity in relativistic heavy ion collisions; it is closely related to evolution process, i.e. a different system size corresponds to a different evolution process, and whether QGP is produced depends on the system size. We propose that the system size should be under the same level when comparing the measurements from different colliding nuclei. The equivalence of the peripheral collisions of Au-Au and the central collisions of smaller nuclei is studied using the Monte Carlo method. Comparing the transverse overlapping area of the colliding nuclei, the number of participant nucleons and the number of nucleon-nucleon binary collisions in various colliding nuclei, we give an estimate of the correspondence in system size. This is helpful in the experimental comparison of the measurements from different colliding nuclei.     

An application of half-terrace model to surface ripening of non-bulk GaAs layers

In order to predict the actual quantity of non-bulk GaAs layers after long-time homoepitaxy on GaAs （001） by theo- retical calculation, a half-terrace diffusion model based on thermodynamics is used to calculate the ripening time of GaAs layers to form a fiat morphology in annealing. To verify the accuracy of the calculation, real space scanning tunneling microscopy images of GaAs surface after different annealing times are obtained and the roughness of the GaAs surface is measured. The results suggest that the half terrace model is an accurate method with a relative error of about 4.1%.     

Size-dependent thermal stresses in the core–shell nanoparticles

The thermal stress in a magnetic core–shell nanoparticle during a thermal process is an important parameter to be known and controlled in the magnetization process of the core–shell system. In this paper we analyze the stress that appears in a core–shell nanoparticle subjected to a cooling process. The external surface temperature of the system, considered in equilibrium at room temperature, is instantly reduced to a target temperature. The thermal evolution of the system in time and the induced stress are studied using an analytical model based on a time-dependent heat conduction equation and a differential displacement equation in the formalism of elastic displacements. The source of internal stress is the difference in contraction between core and shell materials due to the temperature change. The thermal stress decreases in time and is minimized when the system reaches the thermal equilibrium. The radial and azimuthal stress components depend on system geometry, material properties, and initial and final temperatures. The magnitude of the stress changes the magnetic state of the core–shell system. For some materials, the values of the thermal stresses are larger than their specific elastic limits and the materials begin to deform plastically in the cooling process. The presence of the induced anisotropy due to the plastic deformation modifies the magnetic domain structure and the magnetic behavior of the system.     

Microstructure on Surface of LiNbO3：Fe Induced by a Single Ultra—Short Laser Pulse

A tightly focused femtosecond Ti:sapphire laser pulse is used to initiate micro-explosions on the surface and internal to an Fe:LiNb03 crystal. The resulting structure is morphologically different from that induced in an isotropic sample such as fused silica. The regular pyramid and irregular pyramid craters on the surface of the sample are produced at different positions of focal points. The craters suggest vaporization of materials in the process of micro-explosion due to the expansion of high temperature plasma. The embossment pyramids on the surface present the dynamical process of large volume material displacements under high temperature and pressure, and recrystallization of anisotropy crystal materials.     

Scaling Behaviour and Memory in Heart Rate of Healthy Human

We investigate a set of complex heart rate time series from healthy human in different behaviour states with the detrended fluctuation analysis and diffusion entropy （DE） method. It is proposed that the scaling properties are influenced by behaviour states. The memory detected by DE exhibits an approximately same pattern after a detrending procedure. Both of them demonstrate the long-range strong correlations in heart rate. These findings may be helpful to understand the underlying dynamical evolution process in the heart rate control system, as well as to model the cardiac dynamic process.     

Variational Calculations of Neutral Bound Excitons in GaAs Quantum-Well Wires

The binding energy of an exciton bound to a neutral donor (D^0, X) in GaAs quantum-well wires is calculated variationally as a function of the wire width for different positions of the impurity inside the wire by using a two-parameter wavefunction. There is no artificial parameter added in our calculation. The results we have obtained show that the binding energies are closely correlated to the sizes of the wire, the impurity position, and also that their magnitudes are greater than those in the two-dimensional quantum wells compared. In addition, we also calculate the average interparticle distance as a function of the wire width. The results are discussed in detail.     

Charge State Evolution of Uranium in Electron Beam Ion Trap

We present a calculation scheme with significant modifications and improvements for determining the ionization balance and the ion temperature evolution in an electron beam ion trap (EBIT). The scheme is applied to uranium and nitrogen ions using a specific set of EBIT operating parameters. The calculation results are compared to the experimental data. Rates for the individual atomic processes in EBIT, especially single and multiple charge exchange processes, are discussed. The time evolution of the ion temperatures for uranium and its coolant nitrogen are also given.     

Photoemission from p-GaAs(001) with nonequilibrium cesium overlayers

The dependences of the photoemission current and effective electron affinity on the submonolayer cesium coverage at the adsorption of Cs on a GaAs(001) surface, as well as the kinetics of the photocurrent and affinity after the termination of Cs deposition, which is caused by the relaxation of the structure of a nonequilibrium adsorption layer, have been experimentally studied. The revealed features in the dependence of the photocurrent on the Cs coverage are attributed to a nonmonotonic behavior of the surface band bending in the Cs/GaAs(001) system. It has been established that a relaxation decrease in the photocurrent in the case of coverages smaller than half a monolayer is due to the relaxation of the band bending, whereas an increase in the photocurrent at larger coverages is caused by the relaxation of the electron affinity.     

铯氧比对砷化镓光电阴极激活结果的影响

实验和理论分析结果表明,激活成功的砷化镓光电阴极的铯氧比存在一个最佳值.砷化镓光电阴极铯氧比的控制可通过调节激活过程中铯源和氧源的加热电流大小来实现.激活实验结果表明,铯氧电流比适中的样品,首次进氧时,光电流上升速度最快,激活后的阴极量子效率最高,稳定性好.当偏离这个比例,过大或过小时,光电流上升速度都会减慢,激活结果也比前者差.随着铯氧电流比的增大,铯氧交替的总次数随之减少.最佳铯氧电流比的调节应以首次进氧时光电流的上升速度最快为准,一旦确定后在整个铯氧交替过程中保持不变.     

超高真空系统中GaAlAs光电阴极的重新铯化研究

为了探索在超高真空系统中使用稳定性和重复性好的光电阴极,开展了金属有机化学气相沉积生长的反射式GaAlAs和GaAs光电阴极的激活实验和重新铯化实验,测试了Cs/O激活后和重新补Cs后的光谱响应曲线和光电流衰减曲线.实验结果表明,在100 lx白光照射条件下,超高真空环境中的GaAlAs光电阴极在Cs/O激活后和重新补Cs激活后的光电流衰减寿命相比GaAs光电阴极更长,并且在多次补Cs激活后呈现较一致的蓝绿光响应能力和光电流衰减寿命,体现了GaAlAs光电阴极在真空系统中稳定性和可重复性使用方面具有的优越性,为海洋真空探测器件和真空电子源领域的研究提供了实验指导.     

Adsorption kinetics of the Cs–O activation layer on GaAs(1 0 0)

In this work, we study the adsorption of (molecular) oxygen on Cs-covered GaAs(1 0 0) surfaces at RT. The study took place in a multi-method UHV system using the techniques such as low energy electron diffraction (LEED), Auger electron spectroscopy (AES), work function measurements (WF), thermal desorption spectroscopy (TDS), secondary ion mass spectroscopy (SIMS) and electron stimulated desorption (ESD) spectroscopy in correlation with the photocurrent measurements. It is shown that the oxygen burrows under the Cs overlayer and interacts at low exposures with the GaAs substrate, whereas at higher exposures oxygen interacts also with Cs leading to Cs oxides. The maximum photocurrent appears after the WF minimum and before the oxidation of Cs. Our results support the dipolar model for the explanation of the negative electron affinity effect.     

Electric field effect in the spin dynamics of self-assembled InAs/GaAs quantum dots

We identify fundamental mechanisms of electron and hole dynamics in self-organized InAs/GaAs quantum dots (QDs) subject to vertical electric fields by photocurrent investigations. We propose a spin–flip mechanism involving a spin exchange between neighboring QDs. The spin–flip process is revealed in the photocurrent dynamics when the exciton population increases unexpectedly with reverse bias.     

不同Cs、O电流比激活对GaAs光阴极灵敏度和稳定性的影响

鉴于不同的铯氧电流激活GaAs光阴极时会对激活过程和结果产生不同的影响,从而影响GaAs光阴极的灵敏度和稳定性.以固定铯源电流,改变氧源电流的方式获取不同铯、氧电流比,激活同类GaAs光阴极,得到了3组实验数据.对数据进行分析,结果表明:同类光阴极在相同条件下激活时,光电流出现的时间几乎一致,并且首个光电流峰值也非常接近;激活时ICs/IO=1.07是目前获得高灵敏度、高稳定性GaAs光阴极的最佳电流比,而ICs/IO=1.10时光阴极灵敏度低但稳定性好,ICs/IO=1.03时光阴极灵敏度高但稳定性差.双偶极层模型认为Cs、O激活后GaAs表面形成了稳定均匀的GaAs-O-Cs:Cs-O-Cs双偶极层,并达到了负电子亲和势,这一点与实验数据的分析结果相一致.该方法可用于提高GaAs光阴极灵敏度和稳定性.     

负电子亲和势GaN光电阴极激活机理研究

利用自行研制的光电阴极激活评估实验系统,给出了GaN光电阴极Cs激活及Cs/O激活的光电流曲线.针对GaN光电阴极的负电子亲和势（NEA）特性的成因,结合激活过程中光电流变化规律和成功激活后的阴极表面模型,研究了NEA GaN光电阴极激活机理.实验表明：GaN光电阴极在单独导入Cs激活时就可获得明显的NEA特性,Cs/O激活时引入O后光电流的增长幅度不大.用双偶极层模型［GaN（Mg）：Cs］：O—Cs较好地解释了激活成功后GaN光电阴极NEA特性的成因. 关键词： 负电子亲和势 GaN 激活 光电流     

高温Cs激活GaAs光电阴极表面机理研究

研究了高温Cs激活过程中,GaAs光电阴极表面势垒的变化机理。在考虑GaAs材料体内负电性p型掺杂杂质与材料表面正电性Cs+所形成的偶极子对表面势垒的作用后,通过求解均匀掺杂阴极中电子所遵循的一维连续性方程,得到了反射式均匀掺杂阴极的量子效率公式,通过求解薛定谔方程得到了到达阴极表面的光电子的逸出概率公式,利用公式对GaAs光电阴极的Cs激活过程进行了分析。分析发现,激活过程中GaAs光电阴极的量子效率和光电子的逸出概率正比于偶极子层的电场强度。     

GaN光电阴极表面势垒对电子逸出几率的影响

针对GaN光电阴极表面势垒对电子逸出几率的影响问题,应用玻尓兹曼分布和基于Airy函数的传递矩阵法计算了GaN光电阴极的电子逸出几率,发现电子逸出几率主要由I势垒决定,II势垒对电子逸出几率的影响有限.利用自行研制的GaN光电阴极激活评估实验系统,测试了透射式GaN光电阴极样品的激活光电流.实验发现,Cs单独激活引起电子逸出几率的显著增加,而Cs单独充分激活后的Cs/O交替激活对电子逸出几率的影响有限.理论计算结果与激活光电流测试结果一致,其原因是Cs单独激活对降低真空能级的贡献远大于Cs/O共同激活.