共查询到19条相似文献,搜索用时 125 毫秒
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随着波分复用技术的发展,共振腔增强(RCE)探测器由于具有波长选择特性和高和量子效率得到重视和发展。本文报道了采用智能剥离和溶胶-凝胶方法研制出一种可用于Si基RCE光电探测器SOR衬底。得到表面是单晶Si膜且具有高反向率的Si基片。设计和模拟了基于该衬底的SiGeRCE光电探测器,结果表明该结构可以大幅度提高Si基探测器的量子效率。 相似文献
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雪崩光电二极管由于具有高增益特性而广泛应用于激光测距机中,但由于在电流倍增过程中引入的高附加噪声,使激光测距机进一步提高信噪比遇到了瓶颈。石墨烯具有高电子迁移率、零带隙结构、独特光吸收系数等特性使其广泛应用于激光器、光调制器、透明电极以及超快光电探测器。该研究提出了一种高信噪比的谐振腔型石墨烯光电探测器的设计方法。以波长为1.06μm的激光为例,采用光学传输矩阵法和散射矩阵法,研究了光波在谐振腔传输和吸收层吸收的机理,建立了谐振腔型光电探测器的光吸收模型,通过优化,器件最终量子效率达到91.2%,响应度达到0.778A·W~(-1),半高全宽达到6nm;分析石墨烯在谐振腔中的位置对器件吸收率的影响,发现在满足谐振条件下,器件吸收率随石墨烯位置呈现周期性变化,腔长的改变不改变吸收率峰值,而是改变了吸收率峰值对应的石墨烯在谐振腔中的位置,当腔长是入射光半波长的n倍时,随着石墨烯位置变化,将出现2n个吸收率峰值,且关于谐振腔中心点对称分布;选择石墨烯距顶层反射镜0.402 8μm时,器件吸收率达到94%,相比单层石墨烯,吸收率提高了16dB;通过对比求解谐振腔型石墨烯光电探测器和雪崩光电二极管信噪比方程,得出谐振腔型石墨烯光电探测器信噪比可达到90.3,较雪崩光电二极管提高了10dB;理论分析表明,谐振腔型石墨烯光电探测器具有高吸收率、高量子效率和高信噪比,研究成果将对激光测距机接收系统中光电探测器的更新设计和应用提供理论参考。 相似文献
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研制了一种GaAs基波长可调谐共振腔增强型探测器. 采用分子束外延设备生长In0.25Ga0.75As/GaAs量子阱作为器件的有源区, 无偏压时器件的响应峰波长在1071 nm,器件在21 V的直流调谐电压下,实现了波长大于23 nm的调谐. 统计结果表明,当调谐电压大于5 V时,调谐电压与响应波长之间具有稳定、精确的对应关系, 且近似线性调谐,同时对器件响应峰的特性进行了理论分析.
关键词:
GaAs
共振腔增强型探测器
高稳定
线性调谐 相似文献
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针对量子点场效应单光子探测器(QDFET)光吸收效率低下的问题, 提出了一种新型量子点场效应增强型单光子探测器(QDFEE-SPD). QDFEE-SPD增加了共振腔的设计, 并采用了GaAs/AlAs多层膜作为下反射镜; 对QDFEE-SPD的光吸收增强效应和光响应度进行了理论分析和模拟, 结果表明, 与没有共振腔时相比, QDFEE-SPD的吸收效率和光相应度都有了大幅度的提升, 同时为了光吸收的最优化, 吸收层厚度一般应在0.1–0.5 μm; 对QDFEE-SPD的材料样品进行了生长和测试实验, 反射谱测试和PL谱测试结果表明, QDFEE-SPD对入射光的吸收具有了明显的增强效应. 文章成果为高效率量子点场效应单光子探测技术的研究提供了新的思路.
关键词:
QDFEE-SPD
共振腔
吸收效率
光吸收增强效应 相似文献
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将二维金属光栅结构引入到探测器结构中,以提高太赫兹(THz)量子阱光电探测器的探测率。采用三维时域有限差分算法,建立了THz量子阱光电探测器的二维金属光栅仿真模型,详细分析了二维金属光栅参数对太赫兹量子阱光电探测器的电场强度的影响。仿真分析结果表明:当入射光频率为6.27 THz(相对应波长为47.847 m)、光栅周期P=10.5 m、占空比=0.55(金属块宽度w= 5.755 m)、光栅层厚度h=0.4 m时,器件中的Z方向上的电场值最大,光栅的耦合效率最高。 相似文献
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A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 μm has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0.16 A/W at the resonance wavelength of 1.55 μm have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. 相似文献
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Narrow spectral band infrared detectors are required for multispectral infrared imaging. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Bragg mirror (consisting of quarter wavelength PbEuSe/BaF2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained. 相似文献
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A new kind of wavelength selective photoreceiver is proposed. It was constructed by a Fabry-Perot (F-P) etalon filter and a resonant cavity enhanced (RCE) photodetector. The photoreceiver′s spectral response is determined by the F-P etalon filter with a FWHM of less than 4 nm. Moreover, with such a photoreceiver, the transmission loss of the F-P etalon filter can be compensated to some extent. And this will benefit its applications. 相似文献
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Narrow spectral band infrared detectors are required for multispectral infrared imaging. Wavelength selectivity can be obtained
by placing passive line filters in front of the detectors, or, the preferred choice, by making the detectors themselves wavelength
selective. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide
(PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial
Brugg mirror (consisting of quarter wavelength PbEuSe/BaF2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak
quantum efficiencies up to above 50% are obtained.
The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 59570B (2005). 相似文献
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1 Introduction AlongwiththegreatdevelopmentofWDMapplications ,thewavelengthselectivephotodetectionisbeneficialtotheopticalfibercommunication .Uptodate ,therehavebeenmanykindsofwavelengthselectivephotoreceiversthatarebeingappliedforsuchapurpose .Theyareu… 相似文献
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Wavelength Division Multiplexing (WDM) is a key enabling technology for increasing the transmission capacity of optical fiber communication systems. Recently, a new family of optoelectronic devices, including detectors, switches, and emitters, that is based on resonant cavity enhancement, has emerged. Wavelength selective optoelectronic switching is achieved by placing a photothyristor in an asymmetric Fabry-Perot cavity, which provides a highly selective response at a wavelength determined during device fabrication. These WDM optoelectronic devices haue promising applications in optical COmmunications and optical logic circuits. Results on a N-p-n-p optoelectronic switch with a ten wavelength channel capability are presented. 相似文献
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1.3μm GaInNAs量子阱RCE光探测器 总被引:6,自引:3,他引:3
采用配有dc-N plasma N源的分子束外延(MBE)技术在GaAs衬底上生长制作了工作波长为1,3μm的GaInNAs量子阱RCE探测器.采用传输矩阵法对器件结构进行优化.吸收区由三个GaInNAs量子阱构成,并用湿法刻蚀和聚酰亚胺对器件进行隔离.在零偏压下,器件最大的量子效率为12%,半峰值全宽(FWHM)为5.8nm,3dB带宽为30MHz,暗电流为2×10-11A.通过对MBE生长条件和器件结构的优化,将进一步提高该器件的性能. 相似文献
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Resonant cavity enhancement (RCE) typed optical detector and modulator which operating at wavelength band of 1.06 μm is reported. The peak quantum efficiency of detector is reasonably high as 50% without bias, and the photocurrent contrast ratio of modulator is 3.6 times at -3.5 V as compared to 0 V. The incident angle dependence of RCE device's photoelectric response is investigated carefully. 相似文献