掺杂CuPc的MEH-PPV/PCBM有机太阳电池研究

采用旋涂法制备了掺杂铜酞菁(CuPc)的聚(2-甲氧基,5-(2-乙基-乙氧基)-对苯乙炔)(MEH-PPV)/ 富勒烯衍生物(PCBM)有机太阳电池. 测试结果表明:掺杂15% CuPc的MEH-PPV/PCBM太阳电池效率(1.41%)比标准的MEH-PPV/PCBM太阳电池(1.26%)提高12%. 器件的吸收谱和迁移率测试表明CuPc导致的吸收谱增强和迁移率提高是器件效率提高的主要原因. 关键词： 有机太阳电池 CuPc掺杂 MEH-PPV/PCBM器件     

多环类苝四甲酸二酐插入层对ZnO纳米棒和聚合物复合太阳电池性能的影响

以ZnO纳米棒和聚[2-甲氧基-5-(2-乙基-己氧基)-1,4-苯撑乙烯撑](MEH-PPV)的复合体系作为光敏层制备了太阳电池.为了增大电池的光吸收,在ZnO纳米棒与MEH-PPV之间插入了有机n型小分子多环类苝四甲酸二酐(PTCDA),制备了不同厚度的PTCDA、结构为ITO/ZnO纳米棒/PTCDA/MEH-PPV/Au的太阳电池.实验发现,插入PTCDA后,电池在可见光区的吸收增强,光生激子数量增大,光电流密度增大.当蒸镀的PTCDA厚度为40 nm时,薄膜的粗糙度适中,表面形貌较为平滑,器件性 关键词： 有机太阳电池 ZnO纳米棒 聚合物     

纳米MEH-PPV阵列的光致发光

以多孔氧化铝为模板,将可溶性发光聚合物聚（2-甲氧基-5-（2’-乙基己氧基）-1,4-对苯乙炔）（MEH-PPV）镶嵌在纳米孔中,制备出高发光效率的纳米发光聚合物阵列,其光学特性与MEH-PPV薄膜显著不同。纳米孔内的MEH-PPV分子链形成链束,链束中的分子链数目依赖于制备纳米MEH-PPV阵列所用溶液的浓度。相对于稀溶液,在由浓溶液制备的纳米MEH-PPV阵列中,MEH—PPV链束的分子链数目较多,链间作用使MEH-PPV的能带展宽,能隙减小,因而浓溶液获得的纳米MEH—PPV阵列的光致发光峰红移。热处理纳米MEH-PPV阵列的PL谱表明,纳米孔内的聚合物分子链的弛豫运动受到限制。     

聚合物和小分子叠层结构有机太阳电池研究

旋涂法和真空蒸发结合制备了MEH-PPV:PCBM体异质结和CuPc/C60有机小分子叠层有机太阳电池. 测试结果表明:MEH-PPV:PCBM有源层和Ag中间层分别为50 nm和0.5 nm时,与同等厚度有源层的MEH-PPV:PCBM体异质结器件和CuPc/C60小分子器件相比,叠层器件太阳能转换效率大大提高,达到了1.86%. 关键词： 聚(2-甲氧基,5-(2-乙基-乙氧基)-对苯乙炔) 铜酞菁 叠层结构 太阳电池     

一种菁染料－聚合物薄膜的光存存储性能

用旋涂法制备了一种菁染料－聚合物薄膜，并研究了该染料－聚合物薄膜的光谱性质和光存储性能。该染料薄膜在６６０～８３０ｎｍ波段有较强的吸收和２０％以上的反射率。在最佳实验条件下，获得了５８ｄＢ的信噪比。信噪比（ＣＮＲ）、载波信号强度（Ｃ）和薄膜反射率变化（ΔＲ）的对数（ｌｇΔＲ）成正比     

一种菁染料—聚合物薄膜的光存存储性能

用旋涂法制备了一种菁染料－聚合物薄膜，并研究了该染料－聚合物薄膜的光谱性质和光存储性能，该染料薄膜在６６０～８３０ｎｍ波段有较强的吸收和２０％以上的反射率，在最佳实验条件下，获得了５８ｄＢ的信噪比，信噪比（ＣＮＲ）载波信号强度（Ｃ）和薄膜反射率变化（△Ｒ）的对数（ｌｇ△Ｒ）在正比。     

聚合物P3HT在不同退火温度下的空穴传输特性

运用交流阻抗方法系统研究了单空穴注入型器件ITO/PEDOT/P3HT/Ag（P3HT：poly（3-hexylthiophene））在多种退火温度下的电容-频率变化关系,推算出样品中相应条件下的空穴迁移率,发现退火温度对空穴迁移率有明显影响,未经过退火的样品空穴迁移率为10^-4cm²/Vs数量级,迁移率数值基本不随电场强度的改变而变化,退火后样品的空穴迁移率有明显提高,约为10^-3cm²/Vs数量级,此时,空穴迁移率 关键词： 空穴迁移率 聚合物 电容-频率特性     

高度取向的半导体聚合物薄膜的溶液浸涂法生长及其电荷传输特性研究

有效地控制有机半导体分子取向和堆积特性对实现高性能电子器件具有非常重要的意义,而发展简便高效的溶液相成膜技术是实现这一目的的重要途径.本文采用改进的溶液浸涂法,成功地成长出大面积宏观取向的半导体聚合物P(NDI2OD-T2)和PTHBDTP薄膜.偏光显微镜和极化的紫外-可见光吸收谱测量显示,薄膜中聚合物分子主链骨架沿成膜时液面下移方向择优取向.原子力显微镜观察到聚合物薄膜由纳米尺度的取向有序晶畴构成,畴的取向与分子链的取向一致.采用衬底-溶液界面处表面张力和溶剂蒸发诱导的分子自组织过程来解释浸涂法生长聚合物取向薄膜的微观机理.使用取向的P(NDI2OD-T2)薄膜制备场效应晶体管,显著地提高了电子迁移率(可达4倍),并实现高达19的迁移率各向异性度.这可归因于共轭的聚合物主链骨架择优取向引起电荷传导通路的变化.     

偶氮金属螯合物薄膜的光学常数和吸收光谱

偶氮金属螯合物薄膜是一类新型光信息存储和光学非线性材料。通过旋涂法在单晶硅上制备了三种新型偶氮染料：2-（4-甲革-2-噻唑基偶氮）-5-二乙基胺苯酚（MTADP）掺杂聚合物,MTADP的镍螯合物（Ni-MTADP）和锌螯合物（Zn-MTADP）薄膜。利用宽谱扫描全自动椭圆偏振光谱仪测定了上述薄膜的椭偏光谱,获得了三种薄膜在400—700nm波段的复折射率、复介电常量和吸收系数。两种金属螯合物薄膜的共振波长比非螯合物薄膜红移了60—70nm;光学常数和吸收系数在峰值的数值也发生了明显的变化。由于这两种螯合物具有不同的立体结构,Ni-MTADP薄膜的共振波长比Zn-MTADP有10nm的红移。     

旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用

采用旋涂法制备了氧化锆介质层薄膜,重点讨论了退火温度以及旋涂转速对薄膜性能的影响及作用机制。研究发现高温后退火一方面使得氧化锆水合物脱水形成氧化锆,另一方面促使氧化锆薄膜结晶。此外,转速较高时,其变化对薄膜厚度及粗糙度无显著影响。当转速为5 000 r/min、退火温度为300℃时,制备的绝缘层厚度具有良好的厚度均匀性,粗糙度为0.7 nm,漏电流为3.13×10^-5 A/cm²（电场强度1 MV/cm）。最终,利用ZrO₂薄膜作为栅极绝缘层,在玻璃基板上制备了铟镓锌氧化物-薄膜晶体管（IGZO-TFT）,其迁移率为6.5 cm²/（V·s）,开关比为2×10⁴。     

Stability of polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)

Polymer thin-film transistors (PTFTs) based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) semiconductor are fabricated by spin-coating process and characterized. In the experiments, solution preparation, deposition and device measurements are all performed in air for large-area applications. Hysteresis effect and gate-bias stress effect are observed for the devices at room temperature. The saturation current decreases and the threshold voltage shifts toward the negative direction upon gate-bias stress, but carrier mobility hardly changes. By using quasi-static C-V analysis for MOS capacitor structure, it can be deduced that the origin of threshold-voltage shift upon negative gate-bias stress is predominantly associated with hole trapping within the SiO₂ gate dielectric near the SiO₂/MEH-PPV interface due to hot-carrier emission.     

Influence of small-molecule material on performance of polymer solar cells based on MEH-PPV:PCBM blend

In this work,the influence of a small-molecule material,tris(8-hydroxyquinoline) aluminum (Alq 3),on bulk het-erojunction (BHJ) polymer solar cells (PSCs) is investigated in devices based on the blend of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) and [6,6]-phenyl-C 61-butyric acid methyl ester (PCBM).By dop-ing Alq 3 into MEH-PPV:PCBM solution,the number of MEH-PPV excitons can be effectively increased due to the energy transfer from Alq 3 to MEH-PPV,which probably induces the increase of photocurrent generated by excitons dissociation.However,the low carrier mobility of Alq 3 is detrimental to the efficient charge transport,thereby blocking the charge collection by the respective electrodes.The balance between photon absorption and charge transport in the active layer plays a key role in the performance of PSCs.For the case of 5 wt.% Alq 3 doping,the device performance is deteriorated rather than improved as compared with that of the undoped device.On the other hand,we adopt Alq 3 as a buffer layer instead of commonly used LiF.All the photovoltaic parameters are improved,yielding an 80% increase in power conversion efficiency (PCE) at the optimum thickness (1 nm) as compared with that of the device without any buffer layer.Even for the 5 wt.% Alq 3 doped device,the PCE has a slight enhancement compared with that of the standard device after modification with 1 nm (or 2 nm) thermally evaporated Alq 3.The performance deterioration of Alq 3-doped devices can be explained by the low solubility of Alq 3,which probably deteriorates the bicontinuous D-A network morphology;while the performance improvement of the devices with Alq 3 as a buffer layer is attributed to the increased light harvesting,as well as blocking the hole leakage from MEH-PPV to the aluminum (Al) electrode due to the lower highest occupied molecular orbital (HOMO) level of Alq 3 compared with that of MEH-PPV.     

Charge transport in low-concentration MEH-PPV conjugated polymer/fullerene composites

Charge transport was studied in composites of poly[2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene-vinylene] (MEH-PPV) conjugate polymer and low-concentration fullerenes (C₆₀) below the percolation threshold. The electron mobility showed a linear increase with the fullerene concentration, to which the hole mobility was insensitive. Our results indicate that fullerene–polymer networks provide a conduction path to the electrons, whereas the holes are transported through the polymer-only paths. The microscopic environments of the two distinct conduction paths in the composites as revealed by the electric field dependence of the mobilities are also discussed.     

MEH-PPV/ZnO纳米晶无机有机复合电致发光器件的研究

以Ⅱ一Ⅵ族无机半导体ZnO纳米颗粒为电子传输层,MEH-PPV为空穴传输层兼发光层,得到的电致发光器件比单层MEH-PPV器件的发光亮度和效率都明显提高。器件结构为ITO／MEH-PPV／ZnO／Al的电致发光光谱同单层PPV器件的光谱出现了不同,在620nm处出现了一个小的发光峰,应该是ZnO的发光。另外,双层结构器件的启亮电压由单层器件的9V降到了4V左右。由I-V曲线及发光光谱可判断出发光区域应在MEH-PPV／ZnO界面处,并且复合区域可能随着电压的变化而变化。     

Charge carrier injection and transport in polymer blend films

The steady current-voltage characteristics of single layer organic devices based on MEH-PPV and N,N′-diphenyl-N,N′-bis(4′-[N,N-bis(naphth-1-yl)-amino]-biphenyl-4-yl)-benzidine (TPTE) blend with different TPTE concentrations was investigated. The thickness dependence of the current-voltage relationship clearly demonstrates that the current at low voltage and at high voltage are all space charge limited. The current density-electric field characteristic proves the blend polymer LEDs to operate in the tunneling-controlled model. The effective hole mobility is directly determined by space charge limited current at high voltage and increases with increasing TPTE content in the blend. The EL efficiency shows concentration dependence, which is attributed to the change of the transport of holes in the blend film.     

Electrical and optical characteristics of various PPV derivatives (MEH-PPV, CzEH-PPV, OxdEH-PPV)

To investigate the electrical characteristics of polymer based light emitting diode (LED) devices, we fabricated the hole transport device (HTD) and the electron transport device (ETD). The ITO and Au with high work function were used as electrodes for the HTD, and the Al and Li:Al with low work function were used for the ETD. The active layer materials were poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-(N-carbazolyl)-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (CzEH-PPV), and poly[2-(4-tert-butylphenyl)-5-phenyl-1,3,4-oxadiazole-5(2-ethylhexoxy)-1,4-phenylene vinylene] (OxdEH-PPV). We measured the current density–applied field (J–E) characteristics of the HTD and ETD with various thickness at different temperatures. The results of the J–E curves were analyzed by using tunneling model, space charge limited conduction (SCLC) model, etc. In the SCLC model, the mobility of the hole and the electron of MEH-PPV is 10⁻⁶ and 10⁻⁸ cm²/Vs, respectively. For CzEH-PPV and OxdEH-PPV, the hole mobility is similar to the value of the electron mobility with 10⁻¹⁰ cm²/Vs. The luminescent efficiency of CzEH-PPV or OxdEH-PPV is higher than that of MEH-PPV. The results of photoconductivity of the systems qualitatively agrees with the result of the electrical measurement. We analyze that the balance of the electron and the hole mobility plays an important role for the efficiency of the LEDs.     

Solvent effects on the electrical and optical properties of composite carbon nanotube/MEH-PPV films

Optical signals were used to modulate the resistance of single-walled carbon nanotube–polymer composite films for development of optical switching devices. Films were fabricated from nanotubes dispersed in poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) solutions in either tetrahydrofuran (THF) or toluene. MEH-PPV was affected by the solvent choice, with THF causing an absorbance shift to shorter wavelengths. Composite films formed from THF dispersions showed 1–4% resistance decreases when illuminated with a green diode laser. Illumination of toluene-based films showed up to 5.4% resistance decreases, smaller than expected based on the polymer solution absorbance. Fluorescent emission from the polymer in toluene appears to inhibit charge transfer from the polymer to the nanotubes. THF films were unaffected by illumination with a red diode laser, while toluene dispersion films showed resistance decreases up to 1%. Nanotube dispersion and film formation reproducibility, evaluated for both the solvents, showed that the solvent affected film resistance and dispersion stability.     

Structural relaxation of spin-cast glassy polymer thin films as a possible factor in dewetting

Reiter [1] has recently reported a situation in which the dewetting of quasi-solid films is linked to plastic deformation - rather than viscous flow - resulting from capillary forces. Herein we propose that, in thin films of some glassy polymers - especially poly(methyl methacrylate) (PMMA) - prepared by spin-casting from solvent, structural relaxation might impart sufficient stress to cause plastic deformation. We find that PMMA films decrease in thickness by several percent, which is sufficient to create significant stress in those cases in which the film is attached to a rigid substrate. The floating technique, which can take tens of minutes, might allow most of the structural relaxation to occur prior to dewetting experiments.Received: 1 August 2003PACS: 65.40.De Thermal expansion; thermomechanical effects - 82.60.Lf Thermodynamics of solutions - 61.41. + e Polymers, elastomers, and plasticsM. Sferrazza: Current address: Département de Physique, Université Libre de Bruxelles, Boulevard du Triomphe, CP223, 1050 Bruxelles, Belgium     

基于MEH-PPV/Ir(ppy)_3聚合物电双稳器件

通过逐层旋涂的方法,利用MEH-PPV(Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]与Ir(ppy)_3(tris(2-phenylpyridine)iridium(Ⅲ))),制备活性层,实现了高性能的电双稳器件。通过改变MEHPPV的浓度,制备了不同器件并进行性能比较,发现所有器件都具有明显的电双稳特性。当MEH-PPV的浓度达到4 mg/mL时,器件的开关比可以达10~3。同时,通过测试器件的电流-循环次数研究了器件的持续稳定特性。经过10~4次的反复读写测试,器件性能依然稳定。最后,通过对器件的Ⅰ-Ⅴ曲线进行线性拟合,并结合器件的能级图,对器件的工作原理进行了研究。结果表明,MEH-PPV/Ir(ppy)_3器件的电双稳特性产生的主要原因是偶极层的形成与破坏。     

Effect of excessive pressure on the drift mobility of charge carriers in poly(diphenylene phthalide) films

The electron-hole transport in poly(diphenylene phthalide) films has been investigated. The dependence of the drift mobility of charge carriers on the excessive mechanical pressure has been studied using the time-of-flight method. It has been revealed that, with an increase in the thickness of the polymer film, the dispersive transport of charge carries gives way to the quasi-dispersive transport. In thin films in the prethreshold range (i.e., before switching of the samples to the highly conductive state under excessive pressure), the electron mobility increases and exceeds the hole mobility. The experimental results have been discussed in the framework of the model describing the transport through the channels formed by metastable electron-hole pairs.