Laser-induced desorption and etching processes on chlorinated Cu and solid CuCl surfaces |
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Authors: | W Sesselmann E E Marinero T J Chuang |
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Institution: | (1) IBM Almaden Research Center, 650 Harry Road, 95120-6099 San Jose, CA, USA |
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Abstract: | Time-resolved mass spectrometry is used to study the desorbed species due to laser-induced etching of a solid CuCl and a chlorinated Cu surface. The observed desorption threshold, mass distribution and kinetic energies of the desorbed atoms and molecules at 355 and 532 nm radiation show that the laser-induced etching process is not simply thermal evaporation. It is suggested that competing nonthermal mechanisms due to electronic excitations may be very important in laser-induced desorption and etching. These processes are different for a solid CuCl and a chlorinated Cu surface. For laser-induced etching of Cu surfaces, chlorination of Cu is essential; however, formation of stoichiometric CuCl is not necessary. Excess Cu in the surface layer is responsible for the observed different etching behavior of a chlorinated Cu and a solid CuCl surface. The effect of laser radiation on these surfaces and possible etching mechanisms are discussed based on the experimental observations. |
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Keywords: | 79 20 Ds 82 50 Et 82 65 Nz |
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