The important role of Mn in the room-temperature ferromagnetism of Mn-doped GaN films

Mn-doped GaN films (Ga_1−xMn_xN) were grown on sapphire (0 0 0 1) using Laser assisted Molecular Beam Epitaxy (LMBE). High-quality nanocrystalline Ga_1−xMn_xN films with different Mn concentration were then obtained by thermal annealing treatment for 30 min in the ammonia atmosphere. Mn ions were incorporated into the wurtzite structure of the host lattice by substituting the Ga sites with Mn³⁺ due to the thermal treatment. Mn³⁺, which is confirmed by XPS analysis, is believed to be the decisive factor in the origin of room-temperature ferromagnetism. The better room-temperature ferromagnetism is given with the higher Mn³⁺ concentration. The bound magnetic polarons (BMP) theory can be used to prove our room-temperature ferromagnetic properties. The film with the maximum concentration of Mn³⁺ presents strongest ferromagnetic signal at annealing temperature 950 °C. Higher annealing temperature (such as 1150 °C) is not proper because of the second phase Mn_xGa_y formation.     

Preparation, characterization and microwave absorption properties of electroless Ni-Co-P-coated SiC powder

Silicon carbide particles reinforced nickel-cobalt-phosphorus matrix composite coatings were prepared by two-step electroless plating process (pre-treatment of sensitizing and subsequent plating) for the application to lightweight microwave absorbers, which were characterized by scanning electron microscopy (SEM), X-ray diffraction analysis (XRD), vibrating sample magnetometer (VSM) and vector network analyzer, respectively. The results show that Ni-Co-P deposits are uniform and mixture crystalline of α-Co and Ni₃P and exhibit low-specific saturation magnetization and low coercivity. Due to the conductive and ferromagnetic behavior of the Ni-Co thin films, high dielectric constant and magnetic loss can be obtained in the microwave frequencies. The maximum microwave loss of the composite powder less than −32 dB was found at the frequency of 6.30 GHz with a thickness of 2.5 mm when the initial atomic ratio of Ni-Co in the plating bath is 1.5.     

Mechanical properties of sol-gel derived lead zirconate titanate thin films by nanoindentation

Lead zirconate titanate (PZT) thin films are deposited on platinized silicon substrate by sol-gel process. The crystal structure and surface morphology of PZT thin films are characterized by X-ray diffraction and atomic force microscopy. Depth-sensing nanoindentation system is used to measure mechanical characteristics of PZT thin films. X-ray diffraction analyses confirm the single-phase perovskite structures of all PZT thin films. Nanoindentation measurements reveal that the indentation modulus and hardness of PZT thin films are related with the grain size and crystalline orientation. The increases of the indentation modulus and hardness with grain size are observed, indicating the reverse Hall-Petch effect. Furthermore, the indentation modulus of (1 1 1)-oriented PZT thin film is higher than those of (1 0 0)- and random-oriented films. The consistency between experimental data and numerical results of the effective indentation moduli for fiber-textured PZT thin films using Voigt-Reuss-Hill model is obtained.     

RHEED intensity oscillation of C60 growth on GaAs substrates

Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C₆₀ layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C₆₀ layers, suggesting that C₆₀ layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C₆₀ layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C₆₀ molecules. This phenomenon is explained by the model that C₆₀ absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.     

Thickness Dependence of Resistivity and Optical Reflectance of ITO Films

Indium-tin-oxide （ITO） films deposited on crystalline silicon wafer and Corning glass are prepared by directcurrent magnetron sputtering method at room temperature with various thicknesses. The thickness dependences of structure, resistance and optical refectance of ITO films are characterized. The results show that when the film thickness is less than 40 nm, the resistivity and optical reflectance of the ITO film changes remarkably with thickness. The optoelectrical properties trend to stabilize when the thickness is over 55 nm. The GXRD result implies that the ITO film begins to crystallize if only the thickness is large enough.     

Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy

We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well structure tensile AlInGaAs are used as barriers to partially compensate for the significant compressive strain in the wells, the strain compensation effects are confirmed by x-ray measurement. The photoluminescence spectra of the sample are dominated by the excitonic recombination peak in the whole temperature range. The thermal quenching, peak energy shift and line-width broadening of the PL spectra are analysed in detail, the mechanisms are discussed.     

Wavelet Cross-Spectrum Analysis of Multi-Scale Disturbance Instability and Transition on Sharp Cone Hypersonic Boundary Layer

Experimental measurement of hypersonic boundary layer stability and transition on a sharp cone with a half angle of 5° is carried out at free-coming stream Mach number 6 in a hypersonic wind tunnel. Mean andfluctuation surface-thermal-flux characteristics of the hypersonic boundary layer flow are measured by Pt-thin-film thermocouple temperature sensors installed at 28 stations on the cone surface along longitudinal direction. At hypersonic speeds, the dominant flow instabilities demonstrate that the growth rate of the second mode tends to exceed that of the low-frequency mode. Wavelet-based cross-spectrum technique is introduced to obtain the multi-scale cross-spectral characteristics of the fluctuating signals in thefrequency range of the second mode. Nonlinear interactions both of the second mode disturbance and the first mode disturbance are demonstrated to be dominant instabilities in the initial stage of laminar-turbulence transition for hypersonic shear flow.     

Synthesis and Structural Study of Sr2CuO3+δ Superconductor under High Pressure

A single-phase Sr₂CuO_3+δ superconductor is synthesized under high temperature and high pressure, in which oxygen atoms only partially occupy the apical sites next to the CuO₂ planes and act as hole-dopants. Thesuperconducting transition temperature with T_c^max=75K is achieved in the material. Structure analysis from x-ray powder diffraction data show that this material crystallizes into a K₂NiF₄ structure with tetragonal unit cell of a=3.795(3)AAand c= 12.507(1)AA. Energy-dispersive synchrotron x-ray-diffraction studies at ambient are performed on powder samples of Sr₂CuO_3+δ in a diamond-anvil cell at pressure up to 35GPa. Anisotropic compressibility is found. Pressure-induced isostructural phase transition might exist as revealed by the discontinuous change of crystal cell volume V withpressure.     

Phase Transition and High Piezoactivity of Sr Doped Lead-Free （Na0.53K0.422Li0.048） （Nb0.89Sb0.06Wa0.05）O3 Ceramics

Lead-free piezoelectric ceramics （Na0.53K0.422Li0.048 ） （Nb0.89Sb0.06 Ta0.05 ）03 （NKLNST） ＋ x tool SrCO3 are prepared by conventional solid state sintering method. The specimens with pure perovskite structure show tetragonal phase at x 〈 0.01, and become pseudo-cubic phase at x 〉 0.02. A lattice parameter discontinuity is found in the specimens with 0.004 〈 x 〈 0.0075, along with a great improvement in piezoactivity. The 0.004 mol SrCO3 added NKLNST ceramics possesses outstanding performances of kp = 0.53, kt = 0.26, and d33=309 pC/N. Moreover, the Sr^2＋ modification inhibits the gra/n growth, decreases the Curie temperature, and induces a diffuse phase transition.     

Growth and characterization of two new NLO materials from the amino acid family: l-Histidine nitrate and l-Cysteine tartrate monohydrate

Single crystals of organic nonlinear optical (NLO) materials l-Histidine nitrate (C₆H₁₀N₃O₂)⁺ · (NO₃)⁻ and l-Cysteine tartrate monohydrate (C₃H₈NO₂S)⁺ · (C₄H₅O₆)⁻ · H₂O were grown by submerged seed solution method. Characterization of the crystals was made using single crystal X-ray diffraction. Fourier transform infrared (FTIR) spectroscopic studies, optical behaviour such as UV-visible-NIR absorption spectra and second harmonic generation (SHG) conversion efficiency were investigated to explore the NLO characteristics of the above materials. Microhardness measurements and dielectric studies of the compounds were also carried out.