High-speed energy efficient selective removal of large area copper layer by laser induced delamination

An indirect laser-induced method for selective removal of large copper areas from a printed circuit board is theoretically and experimentally investigated. The results show that the threshold condition for the process involves phase transition of the epoxy-based substrate resin. Optimal parameters for maximizing process speed are found and discussed.     

Thin layer laser bonding using spin-on-glass materials

We developed and characterized a new laser bonding process with a nano adhesive layer for transparent materials. The adhesive is spin-coated on a glass substrate and cured locally with a focused laser beam. The minimum viscosity of the adhesive is very low, so that a thin layer only a few hundred nanometers thick can be coated on a cover substrate. Laser irradiation from a Nd:YAG laser system with a wavelength of 1064 nm is employed as the curing source for the localized nano layer bonding process. The measured thickness of the bonding layer is in the range of 400 nm to 3 μm. This process can be applied to the nano or micro bonding of various transparent systems such as flat panel displays, biochips, and heat-sensitive microelectronics. We present experimental results and discuss the process characteristics.     

Formation of TiN-Ir particle films using pulsed-laser deposition and their electrolytic properties in producing hypochlorous acid

Using sintered TiN and TiN-Ir (Ir contents: 5.9-14.2 at.%) targets, pulsed-laser deposition (PLD) was carried out to produce thin films composed of nanoparticles and particulates in the presence of nitrogen gas. The size (2-100 nm) of the produced crystalline TiN nanoparticles increased as nitrogen pressure was increased in the range from 1.33 to 1.33 × 10² Pa. At a pressure of 1.33 × 10³ Pa, amorphous TiN nanoparticles combined in the form of chains. Large Ir particulates with diameters of up to 2 μm were particularly prominent in TiN-Ir films. Size distributions of the Ir particulates were dependent on ablation laser wavelength; that is, the diameter decreased at laser wavelength shortened. The TiN-Ir films with different Ir contents and morphologies on Ti substrates were evaluated as electrolysis electrodes for water disinfection. The highest current efficiency was 0.45%, which is comparable to that of conventional Ti-Pt electrodes, for a chloride-ion concentration of 9 mg dm⁻³.     

Number-Phase Quantization and Deriving Energy-Level Gap of Two LC Circuits with Mutual-Inductance

For two LC circuits with mutual-inductance, we introduce a new quantization scheme in the context of number- phase quantization through the standard Lagrangian formalism. The commutative relation between the charge operator and the magnetic flux operator is derived. Then we use the Heisenberg equation of motion to obtain the current and voltage equation across the inductance and capacity. The results clearly show how the current and voltage in a single LC circuit are affected by the circuit parameters and inductance coupling coettlcient. In addition, adopting invariant eigen-operator method the energy-level gap of the dynamic Hamiltonian which describes two LC circuits with mutual-inductance is obtained.     

Sinh-Gordon boundary TBA and boundary Liouville reflection amplitude

The ground state energy of the sinh-Gordon model defined on the strip is studied using the boundary thermodynamic Bethe ansatz equation. Its ultraviolet (small width of the strip) behavior is compared with the one obtained from the boundary Liouville reflection amplitude. The results are in perfect agreement in the allowable range of the parameters and provide convincing support for both approaches. We also describe how the ultraviolet limit of the effective central charge can exceed one in the parameter range when the Liouville zero mode forms a bound state.     

Laser melting of GaAs covered with thin metal layers

GaAs melting simulations with a pulsed ruby laser are reported. The presence of a thin metal layer deposited on the GaAs surface gives rise to a reduction in the melting threshold and to an increase of melted depths when compared with nude GaAs surfaces. Melting thresholds around 0.3 J/cm² for nude GaAs surface and slightly below 0.25 J/cm² for GaAs covered with a 120 Å tin layer are predicted in reasonable agreement with experimental results.     

Zero-point momentum in complex media

In this work we apply field regularization techniques to formulate a number of new phenomena related to momentum induced by electromagnetic zero-point fluctuations. We discuss the zero-point momentum associated with magneto-electric media, with moving media, and with magneto-chiral media.     

Hard X-ray generation from microdroplets in intense laser fields

Microdroplets of 15-μm diameter are subjected to ultra-short laser pulses of intensities up to 10¹⁵Wcm⁻² to produce hot dense plasma. The hot electrons produced in the microdroplet plasma result in efficient generation of hard X-rays in the range 50–150keV at an irradiance as low as 8×10¹⁴Wcm⁻². The X-ray source efficiency is estimated to be about 2 ×10⁻⁷%. A prepulse that is about 11ns ahead of the main pulse strongly influences the droplet plasma and the resulting X-ray emission. For a similar laser prepulse and intensity, no measurable hard X-ray emission is observed when the laser is focused on a solid target of similar composition and this indicates that liquid droplet targets are best suited for hard X-ray generation in laser–plasma interactions.     

Measurements of residual stress in semi-insulating GaAs by Cr-related luminescence lines

We have measured systematically the Cr-related zero-phonon lines in the 0.839 eV region in a series of plastically-bent semi-insulating GaAs:Cr with compressive or tensile stress along various bending axes. As a result, it has been found that the residual stress in semi-insulating GaAs:Cr wafers can be sensitively characterized from a splitting and energy shift of the 0.839 eV Cr-related luminescence lines in the low-temperature photoluminescence spectra. Furthermore, we have applied this method to the characterization of the interface stress of OMVPE-grown ZnSe/GaAs:Cr heterostructure and found that anomalous stress exists at the ZnSe/GaAs interface, which is inconsistent with stress predicted by the lattice mismatch of the heterojunctions.     

Monte Carlo simulation of spin-wave excitation for the magnetic films with structure and interaction fluctuations

Monte Carlo simulation studies are performed to examine influence of structure and interaction fluctuations on magnetic properties of a ferromagnetic system modelled with a Heisenberg Hamiltonian. It is found that the spontaneous magnetization at low temperature for the multilayered films decreases with temperature in a Bloch law of spin-wave excitations. Both Bloch coefficient B and exponent b vary evidently because of a strong surface and size effect in the finite magnetic films with free boundaries. For the disordered bulk FCC magnet with periodic boundary, the Bloch T^3/2 law is followed at low temperature and B is greatly influenced by the structure and interaction fluctuations. At the same time, Bloch coefficient B of the amorphous magnet with the coordination and interaction fluctuations has been derived. The simulated results are in good agreement with the theoretical predictions of spin-wave excitation, and explain the experimental facts well.