Design of 45-degree Linearly Polarized Substrate Integrated Waveguide-fed Slot Array Antennas

This paper presents a method of designing substrate integrated waveguide-fed (SIW-fed) slot array antennas. The design theory is based on the circuit model of slot and via as well as the reflection canceling. To prove the feasibility of this method, a 10-element K-band SIW-fed 45-degree linearly polarized slot array antenna with uniform power distribution is designed. By full-wave simulation, the antenna has a good impedance bandwidth of 7.5% and uniform power distribution. Besides, a maximum gain of 15.3dBi is obtained in the broadside and the cross polarization is suppressed below -23.5dB in the boresight. This type of SIW-fed slot array antennas can be a good candidate for microwave and millimeter-wave applications, especially for auto-motive collision-avoidance radar systems.     

Athermal silicon arrayed waveguide grating with polymer-filled slot structure

In this paper, an athermal silicon arrayed waveguide grating (AWG) with the assistance of a polymer-filled slot structure is proposed. Arrayed slot waveguides were used to replace arrayed silicon photonic wires (SPWs). By carefully controlling the temperature dependence of the effective index of the polymer-filled slot waveguides, the athermal silicon AWG is realized. Analysis shows that the center wavelength shift of the AWG can be down to 0.14 pm/°C.     

Electro-optic polymer assisted optical switch based on silicon slot structure

One kind of electro-optic polymer assisted Mach-Zehnder optical switch based on silicon slot structure is presented in this paper. The interference arms of the switch are slot structures instead of regular single-mode waveguides. By filling electro-optic material in the void slot of the arms, direct electro-optic modulation can be introduced. Theoretical model and detailed analysis are given in this paper. The length-independent product V_πL is about 74 mV cm when slot width is 100 nm, and 37 mV cm when slot width is 50 nm, when the polymer with a electro-optical coefficient of γ₃₃ = 130 pm/V is assisted. An ultralow energy consumption of only 37 fJ/bit is achievable, and the turn-on time of the switch is less than 1.5 ps.     

硅-有机物材料混合电光调制器的优化设计

设计了一种基于绝缘上层硅的硅-有机物材料混合马赫-曾德干涉型高速电光调制器.利用光束传播法对顶层硅为220nm的绝缘上层硅基片上的3dB分束器/合束器的结构参数进行模拟,优化后附加损耗仅为0.106dB.为提高模式转换效率,在条形波导和slot波导之间设计了模式转换器,光耦合效率高达98.8%,实现了光模式高效转化.利用时域有限差分法模拟了slot波导平板区掺杂浓度对波导内光学损耗的影响,在几乎不产生光学损耗的情况下,得到平板区轻掺杂浓度为71017/cm3,调制器设计总损耗为0.493dB.利用薄膜模式匹配法对slot波导结构进行仿真分析,考虑slot区等效电容及平板区等效电阻对带宽的影响,优化后得到slot波导结构的限制因子为0.199.采用slot波导与强非线性有机材料LXM1结合的绝缘上层硅平台实现了强普克尔效应,得到电光调制器半波电压长度积为1.544V·mm,电学响应3dB带宽为137GHz.     

缝隙八木纳米天线设计及宽波段吸收特性

针对传统光伏电池能量收集易受环境与光照时间限制的问题,本文设计了一种用于太阳能收集的缝隙八木纳米天线单元及阵列.采用时域有限差分法分析缝隙间距对纳米天线远场方向性和近场分布的影响,并研究缝隙八木纳米天线阵列的吸收特性及不同缝隙间距对阵列天线吸收率的影响.研究远场方向性发现,当缝隙间距增加到一定距离时,天线方向图出现多个副瓣并产生新的辐射模式;通过对近场分析表明,新辐射模式的产生来源于高阶模式的局域表面等离激元.天线阵列吸收率的仿真结果表明:在400~1 500nm波段,随着缝隙间距的增加,缝隙八木纳米天线阵列吸收率呈上升趋势,当缝隙间距等于80nm时,在400~660nm、760~1 300nm两个波段内吸收率较高,吸收峰值最大可以达到98%;以吸收率大于50%为基准,当缝隙间距等于80nm时,其吸收波段最宽.     

Improvement of optical sensing performances of a double-slot-waveguide-based ring resonator sensor on silicon-on-insulator platform

We demonstrate a label-free photonic biosensor with double slots based on micro-ring resonator. The footprint is less than 25 μm × 15 μm. Finite-difference time-domain (FDTD) method is used to analyze the influence of several key parameters on the performance of the double-slots micro-ring resonators. An asymmetric structure is considered for the ring waveguide in order to improve the sensor's bending efficiency. Our numerical analysis shows that the sensitivity of double-slot micro-ring resonator sensor with the radius of 5 μm reaches a value of 708 nm/RIU. The quality factor of 580 and the free spectral range (FSR) of 33 nm are achieved.     

High-speed compact silicon digital optical switch with slot structure

A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35 dB and the insertion loss of 0.7 dB is obtained, the switching speed is less than 1 ps, and the whole device length can be shortened to 616 μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.     

Active manipulation of EM fields in open waveguides

The central question addressed in this paper is whether we can introduce an antenna array into a circular cylindrical waveguide to accurately control or determine the local field around the array with vanishingly small reflection from the boundary of the waveguide. We ask this question since we perceive the answer to be important to the applied community through its relevance for applications to electromagnetic shielding or slot antennas. We make use of the results presented in Onofrei (2014) for the scalar Helmholtz equation and show, by using the Debye representation in waveguides, how they apply to the current EM waveguide model. We prove the existence of a class of solutions and include a feasibility discussion for the antenna synthesis problem together with relevant simulations.     

Dispersion characteristics of SOI-based slot optical waveguides

The invention of the slot waveguide had enabled a number of interesting novel linear or nonlinear optical applications by guiding light in nanometers-wide low index slots guarded by high-index slabs. As one of its key characteristics, the low modal index for this kind of waveguides has been demonstrated by many studies. However, their higher order dispersion properties have not been thoroughly investigated yet, while the growing size and complexity of these devices and their potential nonlinear optical applications involving short optical pulses demand further understanding in their dispersion behavior. We here carry out a numerical study on the higher order dispersion characteristics of the SOI-based slot structures around the 1550 nm wavelength. Our results show that they could have significantly different second order dispersion properties in contrast to the traditional channel SOI waveguides. Their potentially large normal dispersion could have an impact on various nonlinear or linear applications. The relationship between the dispersion performance and the waveguide design is also investigated, and the results could show further venues to optimize or control the dispersion properties of such waveguides.     

硅狭缝光波导的色散特性及其色散补偿应用的研究

对硅狭缝光波导色散特性进行了数值研究.研究结果表明,在1.55μm工作波长附近,硅狭缝光波导色散随结构参量的改变而改变,一般在-1000ps/(nm·km)以下,最大可达到-6700ps/(nm·km)左右,同时其相对色散斜率可小于0.009nm-1.因此,选取合适的结构参量,硅狭缝光波导可被用于补偿高速宽带光通信链路的残余色散,且比现有的色散补偿光纤具有一定的优势.