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1.
We report a 1.8 μm two-section distributed Bragg reflector laser using butt-jointed In Ga As P bulk material as the waveguide core layer. The threshold current is 17 m A and the output power is 8 m W on average. The threshold current, output power, and emitting wavelength dependences on temperature are measured. The obtained wavelength tuning range is 10 nm. This device has potential applications in simultaneous multiple-gas detection. 相似文献
2.
InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAsmultiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy(MOVPE). The results of double crystal X-ray diffraction (DCXRD) revealed that strain relief had beenpartly accommodated by the misfit dislocation formation in the strained MQW material. It led to thatthe full width half maximums (FWHMs) of superlattice satellite peaks are broader than those of SCMQWstructures, and there was no detectable room temperature photoluminecence(RT-PL)for the strained 相似文献
3.
采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术,得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱,加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA),输出功率高(100mA时大于14mW).从10—40℃,1.74μm激光器的特征温度T0=57K,和1.55μm InGaAsP分布反馈激光器的特征温度相当.
关键词:
MOCVD
InGaAs/InGaAsP
应变量子阱
分布反馈激光器 相似文献
4.
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD 下载免费PDF全文
Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100)
substrates by using metal-organic chemical vapour deposition (MOCVD). An
abnormal temperature dependence of bimodal size distribution of InAs quantum
dots is found. As the temperature increases, the density of the small dots
grows larger while the density of the large dots turns smaller, which is
contrary to the evolution of QDs on exact GaAs (100) substrates. This trend
is explained by taking into account the presence of multiatomic steps on the
substrates. The optical properties of InAs QDs on vicinal GaAs(100)
substrates are also studied by photoluminescence (PL) . It is found that
dots on a vicinal substrate have a longer emission wavelength, a narrower PL
line width and a much larger PL intensity. 相似文献
5.
6.
Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing 下载免费PDF全文
We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selectivearea-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the Q WI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of-5 V. 相似文献
7.
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 下载免费PDF全文
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm^2 and a slope efficiency of 0.02 W/A. The 1542nm laser output exits mainly from the Si waveguide. 相似文献
8.
A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20nm at 2.5 Gbit/s with a low input optical power of about 20mW. 相似文献
9.
Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer 下载免费PDF全文
In the last two decades, m-v compound semi- conductor materials grown on elemental semiconduc- tor substrates have attracted much attention due to their potential applications in high-efficiency so- lar cells, photodetectors, quantum-dot (QD) lasers, and metal-oxide-semiconductor field-effect transistors (MOSFETs). Due to their extremely high electron mobility, III-V semiconductors such as GaAs, InGaAs and InAs are believed to be chan- nel materials for future complementary metal-oxide- semiconductor (CMOS) technology.CMOS tran- sistors on Ge substrates with high mobility In- GaAs/Ge channels have already been fabricated by using a wafer bonding technique, which is a promis- ing step for such a device on Si. 相似文献
10.
Using non-identical quantum wells as the active material, a new distributed-feedback laser is fabricated with period varied Bragg grating. The full width at half maximum of I 15 nm is observed in the amplified spontaneous emission spectrum of this material, which is flatter and wider than that of the identical quantum wells. Two wavelengths of 1.51 μm and 1.53 μm are realized under different work conditions. The side-mode suppression ratios of both wavelengths reach 40 dB. This device can be used as the light source of coarse wavelength division multiplexer communication systems. 相似文献