Quantum Watermark Algorithm Based on Maximum Pixel Difference and Tent Map

International Journal of Theoretical Physics - A new quantum watermark algorithm is presented by combining maximum pixel difference partitioning with the least significant bit substitution...     

Study of top and bottom contact resistance in one organic field-effect transistor

This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.     

γ radiation caused graphene defects and increased carrier density

We report on a micro-Raman investigation of inducing defects in mono-layer, bi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D' bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.     

Fabrication of a 256-bits organic memory by soft x-ray lithography

This paper reports a procedure of soft x-ray lithography for the fabrication of organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to lithograph positive resist, polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250~nm.     

Entanglement entropy of an annulus in holographic thermalization

The thermalization process of the holographic entanglement entropy(HEE)of an annular domain is investigated in the Vaidya-AdS geometry.We determine numerically the Hubeny-Rangamani-Takayanagi(HRT)surface,which may be a hemi-torus or two disks,depending on the ratio of the inner radius to the outer radius of the annulus.More importantly,for some fixed ratio of the two radii,the annulus undergoes a phase transition,or a double phase transition,during thermalization from a hemi-torus to a two-disk configuration,or vice versa.The occurrence of various phase transitions is determined by the ratio of the two radii of the annulus.The rate of entanglement growth is also investigated during the thermal quench.The local maximal rate of entanglement growth occurs in the region with a double phase transition.Finally,if the quench process is sufficiently slow,which may be controlled by the thickness of the null shell,the region with a double phase transition vanishes.     

Top contact organic field effect transistors fabricated using a photolithographic process

This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho-tolithographic process.The semiconductor layer is protected by a passivation layer.Through photolithographic and etching processes,parts of the passivation layer are etched off to form source/drain electrode patterns.Combined with conventional evaporation and lift-off techniques,organic field effect transistors with a top contact are fabricated suc-cessfully,whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.