| Fabrication of a 256-bits organic memory by soft x-ray lithography |
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| 作者姓名： | 刘兴华 鲁闻生 姬濯宇 涂德钰 朱效立 谢常青 刘明 |
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| 作者单位： | Microfabrication and Nanotechnology Lab, Institute of
Microelectronics, Chinese Academy of Sciences, Beijing
100029, China;Key Laboratory of Colloid and Interface Science, Center of Molecular
Sciences, Institute of Chemistry, Chinese Academy of Sciences,
Beijing 100080, China;Microfabrication and Nanotechnology Lab, Institute of
Microelectronics, Chinese Academy of Sciences, Beijing
100029, China;Microfabrication and Nanotechnology Lab, Institute of
Microelectronics, Chinese Academy of Sciences, Beijing
100029, China;Microfabrication and Nanotechnology Lab, Institute of
Microelectronics, Chinese Academy of Sciences, Beijing
100029, China;Microfabrication and Nanotechnology Lab, Institute of
Microelectronics, Chinese Academy of Sciences, Beijing
100029, China;Microfabrication and Nanotechnology Lab, Institute of
Microelectronics, Chinese Academy of Sciences, Beijing
100029, China |
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| 基金项目： | Project supported by the State Key
Development Program for Basic Research of China (Grant
No.~2006CB806204), National Natural Science Foundation of China
(Grant Nos.~60825403, 90607022, 60676001 and 60676008) and
Synchrotron Radiation Fund of Innovation Project of Ministry of
Education of China (Grant No.~20070156S). |
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| 摘 要： | This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure.Electron beam lithography is employed to fabricate the mask for soft x-ray lithography,with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film.Then Au is electroplated on the polyimide film.Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer.The 256-bits organic memory is achieved with the critical dimension of 250 nm.
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| 关 键 词： | molecular memory crossbar array soft x-ray lithography electron beam lithography |
| 收稿时间： | 2009-05-13 |
Fabrication of a 256-bits organic memory by soft x-ray lithography |
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| Liu Xing-Hu,Lu Wen-Sheng,Ji Zhuo-Yu,Tu De-Yu,Zhu Xiao-Li,Xie Chang-Qing and Liu Ming.Fabrication of a 256-bits organic memory by soft x-ray lithography[J].Chinese Physics B,2010,19(5):57204-057204. |
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| Authors: | Liu Xing-Hu Lu Wen-Sheng Ji Zhuo-Yu Tu De-Yu Zhu Xiao-Li Xie Chang-Qing and Liu Ming |
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| Institution: | Key Laboratory of Colloid and Interface Science, Center of Molecular
Sciences, Institute of Chemistry, Chinese Academy of Sciences,
Beijing 100080, China; Microfabrication and Nanotechnology Lab, Institute of
Microelectronics, Chinese Academy of Sciences, Beijing
100029, China |
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| Abstract: | This paper reports a procedure of soft x-ray lithography
for the fabrication of organic crossbar structure. Electron beam
lithography is employed to fabricate the mask for soft x-ray
lithography, with direct writing technology to lithograph positive
resist, polymethyl methacrylate on the polyimide film. Then Au is
electroplated on the polyimide film. Hard contact mode exposure is
used in x-ray lithography to transfer the graph from the mask to the
wafer. The 256-bits organic memory is achieved with the critical
dimension of 250~nm. |
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| Keywords: | molecular memory crossbar array soft x-ray lithography electron beam lithography |
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