PbTe的高温高压合成

 以高温高压为手段，在4～5GPa压力和700～1 200 K温度条件下，成功地合成出了PbTe。对合成样品进行了X射线测试分析，结果表明，合成的PbTe样品是具有NaCl结构的多晶，而PbTe的取向随着合成压力的升高发生变化。扫描电镜分析结果显示：高压合成的PbTe样品，其晶粒有了明显的取向；电阻率比常压样品低1～2个数量级，并随合成压力的升高而降低；热导率也同时低于常压合成的PbTe样品。以上结果说明，高压合成方法是改善材料性能的重要手段。     

Raman and X-Ray Investigation of Pyrope Garnet （Mg0.76Fe0.14Ca0.10）3Al2Si3O12 under High Pressure

The compressional behavlour of natural pyrope garnet is investigated by using angle-dlspersive synchrotron radiation x-ray diffraction and Raman spectroscopy in a diamond anvil cell at room temperature. The pressureinduced phase transition does not occur under given pressure. The equation of state of pyrope garnet is determined under pressure up to 25.3 GPa. The bulk modulus KTO is 199 GPa, with its first pressure derivative K′TO fixed to 4. The Raman spectra of pyrope garnet are studied. A new Raman peak nearly at 743 cm^-1 is observed in a bending vibration of the SiO4 tetrahedra frequency range at pressure of about 28 GPa. We suggest that the new Raman peak results from the lattice distortion of the SiO4 tetrahedra. All the Raman frequencies continuously increase with the increasing pressure. The average pressure derivative of the high frequency modes （650-1000 cm^-1） is larger than that of the low frequency （smaller than 650 cm^-1）. Based on these data, the mode Grǖneisen parameters for pyrope are obtained.     

Structural Transition of Gd2O3：Eu Induced by High Pressure

The structural transition of bulk and uano-size Gd2O3：Eu are studied by high pressure energy disperse x-ray diffraction （XRD） and high pressure photoluminescence. Our results show that in spite of different size of Gd2O3 particles, the cubic structure turns into a possible hexagonal one above 13.4 GPa. When the pressure is released, the sample reverses to the monoclinic structure. No cubic structure presents in the released samples. That is to say, the compression and relaxation of the sample leads to the cubic Gd2O3：Eu then turns into the monoclinic one.     

High-Pressure and High-Temperature Behaviour of Gallium Oxide

High-temperature and high-pressure behaviours of β-Ga2O3 powder are studied by energy-dispersive x-ray diffrac- tion in a diamond anvil cell （DAC）. It is found that the phase transition from the monoclinic β-Ga2O3 to the trigonal α-Ga2O3 occurs at around 19.2 GPa under cold compression. By heating the powder to 2000 K at 30 GPa, we confirm that α-Ga2O3 is the most stable structure at the high pressure. Furthermore, the structural transition from β-Ga2O3 to α-Ga2O3 is irreversible. After laser heating, the recrystallized Ga2O3 has a preferable （012） orientation. This interesting behaviour is also discussed.     

单分散性CdSe纳米晶的合成——成核及其生长过程

 在氩气保护下,用三辛基亚磷酸和油酸分别作为Se和Cd的配位体,在260～300 ℃的十八烯溶液中合成了尺寸可控的CdSe纳米晶。该纳米晶不用进行进一步的提纯和尺寸分离就具有单分散性,其量子尺寸限域效应非常明显——吸收光谱的第一吸收峰峰位随着纳米晶的长大而发生红移;该纳米晶质量很高,具有很强的发光能力,其发射光谱对称的形状和合理的Stokes频移（13 nm）显示,该纳米晶的发光完全出自带隙,没有来自缺陷的发光。此外,实验结果表明,通过改变三辛基亚磷酸的浓度可以调节成核和生长的快慢,从而可以在不同的反应时间得到不同尺寸的单分散性CdSe纳米晶。