CdSe纳米晶带隙随温度变化的研究

根据带隙与吸收光谱的第一吸收峰峰位之间存在的关系,测量了粒子尺寸分别为4.0 nm和2.5 nm的CdSe纳米晶在不同温度下的吸收光谱,找出了吸收光谱第一吸收峰峰位随温度的变化关系,总结出了CdSe纳米晶的带隙随温度的变化关系.结果表明：CdSe纳米晶材料的发光器件的发光颜色取决于它的带隙.     

CdSe纳米晶的制备条件对发光特性的影响

以巯基乙酸为稳定剂,在水相中制备了CdSe纳米晶水溶胶,并用X射线光电子能谱和透射电子显微镜对其进行了表征,证明了CdSe纳米晶的形成。研究了在不同反应时间所制备的CdSe纳米晶的XRD谱以及吸收光谱和发射光谱的变化情况,并且还研究了不同反应物配比情况下的发射光谱的变化,结果表明改变CdSe纳米晶的制备条件,将会对CdSe纳米晶的发光特性有显著的影响。     

基于CdSe纳米晶发光器件的电致发光特性的研究

以巯基乙酸为稳定剂,在水溶液中制备了硒化镉(CdSe)纳米晶。用X射线光电子能谱(XPS)及其在水溶液中的紫外可见吸收光谱对其进行了表征。又以CdSe为发光材料制备了两种结构的电致发光器件,并对它们的光致发光和电致发光特性进行了研究。在两个器件的电致发光中都得到了CdSe纳米晶的发光,说明CdSe纳米晶是主要的发光中心而聚乙烯咔唑(PVK)只是空穴注入和传输的媒介。在电致发光光谱中还出现了一个不同于CdSe纳米晶和PVK的发光峰值,它是CdSe/BCP(2,9-二甲基-4,7-二苯基-1,10-菲咯啉)界面处的电致发光激基复合物的发光。     

单核/双壳结构CdSe/CdS/ZnS纳米晶的合成与发光性质

以巯基乙酸为稳定剂,在水溶液中合成了单核/双壳结构的CdSe/CdS/ZnS纳米晶。在内核CdSe和外壳ZnS之间的内壳CdS作为晶格匹配调节层,能够很好的改善核/壳界面处的性能,而且,最外层ZnS能够最大程度地使激子受限。用TEM和XPS对纳米晶进行了表征,并且用光致发光光谱和吸收光谱对不同核壳结构的纳米晶的发光性能进行了比较,结果表明单核/双壳结构的纳米晶具有更加优异的发光特性。     

氨基酸稳定的CdSe纳米晶对溶菌酶进行荧光标记

利用氨基酸中惟一带有巯基的L-半胱氨酸盐酸盐(L-Cys)作为稳定剂在水相体系中合成CdSe纳米晶,通过表面包覆的L-Cys与生物试剂溶菌酶进行结合,实现CdSe纳米晶对溶菌酶的荧光标记.利用TEM、荧光光谱仪及荧光显微镜等多种手段对样品的结构、形貌及光学性能进行表征.试验结果表明,利用L-Cys为稳定剂合成的CdSe纳米晶具有较强的生物活性,L-Cys本身所带的氨基和羧基可以和多种生物试剂通过不同途径进行结合.对溶菌酶(Lys)标记前后,CdSe纳米晶的发射光谱的峰位发生微小红移,大约为2nm,半峰全宽基本保持不变,在40~50nm之间,荧光强度随所标记的Lys浓度的不同均发生明显增强.所有特性均表明实验所合成的CdSe纳米晶在生物标记方面具有很好的实用价值.     

用巯基乙酸作稳定剂制备CdSe纳米晶的光学性质

以巯基乙酸为稳定剂制备了CdSe纳米晶，通过尺寸选择沉淀得到2nm到3nm之间不同尺寸的纳米晶，利用室温光吸收，光致发光（PL）和光致发光激发（PLE）谱来研究了CdSe纳米团簇的光学性质。紫外－可见吸收谱给了具有清晰激光特征的尖锐吸收边，这表明样品的尺寸分布很窄。光致发光研究表明，样品有两个发射带，一个具有较高能量位于吸收边，来自电子－空穴对从最低激发态能级弛豫后的辐射复合，另一个低能发射带归属于基质与纳米晶界面存在的俘获中心。PLE谱中有2个吸收带，分别是S－S和P－P跃迁。最后还给出了不同激发能量下的发光特性。     

CdSe:Nd纳米晶及CdSe:Nd@SiO2核壳结构的合成及发光性能

利用有机相法合成Nd³⁺掺杂CdSe纳米晶（CdSe∶Nd）,通过X射线粉末衍射（XRD）、透射电镜（TEM）、紫外吸收光光谱及荧光光谱表征,证明Nd³⁺已经成功掺入到CdSe的晶格中。与纯CdSe纳米晶相比,CdSe∶Nd纳米晶的结构仍为立方晶型,且形貌近似球形,均匀分散,粒径约为2~4 nm。紫外吸收峰和荧光发射峰都发生红移,而且掺杂后的CdSe∶Nd纳米晶量子产率也提高,这可能是由于掺杂Nd³⁺引入了新的杂质能级,带隙减小。为了实现CdSe∶Nd纳米晶的可加工性和功能性,通过微乳法合成SiO₂壳包覆的CdSe∶Nd纳米球（CdSe∶Nd@SiO₂纳米球）,CdSe∶Nd@SiO₂纳米球呈均匀球形,直径约为100~115 nm,并且包壳后的CdSe∶Nd@SiO₂纳米球发射峰（581 nm）与CdSe∶Nd纳米晶（598 nm）相比,发光强度提高且发射峰蓝移,蓝移约为17 nm,可能是因为SiO₂壳可以减少纳米晶表面的非辐射跃迁以及改善表面缺陷导致的。     

CdSe/CdS核/壳型纳米晶的光谱特性

以巯基乙酸为稳定剂制备了CdSe/CdS核／壳型纳米晶。用光吸收谱（Abs)、光致发光谱（PL）及光致发光激发谱（PLE）研究了CdS壳层对CdSe纳米晶电子结构，从而对其吸收和发光性能的影响。根据PL和PLE的结果以及带边激子精细结构的计算结果，我们用尺寸很小的纳米晶中所形成的基激缔合物解释了PL光谱与吸收边之间较大的Stokes位移。     

溅射气氛和退火方式对硅纳米晶的形成及发光特性的影响

利用磁控溅射技术溅射硅靶,通过调节溅射气氛在硅衬底上生长了SiO/SiO₂超晶格,热退火处理后超晶格中的SiO发生相分离得到硅纳米晶。通过比较不同退火方式对于硅纳米晶的形成的影响发现,管式炉退火处理的样品给出非常强的室温光致发光,其发光峰的峰位随着硅纳米晶尺寸的增大而红移,且管式炉退火比快速热退火更有利于硅纳米晶的形成。     

PbSe胶质纳米晶温度依赖的光谱特性研究

在研究中,制备了3.8和5.8nm两种尺寸的PbSe胶质纳米晶,并对PbSe胶质纳米晶温度依赖的光学特性进行了研究。实验数据表明:在室温情况下,随着温度和尺寸的变化,PbSe胶质纳米晶的禁带宽度、发光峰值波长、发光强度及全波半宽度等都会发生改变。在纳米晶尺寸是3.8nm时,PbSe胶质纳米晶的禁带宽度随温度升高产生红移;但是当尺寸是5.8nm时,禁带宽度随温度升高产生蓝移。随温度的升高,PbSe胶质纳米晶的发光强度将下降、全波半宽度会增加。     

Fluorescence Enhancement of CdSe Q-Dots with Intense Femtosecond Laser Irradiation

Effects of intense femtosecond (fs) laser irradiation on the optical properties of cadmium selenide (CdSe) nanocrystals are studied. We present the changes in emission and absorption of laser (800 nm, 110 fs, Ti–Sapphire) irradiated CdSe nanocrystals dispersed in dimethylformamide (DMF). It is observed that the absorbance of CdSe nanocrystals capped with trioctylphosphine (TOP) increases with the number of laser pulses. The trap state luminescence intensity of these crystals degrades, whereas the band edge luminescence intensity shows an increase as a function of the fs laser irradiation. We also report strong two photon absorption and reduction in the trap state luminescence intensity after irradiation with the laser pulses.     

Formation and spectroscopic characterization of mono-dispersed CdSe nanocrystals

In this article, mono-dispersed hexagonal structure CdSe nanocrystals with polyhedron shape were prepared by an open solvent thermal reaction. They show a discrete excitonic transition structure in the absorption spectra and the minimal photoluminescence （PL） peak full-width at half-maximum of 19nm. The PL quantum yield is about 60%. Transmission electron micrographs, high-resolution transmission electron micrographs, x-ray powder diffraction patterns, UV-vis absorption spectra and PL spectra were obtained for the as-prepared CdSe nanocrystals. The size of the CdSe nanocrystals can be tuned by changing the reaction temperature or time. Due to the improved synthesis method, a different growth mechanism of the CdSe nanocrystals is discussed.     

氧化锌纳米晶体的光谱分析

采用沉淀法并通过控制前驱体的煅烧温度来制备粒径不同的氧化锌(ZnO)纳米晶体,对粒子的透射电镜照片进行分析,结果表明,制备出的纳米粒子分散性好、形貌一致、粒径分布集中。样品的X射线衍射光谱分析表明,随着前驱体煅烧温度增加,晶体粒径增大、结晶度提高;样品的紫外-可见吸收光谱的峰位随粒径减小而发生蓝移,这一实验结果表明ZnO纳米晶体呈现出较明显的量子限域效应;红外吸收光谱测量结果表明,用沉淀法制备的ZnO纳米晶体的表面会吸附一小部分残余的离子,对红外吸收光谱中的ZnO特征振动峰随粒径减小发生宽化和红移的现象进行了理论分析;光致发光光谱测量结果表明,ZnO纳米晶体在紫外区(360 nm)存在一较弱的发光峰,而在可见区(468 nm)存在一较强的发光峰,与理论计算结果进行比较后,认为锌空位点缺陷是导致ZnO纳米晶体可见区发光的主要原因。     

Water-soluble, cyclodextrin-functionalized semiconductor nanocrystals: Preparation and pH-dependent aggregation and emission properties

Using peramino-functionalized β-cyclodextrin molecules for phase.transfer of hydrophobic CdSe multishell nanocrystals into water, we obtained hydrophilic nanoparticles with high quantum yield (up to 50%). At pH > 9, the aqueous solution of these nanocrystals remained stable for several months. The nanoparticles showed a strong influence of the pH of the aqueous solution on the emission of the nanocrystals: the quantum yield varied reversible from ∼10% at pH=6 to ∼50% at pH=14, an effect which according to particle size characterization by dynamic light-scattering and asymmetric flow field-flow fractionation has mainly been attributed to reversible partial aggregation of the hydrophilic nanocrystals at lower pH-values. Additionally, prolonged irradiation in the presence of oxygen led to a strong enhancement of the photoluminescence intensity of the nanocrystals.     

CdSe/CdS核壳纳米晶微波水热法一步合成与发光光谱分析

采用微波水热法一步合成了核壳结构的CdSe/CdS纳米晶,讨论了巯基丙酸中S^2-的释放过程对纳米晶生长的影响。XRD和Raman光谱结果表明,140℃合成温度下获得了CdSe/CdS核壳结构的纳米晶。FTIR光谱结果表明,巯基丙酸随时间的分解有助于CdS壳层的形成。PL光谱呈现出CdSe纳米晶的带间发射和缺陷发射,随着核壳结构的形成,CdSe纳米晶的表面缺陷被抑制,相关的荧光发射减弱。     

Confirming the lattice contraction in CdSe nanocrystals grown in a glass matrix by Raman scattering

This work gives the evidence of the lattice contraction in CdSe nanocrystals (NCs) grown in a glass matrix. The CdSe NCs were investigated by atomic force microscopy (AFM), optical absorption (OA), and Raman spectroscopy. The average size of CdSe NCs can be estimated by AFM images. Using the OA spectra and the effective‐mass approximation, it was also possible to estimate the average sizes of CdSe NCs, which agree very well with the AFM data. These results showed that the CdSe NCs grow with increasing time of heat treatment. The blue shift of the longitudinal optical (LO) modes and surface optical (SO) phonon modes with an increase in the average radius of the NCs, shown in the Raman spectra, was explained by the lattice contraction in CdSe NCs caused by thermodynamic interactions at the interface with the host glass matrix. Copyright © 2010 John Wiley & Sons, Ltd.     

The temporal evolution of the structure and luminescence properties of CdSe semiconductor quantum dots grown at low temperatures

Mono-dispersed CdSe quantum dots have been prepared by water based route using 2-mercaptoethanol at low temperatures. The structures of the CdSe nanocrystals were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The XRD pattern showed that the prepared CdSe has a cubic phase with zinc blende structure. The temporal evolution of the absorption and photoluminescence spectra was used to follow the reaction process and to characterize the optical properties of the prepared CdSe quantum dots. The results exhibited clear exciton peaks in the absorption spectra. The influence of the temperature and/or time of reaction on the properties of the CdSe nanocrystals were investigated. It is found that the size of CdSe nanoparticles increases, as the reaction temperature and/or time are increased. The results showed that the Stokes shift between photoluminescence emission peak and absorption peaks is increased with the increase of the reaction temperature.