硫酸镉无机层和原位反应生成的吡啶基四氮唑有机配体构筑的两个层-柱状三维无机-有机杂化材料:合成和表征

以硫酸镉、叠氮化钠和4-氰基吡啶或3-氰基吡啶为反应物,在水热条件下,通过原位反应分别得到了2个基于硫酸根离子和5-(4-吡啶基)四氮唑(4-Hptz)或5-(3-吡啶基)四氮唑(3-Hptz)配体的,具有三维层-柱状框架结构的无机-有机杂化材料,即[Cd₂(H₂O)(OH)(SO₄)(4-ptz)]_n(1)和[Cd₂(OH)(SO₄)(3-ptz)]_n(2)。通过元素分析、红外光谱、热重分析以及单晶和粉末X-射线衍射分析对它们的组成和结构进行了表征。在配合物1和2的结构中,每个镉(Ⅱ)离子的配位数均为6,处于扭曲的八面体配位环境中,SO₄^2-和OH-阴离子连接镉(Ⅱ)离子扩展形成碱式硫酸镉的二维无机阳离子层结构[Cd₂(H₂O)(OH)(SO₄)]_nⁿ⁺(1)或[Cd₂(OH)(SO₄)]_nⁿ⁺(2),相邻的二维无机阳离子层间再通过4-ptz^-(1)或3-ptz^-(2)进一步柱连接,形成三维层-柱状结构的无机-有机杂化框架结构。室温下的固体荧光实验表明,在350nm的光激发下,配合物1和2分别在481和489nm处出现强烈的荧光发射。     

无定形TiO2可见光敏化降解染料污染物

采用一步水解法制备了无定形TiO2(Am-TiO2),并运用X射线衍射、X射线光电子能谱、N2吸附-脱附和紫外-可见漫反射光谱等手段对其进行了表征.结果表明,Am-TiO2具有大的比表面积(216m2/g)和丰富的表面羟基/化学吸附的水.与晶态TiO2相比,Am-TiO2的吸收带边明显蓝移(411nm→378nm),禁...     

乙酰胺-氯化锌新型离子液体的合成及物化性质

合成了CH3CONH2-ZnCl2体系离子液体;利用红外光谱仪分析了CH3CONH2-ZnCl2离子液体的化学特征,采用步冷曲线法绘制了CH3CONH2-ZnCl2二元体系熔点图,测定了其物化性质.结果表明,CH3CONH2-ZnCl2二元体系的最低熔点为8℃;当CH3CONH2与ZnCl2的摩尔比为3:1时,Zn2+...     

一个由咪唑衍生物构筑的二重穿插的锌配位聚合物的合成、结构及荧光性质

以ZnCl2、H3IDC(咪唑-4,5-二羧酸)和bix(1,4-双(咪唑基-1-甲基)-苯)为原料,在水热条件下得到了1个新的二重穿插的三维层-柱状金属-有机框架结构的配位聚合物{[Zn3(IDC)(bix)1.5Cl3].0.25H2O}n(1),并通过元素分析、红外光谱、热重分析以及单晶X-射线结构分析对其组成和结构进行了表征。单晶X-射线结构分析表明,配合物1的晶体属于单斜晶系,P21/c空间群,a=1.158 44(17)nm,b=1.088 75(16)nm,c=2.391 7(3)nm,β=96.835(2)°,V=2.995 1(8)nm3,Z=4,Dc=1.813 g.cm-3,F(000)=1 638,对于4 772个可观测点(I>2σ(I)),最终残差因子R1=0.037 9,wR2=0.089 6。在配合物1中,每个IDC3-分别桥联4个锌(Ⅱ)离子形成一维锯齿形链状结构,一维链通过cis-μ2-bix的2个氮原子连接形成二维网状结构,相邻的二维层之间再通过trans-μ2-bix的2个氮原子进一步连接形成了二重穿插的三维层-柱状金属-有机框架结构。固体室温荧光测试结果表明,配合物1在波长为400 nm的光激发下于468 nm处出现强烈的荧光发射。     

内蒙古段黄河水系放射性水平调查研究

给出了内蒙古段黄河水平中总α，总β，＾９０Ｓｒ，＾１３７Ｃｓ，＾４０Ｋ，＾３Ｈ，＾２１０Ｐｂ，＾２１０Ｐｏ，＾２３８Ｕ，＾２３２Ｔｈ、＾２２６Ｒａ放射性水平，结果基本为正常水平，找出了污染源，为内蒙古段黄河水中放射性监督监测建立了全面的背景材料。     

两个4-连接配位网络的锌(Ⅱ)配位聚合物的合成、结构和荧光性质

以5-氨基四氮唑(HATz),异烟酸(HPyc)和ZnSO4·7H2O或Zn(NO3)2·6H2O为反应物,在DMF溶剂热条件下分别得到了2个锌(Ⅱ)配位聚合物{[(CH3)2NH2]·[Zn(ATz)(SO4)]}n(1)和{[Zn(ATz)(Pyc)]·0.5DMF}n(2),并对它们的组成和结构进行了表征。配合物1是由4-连接(4,4)网络拓扑的[Zn(ATz)(SO4)]nn-二维阴离子层和[(CH3)2NH2]+阳离子间通过氢键作用形成的二维波浪层结构。配合物2则是1个二重穿插的4-连接金刚烷拓扑的三维微孔金属-有机框架结构,客体DMF分子填充在孔道内。室温下的固体荧光实验表明,在350 nm的光激发下,配合物1和2分别在为445 nm和458 nm处出现强烈的荧光发射。     

Crystal structure and ionic conductivity of Mg-doped apatite-type lanthanum silicates La10Si6-x Mgx O27-x（x=0–0.4）

Lanthanum silicates La10Si6-xMgxO27-x(x = 0–0.4) were prepared by solid state synthesis to investigate the effect of Mg doping on crystal structure and ionic conductivity. Rietveld analysis of the powder XRD patterns reveals that Mg substitution on Si site results in significant enlargement of channel triangles, favoring oxide-ion conduction. Furthermore,an increase of Mg concentration significantly influences the linear density of interstitial oxygen, which plays an important role in ionic conductivity. The Arrhenius plots of La10Si6-xMgxO27-x(x = 0–0.4) suggest that Mg-doped samples present higher conductivity and lower activation energy than non-doped La10Si6O27, and La10Si5.8Mg0.2O26.8exhibits the highest conductivity with a value of 3.0×10-2S ·cm-1at 700?C. Such conductive behavior agrees well with the refined results.The corresponding mechanism has been discussed in this paper.     

超声速转子叶片非定常引射器流场特性数值模拟

采用计算流体力学方法,结合适当的边界条件,对超声速转子叶片非定常引射器进行了模拟。从结果可以看出:此类引射器内流态复杂,主气流出口斜激波干扰现象明显,叶片设计参数对引射器性能影响很大。叶片尾部的膨胀波有效诱导了被引射气流,在短距离内增强了气流混合,湍流效应对引射器性能的影响较小;叶片可维持自旋转,提升叶片转速可增强引射效率。最后,对引射器内的流动机理进行了探讨。     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

四边形的两个优美性质

文[1]发现了平面四边形涉及"内心"的两个美妙性质,受其启发,本文得到关联"旁心"的两个同样优美的类似结论.