Electronic Structure and Optical Properties of Antimony-Doped SnO_2 from First-Principle Study

A first-principles study has been performed to calculate the electronic and optical properties of the SbxSn1xO system.The simulations are based upon the method of generalized gradient approximations with the Perdew-Burke-Ernzerhof form in the framework of density functional theory.The supercell structure shows a trend from expanding to shrinking with the increasing Sb concentration.The increasing Sb concentration induces the band gap narrowing.Optical transition has shifted to the low energy range with increasing Sb concentration.Other important optical constants such as the dielectric function,reflectivity,refractive index,and electron energy loss function for Sb-doped SnO2 are discussed.The optical absorption edge of SnO2 doped with Sb also shows a redshift.     

Auger图示对锰原子共振结构的影响

使用多体微扰理论(many-body perturbation theory，MBPT)计算了锰原子的3p^63d^54s^2→3p^53d^54s^2nd系列里德堡共振结构。在耦合方程方法中考虑了Auger图式，计算表明，Auger图式有效地抑制了3p→nd系列共振结构的发散。     

从常温常压到超临界乙醇的分子动力学模拟

采用分子动力学方法系统地研究了从常温常压到超临界状态乙醇的热力学性质、结构性质和动力学性质.模拟发现随着温度的升高,体系焓值增大,乙醇分子间的氢键作用减弱,自扩散系数增大;随着压强的增大,乙醇分子间的氢键作用增强,自扩散系数减小;乙醇自扩散系数在液相区随温度变化不明显,在气相区随压强增大很快减小,超临界区乙醇的自扩散系数比液相区大十几倍.温度和压强对乙醇自扩散系数的影响可通过密度来体现.与常温常压相比,超临界条件下的乙醇体系因密度涨落存在分子聚集现象,且在低密度区域更显著;乙醇分子间的氢键作用明显减弱,结     

超高压水的分子动力学模拟

 采用平衡分子动力学（EMD）方法,模拟研究了温度范围为243~348 K、压强范围为0.1~400 MPa条件下水的热力学性质、结构和动力学性质,模拟结果与实验值吻合较好。模拟结果表明,随着压强的增大,水分子间的氢键作用增强,扩散系数减小;随着温度的升高,水分子间的氢键作用减弱,有序程度下降,扩散系数增大。但在过冷水中,扩散系数随压强的增大有增加的趋势。     

钠原子光电离过程中角分布参数β的计算

运用多体微扰理论方法 ,对开壳层钠原子的内壳层电子的光电离过程2p⁶3s→ 2p⁵ 3skl中分波散射截面和角分布参数进行了计算 .在计算中包括了 2s→ 3p的共振结构 .同时利用多体微扰理论的图式 ,对主要的电子关联相互作用进行了分析 ,并对RPA和BO关联的主要贡献项计算达到了无穷级近似 .计算结果与实验吻合较好 .     

钠原子光电离2p→kl(ks,kd)散射截面理论计算

用多体微扰理论研究和计算了钠原子2p→kl(ks,kd)光电离截面,计算结果与实验结果相符合.     

Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings

This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings. The strain distribution calculations are based on the continuum elastic theory. An ideal three-dimensional circular quantum ring model is adopted in this work. The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass Schr?dinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain. The calculated results show the importance of strain and piezoelectric effects, and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings.     

二维光子晶体禁带特性研究

采用平面波展开法对二维光子晶体分别在E和H极化下的带隙进行了计算. 考虑了填充比、晶格结构、介电常数对最大绝对帯隙的影响. 结果表明,不论是正方晶格还是三角晶格,TM模在介质柱型光子晶体中更容易形成带隙;TE模在空气孔型光子晶体中更容易形成带隙. 填充比一定,最大绝对帯隙宽度并非随着介电常数增大总是增大,而是存在一个峰值. 相对介电常数一定,最大绝对帯隙宽度随填充比的变化也存在一个峰值. 不论空气孔型还是介质柱型结构,三角晶格比正方晶格更容易形成帯隙. 关键词： 平面波展开法 TE模 TM模 最大绝对帯隙     

Thermoelectric properties of two-dimensional hexagonal indium–VA

The electrical properties and thermoelectric(TE) properties of monolayer In–VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 W·m~(-1)·K~(-1)(InP), 1.31 W·m~(-1)·K~(-1)(InAs), 0.87 W·m~(-1)·K~(-1)(InSb), and 0.62 W·m~(-1) K~(-1)(InBi) evaluated at room temperature are close to typical thermal conductivity values of good TE materials(κ 2 W·m~(-1)·K~(-1)). The maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K,which makes In–VA potential TE material working at medium-high temperature.