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采用平面波展开法对二维光子晶体分别在E和H极化下的带隙进行了计算. 考虑了填充比、晶格结构、介电常数对最大绝对帯隙的影响. 结果表明,不论是正方晶格还是三角晶格,TM模在介质柱型光子晶体中更容易形成带隙;TE模在空气孔型光子晶体中更容易形成带隙. 填充比一定,最大绝对帯隙宽度并非随着介电常数增大总是增大,而是存在一个峰值. 相对介电常数一定,最大绝对帯隙宽度随填充比的变化也存在一个峰值. 不论空气孔型还是介质柱型结构,三角晶格比正方晶格更容易形成帯隙.
关键词:
平面波展开法
TE模
TM模
最大绝对帯隙 相似文献
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交换环上全矩阵模的保幂等自同态 总被引:2,自引:0,他引:2
本文对交换环 R 上全矩阵模 M_n(R)的保幂等自同态进行了刻划,推广了[1]与[2]的工作. 相似文献
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Electronic structure and optical properties of the zinc-blende InxGa1 - xNyAs1-y system are calculated from the first-principles. Some relative simulations are performed using CA-PZ form of local density approximation in the framework of density functional theory. The supercell of intrinsic GaAs is calculated and optimized by using different methods, and the LDA-CA-PZ gives the most stable structure. The band gap of InxGa1 - xAs tends to decrease with the increasing In concentration. For the case of In0.0625Ga0.9375NyAs1 -y, the band gap will show slight difference when N concentration is larger than 18.75%. The optical transition of In dopant in GaAs exhibits a red shift, while it is a blue shift for the N dopant in InGaAs. Besides, dielectric function, reflectivity, refractive index and loss function in different doping model of InxGa1 - xNyAs1 - y are also discussed. 相似文献
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