| Thermoelectric properties of two-dimensional hexagonal indium–VA |
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| 引用本文： | 毕京云,韩利红,王倩,伍力源,屈贺如歌,芦鹏飞.Thermoelectric properties of two-dimensional hexagonal indium–VA[J].中国物理 B,2018(2). |
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| 作者姓名： | 毕京云 韩利红 王倩 伍力源 屈贺如歌 芦鹏飞 |
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| 摘 要： | The electrical properties and thermoelectric(TE) properties of monolayer In–VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 W·m~(-1)·K~(-1)(InP), 1.31 W·m~(-1)·K~(-1)(InAs), 0.87 W·m~(-1)·K~(-1)(InSb), and 0.62 W·m~(-1) K~(-1)(InBi) evaluated at room temperature are close to typical thermal conductivity values of good TE materials(κ 2 W·m~(-1)·K~(-1)). The maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K,which makes In–VA potential TE material working at medium-high temperature.
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