Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings |
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| Authors: | Liu Yu-Min Yu Zhong-Yuan Jia Bo-Yong Xu Zi-Huan Yao Wen-Jie Chen Zhi-Hui Lu Peng-Fei and Han Li-Hong |
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| Affiliation: | Institute of Optical Communication and Optoelectronics, Beijing
100876, China;Key Laboratory of Information Photonics and
Optical Communications (Beijing University of Posts and
Telecommunications), Ministry of Education, Beijing 100876,
China |
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| Abstract: | This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings.The strain distribution calculations are based on the continuum elastic theory.An ideal three-dimensional circular quantum ring model is adopted in this work.The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass Schro¨dinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain.The calculated results show the importance of strain and piezoelectric effects,and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings. |
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| Keywords: | quantum ring strain distribution electronic
structure |
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